基于S-型光催化机制CuInS2内嵌中空凹面氮化碳光催化分解H2O制H2（英文）

光催化解离H2O合成H2是绿色可再生的太阳能光子能量转换策略之一.目前,增强光催化材料对太阳能光子的捕获并将之有效利用仍然是一个具有挑战性的课题.光催化解离H2O反应包括三个过程:太阳能光子能量促使光生电子在半导体材料带隙中的跃迁;光生电子定向传输;光生电子与吸附在半导体材料表面的H2O分子发生反应.第一过程需要强的太阳光子捕获能力以产生足够的光生载流子;第二、三过程在动力学上反映了光生载流子在各个竞争过程中能否有效利用的问题,如光生电子迁移与H2O作用的速度很慢(~μs),而电子与空穴的复合速度快(~ps).目前研究者很难协调半导体材料的电学和光学特性以满足光生载流子在热力学和动力学两方面的要求.g-C3N4是由C、N原子通过sp2杂化组成的二维π共轭体系.当g-C3N4结构偏离二维平面时,共轭体系的π电子由凹面迁移到凸面,促使凹、凸面形成表观电势差,有利于电子的定向传输.本文通过卷曲sp2杂化离域均三嗪体系偏离二维平面,得到空心凹面g-C3N4结构,便捷地优化了半导体的电子结构.将CuInS2嵌入生长于空心g-C3N4的凹面,所构成的半导体光催化材料CuInS2@C3N4展现了增强的光捕获能力,以及电子定向传输转移能力.结合XPS、光电流测试、电化学阻抗谱、稳态及瞬态荧光等表征手段揭示空心g-C3N4凹、凸面表观电势差驱动光生电子以S-型光催化作用机制从CuInS2的Cu 2p向g-C3N4的N 1s的路径转移.因而,所构建的CuInS2@C3N4在可见光激发下产氢效率提高到373μmol·h^?1·g^?1,其产氢效率分别是二维平面g-C3N4负载1 wt%Pt和3 wt%Pd效率的1.57倍和1.35倍,表明空心g-C3N4凹、凸面电势差可以显著地促进光生电子分离和利用率,从而提高光催化解离水制氢效率.本文可增强g-C3N4的可持续太阳能转换性能,也适用于其他半导体材料以替代贵金属光催化体系,降低光催化产氢技术成本,促进光催化技术的应用.     

Growth and photoelectrochemical properties of ordered CuInS2 nanorod arrays

CuInS(2) nanorod array structures are synthesized via a template-free and non-vacuum route for the first time. The obtained CuInS(2) thin films show promising conversion efficiency in a two-electrode photoelectrochemical cell.     

Fabrication of CuInS2 films from electrodeposited Cu/In bilayers: effects of preheat treatment on their structural, photoelectrochemical and solar cell properties

Polycrystalline CuInS(2) films were fabricated by sulfurization of electrodeposited Cu and In metallic precursor films in a Cu-rich composition at 520 °C in H(2)S (5% in Ar). Structural analyses revealed that the adherence of the thus-formed CuInS(2) film to the Mo substrate was strongly dependent on heating profiles of the Cu/In bilayer film: a CuInS(2) film with poor adherence having many crevices was formed when the Cu/In bilayer film was heated monotonously from room temperature to 520 °C in Ar within 25 min followed by sulfurization, whereas CuInS(2) films with good adherence were obtained when the Cu/In films were pretreated at 110 °C in Ar for 10-60 min just before increasing the temperature up to 520 °C for sulfurization. It was also clarified that the CuInS(2) film obtained without 110 °C pretreatment had pinholes inside the film, whereas the CuInS(2) films formed after 110 °C pretreatment showed no notable pinholes. Photoelectrochemical responses of these CuInS(2) films in an electrolyte solution containing Eu(III) indicated that the CuInS(2) films obtained after 110 °C pretreatment had higher external quantum efficiency (EQE) values than those of films obtained without 110 °C pretreatment, mainly due to better adherence of 110 °C pretreated CuInS(2) films to the Mo substrate than the CuInS(2) film obtained without 110 °C pretreatment. The performance of solar cells with an Al:ZnO/Zn(S,O)/CdS/CuInS(2)/Mo structure also depended on the structural characteristics of the CuInS(2) films, i.e., preliminary conversion efficiencies of ca. 5% were obtained for devices based on the CuInS(2) films obtained after 110 °C pretreatment, whereas the device prepared by the CuInS(2) film without 110 °C pretreatment showed the conversion efficiency less than 1.5%.     

