缓冲夹层影响异质结有机光伏器件性能研究

制备了结构为CuPc/缓冲层/C₆₀异质结的有机光伏器件,分别选用三氧化钼和红荧烯为缓冲层,研究了增加缓冲层对器件性能的影响.结果表明,增加三氧化钼和红荧烯缓冲层后器件的开路电压和光电转换效率都得到提高,器件的短路电流密度和填充因子都有所降低.开路电压从没有缓冲层时的0.39 V分别提高到0.58 V、0.55 V,转换效率从0.36%提高到0.44%,短路电流从1.92 mA/cm²分别降低到1.77 mA/cm²、1.81 mA/cm²,填充因子从0.48分别减少到0.43、0.44.进一步研究表明器件的短路电流密度受缓冲层厚度的影响很大,当缓冲层厚度很小时,器件短路电流密度还有所增加,但随着缓冲层厚度的增加,短路电流密度逐渐减小,当缓冲层厚度为10 nm时,器件短路电流密度减少到0.35 mA/cm².开路电压随着厚度的增加逐渐增加,从1 nm时的0.43 V增加10 nm时0.63 V.根据整数电荷转移模型和界面能级理论解释有机光伏器件开路电压提高以及短路电流密度减少的原因,为有机太阳能电池性能的改善提供了研究方法.     

Influence of nature of precursors on the formation and structure of Cu-Ni-Cr mixed oxides from layered double hydroxides

Analogous layered double hydroxides (LDHs) with the Cu²⁺/Ni²⁺/Cr³⁺ molar ratio of 1/2/1 on the brucite-like layers and interlayer anions (viz sulfate, nitrate and carbonate, respectively) were synthesized by a coprecipitation method. For the first time, the effects of interlayer anions on the structural properties of as-synthesized LDHs and resulting calcined products at 773 K were investigated by means of powder X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FT-IR), simultaneous thermogravimetric and differential thermal analysis (TG-DTA), X-ray photoelectron spectroscopy (XPS) and temperature programmed reduction (TPR). The results indicate that the nature of interlayer anions involved within the hydrotalcite (HT)-like structure has a larger influence on the thermal stability of LDHs precursors. Calcination of well-crystallized LDHs leads to the formation of mixed metal oxides including CuO, NiO and Cu²⁺-, Ni²⁺- and Cr³⁺-containing spinel phases, the composition distributions of which obtained from LDHs precursors depend on the nature of interlayer anions, thus resulting in the difference of the reducibility of reducible metal species in the calcined LDHs. Moreover, the surface basicity of the calcined material, which is related to the different behaviour of LDHs precursors during the thermal decomposition depending on the interlayer anions, increases progressively following the order of calcined LDHs from sulfate to nitrate and carbonate.     

Leakage current and rectification behavior of Au / TiO2 / GaN junctions with TiO2 interlayer oxygen deposition pressure

Au/TiO₂/GaN junctions with a TiO₂ interlayer were deposited at various oxygen pressures from 5 mTorr to 80 mTorr, and their surface, microstructural, and electrical properties were investigated. Compared with a single 5 μm-Si-doped GaN film on an (0001) Al₂O₃ substrate, the 0.2 μm-Si-doped GaN film with an undoped GaN buffer layer demonstrated improved properties for the application to metal/semiconductor junctions. Atomic force microscope and tunneling electron microscope measurements suggested that the TiO₂ interlayer deposited at room temperature exhibited a distinctive change above the oxygen deposition pressure of 40 mTorr. In contrast to the small rectification ratio of 10¹-10² for Au/GaN junctions, the Au/TiO₂/GaN junctions with the TiO₂ interlayers displayed a large rectification ratio of 10⁶-10⁷ when the oxygen pressure during the deposition of TiO₂ interlayer was maintained at 40 mTorr. These results suggest that the leakage current and the rectification behavior in a metal/oxide/semiconductor junction can be effectively controlled using the oxygen deposition pressure for an oxide interlayer.     

Intermediate temperature solid oxide fuel cell using (La,Sr)(Co,Fe)O3-based cathodes

Anode-supported SOFCs involving LSCF (La_0.6Sr_0.4Co_0.2Fe_0.8O_3−δ)-based cathodes are fabricated utilizing GDC interlayer on 8YSZ electrolyte for intermediate temperatures. The GDC interlayer between the LSCF cathode and YSZ electrolyte is used to prevent formation of insulating phases such as SrZrO₃ or La₂Zr₂O₇. The cell performance with the GDC interlayer was ten times better than the one without GDC at operating temperature of 750 °C. However, the observed power density (370 mW/cm²) was lower than the value reported in the literature. This can be attributed to an imperfect GDC interlayer in the present study. The GDC interlayer was porous and non-uniform, so that adverse interfacial reactions could not be completely prevented. The chemical incompatibility at the interface was evaluated by SEM and EPMA, which explains the dependence of cell performance on sintering temperatures of the GDC interlayer.     

