采用飞秒光纤激光同步泵浦的自启动锁模钛宝石激光研究

针对常规连续激光泵浦钛宝石激光振荡器不能自启动锁模的缺点,采用倍频飞秒光纤激光同步泵浦,通过调节振荡器腔长与泵浦腔长匹配,实现了飞秒钛宝石激光的自启动锁模。实验中采用3.4 W的倍频掺镱光纤激光同步泵浦钛宝石激光振荡器,获得了平均功率大于130 mW、重复频率75 MHz、光谱宽度大于47 nm、脉冲宽度17 fs的锁模脉冲输出,不仅能够稳定可靠地实现自启动锁模,解决了常规钛宝石激光振荡器锁模启动的困难,而且还具有同步输出1040,800,520 nm三束飞秒激光的特点,为进一步开展飞秒激光相干合成以及光参量放大等研究提供了优势基础。     

飞秒激光制作铌酸锂光波导的研究

针对Z切割铌酸锂晶体在中心波长为800 nm、重复频率为76 MHz的飞秒脉冲激光下,利用放大倍数为40、数值孔径为0.65的会聚透镜聚焦,研究了扫描速度和扫描次数的变化对刻写光波导结构的影响,分析了波导结构变化的原因,并测试了1×2光波导功分器的通光性能.实验结果表明:在采用横向扫描、聚焦深度为350~400 μm、扫描速度为100 μm/s和激光功率为250 mW时,获得较理想的铌酸锂光波导,1×2光波导功分器的输出功率分布基本达到均分.     

飞秒激光刻写铌酸锂光波导的实验研究

研究了飞秒激光加工参量对刻写质量的影响,分析了激光能量吸收的多光子效应,测试了刻写通道的传输特性.实验结果表明,激光刻写的通道具有良好的波导特性：当激光脉冲能量在20 μJ左右,扫描速度在300 μm/s～400 μm/s之间时,刻写通道的传输损耗小于1 dB/cm,低于晶体的传输损耗,其原因是激光诱导锂离子的扩散引起了晶体内部局部折射率的增加.     

掺Er光纤飞秒激光器载波包络位相偏移的探测

本文介绍了基于掺Er光纤飞秒激光器光学频率梳中光学部分的研制. 实验上采用重复频率为230 MHz的掺Er光纤飞秒激光器,通过放大、光谱展宽以及单臂f—2f系统,在优化及分析相关参数影响的基础上,获得了~30 dB信噪比f₀的输出,为光纤光学频率梳的建立奠定了基础. 关键词： 掺Er光纤激光器 光学频率计量 光纤光学频率梳 光谱展宽     

Manufacturing of Nd:Gd3Ga5O12 ridge waveguide lasers by pulsed laser deposition and ultrafast laser micromachining

Laser radiation is used both for the deposition of the laser active thin films and for the micro structuring to define wave guiding structures for the fabrication of waveguide lasers. Thin films of crystalline and amorphous neodymium doped Gd₃Ga₅O₁₂ are grown on single crystal yttrium aluminium garnet by pulsed laser deposition using excimer laser radiation.Manufacturing of the laser active waveguides by micro structuring is done using femtosecond laser ablation of the deposited films. The structural and optical properties of the films and the morphology of the structured waveguides are determined in view of the design and the fabrication of compact and efficient diode pumped waveguide lasers. The resulting waveguides are polished, provided with resonator mirrors, pumped using diode lasers and the waveguide lasers are characterized. The spectroscopic properties of the amorphous waveguide are investigated and an infrared waveguide laser is demonstrated. To our knowledge, there have been no reports by other groups of the successful operation of a structured waveguide laser fabricated by this technique or of a waveguide laser made from amorphous neodymium doped Gd₃Ga₅O₁₂.     

Octave-spanning Ti:sapphire laser with a repetition rate >1 ghz for optical frequency measurements and comparisons

We demonstrate a self-referenced, octave-spanning, mode-locked Ti:sapphire laser with a scalable repetition rate (550 MHz - 1.35 GHz). We use the frequency comb output of the laser, without additional broadening in optical fiber, for simultaneous measurements against atomic optical standards at 534, 578, 563, and 657 nm and to stabilize the laser offset frequency.     

