W 波段检波器的研究与设计

本文介绍了一种中心频率为94GHz,带宽为4GHz,应用检波二极管制作的微带检波器的设计方法。该检波器输入端口为WRl0标准矩形波导,输出为SMA接头,通过对脊鳍线渐变的方式实现波导到微带的过渡。设计出的检波器为负向检波,当输入功率为-20dBm时,在中心频率处测的电压灵敏度大于320mV/mW。     

毫米波检波器小信号检波特性分析

检波器是毫米波接收系统最常用的部件。对检波器的检波特性进行全面分析和测试验证,是研究接收机性能指标的一个重要前提。通过严格的理论分析和推导,论述一种毫米波检波电路在小信号下产生的振荡现象原因,并提出改进方法。     

Ka 波段微带检波器设计

介绍了一种中心频率为35 GHz,带宽为±2.5 GHz 的混合集成检波器设计方法及测试结果。该检波器输入端口为标准矩形波导,通过探针到微带的过渡,采用高频电磁场仿真软件和微波电路CAD 软件完成该检波器的设计。测试结果表明,该设计方法实现的检波器具有优良的性能。     

高性能K波段宽频带检波器

介绍了高性能的宽带检波器的CAD设计方法及测试结果。该检波器采用波导E面集成电路形式 ,通过对极鳍线实现波导微带过渡 ,采用高频电磁场仿真软件和微波电路CAD软件完成该检波器的设计。测试结果表明 ,该设计方法实现的检波器具有优良的性能     

基于立方星辐射计直接检波系统的毫米波零偏置肖特基二极管检波器设计

基于立方星辐射计直接检波系统,设计并实现了中心频率分别为89 GHz和150 GHz的两款毫米波零偏置肖特基检波器.检波器设计基于ACST的零偏置肖特基二极管.为了获得稳定、优越的性能以及较好的宽带特性,并易于与前级系统集成,更适于立方星辐射计小型化,在直流接地电路与输出电路处采用扇形线结构,并通过一段可调传输线对其端...     

一种新型毫米波矩形波导-微带过渡结构

介绍了一种新颖的、适用于毫米波频段的矩形波导-微带过渡电路结构。该过渡电路具有插入损耗低、频带宽、重复性好的特性。其矩形波导E面相对于微带电路面,以及电磁信号传输方向的位置与脊波导-微带过渡相同。该过渡电路的微带线与波导的转换部分采用非接触式结构,并设计了可调节元件,从而在有一定加工误差的条件下改善其产品传输特性。利用高频仿真软件CST,在Ka频段进行了优化仿真,并对利用其优化值所设计的一对背靠背的电路实物进行了测试,在32～40 GHz的频率范围内,插入损耗小于2.36 dB,回波损耗大于7.22 dB;在整个Ka频段内,插入损耗小于3.49 dB。     

毫米波波导到微带转换的研究

本文应用谱域法结合留数计算理论计算了Ka,Q和W波段微带到矩形波导转换的输入阻抗。分析中考虑了介质层的影响。其中ka波段的计算结果与文献发表结果相比一致性较好，研究了微带长度和短路面位置对输入阻抗的影响，并且对传换结构尺寸进行了优化，给出了三个波段的最佳结构尺寸。     

Millimeter-wave antennas

With the continually increasing demand for bandwidth, and the development of components for higher and higher frequencies, millimeter-wave systems are finding numerous applications of a commercial nature rather than being limited to military and scientific applications only. Since active device performance deteriorates with increasing frequency, the performance of the antenna becomes critical as we go higher into the millimeter-wave band. This paper presents a review of some of the recent developments in the field of millimeter-wave antennas. Finally, some details of a specific antenna for imaging are given, illustrating the benefits and challenges of fabricating such antennas.     

低相位噪声毫米波平面振荡器研究

设计了一种低相位噪声毫米波平面振荡器电路,采用在振荡器谐振端嵌入缺陷接地结构(DGS)方法来改善振荡器的相位噪声;同时在振荡器混合集成中采用了芯片倒扣技术减小寄生效应.分析并比较了嵌入和未嵌入DGS结构两种振荡器电路的性能.测试结果表明,嵌入DGS结构的振荡器相位噪声比未嵌入的降低了5 dB～7 dB.     

球型毫米波金属桁架天线罩研究

从球形毫米波天线罩的空间分块设计、金属桁架和连接节点设计、透波窗口设计以及安装架设方式等方面进行了详细论述,并通过一直径7 m、工作在20 GHz的金属空间桁架天线罩的设计实例和实验研究,证明文中所用方法行之有效,可推广应用于各种大型天线罩的电性能分析和选形设计。     

主动毫米波成像性别识别算法研究

针对主动毫米波成像安检系统的个人隐私保护问题,提出了一种主动毫米波人体图像性别识别流程,包括图像预处理、人体躯干图像分割、性别特征提取、各特征值权重确定、性别识别图谱形成、基于图形数据库的图像分类识别和算法优化验证。提出了一种基于灰度值提取的局域直方图性别识别特征图谱,给出了不同图像主体直观、量化的性别特征表达。基于该图谱,提出了一种多特征、多权值性别识别方法,性别识别准确率高于80%,可对海量人体图像快速分类与筛选,从而采取针对性隐私保护措施。该算法已应用于毫米波安检产品,其可移植性高,运行速度快,识别率高,在同类安检设备中具有巨大的应用潜力。     