A many-electron perturbation theory study of the hexagonal boron nitride bilayer system*

In this article we explore methods to reduce the computational cost in many-electron wave function expansions including explicit correlation and compact one-electron basis sets for the virtual orbitals. These methods are applied to the calculation of the interlayer binding energy of the h-BN bilayer system. We summarize the optimized interlayer distances as well as their binding energies for various stacking faults on different levels of theory including second-order Møller-Plesset perturbation theory and the random phase approximation. Furthermore, we investigate the asymptotic behavior of the binding energy at large interlayer separation and find that it decays as D^-4 in agreement with theoretical predictions, where D is the interlayer distance.     

Improving the electrical performance of HfInZnO-TFTs by introducing a thin ITO interlayer

We have fabricated hafnium–indium–zinc-oxide (HfInZnO) thin film transistors (TFT) with indium–tin-oxide (ITO) interlayer. Compared with conventional HfInZnO-TFT, the electrical performance and bias stability of HfInZnO-TFTs with ITO interlayer are improved. HfInZnO-TFT with 4-nm-thick ITO interlayer shows a high mobility of 7.2 cm²/V s, a low threshold voltage of 0.13 V and a better bias stability. The performance enhancement is attributed to a decrease in interface trap state and an increase in carrier concentration. It suggests that introducing ITO interlayer at the ALD Al₂O₃/HfInZnO interface is an effective way to improve the electrical performance and bias stability.     

Influence of Au thickness on the optical and electrical properties of transparent and conducting TiO2/Au/TiO2 multilayer films

Au-intermediate TiO₂/Au/TiO₂ (TAT) multilayer films were deposited by RF magnetron sputtering onto glass substrates. Changes in the optical and electrical properties of the films were investigated with respect to the thickness of the Au interlayer.The observed optical and electrical properties were dependent on the thickness of the Au interlayer. The resistivity decreased to 3.3 × 10⁻⁴ Ω cm for TiO₂ films with a 20 nm-thick Au interlayer and the optical transmittance was also influenced by the Au interlayer. Although optical transmittance deteriorated as Au thickness increased, TiO₂ films with a 5 nm-thick Au interlayer showed a relatively high optical transmittance of 80% at a wavelength of 550 nm. In addition, since a TAT film with a 5 nm-thick Au interlayer showed a relatively high work function value, it is an alternative candidate for use as a transparent anode in OLEDs and flat panel displays.     

Ultrasonically-enhanced mechanochemical synthesis of CaAl-layered double hydroxides intercalated by a variety of inorganic anions

CaAl-layered double hydroxides (CaAl-LDHs) were synthesised with various interlayer anions (CO₃²⁻, F⁻, Cl⁻, Br⁻ and I⁻) by mechanochemical pre-treatment followed by ultrasonic irradiation in aqueous media. The parameters of the syntheses (duration of pre-milling and sonication, quality of the aqueous media, temperature) were altered in order to optimise the procedure and to understand the formation of LDH and other secondary products. The products were characterised by X-ray diffractometry (XRD) and scanning electron microscopy (SEM). The optimisation resulted in close-to-phase-pure CaAl-LDHs, not only with carbonate and chloride interlayer anions, but the hard-to-intercalate bromide and iodide as well.     

The effect of interlayer coupling on critical current density in Bi2212 system

The dependences of critical current density J _c on the interlayer coupling strength and magnetic field in Bi2212 crystals were obtained by measuring the magnetic loop of the crystals with different interlayer coupling strengths. It was revealed that J _c decreases with the decrease in the interlayer coupling of the crystals. The relation of J _{c ∞ exp} (−H ^β) was also found in the crystals, and further analysis indicated that it was the result of Zeldov pinning potential model. __________ Translated from Chinese Journal of Low Temperature Physics, 2005, 27(1) (in Chinese)     

Effect of thin aluminum interlayer on growth and microstructure of carbon nanotubes

The aluminum (Al) interlayer with various thicknesses ranging from 0.75 to 6 nm was deposited on silicon (Si) substrates prior to the deposition of ultra-thin iron (Fe) catalyst for the growth of carbon nanotubes. In this paper we report the effect of ultra-thin Al interlayer on the growth of multiwalled carbon nanotubes (MWCNTs). The SEM was used to examine the microstructures of nanotubes. We observed as the Al interlayer thickness increases the height of nanotube decreases. Raman spectra of MWCNT showed typical D and G peaks at ∼1345 cm⁻¹ and ∼1575 cm⁻¹, respectively. The XPS revealed the presence of Al and Fe on the top of CNT surface which were further supported by TEM. The high resolution TEM results also revealed bamboo like CNTs with diameter ∼10–40 nm.     

