Spin-dependent current in resonant tunneling diode with ferromagnetic GaMnN layers

The spin-polarized tunneling current through a double barrier resonant tunneling diode (RTD) with ferromagnetic GaMnN emitter/collector is investigated theoretically. Two distinct spin splitting peaks can be observed at current-voltage (I-V) characteristics at low temperature. The spin polarization decreases with the temperature due to the thermal effect of electron density of states. When charge polarization effect is considered at the heterostructure, the spin polarization is enhanced significantly. A highly spin-polarized current can be obtained depending on the polarization charge density.     

Effect of in-plane magnetic field on spin polarization in the presence of the Dresselhaus spin–orbit effect

In this paper, we theoretically study the effect of the in-plane magnetic field on spin polarization in the presence of the Dresselhaus spin–orbit effect. It is shown that the large spin polarization can be achieved in such a nanostructure due to the effects of both the Dresselhaus spin–orbit term and the in-plane magnetic field, but the latter plays a main role in the tunneling process. It is also shown that with the increase of in-plane magnetic field, the degree of spin splitting obviously becomes larger.     

Spin transistor in the EuO:Fe/GaAs contact

Spin-wave structures with magnetic-field-driven current-voltage characteristics at room temperature were produced using a spintronic europium-monoxide-based thin-film emitter and a single-crystal n-GaAs semiconductor collector. This manifests practical implementation of the spin current transport and creation of a high-temperature spin transistor with the magnetic semiconductor/nonmagnetic semiconductor contact.     

Anomalous Josephson current in junctions with spin polarizing quantum point contacts

We consider a ballistic Josephson junction with a quantum point contact in a two-dimensional electron gas with Rashba spin-orbit coupling. The point contact acts as a spin filter when embedded in a circuit with normal electrodes. We show that with an in-plane external magnetic field an anomalous supercurrent appears even for zero phase difference between the superconducting electrodes. In addition, the external field induces large critical current asymmetries between the two flow directions, leading to supercurrent rectifying effects.     

Optical out-of-plane spin polarization and charge conductivities in spin-orbit-coupled systems in the presence of an in-plane magnetic field

Out-of-plane spin and charge responses to the terahertz field for a clean two-dimensional electron gas with a Rashba spin-orbit interaction in the presence of an in-plane magnetic field are studied. We show that the characteristic optical spectral behavior is remarkably different from that of the system in the absence of in-plane magnetic fields. It is found that the optical spin polarization normal to the plane is nonzero even for this clean system, in sharp contrast to the static case. Due to the combined effect of spin-orbit coupling and in-plane magnetic field, both diagonal and off-diagonal components of optical charge conductivity tensor are nonvanishing. It is indicated that one can control the spin polarization and the optical current by adjusting the optical frequency. In addition, the out-of-plane spin polarization and conductivities strongly rely on the direction of the external magnetic field. Nevertheless, they meet different angle-dependent relations. This dynamical out-of-plane spin polarization could be measured by the time-resolved Kerr rotation technique.     

Mapping the surface spin structure of large unit cells: reconstructed mn films on Fe(001)

Using spin-polarized scanning tunneling microscopy with ring electrodes, the in-plane spin polarization of Mn on Fe(001) was measured. A large (square root 10 x 2 square root 10)R18.4 degrees reconstruction with a noncollinear spin structure was found. By combining maps of the spin polarization for two orthogonal in-plane directions, the vector field of the polarization in the unit cell could be constructed. The complex behavior is explained on the basis of the tendency of Mn to form antiferromagnetically coupled surface dimers.     

Influence of in-plane magnetic field on spin polarization in the presence of the oft-neglected k-Dresselhaus spin-orbit coupling

The influence of in-plane magnetic field on spin polarization in the presence of the oft-neglected k³-Dresselhaus spin-orbit coupling was investigated. The k³-Dresselhaus term can produce a limited spin polarization. The in-plane magnetic field plays a great role in the tunneling process. It can generate the perfect spin polarization of the electrons and the ideal transmission coefficient for spin up and down simultaneously. In energy scale, complete separation between spin up and down resonance was obtained by a relatively higher in-plane magnetic field while a comparatively lower in-plane magnetic field vanishes the spin separation. On the other hand, the spin relaxation can be suppressed by compensating the oft-neglected k³-Dresselhaus spin orbit coupling using a relatively lower in-plane magnetic field.     