Solvothermal synthesis of zincblende and wurtzite CuInS2 nanocrystals and their photovoltaic application

We report a simple solvothermal synthesis approach to the growth of CuInS(2) nanocrystals with zincblende- and wurtzite-phase structures. Zincblende nanocrystals with particle sizes of 10-20 nm were produced using oleylamine as the solvent. When ethylenediamine was used as the solvent, similarly sized wurtzite nanocrystals with some degree of particle aggregation were formed. Use of a mixture of these solvents gave products with mixed phases including some polyhedral nanostructures. The crystal phases of these nanocrystals were carefully determined by X-ray diffraction and transmission electron microscopy analysis. All the samples exhibit strong absorption from the entire visible light region to the near-infrared region beyond 1300 nm. Pure-phase zincblende and wurtzite CuInS(2) nanocrystals were employed as ink in the fabrication of solar cells. The spray-coated nanocrystal layer was subjected to a selenization process. A power conversion efficiency of ~0.74% and a good external quantum efficiency profile over broad wavelengths have been measured. The results demonstrate that wurtzite and zincblende CuInS(2) nanocrystals may be attractive precursors to light-absorbing materials for making efficient photovoltaic devices.     

Numerical study of metal oxide Schottky type solar cells

Metal oxide (MO) semiconductors hold the promise for the development of high efficiency solar cells with low cost. Currently heterostructure type MO solar cells have been theoretically and experimentally studied, demonstrated their potential for applications. This paper highlights a numerical investigation on Schottky type MO solar cells using CuO as the absorption layer. It is shown that the doping concentration, absorption layer thickness, barrier height and back surface field have significant effects on the performance of the devices. Under the optimal structure and doping, the Schottky barrier solar cells, if can be fabricated with suitable techniques, can have a conversion efficiency up to 18.5%, comparable to MO heterojunction solar cells, but at a much simpler structure and lower cost. Some guidelines about the materials selection and structure design for MO Schottky barrier solar cells are summarized.     

Current density enhancement for quantum dot-sensitized solar cells by modulation on the quantum dot loading amount of anatase nanowire array photoelectrodes

Journal of Solid State Electrochemistry - A second spin-coating process was employed for CuInS2 quantum dot (QD)-sensitized TiO2 nanowire-based solar cells, which is anticipated to increase the QD...     

Electronic Structure Effect of Polythiophene Derivatives and Nano N-Zn-Ag/TiO2 on Performance of Organic Thin Film Solar Cell

Nanocrystal N-Zn-Ag/TiO₂ powders were prepared with N-Zn/TiO₂ by photo deposition method. A series of pure polymers P3HT[poly(3-hexylthiophene)], P3OT[poly(3-octylthiophene)], P3DT[poly(3-decylthiophene)] and P3DDT[poly(3-dodecylthiophene)], was synthesized, which were used to synthesize p-n type semiconductor materials P3HT/N-Zn-Ag-TiO₂, P3OT/N-Zn-Ag-TiO₂, P3DT/N-Zn-Ag-TiO₂ and P3DDT/N-Zn-Ag-TiO₂ by in situ che-mical method. X-Ray diffraction(XRD) and infrared(IR) spectroscopy showed the structure of the polymers and complexes. Ultraviolet-visible(UV-Vis) spectra and cyclic voltammograms(CV) showed the optical and electronic performance of the polymers and complexes. Two new single and double organic thin film heterojunction solar cells were prepared with the above mentioned synthesized powders as raw materials. Current-voltage(I-V) measurements indicate that the conversion efficiency of the single organic thin film heterojunction solar cell is higher than that of the double organic thin film heterojunction solar cells. Single organic thin film heterojunction solar cells based on P3DT/N-Zn-Ag-TiO₂ can get a photoelectric conversion efficiency of 0.0408%. The performance of electronic transform between electron donor and acceptor on organic thin film solar cells was researched.     

