Fracture force analysis at the interface of Pd and SrTiO3

The objective of this work is to develop an experimental indentation based method to determine the fracture force at the interface of Pd thin films and SrTiO₃ perovskite substrate. This paper reports on the results obtained for indentation into Pd thin films which were deposited in various thicknesses from 20 nm to 200 nm under vacuum and 300 °C substrate temperature by an electron beam physical vapor deposition. Initially, the relation between grain size, elastic module and hardness was considered as a function of film thickness. Thereafter, in developing new method, oscillating indentation was performed with different applied forces and oscillating times in order to measure the critical fracture force in each thickness. The effect of oscillating time on plastically deformed regions surrounding an indentation was schematically explained in conjunction with variation of oscillating time to determine the interfacial properties of the Pd thin film. Furthermore, the accuracy of the critical fracture force was ensured by applied force versus piling up height plot. The method is validated experimentally for the soft thin films over the hard substrate. However, further study would be essential to measure the film adhesion by means of fracture force at the interface.     

Comparative AES and RHEED study of the formation of Pd silicide on clean and oxide covered Si(100) and (111) surfaces

The formation and epitaxial orientation of Pd silicide on clean and native oxide covered Si(100) and (111) surfaces was studied by Auger electron spectroscopy (AES) and reflection high energy electron diffraction (RHEED). Pd was vapor deposited in UHV on to the substrates up to thicknesses of about 6 nm. On clean Si substrates, ultra-thin Pd deposits reacted to form Pd₂Si already at room temperature, as detected by a characteristic splitting of the Si LVV Auger peak. However, a polycrystalline structure with very small crystallite sizes was indicated by diffuse ring patterns in RHEED. When the initial thickness of the Pd deposit exceeded about 3 nm, the diffraction ring pattern of unreacted metal developed. During annealing of room temperature deposits of Pd, the (100) and (111) substrates behaved differently. Larger crystallites formed on Si(100), but the films remained polycrystalline, though textured. On Si(111), virtually perfect epitaxial re-orientation of the silicide was found. When the substrates were initially covered with native oxide of about 2 nm thickness, silicide formation started at about 200°C, resulting in polycrystalline, but strongly textured Pd₂Si. Upon further annealing at temperatures up to 600°C, an additional phase of epitaxially oriented Pd₂Si developed on Si(111), similar to that on clean Si(100). In all experiments, extended annealing at temperatures above 250°C caused segregation of Si to the surface. This was accompanied by the development of an additional peak in the Auger electron spectra at about 313 eV, which we assign to a plasmon loss of δE = 17 eV in the Si overlayer, being excited by Pd Auger electrons of energy 330 eV.     

Characterization of In/Pd and Pd/In/Pd thin films by ellipsometric, XRD and AES methods

In/Pd and Pd/In/Pd thin films were prepared by thermal evaporation on the SiO₂ substrate in a vacuum. The structural and optical properties of the films were investigated by means of X-ray diffractometry (XRD), Auger electron spectroscopy (AES) and spectroscopic ellipsometry (SE). Auger depth profile studies were performed in order to determine the composition of elements in the Pd-In systems. Interdiffusion of metals was detected at room temperature. Optical properties of Pd-In composite layers formed due to the interdiffusion were derived from ellipsometric quantities Ψ and Δ measured in the photon energy range 0.75-6.50 eV at different angles of incidence. The effective optical spectra show absorption peaks dependent on the composition of nonuniform films. The XRD patterns indicated formation of Pd_1−xIn_x intermetallic phases in the samples.     

Praseodymium silicide formation at the Pr2O3/Si interface

The interface and layer structure of praseodymium (Pr) oxide layers grown on Si(0 0 1) from a high-temperature effusion cell are studied using grazing incidence X-ray diffraction. Due to the interdiffusion of praseodymium and silicon atoms, Pr silicide forms in the layers. We find that Pr silicide is the favorable structure under oxygen deficient growth conditions in the Pr oxide layer. To avoid the silicidation, additional oxygen must be supplied. The formation of Pr silicide is suppressed for layers grown with an oxygen partial pressure of 10⁻⁷ mbar at a substrate temperature of 700 °C.     

AES analysis of copper growth on MnO

The growth of Cu film on MnO substrate at room temperature has been investigated using Auger electron spectroscopy. Analysis of the Auger peak intensity as a function of Cu coverage and comparison of the experimental results with predictions of a layer-by-layer growth model, suggest that, at least in the first 16 Å of coverage, the growth of copper takes place in a layer-by-layer mode, simultaneously with the diffusion of some copper in the MnO substrate.     