飞秒钛宝石光学频率梳的精密锁定

经相位锁定后的飞秒钛宝石光学频率梳已经广泛用于绝对光频的测量，这是光频标领域一个革命性的突破.在自建的90MHz飞秒钛宝石激光器的基础上首先采用光子晶体光纤将其光谱展宽到一个光倍频程，接着利用锁相环技术分别将重复频率和载波包络频移同时高精度地锁定到一台稳定度为6×10^－14的Cs钟上，进而得到了稳定度相同的飞秒光学频率梳.     

A double-pass optical parametric amplifier seeded by a blue-shifted output of a photonic-crystal fiber

A blue-shifted output of a photonic-crystal fiber, providing a frequency upconversion of femtosecond Ti:sapphire laser pulses, is used to seed a double-pass optical parametric oscillator (OPA). The OPA is based on a BBO crystal, pumped by 65-mW 150-fs second-harmonic pulses of a Ti:sapphire laser. Gain factors in excess of 10³ are demonstrated for such an OPA, yielding tunable light pulses within the range of wavelengths from 420 to 650 nm, a peak power up to 250 kW, and a typical pulse width of about 200 fs at a repetition rate of 100 kHz. PACS 42.81.Gs; 42.81.Qb     

Fabrication of surface relief gratings on transparent dielectric materials by two-beam holographic method using infrared femtosecond laser pulses

Fabrication of surface relief-type gratings in transparent dielectrics, which are hard to machine, has been achieved by a holographic technique using two infrared femtosecond (fs) pulses from a mode-locked Ti:sapphire laser. The present method can be applied for a variety of transparent dielectrics, Al₂O₃ (sapphire), TiO₂, ZrO₂, LiNbO₃, SiC, ZnO, CdF₂, MgO, CaF₂ crystals, and SiO₂ glass. It is found that the grating formation is due primarily to laser ablation processes. Planar surface relief gratings can be fabricated by colliding two fs laser pulses on the surface of substrates which move at a constant speed, synchronized with the laser repetition rate. Received: 1 March 2000 / Published online: 7 June 2000     

Growth and properties of KLu(WO4)2, and novel ytterbium and thulium lasers based on this monoclinic crystalline host

High‐quality crystals of monoclinic KLu(WO₄)₂, shortly KLuW, were grown with sizes sufficient for its characterization and substantial progress was achieved in the field of spectroscopy and laser operation with Yb³⁺‐ and Tm³⁺‐doping. We review the growth methodology for bulk KLuW and epitaxial layers, its structural, thermo‐mechanical, and optical properties, the Yb³⁺ and Tm³⁺ spectroscopy, and present laser results obtained in several operational regimes both with Ti:sapphire and direct diode laser pumping using InGaAs and AlGaAs diodes near 980 and 800 nm, respectively. The slope efficiencies with respect to the absorbed pump power achieved with continuous‐wave (CW) bulk and epitaxial Yb:KLuW lasers under Ti:sapphire laser pumping were ≈ 57 and ≈ 66%, respectively. Output powers as high as 3.28 W were obtained with diode pumping in a simple two‐mirror cavity where the slope efficiency with respect to the incident pump power reached ≈ 78%. Passively Q‐switched laser operation of bulk Yb:KLuW was realized with a Cr:YAG saturable absorber resulting in oscillation at ≈ 1031 nm with a repetition rate of 28 kHz and simultaneous Raman conversion to ≈ 1138 nm with maximum energies of 32.4 and 14.4 μJ, respectively. The corresponding pulse durations were 1.41 and 0.71 ns. Passive mode‐locking by a semiconductor saturable absorber mirror (SESAM) produced bandwidth‐limited pulses with duration of 81 fs (1046 nm, 95 MHz) and 114 fs (1030 nm, 101 MHz) for bulk and epitaxial Yb:KLuW lasers, respectively. Slope efficiency as high as 69% with respect to the absorbed power and an output power of 4 W at 1950 nm were achieved with a diode‐pumped Tm:KLuW laser. The slope efficiency reached with an epitaxial Tm:KLuW laser under Ti:sapphire laser pumping was 64 %. The tunability achieved with bulk and epitaxial Tm:KLuW lasers extended from 1800 to 1987 nm and from 1894 to 2039 nm, respectively.     

