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1.
2.
On the basis of an arbitrary (V, A) structure of the neutral weak ¯ee and LL currents (L=, M0) a study is made of the processes of production in colliding electron-positron beams of pairs of heavy leptons with subsequent decays in accordance with the schemes e+evµv) + +( anything) and e+eM0e+ve) + M0( anything). The energy spectrum and asymmetry of the distribution of the produced muons are investigated.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 2, pp. 66–70, February, 1981.  相似文献   

3.
Differential and total cross sections are found for the formation of an electron-positron pair during the annihilation of longitudinally polarized protons and antiprotons (pp e+ e) and for the inverse reaction (e+ e- pp) in the single-photon approximation, account is taken of the anapole and electric dipole moments of the proton, which violate C, P, and T parity. Possible ways to determine the square moduli of the form factors for the anapole [G1(q2)] and electric dipole [G2(q2)] moments and to determine the relative phase of the form factors Fe(q2) and G2(q2) [Fm(q2) and G1(q2)] are pointed out. Estimates are found for ¦(G1q22 and ¦G2(q2) ¦2 with q2 = –6.8 (GeV/c)2.Translated from Izvestiya VUZ. Fizika, No. 8, pp. 59–65, August, 1970.The authors thank Professor A. A. Sokolov, Professor I. M. Ternov, and Yu. M. Loskutov for discussions of these results.  相似文献   

4.
By methods of spectral diagnostics, the temperature of neutral gas and the electron temperature and density have been determined in the channel of a unipolar high-frequency discharge excited at very high pressures. In nitrogen the h.f. discharge was excited at pressures of 1–5 atm, in argon at pressures of 1–12 atm. In the discharge excited in argon, the electron temperature does not change with increasing pressure and isT e =(6–7)×103 °K; the electron density increases with increasing pressure. It can be demonstrated that the electron velocity distribution is given by a Maxwellian distribution function although the plasma of a unipolar high-frequency discharge is non-isothermal (T e T n 5×103 °K).In conclusion, the author thanks Prof. Dr. V. Truneek for stimulating remarks and his kind interest in this work.  相似文献   

5.
A new approach to constructing the various generalizations of the one-dimensional supersymmetric quantum mechanics is proposed, including the parasupersymmetric quantum mechanics constructed by Rubakov and Spiridonov as the special case. In particular, we derive the generalized superalgebra, which possesses the features both of the familiar superalgebra and of the parasuperalgebra. Namely, the generalized supercharges Qi ± and the Hamiltonian H forms the generalized superalgebra, where Qi ±2=0 (as for ordinary superalgebra), but the triple products of generalized supercharges obey the relations Q1 +Qj Qj +=Qi +H (i, j=1, 2) and Qi +Qi Qj +=(1/4)kQi +, Qi +Qi Qj +=(1/4)kQi +(i, j=1, 2; ij) (analogous to the parasuperalgebra). Furthermore, the generalized supercharges are conserved, i.e. [H, Qi ±]=0.Presented at the International Workshop on Squeezed and Correlated States, Moscow, December 3–7, 1990.  相似文献   

6.
Within nonrelativistic quantum mechanics the Wick-ordering method, called the oscillator representation, is suggested for calculating the energy spectrum for a wide class of potentials allowing the existence of a bound state. As test cases, anharmonic (V(r)=r 2) and screened Coulomb potentials are considered. In particular, the method is applied to three-body Coulomb systems to obtain the dependence of the bound-state energy on the masses and charges of the particles. The calculations of the bound-state energies for the moleculesH =(pee),H 2 + =(ppe), (e ee+) and (pp), (dd), (dt) prove the accuracy of the zeroth approximation to be better than one per cent. For the three-body Coulomb system with charges +, –, – and arbitrary masses the region of stability is determined. For the systems (pe C+), (A +ee+), and (pB e) the critical masses are calculated to beM c=1.945me,M A=4.350me andM B=1.575me. It turns out that the system (pe e+) is unstable.  相似文献   