Dithieno[3,2‐b:2′,3′‐d]pyrrole Cored p‐Type Semiconductors Enabling 20 % Efficiency Dopant‐Free Perovskite Solar Cells

Organic p‐type semiconductors with tunable structures offer great opportunities for hybrid perovskite solar cells (PVSCs). We report herein two dithieno[3,2‐b:2′,3′‐d]pyrrole (DTP) cored molecular semiconductors prepared through π‐conjugation extension and an N‐alkylation strategy. The as‐prepared conjugated molecules exhibit a highest occupied molecular orbital (HOMO) level of ?4.82 eV and a hole mobility up to 2.16×10^?4 cm² V^?1 s^?1. Together with excellent film‐forming and over 99 % photoluminescence quenching efficiency on perovskite, the DTP based semiconductors work efficiently as hole‐transporting materials (HTMs) for n‐i‐p structured PVSCs. Their dopant‐free MA_0.7FA_0.3PbI_2.85Br_0.15 devices exhibit a power conversion efficiency over 20 %, representing one of the highest values for un‐doped molecular HTMs based PVSCs. This work demonstrates the great potential of using a DTP core in designing efficient semiconductors for dopant‐free PVSCs.     

Shape- and phase-controlled synthesis of monodisperse, single-crystalline ternary chalcogenide colloids through a convenient solution synthesis strategy

Colloidal, monodisperse, single-crystalline pyramidal CuInS2 and rectangular AgInS2 nanocrystals were successfully synthesized through a convenient and improved solvothermal process that uses hexadecylamine as a capping reagent. The crystal phase, morphology, crystal lattice, and chemical composition of the as-prepared products were characterized by using X-ray diffraction, transmission electron microscopy (TEM), high-resolution TEM, and energy dispersive X-ray spectroscopy. Results revealed that the as-synthesized CuInS2 colloid is in the tetragonal phase (size: 13-17 nm) and the AgInS2 in the orthorhombic structure (size: 17+/-0.5 nm). A possible shape evolution and crystal growth mechanism has been suggested for the formation of pyramidal CuInS2 and rectangular AgInS2 colloids. Control experiments indicated that the morphology- and/or phase-change of CuInS2 and orthorhombic AgInS2 colloids are temperature- and/or time-dependent. CuInS2 colloids absorb well in the range of visible light at room-temperature, indicating its potential application as a solar absorber. Two photoluminescence (PL) subbands at 1.938 and 2.384 eV in the PL spectra of CuInS2 colloids revealed that the recombination of the closest and the second closest donor-acceptor pairs within the CuInS2 lattice, in which the donor defect (Cui) occupies an interstitial position and the acceptor defect (VIn) resides at an adjacent cation site. In addition, the synthesis strategy developed in this study is convenient and inexpensive, and could also be used as a general process for the synthesis of other pure or doped ternary chalcogenides that require a controlled size (or shape). This process could be extended to the synthesis of other functional nanomaterials.     

Controlled electrodeposition of Cu-Ga from a deep eutectic solvent for low cost fabrication of CuGaSe2 thin film solar cells

