基于模式分量最优稳定性准则的联想记忆学习算法

提出了设计联想记忆神经网络的模式分量最优稳定性准则，即使得每个模式分量对于模式畸变都具有最大的联想容错性。     

Donor–Acceptor Poly(3‐hexylthiophene)‐block‐Pendent Poly(isoindigo) with Dual Roles of Charge Transporting and Storage Layer for High‐Performance Transistor‐Type Memory Applications

Field‐effect transistor memories usually require one additional charge storage layer between the gate contact and organic semiconductor channel. To avoid such complication, new donor–acceptor rod–coil diblock copolymers (P3HT₄₄‐b‐Piso_n) of poly(3‐hexylthiophene) (P3HT)‐block‐poly(pendent isoindigo) (Piso) are designed, which exhibit high performance transistor memory characteristics without additional charge storage layer. The P3HT and Piso blocks are acted as the charge transporting and storage elements, respectively. The prepared P3HT₄₄‐b‐Piso_n can be self‐assembled into fibrillar‐like nanostructures after the thermal annealing process, confirmed by atomic force microscopy and grazing‐incidence X‐ray diffraction. The lowest‐unoccupied molecular orbital levels of the studied polymers are significantly lowered as the block length of Piso increases, leading to a stronger electron affinity as well as charge storage capability. The field‐effect transistors (FETs) fabricated from P3HT₄₄‐b‐Piso_n possess p‐type mobilities up to 4.56 × 10^?2 cm² V^?1 s^?1, similar to that of the regioregular P3HT. More interestingly, the FET memory devices fabricated from P3HT₄₄‐b‐Piso_n exhibit a memory window ranging from 26 to 79 V by manipulating the block length of Piso, and showed stable long‐term data endurance. The results suggest that the FET characteristics and data storage capability can be effectively tuned simultaneously through donor/acceptor ratio and thin film morphology in the block copolymer system.     

A Semi‐Floating Memory with 535% Enhancement of Refresh Time by Local Field Modulation

The recently proposed semi‐floating gate memory technology shows the potential to balance conflicts between writing speed and data storage. Although the introduction of the p–n junction greatly improves device writing speed, the inevitable junction leakage limits the further extension of data retention time. A local nonvolatile electric field is introduced by exploiting the polarization of ferroelectric gate dielectric HfZrO₄ to modulate the charge leakage speed of the p–n junction since the carrier density of 2D materials can be efficiently regulated. The refresh time is greatly prolonged more than 535%, solving the bottleneck problem of relatively short retention time of previous semi‐floating gate memory. In addition, the characteristics of device under low operation voltage is also explored, which can serve for further power reducing. This design realizes the combination of ultrafast writing operation and significant enhanced data retention ability, which provides a new idea of the development for high speed non‐volatile memory technology.     

一种具有防欺骗和挑战应答时限的动态身份认证技术

文章简要回顾了身份认证技术的发展历程和目前应用的动态身份认证技术原理,介绍了一种具有防欺骗和挑战应答时限的动态认证技术,以及此技术在现有技术上的改进和发展。该技术安全、可靠、简便易行,可以拒绝第三方的重放攻击,有效地防止了第三方对口令的猜测和穷举攻击,广泛应用于电子政务、网上银行、网上营销等各领域。     

A Hybrid Supercapacitor Fabricated with a Carbon Nanotube Cathode and a TiO2–B Nanowire Anode

Recently, a new hybrid supercapacitor, integrating both the advantages of supercapacitors and lithium‐ion batteries, was proposed and rapidly turned into state‐of‐the‐art energy‐storage devices with a high energy density, fast power capability, and a long cycle life. In this paper, a new hybrid supercapacitor is fabricated by making use of the benefits of 1D nanomaterials consisting of a carbon nanotube (CNT) cathode and a TiO₂–B nanowire (TNW) anode, and the preliminary results for such an energy‐storage device operating over a wide voltage range (0–2.8 V) are presented. The CNT–TNW supercapacitor is compared to a CNT–CNT supercapacitor, and discussed with regards to available energy densities, power capabilities, voltage profiles, and cycle life. On the basis of the total weight of both active materials, the CNT–TNW supercapacitor delivers an energy density of 12.5 W h kg^–1 at a rate of 10 C, double the value of the CNT–CNT supercapacitor, while maintaining desirable cycling stability. The combination of a CNT cathode and a TNW anode in a non‐aqueous electrolyte is proven to be suitable for high‐performance hybrid supercapacitor applications; this can reasonably be assigned to the interesting synergistic effects of the two nanomaterials. It is hoped that the results presented in this study might renew interest in the design of nanomaterials that are applicable not only to hybrid supercapacitors, but also to energy conversion and storage applications of the future.     

Toward High‐Performance Capacitive Potassium‐Ion Storage: A Superior Anode Material from Silicon Carbide‐Derived Carbon with a Well‐Developed Pore Structure

Potassium‐ion battery (PIB) using a carbon‐based anode is an ideal device for electrochemical energy storage. However, the large atomic size of potassium ions inevitably leads to huge volume expansion and the collapse of anodes, resulting in the severe capacity fading during the long‐term cycling. Herein, silicon carbide‐derived carbon (SiC‐CDC) with a controllable pore structure is synthesized with a concise etching approach. It exhibits a maximum capacity of 284.8 mA h g^?1 at a current density of 0.1 A g^?1 after 200 cycles as well as a highly reversible capacity of 197.3 mA h g^?1 at a current density of 1.0 A g^?1 even after 1000 cycles. A mixed mechanism of the potassium storage is proposed for this prominent performance. The interconnected pore structure with a high proportion of mesopore volume provides abundant active sites for the adsorption of potassium ions, a shortened electrolyte penetration path, and enlarged accumulation space for potassium ions, eventually leading to facilitated capacitive potassium storage inside this SiC‐CDC electrode. This work provides fundamental theories of designing pore structures for boosting capacitive potassium storage and unveils CDC‐based materials as the prospective anodes for high‐performance PIBs.