超细Ni80Cr20合金丝冷拉拔烧头及穿模工艺

采用冷拉拔技术制备超细Ni80Cr20合金丝,探索了电化学法烧头和超景深显微镜辅助穿模方法,开展了直径25.60μm的超细丝拉拔至21.14μm的烧头和穿模工艺研究。实验结果表明:采用电解电压为5V,0.2mol/L的HCl溶液,烧头时间为1s,超景深显微镜200倍放大模式,成功拉制直径为21.14μm的微丝;电化学法可以精确控制烧头电压和时间,同时超景深显微镜可以放大金刚石模具孔径,解决了烧头时间控制不准确和人工穿模的难题,显著提高了穿模效率和成功率。     

低温铝诱导晶化制备纳米晶硅薄膜的物相和光学性能研究

采用射频磁控溅射镀膜系统,在玻璃衬底上制备了非晶硅(α-Si)/铝(Al)复合薄膜,结合氮气(N₂)气氛中低温快速光热退火制备了纳米晶硅(nc-Si)薄膜;利用光学显微镜、共焦光学显微仪、X射线衍射(XRD)仪、拉曼散射光谱(Raman)仪和紫外-可见光-近红外分光光度计(UV-VIS-NIR)对纳米晶硅薄膜的表面形貌、物相及光学性能进行了表征,研究了退火工艺对薄膜性能的影响。结果表明： 300 ℃,25 min光热退火可使α-Si/Al膜晶化为纳米晶硅薄膜,晶化率为15.56%,晶粒尺寸为1.75 nm;退火温度从300 ℃逐渐升高到400 ℃,纳米晶硅薄膜晶粒尺寸、晶化率、带隙逐渐增加,表面均匀性、晶格畸变量逐渐减小;退火温度从400 ℃逐渐升高到500 ℃,纳米晶硅薄膜的晶粒尺寸、晶化率继续增加,带隙则逐渐降低;采用纳米晶硅薄膜的吸光模型验证了所制备的纳米晶硅薄膜的光学特性,其光学带隙的变化趋势与吸光模型得出的结果一致。     

热退火对ZnO薄膜表面形貌与椭偏特性的影响

利用原子力显微镜(AFM)和椭偏仪对溅射制备的硅基ZnO薄膜的热退火表面形貌与椭偏特性进行了研究。结果发现：未退火或低温退火(≤850℃)薄膜的形貌呈现较弱的各向异性,晶粒尺寸大小较为均匀,尺寸约为50nm。当经高温退火后,ZnO薄膜的晶粒尺寸明显增大,同时伴随晶粒尺寸分布非均匀化,较大的尺寸可达400nm,而较小的尺寸仅为50nm。此外,椭偏测量表明：椭偏参数在不同的退火温区的变化呈现明显差别;当退火温度高于850℃时,薄膜的结构有明显的变化。     

冷拉拔超细Ni80Cr20合金丝卷曲因素分析

Ni80Cr20超细丝经冷加工后呈规则的三维螺旋卷曲状态。实验研究了拉拔角度、变形量、拉拔速度和模具定径区长度对超细丝材曲率的影响，制定了NiCr合金丝单模冷拉拔工艺。结果表明:随拉拔角度的增加，丝材曲率逐渐增加；变形量增加，拉拔角度为17时，丝材曲率没有明显规律，基本在0.56 mm-1左右，但拉拔角度为0时，丝材曲率逐渐增加；拉拔速度小于10 mmin-1时，曲率逐渐增加，大于10 mmin-1时，曲率增加趋势变缓，大于30 mmin-1曲率又有所下降；定径区长度越长丝材曲率越小。分析认为，NiCr丝材表面产生的附加切变形及切变层的流动速度的不一致性是丝材产生卷曲的原因，且曲率越大残余应力越大。为减小不均匀变形，冷拉拔工艺采用0拉拔、拉拔速度10 mmin-1、模具定径区长度为模具定径区直径的60%。     

