Enhanced conductance blockade due to Pauli exclusion in tunnel junctions with half-metallic electrodes

A defect-state mediated conductance blockade effect has been studied in magnetic tunnel junctions consisting of La_0.7Sr_0.3MnO₃ (LSMO) electrodes and a SrTiO₃ (STO) barrier. The blockade threshold is an order of magnitude greater than the Coulomb charging energy estimated from the conductance oscillations at low temperature. The blockade voltage decreases with the increase of the temperature or the magnetic field, whereas the Coulomb charging energy washes out at higher temperature but it does not show strong dependence on magnetic field. An explanation is offered in terms of the spin blockade effect due to the combination of the discrete Coulomb charging on the defect state in STO and the half-metallicity of the LSMO electrodes. The result sheds new light on the half-metallic nature of LSMO.     

The dynamic characteristics of harvesting energy from mechanical vibration via piezoelectric conversion

As an alternative power solution for low-power devices, harvesting energy from the ambient mechanical vibration has received increasing research interest in recent years. In this paper we study the transient dynamic characteristics of a piezoelectric energy harvesting system including a piezoelectric energy harvester, a bridge rectifier, and a storage capacitor. To accomplish this, this energy harvesting system is modeled, and the charging process of the storage capacitor is investigated by employing the in-phase assumption The results indicate that the charging voltage across the storage capacitor and the gathered power increase gradually as the charging process proceeds, whereas the charging rate slows down over time as the charging voltage approaches to the peak value of the piezoelectric voltage across the piezoelectric materials. In addition, due to the added electrical damping and the change of the system natural frequency when the charging process is initiated, a sudden drop in the vibration amplitude is observed, which in turn affects the charging rate. However, the vibration amplitude begins to increase as the charging process continues, which is caused by the decrease in the electrical damping （i.e., the decrease in the energy removed from the mechanical vibration）. This electromechanical coupling characteristic is also revealed by the variation of the vibration amplitude with the charging voltage.     

Hall resistivity of granular metals

We calculate the Hall conductivity sigma(xy) and resistivity rho(xy) of a granular system at large tunneling conductance g(T)>1. We show that in the absence of Coulomb interaction the Hall resistivity depends neither on the tunneling conductance nor on the intragrain disorder and is given by the classical formula rho(xy)=H/(n*ec), where n* differs from the carrier density n inside the grains by a numerical coefficient determined by the shape of the grains. The Coulomb interaction gives rise to logarithmic in temperature T correction to rho(xy) in the range Gamma less or similar T less or similar min(g(T)E(c), E(Th)), where Gamma is the tunneling escape rate, E(c) is the charging energy, and E(Th) is the Thouless energy of the grain.     

Influence of electromagnetic fluctuations on the resonant tunneling of electrons

We have considered the influence of electromagnetic fluctuations on electron tunneling via one non-degenerate resonant level, the problem that is relevant for electron transport through quantum dots in the Coulomb blockade regime. We show that the overall effect of the fluctuations depends on whether the electron bands in external electrodes are empty or filled. In the empty band case, depending on the relation between the tunneling rate Γ and characteristic frequency Ω of the fluctuations, the field either simply shifts the conductance peak (for rapid tunneling, Γ Ω) or broadens it (for Γ Ω). In the latter case, the system can be in three different regimes for different values of the coupling g between electrons and the field. Increasing interaction strength in the region g < 1 leads to gradual suppression of the conductance peak at the bare energy of the resonant level ε₀, while at g 1 it leads to the formation of a new peak of width at the energy ε₀ + E_cis a charging energy. For intermediate values of g the conductance is non-vanishing in the entire energy range from ε₀ to ε₀ + E_c. For filled bands the problem is essentially multi-electron in character. One consequence of this is that, in contrast to the situation with the empty band, the fluctuations of the resonant level do not suppress conductance at resonance for g < 1. At g> 1 a Coulomb gap appears in the position of the resonant level as a function of its bare energy which leads to suppression of conductance.     

Capacitance fluctuations in quantum dots

We discuss fluctuations of the charging energy E_C and gate voltage spacings between Coulomb oscillation conductance peaks, as computed within spin density functional theory for a realistic GaAs–AlGaAs dot. We explicitly exhibit the fluctuations in the portion of the total free energy which incorporate the interaction between the dot and its surroundings. These variations in the dot capacitance show a dispersion which is typically greater than the dispersion of the total dot charging energy.     

Charging and interaction of individual impurities in a monolayer organic crystal

We use a scanning tunneling microscope to study the charging of Ag-doping centers in a monolayer of C(60) molecules supported on a thin Al(2)O(3) film grown on the NiAl(110) surface. Differential conductance spectroscopy shows that charging affects the conduction through C(60) molecules located around the doping centers. This effect is used to observe the electrostatic interaction of a pair of centers. Charging of one doping center affects the energy levels of the other, an analogue of the field-effect action.     