Improved electrical and thermal properties of nickel silicides by using a NiCo interlayer

We have investigated the effects of a NiCo interlayer on the electrical and thermal properties of nickel silicide as a function of the annealing temperature. For the interlayered samples, 3 nm-thick NiCo(10 at.% Co) films are electron-beam evaporated on Si substrates, on which 27 nm-thick Ni films are deposited without breaking the vacuum. It is shown that all the samples exhibit a distinctive increase in the sheet resistance at temperatures above 900 ^°C. However, the NiCo interlayer sample produces the lowest sheet resistance at 900 ^\circC. X-ray diffraction results show that the Ni only and NiCo interlayer samples produce NiSi and NiSi₂ phases, while NiCo full samples give NiSi and Ni_1−xCo_xSi₂ phases. Scanning electron microscopy results exhibit that for all the samples, the surfaces become degraded with numerous arbitrarily-shaped spots, corresponding to areas uncovered by the silicides. The areal fractions of the silicides for the Ni only, NiCo full, and NiCo interlayer samples are about 57%, 72%, and 81%, respectively. The temperature dependence of the electrical properties of the silicide samples is explained in terms of the formation of resistive phases and the agglomeration of the silicide.     

Role of buried ultra thin interlayer silicide on the growth of Ni film on Si(100) substrate

The presence of a buried, ultra-thin amorphous interlayer in the interface of room temperature deposited Ni film with a crystalline Si(100) substrate has been observed using cross sectional transmission electron microscopy (XTEM). The electron density of the interlayer silicide is found to be 2.02 e/?³ by specular X-ray reflectivity (XRR) measurements. X-ray diffraction (XRD) is used to investigate the growth of deposited Ni film on the buried ultra-thin silicide layer. The Ni film is found to be highly textured in an Ni(111) plane. The enthalpy of formation of the Ni/Si system is calculated using Miedema’s model to explain the role of amorphous interlayer silicide on the growth of textured Ni film. The local temperature of the interlayer silicide is calculated using enthalpy of formation and the average heat capacity of Ni and Si. The local temperature is around 1042 K if the interlayer compound is Ni₃Si and the local temperature is 1389 K if the interlayer compound is Ni₂Si. The surface mobility of the further deposited Ni atoms is enhanced due to the local temperature rise of the amorphous interlayer and produced highly textured Ni film. Received: 2 March 2000 / Accepted: 28 March 2000 / Published online: 11 May 2000     

NMR Studies of Heat-Induced Transitions in Structure and Cation Binding Environments of a Strontium-Saturated Swelling Mica

In this work, we combine ²⁷Al, ²⁹Si, ¹⁹F, and ²³Na magic-angle spinning (MAS) nuclear magnetic resonance (NMR) to characterize the structure and interlayer cation environments in a strontium-saturated member of the swelling mica family before and after a heat-induced collapse of the interlayer space. The ²⁷Al and ²⁹Si MAS NMR demonstrate that the sample consists mainly of swelling mica, though the composition does not match the ideal structural formula. Aluminum NMR also shows that a portion of the aluminum shifts from a tetrahedral to an octahedral coordination environment upon heating. Changes in the ²⁹Si and ¹⁹F NMR after heating are consistent with a structural rearrangement of the tetrahedral sheet to permit the binding of larger cations in the ditrigonal cavity. The ²³Na MAS NMR results indicate the presence of three unique sodium environments before and after heating. The heat-invariant resonance is consistent with the presence of sodium carbonate. The other two resonances are associated with interlayer sodium and reflect a migration of sodium to a dominantly anhydrous ditrigonal binding structure with heating. Quantitative elemental analysis and NMR data presented here suggest strontium is bound deep within the ditrigonal cavity of the collapsed micas. Authors' address: Karl T. Mueller, 104 Chemistry Building, Penn State University, University Park, PA 16802, USA     

铽配合物——蒙脱土新型复合发光材料的插层组装、表征和发光性能

合成了铽的配合物[TbL] (ClO₄)₃(L: 2, 2, 2', 2'-四[N-苯基-N-苄基(乙酰胺)-2-氧甲基]丁醚), 通过离子交换反应将配离子[TbL]³⁺插层组装到蒙脱土(MMT)层板间, 制备出了新型复合发光材料 [TbL]³⁺-MMT．用元素分析、X射线衍射、傅氏变换红外光谱和紫外-可见光谱对材料进行了表征, 对其荧光性质进行了研究．结果表明, 复合发光材料保持了蒙脱土良好的层柱结构特征和[TbL]³⁺离子的笼状结构特征, [TbL]³⁺离子以单层形式分布于蒙脱土层板间．在紫外光激发下, 复合发光材料发出较强的绿色荧光, 其发射光谱与相应配合物的发射光谱相似．与相应纯配合物比较, 复合发光材料单位质量Tb³⁺的相对荧光强度、荧光单色性和光稳定性有显著改善, 其激发波长向可见光区发生明显位移, 说明插层组装对相应配合物的激发波长有一定的调制作用.     