Quantum states and linear response in dc and electromagnetic fields for the charge current and spin polarization of electrons at the Bi/Si interface with the giant spin-orbit coupling

An expansion of the nearly free-electron model constructed by Frantzeskakis, Pons, and Grioni [1] describing quantum states at the Bi/Si(111) interface with the giant spin-orbit coupling is developed and applied for the band structure and spin polarization calculation, as well as for the linear response analysis of the charge current and induced spin caused by a dc field and by electromagnetic radiation. It is found that the large spin-orbit coupling in this system may allow resolving the spin-dependent properties even at room temperature and at a realistic collision rate. The geometry of the atomic lattice combined with spin-orbit coupling leads to an anisotropic response for both the current and spin components related to the orientation of the external field. The in-plane dc electric field produces only the in-plane components of spin in the sample, while both the in-plane and out-of-plane spin components can be excited by normally propagating electromagnetic wave with different polarizations.     

Dynamic nuclear polarization by electrical spin injection in ferromagnet-semiconductor heterostructures

Electrical spin injection from Fe into AlxGa1-xAs quantum well heterostructures is demonstrated in small (<500 Oe) in-plane magnetic fields. The measurement is sensitive only to the component of the spin that precesses about the internal magnetic field in the semiconductor. This field is much larger than the applied field and depends strongly on the injection current density. Details of the observed hysteresis in the spin injection signal are reproduced in a model that incorporates the magnetocrystalline anisotropy of the epitaxial Fe film, spin relaxation in the semiconductor, and the dynamic polarization of nuclei by the injected spins.     

Experimental realization of a quantum spin pump

We demonstrate the operation of a quantum spin pump based on cyclic radio-frequency excitation of a GaAs quantum dot, including the ability to pump pure spin without pumping charge. The device takes advantage of bidirectional mesoscopic fluctuations of pumped current, made spin dependent by the application of an in-plane Zeeman field. Spin currents are measured by placing the pump in a focusing geometry with a spin-selective collector.     

面内形状各向异性能对自旋转矩振荡器零场振荡特性的影响

利用Landau-Lifshitz-Gilbert-Slonczewski方程, 在理论上研究了由磁矩垂直于膜面的自由层和磁矩平行于膜面的极化层组成的自旋转矩振荡器的振荡特性. 数值结果表明面内的形状各向异性能, 可以使自旋转矩振荡器在无磁场情形下产生自激振荡. 此特性可以用能量平衡方程解释, 即面内形状各向异性能可以导致系统中自旋转矩提供的能量与阻尼过程所消耗的能量之间的平衡. 特别是, 面内的形状各向异性能越大, 自旋转矩振荡器的可操控电流范围越大, 并且产生微波信号的频率越大, 但其阈值电流几乎不变.     

Electron self-energy effect on a heterojunction bipolar transistor at T=0

An electron self-energy effect on a graded-gap heterojunction bipolar transistor at T=0 is considered. It is found that two competing mechanisms affect the collector current vs. emitter base bias voltage relations: (I) threshold voltage lowering for electron injection from emitter to base improves it: while (II) a decelerating field on injected minority carriers in the base degrades it. In a sufficiently large built-in field in the graded-gap base, negative transconductance appears as a result of the effect (I).     

Electron spin polarization in field emission: Calculation of the effects due to external fields

In field emission experiments with spin polarized electrons a magnetic field is superposed on the electric emission field to define the preferred spin direction. The motion of the polarization vector in these fields was calculated for rays emanating from individual points of the emitter by integrating the equation of motion and taking into account relativistic terms. There is a slight shift of the polarization vector from its initial direction. If the initial polarization is aligned with the magnetic field and the emission tip is sufficiently well centred in the magnetic field, the tilting of the polarization vector for a beam of electrons starting not too far from the tip apex is less than 10°.     

Spin polarization of charge carriers and Andreev reflection in (LaCa)MnO/superconductor point contacts

Spin polarization of charge carriers in La_0.65Ca_0.35MnO₃ (LCMO) is studied using point-contact Andreev spectroscopy. Pb and MgB₂ are used to make superconducting electrodes. In all cases, the transport spin polarization obtained from the conductivity of LCMO/superconductor point contacts does not exceed 80–85%. Different models of the current flow through the superconductor-ferromagnetic metal contact and possible reasons for noncomplete spin polarization of a current in manganites are explored. The level of spin polarization observed in Sharvin contacts (contact area ～10⁴ Ų) is most naturally explained in terms of a model that suggests separation of the crystal into nanosized magnetic phases, only one of which is a ferromagnetic metal with full spin polarization of charge carriers.     

