温度对四频激光陀螺零偏的影响

讨论了温度对四频陀螺零偏的影响因素 ,通过各部件对温度冲击的响应分析了相对影响大小 ,指出可通过和频变化对零偏进行补偿 ,并以增益区、法拉第室温度进行校正。     

温度误差对激光陀螺零偏温度补偿精度的影响分析

分析了温度测量误差对环形激光陀螺(RLG)零偏补偿精度的影响,通过仿真,在动态温度模型中,发现温度测量误差主要通过温度变化率对补偿结果产生影响,提出了该模型在陀螺零偏动态温度补偿中是否考虑温度测量误差的标准。仿真结果表明,对使用的温度补偿模型与温度传感器而言,在温度补偿精度明显小于0.001°/h时,要考虑温度测量误差的影响。     

磁场对四频差动激光陀螺光强和零偏的影响

研究了四频差动激光陀螺输出光强和零偏随纵向磁场的变化规律。理论分析表明,当由纵向磁场引起的增益/色散曲线的塞曼分裂等于非互易分裂时,顺时针模式和逆时针模式的光强相等,零偏不随腔长的变化而变化,实验结果与理论分析基本一致。同时还发现顺时针和逆时针模式的光强随磁场线性变化,但变化量较小且易受温度的影响,不适合作为磁场大小的度量。由于沿谐振腔环路的增益和损耗并非处处相同,顺时针和逆时针光束入射到光电管上的量不相等,因此需要对顺时针和逆时针输出光强的放大倍数进行标定,以便进行色散平衡的控制。     

四频激光陀螺和频与温度关系的研究

研究了四频激光陀螺和频与温度之间的关系。通过静态和动态实验 ,证明了和频与温度的线性关系 ,并得到了拟合直线表达式。结果表明 ,和频与温度具有较好的线性关系 ,和频可作为温度测量的计量 ,而且具有较好的重复性。由于测量频率的精度较高 ,故由和频测量温度具有很高的分辨率。     

支承结构惯量对激光陀螺抖频及精度特性的影响分析

激光陀螺的机抖特性有效克服了陀螺的闭锁效应,是其高精度输出的重要保障。陀螺在不同惯性装置下的抖频会发生变化,这极大地影响了其输出精度,严重制约了激光陀螺在各类惯性装备下的服役能力。从激光陀螺抖动偏频系统入手,对陀螺及其支承结构进行了结构动力学建模及分析,从理论与原理实验两方面论证了支承结构惯量对陀螺抖频特性,乃至陀螺输出精度的影响,分析结果表明,减小支承结构惯量能提高陀螺抖频,进而提高其精度。为激光陀螺在惯导装备中更好的应用起到了指导作用。     

Q-MEMS陀螺零偏补偿技术研究

在对某型Q-MEMS(石英音叉陀螺)进行大量高低温环境试验的基础上,根据试验数据,建立了一种基于陀螺工作时间的零偏温度补偿模型,并用该模型对新测的试验数据进行了预测补偿。补偿结果表明:Q-MEMS陀螺经该模型补偿后可以将零偏减小至少一个数量级,并进一步提高了零偏稳定性,有效补偿了陀螺上电后的启动漂移,完全满足工程上的实时补偿要求。因此,该模型具有很强的工程实用价值。     

抖动参数对机抖激光陀螺零偏稳定性与角随机游走的影响

对传统方法中以抖动偏频量和抖动激励信号中的噪声强度来表示机抖激光陀螺抖动参数的方法进行了改进,以K参数和抖动幅度中的噪声强度来表示机抖激光陀螺的抖动参数,从而使不同抖动频率和注入效率的陀螺具有相同的比较标准。定量讨论了K参数与抖动幅度中噪声强度的大小对机抖激光陀螺零偏稳定性和角随机游走的影响。实验结果表明,当K参数取600～650之间、抖动幅度中的噪声强度取2%～3%之间时,机抖激光陀螺的零偏稳定性和角随机游走可以达到比较理想的状态。     

