Surface reconstruction on stishovite SiO2,HfO2 and rutile TiO2 （001）

This paper systematically investigates the surface reconstruction processes and patterns on stishovite SiO 2,HfO 2 and rutile TiO 2 (001) by using classical molecular dynamics.It is found that these three surfaces relax instead of reconstruction at 0 K,and have little possibility to reconstruct below 40 K.Above 40 K,surface reconstructions take place as collective atomic motion which can be speeded by higher temperature or compressed strain.Several reconstruction patterns with approximate surface energies are found,and electrostatic potentials on them are also provided in comparison with possible microscopic results.     

Diffusion activation energy versus the favourable energy in two-order-parameter model:A molecular dynamics study of liquid Al

In the present work, we find that both diffusion activation energy E_a(D) and E_a(S^ex) increase linearly with pressure and have the same slope (0.022±0.001 eV/GPa) for liquid Al. The temperature and pressure dependence of excess entropy is well fitted by the expression -S^ex(T,P)/k_B=a(P)+b(P)T+c(P)exp(E_f/k_BT), which together with the small ratio of E_f/k_BT leads to the relationship of excess entropy to temperature and pressure, i.e. S^ex≈-cE_f/T, where c is about 12 and E_f (=Δ E-PΔV) is the favourable energy. Therefore, there exists a simple relation between E_a(S^ex) and E_f, i.e. E_a(S^ex)≈cE_f.     

The characteristics of O＋HD （v = 0, j = 0） reaction dynamics

The analytical potential energy function of HDO is constructed at first using the many-body expansion method.The reaction dynamics of O+HD(v = 0,j = 0) in five product channels are all studied by quasi-classical trajectory(QCT) method.The results show that the long-lived complex compound HDO is the dominant product at low collision energy.With increasing collision energy,O+HD → OH+D and O+HD → OD+H exchange reactions will occur with remarkable characteristics,such as near threshold energies,different reaction probabilities,and different reaction cross sections,implying the isotopic effect between H and D.With further increasing collision energy(e.g.,up to 502.08 kJ/mol),O+HD → O+H+D will occur and induce the complete dissociation into single O,H,and D atoms.     

Effect of electrolyte concentration on DNA A—B conformational transition:An unrestrained molecular dynamics simulation study

<正>The DNA conformational transition depends on both the DNA sequences and environment such as solvent as well as electrolyte in the solution.This paper uses the AMBER8 package to investigate the electrolyte concentration influence on the dynamics of the A→B conformational transition of DNA duplex d(CGCGAATTCGCG)_2.The results from the restrained molecular dynamics(MD) simulations indicate that the total energies of the systems for A-DNA are always higher than those for B-DNA,and that the A→B conformational transition in aqueous NaCl solution is a downhill process.The results from the unrestrained MD simulations,as judged by the average distance between the C5' atoms(average helical rise per ten base pair),show that the concentrated NaCl solution slows down the A→B conformational transition.This observation can be well understood by analyses of the difference between the counterion distributions around A-DNA and B-DNA.     

Effects of high temperature rapid thermal annealing on Ge films grown on Si（001） substrate

Tensile strain,crystal quality,and surface morphology of 500 nm thick Ge films were improved after rapid thermal annealing at 900 C for a short period(20 s).The films were grown on Si(001)substrates by ultra-high vacuum chemical vapor deposition.These improvements are attributed to relaxation and defect annihilation in the Ge films.However,after prolonged(20 s)rapid thermal annealing,tensile strain and crystal quality degenerated.This phenomenon results from intensive Si–Ge mixing at high temperature.     

Cluster size and substrate temperature affecting thin film formation during copper cluster deposition on a Si （001） surface

The soft deposition of Cu clusters on a Si(001) surface was studied by molecular dynamics simulations.The embedded atom method,the Stillinger-Weber and the Lennar-Jones potentials were used to describe the interactions between the cluster atoms,between the substrate atoms,and between the cluster and the substrate atoms,respectively.The Cu13,Cu55,and Cu147 clusters were investigated at different substrate temperatures.We found that the substrate temperature had a significant effect on the Cu147 cluster.For smaller Cu13 and Cu55 clusters,the substrate temperature in the range of study appeared to have little effect on the mean center-of-mass height.The clusters showed better degrees of epitaxy at 800 K.With the same substrate temperature,the Cu55 cluster demonstrated the highest degree of epitaxy,followed by Cu147 and then Cu13 clusters.In addition,the Cu55 cluster showed the lowest mean center-of-mass height.These results suggested that the Cu55 cluster is a better choice for the thin-film formation among the clusters considered.Our studies may provide insight into the formation of desired Cu thin films on a Si substrate.     