Heteroepitaxial growth of oxides on sapphire induced by laser radiation in the solid–liquid interface

2 O₃, Fe₂O₃ and MnO₂ on sapphire from an aqueous solutions of either CrO₃, FeCl₃, or KMnO₄, respectively, under laser irradiation of the interface sapphire/liquid. The interface is exposed through the sapphire substrate to the radiation of a copper vapor laser (wavelength of 510 nm). The etching of sapphire is accompanied by the deposition of oxide films, which are shown to grow epitaxially on the sapphire substrate, while the deposition of the polycrystalline oxide film occurs on a glass substrate under the same experimental conditions. Similarly, the epitaxial growth of cubic Fe₂O₃ and orthorhombic MnO₂ is observed, though their crystallographic structure is different from the hexagonal structure of sapphire. Received: 26 June 1997/Accepted: 7 July 1997     

Direct femtosecond laser writing of waveguides in As2S3 thin films

Single-channel waveguides and Y couplers were fabricated in chalcogenide thin films by use of femtosecond laser pulses from a 25-MHz repetition rate Ti:sapphire laser. Refractive-index differentials (delta n > 10(-2)) were measured through interferometric microscopy and are higher than the typical values reported for oxide glasses. The dependence of the index differential on the peak intensity reveals the nonlinear nature of the photosensitivity in arsenic trisulfide below its bandgap energy, and the refractive-index change is correlated to the photoinduced structural changes inferred by Raman spectroscopy data. A free-electron model to predict the parametric dependence of delta n is proposed.     

Broadband difference frequency mixing between visible and near-infrared pulses for few-cycle pulse generation with stable carrier-envelope phase

Difference frequency generation between broadband visible noncollinear optical parametric amplifier (NOPA) pulses and the fundamental pump laser pulses allows the generation of ultrashort infrared pulses with passively stabilized carrier-envelope phase. A simple prism compressor for the visible NOPA pulses is sufficient to generate few-cycle pulses in the infrared and no additional compression is needed. We theoretically investigate the concept, explain the principles, and demonstrate it for high repetition rate, long pulse durations, and various wavelengths by applying it to a Ti:sapphire and an Yb:KYW-based laser systems. For the latter sub-15 fs phase stable pulses around 1.8 μm with an energy of 100 nJ are obtained at 100 kHz repetition rate.     

Improved stabilization of a 1.3 microm femtosecond optical frequency comb by use of a spectrally tailored continuum from a nonlinear fiber grating

We report significant enhancement (+24 dB) of the optical beat note between a 657 nm cw laser and the second-harmonic generation of the tailored continuum at 1314 nm generated with a femtosecond Cr:forsterite laser and a nonlinear fiber Bragg grating. The same continuum is used to stabilize the carrier-envelope offset frequency of the Cr:forsterite femtosecond laser and permits improved optical stabilization of the frequency comb from 1.0 to 2.2 microm. Using a common optical reference at 657 nm, a relative fractional frequency instability of 2.0 x 10(-15) is achieved between the repetition rates of Cr:forsterite and Ti:sapphire laser systems in 10 s averaging time. The fractional frequency offset between the optically stabilized frequency combs of the Cr:forsterite and Ti:sapphire lasers is +/-(0.024 +/- 6.1) x 10(-17).     

Sub-90 fs pulses from a passively mode-locked Yb:YAl<Subscript>3</Subscript>(BO<Subscript>3</Subscript>)<Subscript>4</Subscript> laser

Passive mode locking of the self-frequency doubling Yb:YAB crystal with a saturable absorber mirror is studied at the fundamental wavelength. This laser has a very low threshold, and pulses as short as 85 and 87 fs are obtained for Ti:sapphire and diode laser pumping, respectively.     