基于逐步回归分析的激光惯导温度补偿研究

针对激光陀螺惯导的温度补偿,将影响激光陀螺零偏的各种可能的变量作为零偏补偿的状态变量,利用逐步回归分析方法,挑选出对零偏贡献较大的显著变量,建立精准的数学物理模型,并对实测的激光陀螺进行温度补偿建模。结果表明,温度变化率以及与温度的交叉积对温度补偿模型的影响不显著,得到的温度补偿模型可以对陀螺的零偏进行实时补偿,提高了陀螺的精度。     

抖动偏频激光陀螺速率阈值特性研究

本文从理论上分析了正弦抖动偏频激光陀螺速率阈值特性,提出了一种用于测试抖动偏频激光陀螺速率阈值的试验方案,结果表明激光陀螺在零速率处存在与理论相符合的小死区,动态锁区值与陀螺速率阈值具有确定的对应关系。     

气体压强对塞曼激光陀螺偏频特性的影响研究

就气体压强对激光陀螺偏频特性影响进行了理论与实验研究.理论推导发现,激光陀螺内部的He-Ne气体压强对其偏频量有重要影响.He-Ne气体比率一定时,偏频量与其内部压强成线性关系.在不同气压下对激光陀螺偏频量与压强的关系进行了实验验证,实验结果与典型参量下的理论结果吻合得较好;给出了不同比率下激光陀螺偏频量与其压强的关系曲线.     

Evaluation of negative bias temperature instability in ultra-thin gate oxide pMOSFETs using a new on-line PDO method

A new on-line methodology is used to characterize the negative bias temperature instability (NBTI) without inherent recovery. Saturation drain voltage shift and mobility shift are extracted by I_D-V_D characterizations, which were measured before stress, and after every certain stress phase, using the proportional differential operator (PDO) method. The new on-line methodology avoids the mobility linearity assumption as compared with the previous on-the-fly method. It is found that both reaction--diffusion and charge-injection processes are important in NBTI effect under either DC or AC stress. A similar activation energy, 0.15 eV, occurred in both DC and AC NBTI processes. Also degradation rate factor is independent of temperature below 90\du\ and sharply increases above it. The frequency dependence of NBTI degradation shows that NBTI degradation is independent of frequencies. The carrier tunnelling and reaction--diffusion mechanisms exist simultaneously in NBTI degradation of sub-micron pMOSFETs, and the carrier tunnelling dominates the earlier NBTI stage and the reaction--diffusion mechanism follows when the generation rate of traps caused by carrier tunnelling reaches its maximum.     

Effect of substrate bias on negative bias temperature instability of ultra-deep sub-micro p-channel metal--oxide--semiconductor field-effect transistors

The effect of substrate bias on the degradation during applying a negative bias temperature (NBT) stress is studied in this paper. With a smaller gate voltage stress applied, the degradation of negative bias temperature instability (NBTI) is enhanced, and there comes forth an inflexion point. The degradation pace turns larger when the substrate bias is higher than the inflexion point. The substrate hot holes can be injected into oxide and generate additional oxide traps, inducing an inflexion phenomenon. When a constant substrate bias stress is applied, as the gate voltage stress increases, an inflexion comes into being also. The higher gate voltage causes the electrons to tunnel into the substrate from the poly, thereby generating the electron--hole pairs by impact ionization. The holes generated by impact ionization and the holes from the substrate all can be accelerated to high energies by the substrate bias. More additional oxide traps can be produced, and correspondingly, the degradation is strengthened by the substrate bias. The results of the alternate stress experiment show that the interface traps generated by the hot holes cannot be annealed, which is different from those generated by common holes.     