冷轧和退火对V-5Cr-5Ti合金组织结构和抗辐照硬化性能的影响

钒合金(V-5Cr-5Ti)是聚变堆第一壁以及包层的重要候选结构材料。不同加工工艺会对钒合金在聚变堆中的服役性能产生影响。本文利用兰州重离子研究装置(HIRFL)提供的337 MeV的高能Fe离子对不同程度冷轧(冷变形量分别为40%、60%和80%)以及冷轧后退火(1 273 K退火1 h)的V-5Cr-5Ti合金样品进行了辐照,研究了不同的冷轧和退火处理过程对材料抗辐照硬化性能的影响。电子背散射衍射技术(EBSD)测试结果显示,随着冷变形量的增加,样品中细小破碎晶粒比例增大,晶粒平均尺寸减小。退火处理后,细小破碎晶粒出现一定程度的长大,大晶粒几乎全部消失,晶粒尺寸分布更加均匀。维氏硬度结果表明随着冷变形量的增加,硬度随之增加,退火后硬度降低。辐照之后,材料硬度升高,出现了辐照硬化效应。在冷轧样品和退火样品中都观察到了辐照硬化效应随冷变形量的增加显著减弱的现象,这表明冷变形可以显著提高材料的抗辐照硬化能力。结合EBSD和硬度数据,对冷变形和退火处理引起钒合金抗辐照硬化性能变化的机理进行了讨论。讨论结果显示,冷轧使材料总的吸收尾闾增大,引起辐照硬化程度降低,退火处理使材料中晶界密度和位错密度降低,材料的总吸收尾闾降低,辐照硬化效应增加。     

H_2气氛退火处理对Nb掺杂TiO_2薄膜光电性能的影响

采用电子束沉积方法,以钛酸锶(SrTiO3)为衬底制备铌(Nb)掺杂TiO2薄膜并研究后续H2气氛退火处理对其薄膜样品光电性能的影响.结果发现H2气氛热退火处理能有效改善Nb掺杂TiO2薄膜的导电率,最佳电阻率达到5.46×10-3Ω·cm,在可见光范围内的透光率为60%—80%.导电性能的改善与H2气氛退火处理后多晶薄膜的晶粒尺寸变大和大量的氧空位形成及H原子掺杂有关.     

非晶硅薄膜的低温快速晶化及其结构分析

在镀铝的廉价玻璃衬底上高速沉积的非晶硅薄膜在不同的温度下退火10min.退火温度为500℃时,薄膜表面形成了硅铝的混合相, 非晶硅薄膜开始呈现了晶化现象;退火温度为550℃时,大部分(约80%)的非晶硅晶化为多晶硅,平均晶粒尺寸为500nm;退火温度为600℃时,几乎所有的非晶硅都转化为多晶硅,其平均晶粒尺寸约为1.5μm.     

超细钨丝的电解腐蚀制备及其性能表征

 直径小于7 μm的超细钨丝是制备Z-pinch丝阵负载的主要原料，为了满足Z-pinch物理实验需要，利用电解腐蚀法原理，制备出了直径最小为3.0 μm的超细钨丝。研究了电解液温度、电解液质量分数、电解电压和收丝速度等工艺条件对钨丝的影响，并用扫描电镜、原子力显微镜和万能测力计测试了所制备钨丝的直径、形貌及抗拉强度。实验表明，电解电压和收丝速度是影响钨丝腐蚀速度的主要因素，所制备的钨丝表面光滑,均方根粗糙度为2.42 nm，直径为3.5 μm的钨丝其抗拉强度为2.32 g。利用这种方法所制备的超细钨丝已用作Z-pinch丝阵负载的靶材料，取得了很好的物理实验结果，X光能量已达到36.58 kJ。     

钙钛矿薄膜的微结构和光电特性优化

分别以纯二甲基甲酰胺、纯二甲基亚砜以及二者不同比例的混合物作为前驱体溶剂,制备钙钛矿薄膜样品.将薄膜样品分为两组,分别将其置于氮气氛围中进行热退火和二甲基亚砜蒸汽氛围中进行溶剂退火,并对薄膜样品的微观结构和光电特性进行系统研究分析.结果表明,与热退火相比,经溶剂退火后样品的平均晶粒尺寸和均匀性显著提升,从而减小了薄膜中晶粒边界或界面的体积分数.采用混合前驱体溶剂和后续溶剂退火增加了薄膜的厚度和可见光的利用率,有效改善了薄膜形貌,优化了结晶质量.同时薄膜光致发光强度的增加,表明薄膜缺陷态密度降低.采用优化后的钙钛矿薄膜作为吸收层制备太阳电池,其光电转换效率达到15.7%.     