Adsorptions and diffusions of carbon atoms on the surface and in the subsurface of Co （200）： A first-principles density-functional study

First-principles calculations based on density functional theory are used to investigate the adsorptions and diffusions of carbon atoms on the surface and in the subsurface of Co(200). The preferred site for the carbon atom on the surface is the hollow site, and the preferred site in the subsurface is the octahedral site. There is charge transfer from the surface to the adsorbed carbon atom, and for the most favorable adsorbed structure the charge transfer is largest. Moreover, the energy barriers for the diffusions of carbon atoms on the surface and from the surface into the subsurface and then back to the surface are calculated in detail. The results indicate that the energy barrier for the diffusion of carbon atoms on the surface is comparable to that from the subsurface to the surface. The results imply that both the direct surface nucleation and the surface segregation from Co bulk can be observed in the chemical vapor deposition growth of graphene on Co(200)substrate, which can gain a new insight into the growth mechanism of graphene.     

A density-functional theory investigation on desorption of O2 on Sn（111） and its comparison with initial oxidation on the X（111） （X=Si,Ge, Sn,Pb） surfaces

<正>The first-principles calculations are performed to investigate the adsorption of O₂ molecules on an Sn（111） 2×2 surface.The chemisorbed adsorption precursor states for O₂ are identified to be along the parallel and vertical channels, and the surface reconstructions of Sn（lll） induced by oxygen adsorption are studied.Based on this,the adsorption behaviours of O₂ on X（111）（X=Si,Ge,Sn,Pb） surfaces are analysed,and the most stable adsorption channels of O₂ on X（111）（X=Si,Ge,Sn,Pb） are identified.The surface reconstructions and electron distributions along the most stable adsorption channels are discussed and compared.The results show that the O₂ adsorption ability declines gradually and the amount of charge transferred decreases with the enhancement of metallicity.     

Step instability of the In0.2Ga0.8As （001） surface during annealing

Anisotropic evolution of the step edges on the compressive-strained In0.2Ga0.8 As/GaAs(001) surface has been investigated by scanning tunneling microscopy (STM). The experiments suggest that step edges are indeed sinuous and protrude somewhere a little way along the [110] direction, which is different from the classical waviness predicted by the theoretical model. We consider that the monatomic step edges undergo a morphological instability induced by the anisotropic diffusion of adatoms on the terrace during annealing, and we improve a kinetic model of step edge based on the classical Burton–Cabrera–Frank (BCF) model in order to determine the normal velocity of step enlargement. The results show that the normal velocity is proportional to the arc length of the peninsula, which is consistent with the first result of our kinetic model. Additionally, a significant phenomenon is an excess elongation along the [110] direction at the top of the peninsula with a higher aspect ratio, which is attributed to the restriction of diffusion lengths.     

Effect of reagent vibrational excitation and isotope substitution on the stereo-dynamics of the Ba+HF→BaF+H reaction

Based on an extended London-Eyring-Polanyi-Sato (LEPS) potential energy surface (PES), the Ba + HF reaction has been studied by the quasi-classical trajectory (QCT) method. The reaction integral cross section as a function of collision energy for the Ba + HF → BaF + H reaction is presented and the influence of isotope substitution on the differential cross sections (DCSs) and alignments of the product's rotational angular momentum have also been studied. The results suggest that the integral cross sections increase with increasing collision energy, and the vibrational excitation of the reagent has great influence on the DCS. In addition, the product's rotational polarization is very strong as a result of heavy-heavy-light (HHL) mass combination, and the distinct effect of isotope substitution on the stereodynamics is also revealed.     