硅量子点中电子的荷电动力学特征

利用频率依赖电容谱的测量,对于SiO₂/硅量子点/SiO₂/硅衬底隧 穿电容中硅量子点的荷电特征进行了研究.由于量子点的极小尺寸和良好的均匀性,室温下 在强反型区成功地观察到了与单电子隧穿相关的两个电容和电导共振峰,它们分别对应于硅 衬底导带上的电子与量子点中第一与第二个基态之间直接隧穿过程.实验数据分析给出了量 子点中的库仑荷电能,并进行了讨论. 关键词： 量子点 电容谱 库仑荷电能 直接隧穿     

Single electron charging effects in semiconductor quantum dots

We have studied charging effects in a lateral split-gate quantum dot defined by metal gates in the two dimensional electron gas (2 DEG) of a GaAs/AlGaAs heterostructure. The gate structure allows an independent control of the conductances of the two tunnel barriers separating the quantum dot from the two 2 DEG leads, and enables us to vary the number of electrons that are localized in the dot. We have measured Coulomb oscillations in the conductance and the Coulomb staircase in current-voltage characteristics and studied their dependence on the conductances of the tunnel barriers. We show experimentally that at zero magnetic field charging effects start to affect the transport properties when both barrier conductances are smaller than the first quantized conductance value of a point contact at 2e ²/h. The experiments are described by a simple model in terms of electrochemical potentials, which includes both the discreteness of the electron charge and the quantum energy states due to confinement.     

Spacing and width of Coulomb blockade peaks in a silicon quantum dot

We present an experimental study of the fluctuations of Coulomb blockade peak positions of a quantum dot. The dot is defined by patterning the two-dimensional electron gas of a silicon MOSFET structure using stacked gates. The ratio of charging energy to single-particle energy is considerably larger than in comparable GaAs/AlGaAs quantum dots. The statistical distribution of the conductance peak spacings in the Coulomb blockade regime was found to be unimodal and does not follow the Wigner surmise. The fluctuations of the spacings are much larger than the typical single-particle level spacing and thus clearly contradict the expectation of random matrix theory. Measurements of the natural line width of a set of several adjacent conductance peaks suggest that all of the peaks in the set are dominated by electrons being transported through a single-broad energy level.     

Violation of the Wiedemann-Franz law in a single-electron transistor

We study the influence of Coulomb interaction on the thermoelectric transport coefficients for a metallic single-electron transistor. By performing a perturbation expansion up to second order in the tunnel-barrier conductance, we include sequential and cotunneling processes as well as quantum fluctuations that renormalize the charging energy and the tunnel conductance. We find that Coulomb interaction leads to a strong violation of the Wiedemann-Franz law: the Lorenz ratio becomes gate-voltage dependent for sequential tunneling, and is increased by a factor 9/5 in the cotunneling regime. Finally, we suggest a measurement scheme for an experimental realization.     

Conductance through strongly interacting rings in a magnetic field

We study the conductance through finite Aharonov-Bohm rings of interacting electrons weakly coupled to non-interacting leads at two arbitrary sites. This model can describe an array of quantum dots with a large charging energy compared to the interdot overlap. As a consequence of the spin-charge separation, which occurs in these highly correlated systems, the transmittance is shown to present pronounced dips for particular values of the magnetic flux piercing the ring. We analyze this effect by numerical and analytical means and show that the zero-temperature equilibrium conductance in fact presents these striking features which could be observed experimentally.     

基于自洽输运理论的介观体系动态电导的研究

基于介观体系电子动态输运的自洽理论,讨论了介观结构的动态电导.作为该理论的应用,采用一介观相干平行板电容器模型来进行研究. 结果表明:体系的动态电导与外场频率和体系费米能有关,为一复数且有有限虚部. 当外场频率较小时,动态电导随费米能的变化所呈现的特性和直流情形非常相似,但是随着外场频率的增加,两者差异就变得非常明显,体系动态电导随外场频率的变化呈现一些峰值结构. 在给定体系费米能时,动态电导随着外场频率的变化而产生振荡,并且出现了负的电导虚部,电导虚部的正负表明了体系的电容特性和电感特性. 关键词： 自洽输运理论 相干平行板电容器 电导 介观体系     

Transport spectroscopy of a single dopant in a gated silicon nanowire

We report on spectroscopy of a single dopant atom in silicon by resonant tunneling between source and drain of a gated nanowire etched from silicon on insulator. The electronic states of this dopant isolated in the channel appear as resonances in the low temperature conductance at energies below the conduction band edge. We observe the two possible charge states successively occupied by spin-up and spin-down electrons under magnetic field. The first resonance is consistent with the binding energy of the neutral D0 state of an arsenic donor. The second resonance shows a reduced charging energy due to the electrostatic coupling of the charged D- state with electrodes. Excited states and Zeeman splitting under magnetic field present large energies potentially useful to build atomic scale devices.     

Transport properties of granular metals at low temperatures

We investigate transport in a granular metallic system at large tunneling conductance between the grains, g(T)>1. We show that at low temperatures, Tg(T)delta) behavior where conductivity is controlled by the scales of the order of the grain size. In three dimensions we predict the metal-insulator transition at the bare tunneling conductance g(C)(T)=(1/6pi)ln((E(C)/delta), where E(C) is the charging energy of a single grain. Corrections to the density of states of granular metals due to the electron-electron interaction are calculated. Our results compare favorably with the logarithmic dependence of resistivity in the high-T(c) cuprate superconductors indicating that these materials may have a granular structure.     