纳米复合Fe-R-O(R=Hf Nd Dy)薄膜面内铁磁共振研究

用反应溅射方法制备了FeRO(R=Hf, Nd, Dy) 薄膜，并在400℃时对样品进行退火处理，x射线衍射和电子衍射结果显示纳米量级的Fe晶粒镶嵌在非晶氧化物基质中.用面内铁磁共振技术仔细测量了样品的共振吸收谱，并分析了局域磁化强度Ms与晶粒尺寸的关系.制备态样品呈现出显著的面内单轴各向异性，退火后单轴各向异性显著减弱，取而代之的是较弱的磁晶各向异性.利用公式(ω/γ)2=(Hres+HK)(Hres+HK+4πMs)求出局域磁化强度Ms，它随晶粒尺寸减小而减小，在晶粒尺寸为5nm时仅约为Fe体材料饱和磁化强度的30%.局域磁化强度与根据Fe的体积百分比算出的体磁化强度相比偏小，并与晶粒尺寸的倒数呈线性关系，说明在晶粒表面存在较强的磁矩钉扎效应. 关键词： 铁磁共振 局域磁化强度 单轴各向异性 磁晶各向异性     

Influence of precipitate-assisted nucleation on the microstructure and mechanical properties of Al-Mg-Si-Cu-Zn alloys

The influence of precipitation on the recrystallization nucleation and mechanical properties of Al-Mg-Si-Cu-Zn alloys was investigated by means of tensile tests, SEM, TEM, XRD and EBSD. The results reveal that there are distinct contributions from the various precipitates that form during annealing and that these critically influence the evolution of microstructure and its associated texture, as well as mechanical behaviour. In contrast to alloy sheets A, B, and C annealed at a lower temperature or for a shorter time, the T4P alloy sheet D with an annealing at 450°C for 3?h not only possesses almost identical strength and elongation, but also a higher average r (0.659) and n (0.313) values, and also a lower Δr (0.091) value. After solution treatment, the four alloy sheets are comprised of equiaxed grains with somewhat different grain sizes and different textures, but texture volume fraction and grain size in alloy sheet D both are decreased due to the effect of precipitate-assisted nucleation during solution treatment. The corresponding nucleation and growth mechanisms of recrystallization grains were established and the relationship between textures and r value in the four alloy sheets was also analyzed on the basis of a Visco-plastic self-consistent (VPSC) model.     

Microstructure evolution and properties of Al/Al–Mg–Si alloy clad wire during heat treatment

In this paper, heat treatment was carried out on Al/Al–Mg–Si alloy clad wire, and microstructure evolution and properties of Al/Al–Mg–Si alloy clad wire during heat treatment were investigated. During solution, contents of Mg and Si in inner matrix increased due to dissolution of primary Mg₂Si, and they also increased in outer matrix because Mg and Si diffused across the interface. Tensile strength of the clad wire increased firstly and then decreased, and elongation continuously increased, while conductivity continuously decreased with the increase in solution time. In aging process, Mg₂Si precipitated in both inner core and outer layer, and the content and average diameter of the precipitate increased with the increase in aging time. The content of precipitate was higher, and the average diameter was bigger in inner core. Tensile strength of the clad wire increased firstly and then decreased with the increase in aging time, and the elongation continuously decreased, while the conductivity continuously increased. The peak tensile strength of 202 MPa occurred at 8 h, when the corresponding elongation was 20 % and the conductivity reached 56.07 %IACS. Even tensile strength of the prepared clad wire approximately equaled to that of Al–0.5Mg–0.35Si alloy 203 MPa, the conductivity was obviously improved from 54.2 to 56.07 %IACS.     

Influence of vacuum annealing on structures and mechanical properties of Al–Ti–N films deposited by multi-arc ion plating

The Al–Ti–N films deposited by multi-arc ion plating have been annealed in vacuum within the range of 700–1100 °C. X-ray diffraction results showed that the structure of the films underwent the formation of coherent c-TiN and c-AlN for the annealing temperatures were up to 900 °C. A new phase AlTi_x (x = 0.50, 0.56, 3) was observed after annealing. The X-ray photoelectron spectroscopy results showed the intensity of Ti–Al bonds decreased as annealing temperatures increased, indicating the decomposition of (Al, Ti)N into c-TiN and c-AlN were at the expense of Ti–Al bonds. Differential scanning calorimetry experiments were used to investigate the dynamic behavior of the films during annealing process and the results showed that the N₂ formed as a consequence of the phase transformation process. The release of the N₂ resulted in the peeling of the films from the substrates. The film exhibited a maximum hardness of 39 GPa after 900 °C annealing due to the formation of coherent c-TiN and c-AlN phases. In addition, we also investigated the influence of vacuum annealing on adhesive strength.     