Femtosecond laser patterning of Ta0.1W0.9Ox/ITO thin film stack

Selective laser patterning of thin films in a multilayered structure is an emerging technology for process development and fabrication of optoelectronics and microelectronics devices. In this work, femtosecond laser patterning of electrochromic Ta_0.1W_0.9O_x film coated on ITO glass has been studied to understand the selective removal mechanism and to determine the optimal parameters for patterning process. A 775 nm Ti:sapphire laser with a pulse duration of 150 fs operating at 1 kHz was used to irradiate the thin film stacks with variations in process parameters such as laser fluence, feedrate and numerical aperture of objective lens. The surface morphologies of the laser irradiated regions have been examined using a scanning electron microscopy and an optical surface profiler. Morphological analysis indicates that the mechanism responsible for the removal of Ta_0.1W_0.9O_x thin films from the ITO glass is a combination of blistering and explosive fracture induced by abrupt thermal expansion. Although the pattern quality is divided into partial removal, complete removal, and ITO film damage, the ITO film surface is slightly melted even at the complete removal condition. Optimal process window, which results in complete removal of Ta_0.1W_0.9O_x thin film without ablation damage in the ITO layer, have been established. From this study, it is found that focusing lens with longer focal length is preferable for damage-free pattern generation and shorter machining time.     

Low cost fabrication of SiO2 optical waveguides by laser direct writing on Ti-doped Sol-Gel films

A commercial direct laser writing (DLW) system operating at 1070 nm was used to fabricate SiO₂ optical waveguides on silicon wafers. A Ti-doped SiO₂ Sol-Gel film was deposited on the SiO₂/Si substrate by the dip-coating technique, based on which SiO₂ optical waveguides were patterned by DLW using a Ytterbium fiber laser and followed by chemical etching. The effects of laser parameters and the preheated temperature of Sol-Gel films on the dimensions of optical waveguides were studied systematically. The differences of etching rate between laser irradiated and non-irradiated areas in Sol-Gel films preheated at various temperatures are characterized by measuring the thickness of the films. Results demonstrate that the available laser power density range for laser densification and the width of the patterned optical waveguides are influenced strongly by the preheated temperature of the Sol-Gel films. The width of the optimized optical waveguide in this work is 25 μm. The minimum propagation loss of the fabricated optical waveguides is 1.7 dB cm⁻¹ at the wavelength of 1550 nm.     

High-power intracavity frequency doubling of a Ti:sapphire femtosecond oscillator

We demonstrate intracavity frequency doubling of a standard femtosecond Ti:sapphire oscillator. The cavity is extended with a pair of focusing mirrors and a 0.5-mm-thick BBO crystal. We achieve a repetition rate of 50 MHz and simultaneously generate 22 mW of 55-fs pulses at 810 nm and 200 mW of 73-fs pulses at 405 nm, which corresponds to 4 nJ per pulse. We create a total of 330-mW, 405-nm light when pumping the Ti:sapphire crystal with 5.7 W from an Ar-ion laser, corresponding to a conversion efficiency of 5.7%. No saturation is found, which implies that higher outputs can be achieved with higher pump rates. Preliminary results from the use of blue pulses as pump in an optical parametric amplifier seeded by pulses from a photonic crystal fiber are presented. Received: 27 January 2003 / Revised version: 27 March 2003 / Published online: 12 May 2003 RID="*" ID="*"Corresponding author. Fax: +45-861/96199, E-mail: tva@chem.au.dk     

Stimulated Raman hyperspectral imaging based on spectral filtering of broadband fiber laser pulses

We demonstrate a technique of hyperspectral imaging in stimulated Raman scattering (SRS) microscopy using a tunable optical filter, whose transmission wavelength can be varied quickly by a galvanometer mirror. Experimentally, broadband Yb fiber laser pulses are synchronized with picosecond Ti:sapphire pulses, and then spectrally filtered out by the filter. After amplification by fiber amplifiers, we obtain narrowband pulses with a spectral width of <3.3 cm(-1) and a wavelength tunability of >225 cm(-1). By using these pulses, we accomplish SRS imaging of polymer beads with spectral information.     

Design and demonstration of a high-energy booster amplifier for a high-repetition rate petawatt class laser system

We have successfully developed a high-energy, high-repetition rate Ti:sapphire laser system that delivers 33 J before compression at 0.1 Hz. The final booster amplifier is based on a 100 mm diameter Ti:sapphire crystal pumped with 72 J of energy in six beams delivered by three frequency-doubled high-repetition rate Nd:glass lasers. This system is, to the best of our knowledge, the first demonstrated petawatt class laser system running at a high repetition rate.