Theoretical study on spin-polarized injection of electrical currents into polymer semiconductors

Different from electrons and holes in traditional inorganic semiconductors, the charge carriers in polymer semiconductors are spin polarons and spinless bipolarons. In this paper, a theoretical model is presented to describe the spin-polarized injection of electrical currents from a ferromagnetic contact into a nonmagnetic polymer semiconductor. In this model, a new relation of conductivity to concentration polarization for polymer semiconductors is introduced based on a three-channel model to describe the spin-polarized injection of electrical currents under large electrical current densities. The calculated results of the model reveal the effects of the polaron ratio, the carrier concentration polarization, the interfacial conductance, the bulk conductivity of materials, and the electrical current density, etc. on the spin polarization of electrical currents. As conclusions, the large and matched bulk conductivity of materials, the small spin-dependent interfacial conductance, the thin polymer thickness and the large enough electrical current are critical factors for upgrading the spin polarization of electrical currents in polymer semiconductors. Particularly, when the polaron ratio in polymer semiconductors approaches the concentration polarization of the ferromagnetic contact, a modest concentration polarization is sufficient for achieving a nearly complete spin-polarized injection of electrical currents.     

Giant out-of-plane spin component and the asymmetry of spin polarization in surface Rashba states of bismuth thin film

We have performed high-resolution spin- and angle-resolved photoemission spectroscopy of bismuth thin film on Si(111) to investigate the spin structure of surface states. Unlike the conventional Rashba splitting, the magnitude of the in-plane spin polarization is asymmetric between the two elongated surface hole pockets across the zone center. Moreover, we uncovered a giant out-of-plane spin polarization as large as the in-plane counterpart which switches the sign across the Γ-M line. We discuss the present finding in terms of the symmetry breaking and the many-body effects.     

Temperature dependence of magnetocurrent in spin-valve transistor: a phenomenological study

The temperature dependence of magnetocurrent in the spin-valve transistor has been theoretically explored based on phenomenological model. We find that temperature dependence of the collector current strongly depends on the relative orientation of magnetic moment of ferromagnetic metals due to spin mixing effect. For example, the parallel collector current is decreasing with increasing temperatures, while the anti-parallel collector current is increasing. We then obtain decreasing magnetocurrent with increasing temperatures. The result accords with the experimental data in qualitative manner. Along with this, we find that temperature dependence of hot electron spin polarization can also contribute to the magnetocurrent at finite temperatures. This phenomenological model calculations suggest that it is essential to understand the relative importance of spin mixing effect and hot electron spin polarization in the spin-valve transistor at finite temperatures.     

Magnetic-field-induced singularity in the tunneling current through an InAs quantum dot

The tunneling transport through a GaAs/(AlGa)As/GaAs single-barrier heterostructure with self-assembled InAs quantum dots is studied experimentally at low temperatures. An anomalous increase in the tunneling current through the quantum dots is observed in magnetic fields both parallel and perpendicular to the current. This result cannot be understood in the framework of the single-electron approximation. The proposed explanation of the phenomenon is based on the modified Matveev-Larkin theory, which predicts the appearance of a singularity in the tunneling current through the zero-dimensional state in a magnetic field because of the interaction between the tunneling electron and the spin-polarized three-dimensional electron gas in the emitter. The absence of spin splitting in the experimental resonance peaks is caused by the complete spin polarization of the emitter in relatively weak magnetic fields.     

Spin current in an electron waveguide tunnel-coupled to a topological insulator

We show that electron tunneling from edge states in a two-dimensional topological insulator into a parallel electron waveguide leads to the appearance of spin-polarized current in the waveguide. The spin polarization P can be very close to unity and the electron current passing through the tunnel contact splits in the waveguide into two branches flowing from the contact. The polarization essentially depends on the electron scattering by the contact and the electron-electron interaction in the one-dimensional edge states. The electron-electron interaction is treated within the Luttinger liquid model. The main effect of the interaction stems from the renormalization of the electron velocity, due to which the polarization increases with the interaction strength. Electron scattering by the contact leads to a decrease in P. A specific effect occurs when the bottom of the subbands in the waveguide crosses the Dirac point of the spectrum of edge states when changing the voltage or chemical potential. This leads to changing the direction of the spin current.     

In-plane magnetic field-induced spin polarization and transition to insulating behavior in two-dimensional hole systems

Using a novel technique, we make quantitative measurements of the spin polarization of dilute [ (3.4-6.8)x10(10) cm(-2)] GaAs (311)A two-dimensional holes as a function of an in-plane magnetic field. As the field is increased the system gradually becomes spin polarized, with the degree of spin polarization depending on the orientation of the field relative to the crystal axes. Moreover, the behavior of the system turns from metallic to insulating before it is fully spin polarized. The minority-spin population at the transition is approximately 8x10(9) cm(-2), close to the density below which the system makes a transition to an insulating state in the absence of a magnetic field.