The electrochemical deposition of Ga and Cu-Ga alloys from the deep eutectic solvent choline chloride/urea (Reline) is investigated to prepare CuGaSe(2) (CGS) semiconductors for their use in thin film solar cells. Ga electrodeposition is difficult from aqueous solution due to its low standard potential and the interfering hydrogen evolution reaction (HER). Ionic liquid electrolytes offer a better thermal stability and larger potential window and thus eliminate the interference of solvent breakdown reactions during Ga deposition. We demonstrate that metallic Ga can be electrodeposited from Reline without HER interference with high plating efficiency on Mo and Cu electrodes. A new low cost synthetic route for the preparation of CuGaSe(2) absorber thin films is presented and involves the one-step electrodeposition of Cu-Ga precursors from Reline followed by thermal annealing. Rotating disk electrode (RDE) cyclic voltammetry (CV) is used in combination with viscosity measurements to determine the diffusion coefficients of gallium and copper ions in Reline. The composition of the codeposited Cu-Ga precursor layers can be controlled to form Cu/Ga thin films with precise stoichiometry, which is important for achieving good optoelectronic properties of the final CuGaSe(2) absorbers. The morphology, the chemical composition and the crystal structure of the deposited thin films are analysed by scanning electron microscopy/energy dispersive X-ray spectroscopy (SEM/EDX) and X-ray diffraction (XRD). Annealing of the Cu-Ga films in a selenium atmosphere allowed the formation of high quality CuGaSe(2) absorber layers. Completed CGS solar cells achieved a 4.1% total area power conversion efficiency.     

Deposition of CuInS2 thin films using copper- and indium/sulfide-containing precursors through a two-stage MOCVD method

Copper indium disulfide (CuInS2; CIS) films were deposited on various substrates by two-stage metal-organic chemical vapor deposition (MOCVD) at relatively mild conditions, using Cu- and In/S-containing precursors without toxic H2S gas: first, a pure Cu thin film was prepared on glass or indium/tin oxide glass substrates by using a single-source precursor, bis(ethylbutyrylacetato)copper(II) or bis(ethylisobutyrylacetato)copper(II); second, on the resulting Cu film, tris(N,N-ethylbutyldithiocarbamato)indium(III) was treated to produce CIS films by a MOCVD method at 430 degrees C. In this process, their thicknesses and stoichiometries were found to be elaborately controlled on demand by adjusting the process conditions. The optical band gap of the stoichiometric CIS film was about 1.41 eV, which is in the near-optimal range for harvesting solar radiation energy.     

PbS/CdS-sensitized mesoscopic SnO2 solar cells for enhanced infrared light harnessing

Metal oxide semiconductors with lower lying conduction band minimum and superior electron mobility are essential for efficient charge separation and collection in PbS-sensitized solar cells. In the present study, mesoscopic SnO(2) was investigated as an alternative photoanode to the commonly used TiO(2) and examined comprehensively in PbS-sensitized liquid junction solar cells. To exploit the capability of PbS in an optimized structure, cascaded nPbS/nCdS and alternate n(PbS/CdS) layers deposited by a successive ionic layer adsorption and reaction method were systematically scrutinized. It was observed that the surface of SnO(2) has greater affinity to the growth of PbS compared with TiO(2), giving rise to much enhanced light absorption. In addition, the deposition of a CdS buffer layer and a ZnS passivation layer before and after a PbS layer was found to be beneficial for efficient charge separation. Under optimized conditions, cascaded PbS/CdS-sensitized SnO(2) exhibited an unprecedented photocurrent density of 17.38 mA cm(-2) with pronounced infrared light harvesting extending beyond 1100 nm, and a power conversion efficiency of 2.23% under AM 1.5, 1 sun illumination. In comparison, TiO(2) cells fabricated under similar conditions showed much inferior performance owing to the less efficient light harnessing of long wavelength photons. We anticipate that the systematic study of PbS-sensitized solar cells utilizing different metal oxide semiconductors as electron transporters would provide useful insights and promote the development of semiconductor-sensitized mesoscopic solar cells employing panchromatic sensitizers.     