Crystal microstructure of annealed nanocrystalline Chromium studied by synchrotron radiation diffraction

The microstructure of electrodeposited nanocrystalline chromium (n-Cr) was studied by using synchrotron radiation (SR) diffraction, SEM, TEM, and EDX techniques. The as-prepared n-Cr samples show the standard bcc crystal structure of Cr with volume-averaged column lengths varying from 25 to 30 nm. The grain growth kinetics and the oxidation kinetics were studied by time resolved SR diffraction measurements with n-Cr samples annealed at 400, 600, and 800 °C. The grain growth process is relatively fast and it occurs within the first 10 min of annealing. The final crystallite size depends only on the annealing temperature and not on the initial grain size or on the oxygen content. The final volume-averaged column lengths observed after 50 min annealing are 40(4), 80(1), and 120(2) nm for temperatures 400, 600, and 800 °C, respectively. It is shown that annealing ex situ of n-Cr at 800 °C both under vacuum and in air gives a grain growth process with the same final crystallite sizes. The formation of the Cr₂O₃ and CrH phases is observed during annealing.     

Effect of annealing conditions on structural and magnetic properties of laser ablated copper ferrite thin films

The effect of annealing conditions on structural and magnetic properties of copper ferrite thin films on (100) Si substrates was examined in detail. After deposition, the ferrite thin films were post-annealed in vacuum and in oxygen atmosphere for several hours. It is found that the crystal structure of CuFe₂O₄ thin films changed drastically depending on different heating process. A maximum magnetization was achieved in the film that was vacuum annealed and it decreased remarkably after oxygen annealing.     

Effects of annealing atmosphere on the luminescent efficiency of ZnTe:O phosphors

The effect of the annealing atmosphere on the luminescent efficiency of ZnTe:O phosphors for X-ray imaging applications was studied. The phosphors were doped by ball-milling bulk ZnTe crystals in an O₂ atmosphere and annealed in various atmospheres: vacuum, N₂ or forming gas (95%N₂/5%H₂). All samples exhibited a deep red emission centered at 680 nm.The samples annealed in forming gas atmosphere exhibited an X-ray luminescent efficiency five times higher than the samples annealed in vacuum or N₂ atmospheres, which was attributed to the removal of surface tellurium oxides.     

Influence of Annealing Treatment on Structural,Optical, Electric,and Thermoelectric Properties of MBE-Grown ZnO

In this paper, we have reported the influence of annealing treatment on structural, optical, electrical, and thermoelectric properties of MBE-grown ZnO on Si substrate. After growth, a set of as grown ZnO was annealed in oxygen environment at 500–800°C and another set was annealed in different environments (vacuum, oxygen, zinc, and vacuum + zinc) at 600°C for one hour in a programmable furnace. X-ray diffraction (XRD) results demonstrated that all annealed samples exhibited a major diffraction peak related to (002) plane. The full width at half maximum (FWHM) of this plane decreased and crystalline size increased for oxygen annealed sample and it increased when samples were annealed in zinc, vacuum, and successively annealed in vacuum and zinc. Further, photoluminescence spectrum revealed that the intensity of band edge emission increased and defect emission decreased as annealing temperature (oxygen environment) increased while it decreased for rest of annealing ambient. It is suspected that annealing in oxygen environment causes compensation of the oxygen vacancies by the incoming oxygen flux, while annealing in zinc and vacuum generates more oxygen vacancies. Hall and Seebeck measurements are also consistent with these arguments.     

Tensile behavior of post-irradiation annealed Cu–Ni alloy

The present paper investigates the tensile properties of post-irradiation annealed Cu–Ni alloy. The specimens were irradiated with a 15 MeV electron beam at room temperature and the post-irradiation annealing (PIA) of the specimens was carried out under vacuum at 450 °C for 15–120 min. The yield stress (YS), ultimate tensile stress (UTS), percentage elongation, stress relaxation rate and activation volume of both as-irradiated and post-irradiation annealed specimens were examined at room temperature using a universal testing machine. The results show that PIA of the specimen at 450 °C for 15 min decreases its YS and UTS, whereas the percentage elongation is increased. The changes in the tensile parameters become more pronounced with increases in annealing time. Effects of PIA on the stress relaxation rate and activation volume indicate that the relaxation rate of post-irradiation annealed specimens increases, and the activation volume decreases, with an increase in annealing time.     

On the origin of intrinsic donors in ZnO

As-grown undoped zinc oxide (ZnO) films have been annealed in zinc-rich, oxygen-rich and vacuum ambient, and the electron concentration varied greatly after the annealing process. It decreased nearly two orders of magnitude after the sample was annealed in oxygen, while increased nearly three times after annealed in metallic zinc ambient, and increased slightly after annealed in vacuum. It was found that the variation trend of the electron concentration is always the same with the expected variation of oxygen vacancy (V_O) under the three investigated conditions, it is thus speculated that V_O may be the dominant donor source in ZnO. By supplying more oxygen during the growth process to suppress V_O, ZnO films with lower electron concentration were obtained, which verifies the above speculation.