Monolithic integration of low-threshold-current 1.3 ?m GaInAsP/InP DFB lasers

Two 1.3 ?m GaInAsP/InP DFB lasers with low threshold currents (28 and 29 mA) were successfully integrated. Both DFB lasers operated continuously at temperatures of up to 68°C. The 12 ? separation in wavelength between the two lasers was produced by a 2 ? difference of the grating periods. A thermal interaction between the two lasers was estimated from the shift in their wavelengths.     

Monolithic integration of multiple quantum well DFB lasers and electroabsorption modulators

Advanced fibre optics telecommunication systems rely on high performance components amongst which photonic integrated circuits (PICs) play a major role. In particular, there has been a growing need for low chirp optical sources, such as externally modulated distributed feedback (DFB) lasers. In this paper, the various monolithic integration schemes of multiple quantum well DFB lasers and electro-absorption modulators are reviewed and typical applications of these devices are briefly presented.     

Monolithic integration of an InP/InGaAs four-channel transimpedance optical receiver array

Fully functional four-channel transimpedance receiver array OEICs have been fabricated on 2" diameter InP substrates. Each receiver channel has a bandwidth of 200 MHz and an average input equivalent noise current of around 6 pA/ square root (Hz). The array chip is 3.7 mm*3.2 mm in size and contains 88 components. This is believed to represent the highest level of optoelectronic integration yet reported on InP.<>     

Strained InGaAs/InAlAs MQW electroabsorption modulators with largebandwidth and low driving voltage

We demonstrate the improved modulation properties of a new strained InGaAs/InAlAs MQW electro-absorption modulator. This tensile strained MQW modulator shows low driving voltage (V_{15 dB}=1.2 V), large modulation bandwidth (f_{3 dB}>20 GHz), and a 10 Gbit/s eye pattern with a clear eye opening and high extinction ratio. The effective α parameter determined from waveform deterioration is 0.6, which is low enough for multigigabit long-haul fiber transmission systems     

InP/InAlAs/InGaAs quantum wires

Single InGaAs quantum wires and stacked InGaAs quantum wires with InAIAs barriers have been fabricated on V-grooved InP substrates by low pressure metal-organic chemical vapour deposition (MOCVD). We have found growth conditions where the InAIAs barrier exhibits a resharpening effect, similar to that of AlGaAs utilized for growth on GaAs substrates. The existence of structural and electronic quantum wires in the bottom of the grooves is proven.     

Monolithic integration on InP of a Wannier Stark modulator with astrained MQW DFB 1.55-μm laser

We present the technical approach and the preliminary device results on the first integration of a Wannier Stark (WS) electroabsorption (EA) modulator with a DFB laser on InP. The WS modulator active layer consists of a lattice matched InGaAs-InAlAs superlattice (SL) grown by solid source MBE. It is butt-coupled to a laser grown by AP-MOVPE whose active layer includes a strained InGaAsP-InGaAsP MQW stack. Device results cover static performances of integrated lasers and modulators, and measurements of high frequency characteristics (small signal bandwidth and 10 Gb/s eye diagram)     

InGaAs（InAIAs）／InP和InP／InAIAs湿法选择腐蚀研究

介绍了两种选择腐蚀液对InGaAs（InAlAs）／InP和InP／InAlAs异质结构材料选择腐蚀的实验结果，重点介绍在InAlAs上面生长InP的湿法选择腐蚀，用HCl：H3PO4：CH3COOH系列腐蚀液，InP／InAlAs选择比大于300。InP／InAlAs湿法选择腐蚀的结果可以很好应用到OEIC芯片制作中，并取得了较好的器件及电路结果。     

Dynamic frequency response for InGaAs/InAlAs multiple quantum well optical modulators

The frequency response of InGaAs/InAlAs multiple-quantum-well (MQW) optical modulators and their dependence on incident light power are described. No decrease in small-signal modulation bandwidth was observed up to ten times the initial value of 1 mW. The mechanism of the frequency-response difference between InGaAs/InAlAs MQW modulators and InGaAs/InP modulators is discussed.<>     

Thermal optical bistability in InGaAs/InAlAs MQW etalons at 1.5 mu m wavelength

The authors report on the fabrication of devices assembled in one unit and the observation of thermal optical bistability with low threshold and high reproducibility using the low-energy side of a 1.54- mu m etalon peak. The devices are InGaAs/InAlAs multi-quantum-well (MQW) nonlinear etalons, whose finesse of 20 was obtained by using a SiO/sub 2//TiO/sub 2/ high-reflectivity coating. The authors also show that the nonlinear characteristics depend on the wavelength of the incident light detuned from the etalon peak. The relation between optical bistable characteristics and incident beam wavelength is studied in detail using a tunable F-center laser.<>     

InGaAs(InAlAs)/InP和InP/InAlAs湿法选择腐蚀研究

介绍了两种选择腐蚀液对InGaAs(InAlAs)I/nP和InPI/nAlAs异质结构材料选择腐蚀的实验结果,重点介绍在InAlAs上面生长InP的湿法选择腐蚀,用HClH∶3PO4C∶H3COOH系列腐蚀液,InPI/nAlAs选择比大于300。InPI/nAlAs湿法选择腐蚀的结果可以很好应用到OEIC芯片制作中,并取得了较好的器件及电路结果。     