Novel two-step CdS deposition strategy to improve the performance of Cu_2ZnSn(S,Se)_4 solar cell

Kesterite Cu_2ZnSn(S,Se)_4(CZTSSe)solar cells have drawn worldwide attention for their promising photovoltaics performance and earth-abundant element composition,yet the record efficiency of this type of device is still far lower than its theoretical conversion efficiency.Undesirable band alignment and severe non-radiative recombination at CZTSSe/CdS heterojunction interfaces are the major causes limiting the current/voltage output and overall device performance.Herein,we propose a novel two-step CdS deposition strategy to improve the quality of CZTSSe/CdS heterojunction interface and thereby improve the performance of CZTSSe solar cell.The two-step strategy includes firstly pre-deposits CdS thin layer on CZTSSe absorber layer by chemical bath deposition(CBD),followed with a mild heat treatment to facilitate element inter-diffusion,and secondly deposits an appropriate thickness of CdS layer by CBD to cover the whole surface of pre-deposited CdS and CZTSSe layers.The solar energy conversion efficiency of CZTSSe solar cells with two-step deposited CdS layer approaches to 8.76%(with an active area of about 0.19 cm~2),which shows an encouraging improvement of over 87.98% or 30.16% compared to the devices with traditional CBD-deposited CdS layer without and with the mild annealing process,respectively.The performance enhancement by the two-step CdS deposition is attributed to the formation of more favorable band alignment at CZTSSe/CdS interface as well as the effective decrease in interfacial recombination paths on the basis of material and device characterizations.The two-step CdS deposition strategy is simple but effective,and should have large room to improve the quality of CZTSSe/CdS heterojunction interface and further lift up the conversion efficiency of CZTSSe solar cells.     

Inorganic p-type semiconductors and carbon materials based hole transport materials for perovskite solar cells

Incorporation of proper inorganic p-type semiconductors as hole transport layer has great potential to increase long-term stability while maintaining high power conversion efficiency of perovskite solar cells with low material cost.     

Emerging approach in semiconductor photocatalysis: Towards 3D architectures for efficient solar fuels generation in semi-artificial photosynthetic systems

Interest in the application of semiconductors toward the photocatalytic generation of solar fuels, including hydrogen from water-splitting and hydrocarbons from the reduction of carbon dioxide, remains strong due to concerns over the continued emission of greenhouse gases as well as other environmental impacts from the use of fossil fuels. While the efficiency and durability of such systems will depend heavily on the types of the semiconductors, co-catalysts, and mediators employed, the dimensionality of the semiconductors employed can also have a significant impact. Recognizing the broad nature of this field and the many recent advances in it, this review focuses on the emerging approaches from 0-dimensional (0D) to 3-dimensional (3D) semiconductor photocatalysts towards efficient solar fuels generation. We place particular emphasis on systems that are “semi-artificial”, that is, hybrid systems that integrate naturally occurring enzymes or whole cells with semiconductor components that harvest light energy. The semiconductors in these systems must have suitable interfacial properties for immobilization of enzymes to be effective photocatalysts. These requirements are particularly sensitive to surface structures and morphology, making the semiconductor dimensionality a critical factor. In addition to providing an overview of advances towards designing 3D architecture in semi-artificial photosynthetic field, we also present recent advances in fabrication strategies for 3D inorganic photocatalysts.     

8.01% CuInGaSe2 solar cells fabricated by air-stable low-cost inks

CuInGaSe(2) (CIGS), a promising thin film solar cell material, has gained lots of attention in decades due to its high energy conversion efficiency and potential lower manufacture cost over conventional Si solar cells. As a cheaper processing method compared to vacuum-based techniques, solution-based deposition has been successfully applied to fabricate electronic devices, such as transistors and solar cells. In this paper, we reported CIGS thin film solar cells with an energy conversion efficiency reaching up to 8.01% using air-stable, low-cost inks. The newly developed inks consist of commercially available, low-cost compounds and solvents and can be processed using a variety of printing and coating techniques. More importantly, the inks can produce CIGS films free of copper selenides and amorphous carbon, two common by-products from solution-based CIGS processes. The mechanism for the transformation from metal salt precursor films to CIGS absorber thin films and the influence of selenium vapour pressure on absorber film quality and photovoltaic device performance were investigated and discussed. High-quality CIGS films with micrometer-sized crystals were obtained by using higher selenization partial pressure.     