7.
Investigations of the Shubnikov-de Haas oscillation of the transverse magnetoresistance due to the magnitude of the electric field in n-type InSb with 5 · 1015, 3 · 1016 cm–3 concentrations at a 4.2 °K temperature are carried out herein. A method is proposed to determine the electron temperature Te; dependences of Te on the electric and magnetic fields in the sample are obtained for a transversely oriented magnetic field. The relaxation time of the electron energy is estimated.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 2, pp. 96–100, February, 1972.  相似文献   

8.
We compute probabilities for the processes ee+Z+H, and e++eZ+H in a superstrong magnetic field. It is shown that the magnetobremsstrahlung of the Higgs boson with the Z boson in the magnetic field Bs>B0=m2/e=4.41·1013 G may be a relatively probable process, and that the superstrong magnetic field significantly influences the process e++eZ+H, which is possible even in the absence of the field.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 1, pp. 104–108, January, 1991.The author thanks V. Ch. Zhukovskii and A. V. Borisov for discussions on the results of this work.  相似文献   

9.
Diatomic silicon sulfide molecules have been produced in the chemiluminescent reaction of silicon atoms with OCS. Spectra of the resulting flame consist mainly of two new band systems in the region 350–400 and 385–600 nm. These systems have been assigned as b 3Πr-X 1Σ+ and a 3Σ+-X 1Σ+ on the basis of band structure, spin-orbit splitting, molecular constants, and comparison with chemiluminescent spectra of isovalent molecules. Vibrational assignments were made with the help of the isotope effect and vibrational constants were obtained. Rotational structure was observed in some a-X bands and a partial analysis yielded an approximate rotational constant, B 0.247 ± 0.007 cm−1, for the a 3Σ+ state. Franck-Condon factors, calculated for the a-X system, are shown to fit the general trend of the intensity distribution. Irregularities in spin-orbit splitting and in relative intensities of the spin-orbit components of the b 3Π-X 1Σ+ system were observed and an attempt is made to explain them in terms of interactions with neighboring states. Addition of active nitrogen to the flame was shown to greatly increase the intensity of the b-X system relative to the a-X system. Constants (in cm−1) obtained for the new state are: a3σ+: Te=24 582.1 ± 1.3, ωe=503.8±1.0, ωexe=1.86±0.21b3σ+: Te=27 314.5 ± 2.2, ωe=619.4±2.0, ωexe=5.75±0.52b3σ+: Te=27 407.9 ± 1.1, ωe=524.3±1.2, ωexe=3.97±0.28  相似文献   

10.
This work is devoted to the study of the Bohm criterion in the general case of the electron energy distribution function (EEDF). Investigations are performed by means of a Monte Carlo integration method. We resolve the cold fluid equation system describing the ion motion within the sheath, assuming collisionless conditions, singly charged and mono kinetic incoming ions (BOHM model). Results confirm that the limit ion velocity at the sheath edge to assure a monotone electric field with a positive charge over the entire sheath is vi ≥ (kTe/Mi) or εi ≥ 1/3 <εe> in the case of Maxwellian electrons. We show that in the case of a Druyvesteyn electron energy distribution, this limit is larger, it is εi ≥ 0.6 <εe>. The study is also extended to other distributions functions. Because of the large controversy in recent publications, concerning the boundary conditions at the sheath entrance, we discuss the collisionless conditions at the sheath edge according to the plasma parameters. It is shown that in a collisionless sheath, the condition ni(χ) ≥ ne(χ) can be used to determine the limit ion velocity at the sheath edge of the negatively biased collector (Langmuir probe for instance) (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)  相似文献   

11.
The exact solution of the Dirac equation for an electron in the field of a bichromatic plane electromagnetic wave — with components that are monochromatic waves propagating in one direction — is used to calculate the probability of e+e pair production on a nucleus in the field of such a wave. This influence of the nucleus is treated perturbatively as an external Coulomb field. The cases of small and large values of the intensity parameters of the wave components are considered and the passage to the limit of a crossed field is discussed.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 9, pp. 33–40, September, 1978.We are very grateful to V. R. Khalilov for a fruitful discussion of the results.  相似文献   