Microwave performance of InAlAs/InGaAs/InP MODFET's

Modulation-doped InAlAs/InGaAs/InP structures were grown by molecular beam epitaxy (MBE) and fabricated into FET's with excellent RF gain performance. The intrinsic transconductance was about 400 mS/mm at 300 K. Current gain cutoff frequencies of up to 26.5 GHz were obtained in 1-µm gate devices. Extremely small S12and large S21led to a very largef_{max}of 62 GHz. These results represent the best reported figures for 1-µm devices in this material system and slightly better than those obtained in recently developed pseudomorphic modulation-doped field effect transistors (MODFET's).     

Microwave performance of InGaAs/InAlAs/InP SISFETs

Microwave S-parameter measurements and equivalent-circuit modeling of In_0.53Ga_0.47As/In_0.52Al_0.48 As/InP semiconductor-insulator-semiconductor FETs (SISFETs) of 1.1-μm gate length are discussed. The devices incorporated wide-bandgap buffers, self-aligned contact implants, and refractory air-bridge gates. Their DC I-V characteristics displayed sharp pinchoff, good output conductance of 10-20 mS/ss, and extrinsic transconductance up to 220 ms/mm at room temperature. The maximum unity-current-gain frequency was 27 GHz. Gate resistance was found to be the dominant factor limiting microwave power gain     

Optical effect in InAlAs/InGaAs/InP MODFET

Analytical results have been presented for an optically illuminated InAlAs/InGaAs/InP MODFET with an opaque gate. Partial depletion of the active region is considered. The excess carriers due to photo generation are obtained by solving the continuity equation. The energy levels are modified due to the generation of carriers. The surface recombination effect has also been taken into account. The results of I-V characteristics have been compared under dark conditions, since under illumination experimental results are not available. The offset voltage, sheet concentration, I-V, and transconductance have been presented and the effect of illumination discussed     

InGaAs/InAlAs SCH-MQW lasers with superlattice optical confinementlayers grown by MBE

InGaAs/InAlAs separate-confinement-heterostructure multiple-quantum-well (SCH-MQW) lasers with superlattice optical confinement layers grown by molecular beam epitaxy are discussed. Room-temperature operation with a low threshold current density of 1.7 kA/cm² at 1.537 μm wavelength is obtained for these lasers     

InGaAs/InAlAs/InP collector-up microwave heterojunction bipolartransistors

Collector-up InGaAs/InAlAs/InP heterojunction bipolar transistors (HBTs) were successfully fabricated, and their DC and microwave characteristics measured. High collector current density operation (J_c>30 kA/cm²) and high base-emitter junction saturation current density (J₀>10^-7 A/cm²) were achieved. A cutoff frequency of f _t=24 GHz and a maximum frequency of oscillation f _max=20 GHz at a collector current density of J₀ =23 kA/cm² were achieved on a nominal 5-μm×10-μm device     

High output power single longitudinal mode graded index separateconfinement multiple quantum well InGaAs/InP distributed feedback (GRINSCH MQW DFB) lasers

A high continuous-wave (CW) output and high quantum efficiency of 1.5 μm-wavelength InGaAs/InP graded-index separate-confinement multiple-quantum-well DFB lasers were demonstrated. A threshold current of 45 mA with a maximum output power close to 100 mW and a quantum efficiency of 0.33 mW/mA was obtained. Single-frequency light output with power as high as 16 dBm (40 mW) was launched into a single-mode fiber     

单片InGaAs／InP PIN PD阵列

文章简要地介绍了ＩｎＧａＡｓ／ＩｎＰ ＰＩＮ ＰＤ阵列的制作现状及其应用和发展趋势。     

Monolithic integration of InGaAs/InP PIN PD with MISFET on stepless substrate

A low-dark-current (1?2 nA) InGaAs/InP single-heterostructure planar PIN PD was fabricated and integrated with an InP MISFET on stepless substrates. The characteristics of the PIN PD did not change with integration.     

Monolithic integration of InGaAsP/InP semiconductor lasers using the stop-cleaving technique

In this paper we describe the stop-cleaving technique for locally cleaving the mirrors of semiconductor lasers without cleaving the entire substrate, and its applications. The technique is suitable for batch processing with a good yield and, therefore, can be applied to preparing optoelectronic integrated circuits (OEIC's). InGaAsP/InP double-channel-planar-buried-heterostructure lasers emitting at 1.3 μm are fabricated utilizing this technique with threshold currents as low as 20 mA and differential quantum efficiencies as high as 60 percent (two facets). The implementation of this technique for preparing a monolithically integrated pair of lasers is also demonstrated. The integrated dual-laser configuration is utilized to obtain a monolithically integrated laser-detector pair by operating one of the lasers under reverse bias, and to enhance longitudinal mode discrimination by utilizing the optical feedback from the self-aligned stop-cleaved facet of the second cavity.     

Implant Compositional Disordering on InGaAs／InP MQW Structures

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