Synthesis and characterization of NaSbS2 thin film for potential photodetector and photovoltaic application

Solution-processed semiconductors such as perovskite compounds have attracted tremendous attention to photovoltaic research due to the significantly higher energy conversion efficiencies and lower processing costs.However,concerns over stability and the toxicity on lead in CH_3NH_3PbI_3 create the need for still easily-accessible but more stable and environmentally friendly materials.Here,we present NaSbS_2 as a non-toxic,earth-abundant promising material consisting of densely packed(1/∞)[SbS_2~-]polymeric chains and sodium ions.The ionic nature makes it sharing the similar dissolution superiority with perovskite,providing great potential for low-cost and large-scale fabrication.Phase pure NaSbS_2thin film was successfully fabricated using spray-pyrolysis method,and its photovoltaic relevant material,optical and electrical properties were carefully studied.Finally,a prototype NaSbS_2-based thinfilm solar cell has been successfully demonstrated,yielding a power conversion efficiency of 0.13%.The systematic experimental and theoretical investigations,combined with proof-of-principle device results,indicate that NaSbS_2 is indeed very promising for photovoltaic application.     

镉的硫族化合物半导体纳米线阵列的模板法合成及其紫外可见吸收光谱研究(英文)

以多孔氧化铝为模板 ,用交流电分别通过含有相应的CdCl2 、ZnCl2 、单质S、Se等的二甲亚砜 (DMSO)溶液 ,沉积CdS、CdSe以及CdxZn1-xS半导体纳米线阵列并研究其紫外可见吸收光谱 .实验结果表明 ,当半导体纳米线的直径小于 2 5nm时 ,其吸收边相对于体相的吸收边产生蓝移 ,而且蓝移的幅度随着半导体纳米线直径的减小而增加 ,显示了明显的量子限域效应 .     

Crystals Array via Oriented Nucleation and Growth Induced by Smectic E Mesophase of C7-T-BTBT

Long-range order crystalline thin films of organic semiconductors have attracted wide attention owing to their high charge carrier mobility. However, uncontrolled crystal nucleation and growth during the thin film drying process cause the formation of grain boundaries, thereby limiting the long-range order. Herein, we achieved the oriented nucleation and growth of organic semiconductors by off-centre spin-coating at the temperature of the smectic E(SmE) liquid crystal mesophase, and then followed by Ostwald ripening during solvent vapour annealing. The thin film of 2-(5-heptylthiophen-2-yl)[1]benzothieno[3,2-b] [1]benzothiophne (C7-T-BTBT) blended with 40%(mass fraction) poly(methyl methacrylate)(PMMA) was prepared by off-centrespin-coating at SmE mesophase(170℃), followed by solvent vapour annealing in chloroform for 24 h(chloroform is a good solvent for C7-T-BTBT and PMMA). The C7-T-BTBT molecules grew to rod-like crystals, which were mostly arranged parallel to each other. The crystal growth was perfect and resulted in a single crystal. The average length of the crystals was approximately 87 μm. Moreover, the highest charge carrier mobility is 1.62 cm²·V⁻¹·s⁻¹ as against that of the film prepared at 25℃(0.06 cm²·V⁻¹·s⁻¹).     

Indolo[3,2-b]carbazole-based thin-film transistors with high mobility and stability

Proper functionalization of indolo[3,2-b]carbazole led to a new class of high-performance organic semiconductors suitable for organic thin-film transistor (OTFT) applications. While 5,11-diaryl-substituted indolo[3,2-b]carbazoles without long alkyl side chains provided amorphous thin films upon vacuum deposition, those with sufficiently long alkyl side chains such as 5,11-bis(4-octylphenyl)indolo[3,2-b]carbazole self-organized readily into highly crystalline layered structures under similar conditions. OTFTs using channel semiconductors of this nature exhibited excellent field-effect properties, with mobility up to 0.12 cm(2) V(-1) s(-1) and current on/off ratio to 10(7). As this class of organic semiconductors has relatively low HOMO levels and large band gaps, they also displayed good environmental stability even with prolonged exposure to amber light, an appealing characteristic for OTFT applications.