Magnetic hysteresis loops in molecular-based magnetic materials AFeFe(C2O4)3

A molecular-based magnetic material AFe^IIFe^III(C₂O₄)₃ (A = organic cation) with a honeycomb structure is studied. The molecular-based magnet system consists of mixed spin-2 and spin- 5/2 honeycomb lattices with ferrimagnetic interlayer coupling. The magnetization, hysteresis loops and initial susceptibility have been calculated using a numerical method which includes both the longitudinal and transverse fields. We investigated the magnetic reversal of the system and found the existence of triple hysteresis loop patterns, affected by the anisotropy, longitudinal and transverse fields, and interlayer and intralayer exchange.     

Study on characteristics of a double-conductible channel organic thin-films transistor with an ultra-thin hole-blocking layer

The properties of top-contact organic thin-film transistors (TC-OTFTs) using ultra-thin 2, 9-dimethyl-4, 7-diphenyl-1, 10-phenanthroline (BCP) as a hole-blocking interlayer have been improved significantly and a BCP interlayer was inserted into the middle of the pentacene active layer. This paper obtains a fire-new transport mode of an OTFT device with double-conductible channels. The accumulation and transfer of the hole carriers are limited by the BCP interlayer in the vertical region of the channel. A huge amount of carriers is located not only at the interface between pentacene and the gate insulator, but also at the two interfaces of pentacene/BCP interlayer and pentacene/gate insulator, respectively. The results suggest that the BCP interlayer may be useful to adjust the hole accumulation and transfer, and can increase the hole mobility and output current of OTFTs. The TC-OTFTs with a BCP interlayer at V_DS=-20~V showed excellent hole mobility μ_FE and threshold voltage V_TH of 0.58~cm²/(V\cdots) and --4.6~V, respectively.     

Tuning the contact resistance in organic thin-film transistors with an organic-inorganic hybrid interlayer

We demonstrated the tunable contact resistance in pentacene thin film transistor (TFT) by inserting an organic-inorganic hybrid interlayer between Au electrode and pentacene layer. The contact resistance of pentacene-TFT varies with concentration of pentacene-TFT varies with concentration of MoO_x in organic-inorganic hybrid interlayer. MoO_x in organic-inorganic hybrid interlayer. The contact resistance of the device with 55 wt% MoO_x doped pentacene interlayer is about 7.8 times smaller than that of device without interlayer at the gate voltage of −20 V. Comparing the properties of pentacene-TFT without interlayer, the performance of the pentacene-TFT with 55 wt% MoO_x doped pentacene was significantly improved: saturation mobility increased from 0.39 to 0.87 cm²/V s, threshold voltage reduced from −21.3 to −7.2 V, and threshold swing varied from 3.75 to 1.39 V/dec. Our results indicated that the organic-inorganic hybrid interlayer is an effective way to improve the performance of p-channel OTFTs.     

Swelling of K+, Na+ and Ca2+-montmorillonites and hydration of interlayer cations: a molecular dynamics simulation

This paper performs molecular dynamics simulations to investigate the role of the monovalent cations K, Na and the divalent cation Ca on the stability and swelling of montmorillonite. The recently developed CLAYFF force field is used to predict the basal spacing as a function of the water content in the interlayer. The simulations reproduced the swelling pattern of these montmorillonites, suggesting a mechanism of their hydration different (K+ 相似文献   

Raman scattering in layered compound 2H-WS2

Raman scattering of layer-type compound 2H-WS₂ has been studied at room temperature. The first-order Raman peaks are observed at 27.4, 357 and 423 cm^-1. The low-frequency peak at 27.4 cm^-1 is a rigid-layer mode, from which the interlayer shear force constant is estimated. The central force model is applied to the high-frequency phonons. The interlayer shear force constant is much smaller than the intralayer force constants. We also find several peaks due to the second-order processes.     

Suppression of bias stress-induced degradation of pentacene-TFT using MoOx interlayer

The bias stress effect in pentacene thin-film transistors (TFTs) with and without MoO_x interlayer was characterized. The device without MoO_x interlayer showed a large threshold voltage shift of 5.1 V after stressing with a constant gate-source voltage of −40 V for 10000 s, while at the same condition, the device with MoO_x interlayer showed a low threshold voltage shift of 1.9 V. The results can be attributed to the stable interface between MoO_x/pentacene and small contact resistance change for the device with MoO_x/Cu electrode. Pentacene-TFTs with MoO_x interlayer showed a high field-effect mobility of 0.61 cm²/V s and excellent bias stability, which could be a significant step toward the commercialization of OTFT technology.