12.
From the two-photon exchange processes e+e? → e+e?η' (958) → e+e??0γ and e+e? → e+e?A2 (1310) → e+e?π+π?π0 observed using the CELLO detector at PETRA the radiative widths of the η' and A2 have been determined with the results: Γγγ(η') = 5.4 ± 1.0[stat.] ± 0.7[syst.] keV; Γγγ(A2) = 0.59 ± 0.14[stat.] ?0.08+0.31[syst.] keV.  相似文献   

13.
Fe-doped mesoporous titanium dioxide (M-TiO2-Fe) thin films have been prepared on indium tin oxide (ITO) glass substrates by sol–gel and spin coating methods. All films exhibited mesoporous structure with the pore size around 5–9 nm characterized by small angle X-ray diffraction (SAXRD) and further confirmed by high resolution transmission electron microscopy (HRTEM). Raman spectra illustrated that lower Fe-doping contributed to the formation of nanocrystalline of M-TiO2-Fe thin films. X-ray photoelectron spectroscopy (XPS) data indicated that the doped Fe ions exist in forms of Fe3+, which can play a role as e or h+ traps and reduce e/h+ pair recombination rate. Optical properties including refractive indices/n, energy gaps/Eg and Urbach energy width/E0 of the thin films were estimated and investigated by UV/vis transmittance spectra. The presence of Fe content extended the light absorption band and decreased the values of n, implying enhanced light response and performance on dye-sensitized solar cells (DSSC). The optimum Fe content in M-TiO2-Fe thin films is determined as 10 mol%, for its compatibility of well crystalline and well potential electron transfer performance.  相似文献   

14.
Injection of excess carriers into thei region of a forward biasedpin diode diminishes proportionally its resistivity (primary circuit). Resistivity variations in thei region are used to control higher currents and powers in the secondary circuit. This basic idea is developed quantitatively for a simplified symmetrical model of thepin structure in a stationary regime and then generalized for the asymmetrical case. The frequency characteristics of the electronic device are studied. For demonstration of the theoretical results thepin structure in silicon with known parameters is used.Notation 2d [m] length ofi region - D [m2 s–1] ambipolar diffusion constant - e [C] electron charge - E 2 [Vm–1] electric field strength iny direction - i 1 [Am–2] current density inx direction - i 2 [Am–2] current density iny direction - i m [Am–2] current density due to recombination of carriers ini region - i 1ef ,i 2ef [Am–2] effective values of currentsi 1,i 2 - i ns ,i ps [Am–2] saturated current densities from the heavily dopedn, p regions - i intrinsic region - I [A] total current throughp-n junction - I 1 [A] total current in pin diode - I 2 [A] current in secondary circuit - k[J grad–1] Boltzmann's constant - L=(D) [m] ambipolar diffusion length of carriers in middle region - n(x) [m–3] excess electron concentration in middle region - ¯n [m–3] average value of electron concentration in middle region - n i [m–3] intrinsic electron concentration - n A [m–3] acceptor concentration inp region - n D [m–3] donor concentration inn region - p(x) [m–3] excess hole concentration in middle region - q [m2] area of electrodes 3 and 4 - Q [C] charge stored ini region - R [m–3 s–1] recombination rate - s [m] width of diode - t [m] thickness of diode - T [K] absolute temperature - U [V] voltage acrossp-n junction - U 1 [V] voltage acrosspin diode - U 2 [V] voltage across terminals of secondary circuit - U m [V] voltage drop acrossi region - V D [V] voltage drop acrossn — i andp — i junctions at zero load - W 1 [W] power inpin diode circuit - W 2 [W] power in secondary circuit - x [m] distance from center of diode - coefficient in current amplification factor - [rad] phase shift of diode current with respect to applied voltage - [s] life time of excess carriers ini region - [m2 V–1 s–1] carrier mobility ini region in the symmetrical model - n [m2 V–1 s–1] electron mobility ini region - p [m2 V–1 s–1] hole mobility ini region - [–1 m–1] conductivity  相似文献   