空位在金刚石近(001)表面扩散的分子动力学模拟

用分子动力学方法模拟了空位在金刚石近(001)表面的扩散过程,研究了温度对空位扩散的影响.结果表明,当温度为1000K左右时,位于近表面第二层上的空位开始向表面运动;当温度在1400—2000K时,空位完全扩散到表面.这与实验结果和其他计算结果符合得很好.同时发现,温度为1400—1800K时,空位的扩散经历了两次迁移运动,其分别对应了均方位移图中的两个极大值.在不施加任何约束的条件下得到了空位的动态扩散路径,空位在金刚石近(001)表面的扩散势垒约为042eV.并探讨了一定温度下空位数目增多及其不同排列 关键词： 金刚石 空位 扩散 分子动力学     

Molecular dynamics simulation of nanoscale surface diffusion of heterogeneous adatoms clusters

Molecular dynamics simulation employing the embedded atom method potential is utilized to investigate nanoscale surface diffusion mechanisms of binary heterogeneous adatoms clusters at 300 K, 500 K, and 700 K. Surface diffusion of heterogeneous adatoms clusters can be vital for the binary island growth on the surface and can be useful for the formation of alloy-based thin film surface through atomic exchange process. The results of the diffusion process show that at 300 K, the diffusion of small adatoms clusters shows hopping, sliding, and shear motion; whereas for large adatoms clusters(hexamer and above), the diffusion is negligible. At 500 K, small adatoms clusters, i.e., dimer, show almost all possible diffusion mechanisms including the atomic exchange process; however no such exchange is observed for adatoms clusters greater than dimer. At 700 K, the exchange mechanism dominates for all types of clusters, where Zr adatoms show maximum tendency and Ag adatoms show minimum or no tendency toward the exchange process. Separation and recombination of one or more adatoms are also observed at 500 K and 700 K. The Ag adatoms also occupy pop-up positions over the adatoms clusters for short intervals. At 700 K, the vacancies are also generated in the vicinity of the adatoms cluster,vacancy formation, filling, and shifting can be observed from the results.     

异质原子在Cu（001）表面扩散的分子动力学模拟

采用分子动力学方法模拟单个增原子Ag,Pd和Cu在Cu（001）表面上的扩散过程.通过对自扩散和异质扩散过程中扩散机制的观察,统计三种不同的增原子在不同温度下的扩散频率,拟合给出扩散势垒和扩散频率的指前因子,并与扩散势垒的静力学计算结果进行比较.结果表明：在800 K以下时,三种增原子均以简单跳跃机制为主扩散,与衬底不互溶的Ag增原子的跳跃频率最大,与衬底互溶的Pd增原子的跳跃频率最小.同质增原子与异质增原子的扩散频率和温度的关系均较好地符合Arrhenius公式,由Arrhenius公式拟合给出的三种不同增原子的扩散势垒与表面结构和增原子表面结合能有关.Pd和Cu增原子从跳跃机制为主向交换机制为主的转换温度分别在825和937 K左右. 关键词： 表面扩散 分子动力学模拟     

Cu(111)三维表面岛对表面原子扩散影响的分子动力学研究

采用嵌入原子方法的原子间相互作用势，利用分子动力学方法计算了同质外延生长中不同层数的三维Cu(111)表面岛上表面原子扩散激活能，分析了三维表面岛的层数对表面原子交换扩散和跳跃扩散势垒的影响. 研究结果表明，二维Enrilich-Schwoebel(ES)势垒小于三维ES势垒，且三维ES势垒不随表面岛层数的增加而显著变化. 对于侧向表面为(100)的表面岛，表面原子沿〈011〉方向上的扩散行为，随表面岛层数增加而逐渐变化；在表面岛层数达到3层时，扩散路径上的势垒变化趋于稳定，表面原子扩散以下坡扩散为主. 对于侧面取向为(111)的表面岛，当表面岛层数大于3层后，开始呈现上坡扩散的可能. 关键词： 表面原子 扩散 分子动力学模拟     