Quantum phase diagram of granular superconducting quantum dots array

We study the quantum phase diagram of granular superconducting quantum dots (GSQD) array. We implement the physics of granularity by considering site dependent Josephson couplings, on-site charging energies and the intersite interactions. We predict dimer density wave and staggered phases at the insulating state for higher order commensurability. Several parts of the quantum phase diagram of GSQD are in contrast with the clean superconducting quantum dots array. We also obtain the superconducting phase of GSQD. We develop the theory for weak tunneling conductance and the Coulomb energy is smaller than the superconducting gap.     

Interaction-driven spin precession in quantum-dot spin valves

We analyze spin-dependent transport through spin valves composed of an interacting quantum dot coupled to two ferromagnetic leads. The spin on the quantum dot and the linear conductance as a function of the relative angle theta of the leads' magnetization directions is derived to lowest order in the dot-lead coupling strength. Because of the applied bias voltage spin accumulates on the quantum dot, which for finite charging energy experiences a torque, resulting in spin precession. The latter leads to a nontrivial, interaction-dependent, theta dependence of the conductance. In particular, we find that the spin-valve effect is reduced for all theta not equal pi.     

Transport in split-gate silicon quantum dots

We report on the transport properties of novel Si quantum dot structures with controllable electron number through both top and side gates. Quantum dots were fabricated by a split-gate technique within a standard MOSFET process. Four-terminal dc electrical measurements were performed at 4.2 K in a liquid helium cryostat. Strong oscillations in the conductance through the dot are observed as a function of both the top gate bias and of the plunger bias. An overall monotonic and quasi-periodic movement of the peak conductance is observed which is believed to be associated with the bare level structure of the electronic states in the dot coupled with the Coulomb charging energy. Crossing behavior is observed as well, suggestive of either many-body effects or symmetry breaking of the dot states by the applied bias.     

Equivalent distributed capacitance model of oxide traps on frequency dispersion of C-V curve for MOS capacitors

An equivalent distributed capacitance model is established by considering only the gate oxide-trap capacitance to explain the frequency dispersion in the C-V curve of MOS capacitors measured for a frequency range from 1 kHz to1 MHz.The proposed model is based on the Fermi-Dirac statistics and the charging/discharging effects of the oxide traps induced by a small ac signal.The validity of the proposed model is confirmed by the good agreement between the simulated results and experimental data.Simulations indicate thatthe capacitance dispersion of an MOS capacitor under accumulation and near flatband is mainly caused by traps adjacent to the oxide/semiconductor interface,with negligible effects from the traps far from the interface,and the relevant distance from the interface at which the traps can still contribute to the gate capacitance is also discussed.In addition,by excluding the negligible effect of oxide-trap conductance,the model avoids the use of imaginary numbers and complex calculations,and thus is simple and intuitive.     

Dielectric sensing by charging energy modulation in a nano-granular metal

Several sensing concepts using nanostructures prepared by focused-electron-beam-induced deposition have been developed over the last years. Following work on highly miniaturized Hall sensors for magnetic sensing with soft magnetic Co, strain and force sensing based on nano-granular platinum–carbon structures (Pt(C)) was introduced. Very recently, the capability of nano-granular Pt(C) structures to detect the presence of adsorbate water layers by conductance modulations was demonstrated. For magnetic and strain sensing, the underlying physical mechanisms of the sensing effect have been analyzed in detail and are now quite well understood. This is not the case for the adsorbate layer-induced conductance modulation effect. Here, we provide a theoretical framework that allows for a semi-quantitative understanding of the observed water-sensing effect. We show how the near-interface renormalization of the Coulomb charging energy in the nano-granular metal caused by the dielectric screening of the polarizable adsorbate layer leads to a conductance modulation. The model can account for the conductance modulation observed in the water adsorbate experiments and can also be applied to understand similar effects caused by near-interface dielectric anomalies of ferroelectric thin films on top of nano-granular Pt(C). Our findings provide a pathway toward optimized nano-granular layer structures suitable for a wide range of dielectric or local potential sensing applications.     

Influence of linker molecules on charge transport through self-assembled single-nanoparticle devices

We investigate electrical characteristics of single-electron electrode/nanoisland/electrode devices formed by alkanedithiol assisted self-assembly. Contrary to predictions of the orthodox model for double tunnel junction devices, we find a significant ( approximately fivefold) discrepancy in single-electron charging energies determined by Coulomb blockade (CB) voltage thresholds in current-voltage measurements versus those determined by an Arrhenius analysis of conductance in the CB region. The energies do, however, scale with particle sizes, consistent with single-electron charging phenomena. We propose that the discrepancy is caused by a multibarrier junction potential that leads to a voltage divider effect. Temperature and voltage dependent conductance measurements performed outside the blockade region are consistent with this picture. We simulated our data using a suitably modified orthodox model.