15.
We present an alternative approach to describe deuteron production in high energy particle collisions. The phenomenological Lund-model has been used to give the number and momentum distribution of secondary nucleons produced in 300 GeV proton-proton collisions. Deuterons are assumed to be produced in a final state interaction between the nucleons inNN d reactions inside a volume of 1 F3. The results are compared to experimental data.Data became available for antideuteron production in e+e annihilation. * A Lund Monte Carlo calculation for the production of secondary nucleons in e+e collisions exist. The results from a final state interaction were too small by a factor 103. A calculation for a coalescent model which uses the overlap of the proton-neutron momentum distribution with a distribution from a Hulthen wave function is in good agreement with the data. The coalescent model works well in this case. It is because the relative momentum of the coalescent nucleons produced for 10 GeV cm energy in e+e collisions is very much smaller than the relative momentum of the nucleons produced in 300 GeV fixed target energy ofpp collisions.  相似文献   

16.
We have studied the reactione + e e + e using data taken by the CELLO detector at 35 GeV centre of mass energy with an integrated luminosity of 86 pb–1. The differential cross section is found to agree with the Standard Model and is used to set limits on possible deviations from the pointlike structure of the electron. The lower limits obtained for the compositeness scale range from 0.8 to 6.0 TeV (95% C.L.), depending on the structure of the current.  相似文献   

17.
The paper considers the formation of gluon and quark jets in the inelastic scattering of electrons by nucleons with large momentum transfers. It is assumed that these jets are created by the processes e+qe+q+g and e+ g e+q+q, where q is a quark and g is a gluon. The angular distributions of gluon and quark jets are calculated in the lowest order in the quark-gluon coupling constant. It is shown that after integration the processes e+qe+q+g and e+g e+q+¯q lead to violation of the scaling invariance of deep-inelastic scattering of electrons by nucleons.Translated from Izvestiya Vysshkikh Uchebnykh Zavedenii, Fizika, No. 9, pp. 68–73, September, 1981.  相似文献   

18.
The total cross section for hadrons was measured as a function of the invariant massW of the system (1.25 to 4.25 GeV) at thee + e -collider VEPP-4 with the detector MD-1. For the first time the data were obtained by detecting both scattered leptons with almost zero emission angles. The mean squared four momentum transfer q 2 is –0.005 GeV2, the rmsW resolution is 100–250 MeV. The data on the mean charged multiplicity n C are well described by the function n C =(1.62 ±0.37)+(1.83±0.45)·ln(W(GeV)). TheW dependence of the total cross section is consistent with the theoretical prediction (nb)=240+270/W(GeV).  相似文献   

19.
The properties of the radial excitations of the , ω and mesons are discussed. In particular it is proposed to identify the recently observed states at √s 1.5, 1.82 and 2.13 GeV in e+e annihilation with the D3D1(λλ), ″ and ′″ mesons respectively. The ′ meson is suggested to lie in the vicinity of 1.5 GeV and strongly coupled to the D. The ″(1.6) width is also suggested to be smaller than previously reported.  相似文献   

20.
The charge state dependence of positron lifetime and trapping at divacancy (V2) in Si doped with phosphorus or boron has been studied after 15 McV electron irradiation up to a fluence of 8.0×1017 e/cm2. The positron trapping cross sections for V 2 2– , V 2 and V 2 0 at 300 K were about 6×10–14, 3×10–14 and 0.1–3×10–14 cm2, respectively. For V 2 + , however, no positron trapping was observed. The marked difference in the cross sections comes from Coulomb interaction between the positron and the charged divacancy. The trapping rates for V 2 0 and V 2 2– have been found to increase with decreasing temperature in the temperature range of 10–300 K. These results are well interpreted by a two-stage trapping model having shallow levels with energy of 9 meV (V 2 0 ) and 21 meV (V 2 2– ). The appearance of a shallow level for V 2 0 can not be explained by a conventional Rydberg state model. The lifetime (290–300 ps) in V 2 0 is nearly constant in the temperature range from 10 to 300 K, while that in V 2 2– increases from 260 ps at 10 K to 320 ps at 300 K. The lifetime (260 ps) in V 2 2– is shorter than that in V 2 0 at low temperature, which is due to the excess electron density in V 2 2– . At high temperature, however, the longer lifetime of V 2 2– than that of V 2 0 is attributed to lattice relaxation around V 2 2– .  相似文献   

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