分子动力学模拟Gd原子在Cu(110)表面的扩散过程

为了分析Gd吸附原子在Cu(110)表面的扩散机理，用分子动力学对该扩散过程进行模拟.模拟 结果表明在［1 1 0］方向Gd原子通过跳跃机理扩散，而且多步跳跃频率很高.而在［0 0 1］方向则通过交换机理扩散.吸附原子在［1 1 0］方向的扩散能力要比［0 0 1］ 方向强.通过对扩散频率的拟合，发现两种扩散机理都符合Arrhenius公式，从而确定了跳跃 机理的扩散势垒为0.097eV，交换机理的扩散势垒为0.33eV.另外还用能量弛豫的方法确定了 跳跃机理的扩散势垒. 关键词： 分子动力学 表面扩散 跳跃机理 交换机理 扩散势垒     

不同温度下Si(001)表面各种亚稳态结构的分子动力学模拟

采用Stillinger-Weber势对不同温度下解理Si(001)表面的原子几何结构进行等温分子动力 学模拟.模拟结果表明Si(001)表面除主要的p(2×1)结构之外，较低温度下还会有双悬挂键 的单原子结构存在；较高温度下表面还会存在c(2×2)和三聚体等亚稳态结构；接近表面熔 化温度时，双悬挂键单原子、c(2×2)和三聚体等亚稳态结构都消失，表面只存在稳定的p(2 ×1)结构. 关键词： 分子动力学模拟 表面结构 Si(001)表面 Stillinger-Weber势     

Al(001)表面上沉积Ti薄膜的分子动力学模拟

采用分子动力学模拟方法,研究了Ti原子连续沉积于Al(001)表面上的薄膜生长过程,分析了入射能量为0.1、5 eV和衬底温度为300、700 K时的界面结合及微观结构.模拟结果表明,增加入射能量和衬底温度,使Ti薄膜的表面越光滑;通过径向分布函数和键对分析技术对薄膜微观结构进行分析,发现衬底温度时薄膜微观结构影响较大,温度300 K及以下时,Ti薄膜主要是FCC结构,随着温度升高,FCC结构成分减少,无序结构成分增加,而入射能量则对薄膜微观结构没有明显影响.     

Ge diffusion on Si surfaces

Ge diffusion on Si(100), (111), and (110) surfaces has been studied by Auger electron spectroscopy and low energy electron diffraction in the temperature range from 600 to 800 °C. Surface diffusion coefficients versus temperature have been measured.     

单壁碳纳米管在石墨基底上运动的分子动力学模拟

采用分子动力学模拟方法研究单壁碳纳米管在石墨基底上的运动.首先碳纳米管在基底弛豫至平衡状态，然后对其施加一固定外力，撤去外力后，碳纳米管在基底上逐渐减速至停止.为了研究管径、手性角对运动方式的影响，本文选择了C(10,10)，C(10,9)，C(10,8)，C(10,5)，C(10,0)，C(8,8)六种单壁碳纳米管进行模拟.结果表明，碳纳米管在石墨基底上的运动方式由手性角决定，与管径无关.手性角等于30°时，碳纳米管与石墨基底之间为公度结构，碳纳米管的运动出现周期性的滑动和翻滚现象；手性角大于28.3°小于30°时，碳纳米管一边向前滑动一边滚动；手性角小于26.3°时，碳纳米管在基底上滑动.碳纳米管的手性角决定了它与石墨基底接触界面的微观构型，从而决定了碳纳米管的运动方式. 关键词： 分子动力学模拟 碳纳米管 动能 结构公度性     

Au/Cu(001)异质外延岛演化的分子动力学研究

利用分子动力学弛豫方法模拟了Au/Cu(001)异质外延生长初期Au异质外延岛的形貌演化，分析了Au外延岛演化过程中的局域应力及与基体结合能随表面岛尺寸的变化. 研究结果表明：当异质外延岛小于7×7时，外延岛原子分布呈现赝Cu点阵形貌；当外延岛达到8×8后，外延岛内开始出现失配位错，失配位错数量随外延岛尺寸的增加而增加. 局域压力分析指出，外延岛上原子之间的近邻环境不同导致了所受应力的差异，而外延岛的形变则是由外延岛原子的应力分布所决定. 研究还发现，失配位错的产生导致错位原子与基体原子之间的结合强度减弱，但相对增加了非错位原子与基体原子之间的结合强度. 关键词： 异质外延 表面形貌 局域压力 分子动力学模拟