Millimeter-wave integrated circuits

Monolithic millimeter-wave integrated circuits have been designed and fabricated on semi-insulating GaAs substrates using microstrip transmission lines. Circuits using hybrid techniques have also been constructed on quartz and ceramics. This paper shows that microstrip-line integrated circuits are feasible at millimeter-wave frequencies. Circuit functions have been constructed and tested in the 25- to 100-GHz range. The loss in microstrip line on semi-insulating GaAs was found to be less than 0.3 dB/λ. Couplers from waveguide to microstrip have been made with transmission losses less than 0.5 dB. Monolithic integrated detectors showed 5-dB better sensitivity than a 1N53 diode in a philips detector mount. Monolithic diodes delivered 1.5 mW at 28 GHz. The results are encouraging and a fully monolithic integrated receiver is under development.     

Millimeter-wave CMOS design

This paper describes the design and modeling of CMOS transistors, integrated passives, and circuit blocks at millimeter-wave (mm-wave) frequencies. The effects of parasitics on the high-frequency performance of 130-nm CMOS transistors are investigated, and a peak f/sub max/ of 135 GHz has been achieved with optimal device layout. The inductive quality factor (Q/sub L/) is proposed as a more representative metric for transmission lines, and for a standard CMOS back-end process, coplanar waveguide (CPW) lines are determined to possess a higher Q/sub L/ than microstrip lines. Techniques for accurate modeling of active and passive components at mm-wave frequencies are presented. The proposed methodology was used to design two wideband mm-wave CMOS amplifiers operating at 40 GHz and 60 GHz. The 40-GHz amplifier achieves a peak |S/sub 21/| = 19 dB, output P/sub 1dB/ = -0.9 dBm, IIP3 = -7.4 dBm, and consumes 24 mA from a 1.5-V supply. The 60-GHz amplifier achieves a peak |S/sub 21/| = 12 dB, output P/sub 1dB/ = +2.0 dBm, NF = 8.8 dB, and consumes 36 mA from a 1.5-V supply. The amplifiers were fabricated in a standard 130-nm 6-metal layer bulk-CMOS process, demonstrating that complex mm-wave circuits are possible in today's mainstream CMOS technologies.     

Millimeter-wave amplitude-phase modulator

A millimeter-wave amplitude-phase modulator, using Fox's (polarization) principle of phase changing has been developed. Using this modulator, it is possible to perform the following types of phase modulation: binary phase-shift keying (BPSK), quadrature phase-shift keying (QPSK), differential QPSK (DQPSK), π/4-DQPSK with peak phase error 5° (rms error: 2°), and peak amplitude error 2% (rms error: 1%) in the frequency range of 36-37.5 GHz. The achievable switching time is less than 35 ns. A low level of insertion loss (1 dB) is achieved. The modulator is able to switch up to 25 dBm of RF power. This modulator can also be used for changing the amplitude of the output wave from 0 to -6 dB with an accompanying phase modulation less than 3°. The modulator is suitable for use in high-speed millimeter-wave communication systems     

Millimeter-wave diode-grid phase shifters

Monolithic diode grids have been fabricated on 2-cm square gallium-arsenide wafers with 1600 Schottky-barrier varactor diodes. Shorted diodes are detected with a liquid-crystal technique, and the bad diodes are removed with an ultrasonic probe. A small-aperture reflectometer that uses wavefront division interference was developed to measure the reflection coefficient of the grids. A Phase shift of 70° with a 7-dB loss was obtained at 93 GHz when the bias on the diode grid was changed from -3 V to 1 V. A simple transmission-line grid model, together with the measured low-frequency parameters for the diodes, was shown to predict the measured performance over the entire capacitive bias range of the diodes, as well as over the complete reactive tuning range provided by a reflector behind the grid, and over a wide range of frequencies form 33 GHz to 141 GHz. This shows that the transmission-line model and the measured low-frequency diode parameters can be used to design an electronic beam-steering array and to predict its performance. An electronic beam-steering array made of a pair of grids using state-of-the-art diodes with 5-Ω series resistances would have a loss of 1.4 dB at 90 GHz     

Millimeter-wave asymmetric Fabry-Perot modulators

We have designed, fabricated, and characterized GaAs-AlGaAs (λ=864 nm) asymmetric Fabry-Perot modulators with ≈37 GHz modulation frequency response, comparable to the fastest waveguide modulators. The modulation response saturates at high optical powers due to saturation of the excitonic absorption and heating effects, but the frequency response is independent of the incident optical intensity, since it depends only on the RC time constant, and not on the carrier transit time. The device design takes advantage of the fact that the quantum-confined Stark effect is more pronounced at some distance from the absorption edge to achieve a modulator with ⩾20 dB contrast and ≈3 dB insertion loss for ±2 V operating voltage, but only 21 fF capacitance. The DC bias used to move the operating point off the absorption edge has the additional benefits of improving the linearity and chirp of the device, as well as the saturation intensity. Here we present measurements of the modulation and photocurrent responses of the modulators, calculate the RC and transit times for the device, analyze the saturation mechanisms, and discuss the linearity and chirp of the device from the perspective of a high-speed digital optical communications system