Study on the drain bias effect on negative bias temperature instability degradation of an ultra-short p-channel metal-oxide-semiconductor field-effect transistor

This paper studies the effect of drain bias on ultra-short p-channel metal-oxide-semiconductor field-effect transistor (PMOSFET) degradation during negative bias temperature (NBT) stress. When a relatively large gate voltage is applied, the degradation magnitude is much more than the drain voltage which is the same as the gate voltage supplied, and the time exponent gets larger than that of the NBT instability (NBTI). With decreasing drain voltage, the degradation magnitude and the time exponent all get smaller. At some values of the drain voltage, the degradation magnitude is even smaller than that of NBTI, and when the drain voltage gets small enough, the exhibition of degradation becomes very similar to the NBTI degradation. When a relatively large drain voltage is applied, with decreasing gate voltage, the degradation magnitude gets smaller. However, the time exponent becomes larger. With the help of electric field simulation, this paper concludes that the degradation magnitude is determined by the vertical electric field of the oxide, the amount of hot holes generated by the strong channel lateral electric field at the gate/drain overlap region, and the time exponent is mainly controlled by localized damage caused by the lateral electric field of the oxide in the gate/drain overlap region where hot carriers are produced.     

Effect of substrate bias and temperature on magnetron sputtered CrSiN films

The combine influence of substrate temperature and bias on microstructure and mechanical properties of CrSiN film was examined. The silicon content and phase constitutions of the films are independent on substrate temperature and bias. The crystal preferred orientation is controlled by substrate bias but unrelated to substrate temperature. The influence of bias (0 V to −300 V) on hardness is more obvious than that of the substrate temperature (100-500 °C).     

Effects of stress conditions on the generation of negative bias temperature instability-associated interface traps

The exponent n of the generation of an interface trap(Nit),which contributes to the power-law negative bias temperature instability(NBTI)degradation,and the exponent’s time evolution are investigated by simulations with varying the stress voltage Vgand temperature T.It is found that the exponent n in the diffusion-limited phase of the degradation process is irrelevant to both Vgand T.The time evolution of the exponent n is affected by the stress conditions,which is reflected in the shift of the onset of the diffusion-limited phase.According to the diffusion profiles,the generation of the atomic hydrogen species,which is equal to the buildup of Nit,is strongly correlated with the stress conditions,whereas the diffusion of the hydrogen species shows Vg-unaffected but T-affected relations through the normalized results.     

带温度补偿的分布式光纤温度传感系统设计

针对分布式光纤温度传感系统(Distributed Optical Fiber Temperature Sensing System,DTS)在线测温精度不高的问题,提出了使用光纤布拉格光栅(Fiber Bragg Grating,FBG)解调仪对DTS进行温度补偿。对不带温度补偿的DTS进行了温度测量和数据分析,证明了进行温度补偿的必要性。设计了带温度补偿的DTS并进行了温度测试。实验结果表明,在使用FBG解调仪对DTS进行温度补偿后,DTS的温度精确度可以达到0.3℃。     

pMOS器件直流应力负偏置温度不稳定性效应随器件基本参数变化的分析

应用负偏置温度不稳定性(negative bias temperature instability,NBTI),退化氢分子的漂移扩散模型,与器件二维数值模拟软件结合在一起进行计算,并利用已有的实验数据和基本器件物理和规律,分析直流应力NBTI效应随器件沟道长度、栅氧层厚度和掺杂浓度等基本参数的变化规律,是研究NBTI可靠性问题发生和发展机理变化的一种有效方法.分析结果显示,NBTI效应不受器件沟道长度变化的影响,而主要受到栅氧化层厚度变化的影响;栅氧化层厚度的减薄和栅氧化层电场增强的影响是一致的,决定了器件退化按指数规律变化;当沟道掺杂浓度提高,NBTI效应将减弱,这是因为器件沟道表面空穴浓度降低引起的;然而当掺杂浓度提高到器件的源漏泄漏电流很小时(小泄露电流器件),NBTI效应有明显的增强.这些结论对认识NBTI效应的发展规律以及对高性能器件的设计具有重要的指导意义.