Control of epitaxial growth at a-Si:H/c-Si heterointerface by the working pressure in PECVD

The epitaxial-Si(epi-Si) growth on the crystalline Si(c-Si) wafer could be tailored by the working pressure in plasmaenhanced chemical vapor deposition(PECVD).It has been systematically confirmed that the epitaxial growth at the hydrogenated amorphous silicon(a-Si:H)/c-Si interface is suppressed at high pressure(hp) and occurs at low pressure(1p).The hp a-Si:H,as a purely amorphous layer,is incorporated in the 1p-epi-Si/c-Si interface.We find that:(i) the epitaxial growth can also occur at a-Si:H coated c-Si wafer as long as this amorphous layer is thin enough;(ii) with the increase of the inserted hp layer thickness,lp epi-Si at the interface is suppressed,and the fraction of a-Si:H in the thin films increases and that of c-Si decreases,corresponding to the increasing minority carrier lifetime of the sample.Not only the epitaxial results,but also the quality of the thin films at hp also surpasses that at lp,leading to the longer minority carrier lifetime of the hp sample than the lp one although they have the same amorphous phase.     

Characterization of the low temperature dopant activation behavior at NiSi/silicon interface formed by implant into silicide method

Process temperature and thermal budget control are very important for high-k dielectric device manufacturing. This work focuses on the characteristics of low temperature activated nickel silicide/silicon (M/S) interface formed by implant into silicide (IIS) method. By combining SIMS, C-V, I-V, and AFM measurements in this work, it provides a clear picture that the high dopant activation ratio can be achieved at low temperature (below 600 °C) by IIS method. From SIMS and C-V measurements, high dopant activation behavior is exhibited, and from I-V measurement, the ohmic contact behavior at the M/S junction is showed. AFM inspection displays that under 2nd RTA 700 °C 30 s no agglomeration occurs. These results suggest that IIS method has the potential to integrate with high-k dielectric due to its low process temperature. It gives an alternate for future device integration.     

Modified magnetism at a buried Co/Pd interface resolved with X-ray standing waves

Soft x-ray standing waves produced by a multilayer interference substrate add depth sensitivity to magnetic circular dichroism to resolve changes in Co magnetism across a 1 nm distance from the Co center to the Co-on-Pd interface of a Pd/Co/Pd trilayer with an in-plane magnetization. Large enhancements of the number of Co d holes, and of in-plane orbital and spin magnetic moments, are strongly localized at a thin, chemically modified interface layer. These results provide new insight into magnetic anisotropy at interfaces, and suggest a broad applicability of such standing wave measurements to interface magnetism studies.     

The formation of the reacted interface for the Si/Cu/Pd system: An ultraviolet photoemission study

Various coverage of Pd were deposited on substrates formed by few layers of Cu on Si (111) face at room temperature. Photoemission results show that the formation of Pd₂ Si-like compound is strongly inhibited by the presence of the Cu/Si interlayer and suggest that for the studied system the heat of formation of the compound is not the only parameter that controls the thickness of the intermixed region.     

Influence of the broken symmetry of defect state distribution at the a-Si:H/c-Si interface on the performance of hetero-junction solar cells

Taking into account the fact that the distribution of defect states at the interface does not have strictly symmetrical shape, we present a simulation study of a-Si:H(n)/c-Si(p) and a-Si:H(p)/c-Si(n) structures with regard to the defect states at the interface, band offsets and doping concentration of the emitter. The presented results suggest for a-Si:H(n)/c-Si(p) solar cells a strong influence of the introduced broken symmetry between acceptor and donor defect states on the open-circuit voltage, whereas the a-Si:H(p)/c-Si(n) structure benefits from inherent favorable band alignment and remains unaffected.     

The Ti/c-Si solid state reaction : II. Additional measurements by means of RBS, XPS and AES

In a previous paper [Appl. Surface Sci. 40 (1990) 333], we have reported the results of a spectroscopic ellipsometric study of the c-Si/Ti solid state reaction. For this purpose we have grown and heated thin (≈10nm) Ti films on a clean c-Si substrate. The investigation revealed that already at moderate temperatures a metastable silicide (≈350°C), probably a monosilicide, and disilicide (≈450°C) are formed. These two metastable transition states, denoted by state I and II respectively, and the final disilicide (state III, ≈700°C) are additionally studied by means of a number of quantitative techniques, such as RBS, XPS and AES. The results reveal a Si-enriched monosilicide state I, Si: Ti = 1.2 and a stoichiometric but Si segregated disilicide state II; surface composition approximately TiSi₃. The finally obtained disilicide (III) has recrystallized into probably large, flat islands embedded in a c-Si matrix.     

Structural analysis of In/Ag, In/Cu and In/Pd thin films on tungsten by ellipsometric, XRD and AES methods

Compositional, microstructural and optical properties of In/Cu, In/Ag and In/Pd thin films evaporated on W substrate in a vacuum were investigated by means of Auger electron spectroscopy, X-ray diffractometry, scanning electron microscopy, and spectroscopic ellipsometry methods. Thicknesses of deposited pure metal layers were adjusted to atomic concentration ratios In:Ag = 1:2, In:Cu = 2:1 and In:Pd = 3:1. Interdiffusion of metals and creation of intermetallic compounds AgIn₂, Ag₂In and CuIn₂were detected at room temperature. Phase transformation and changes in the surface morphology due to annealing of samples at 393 K for 60 min were revealed. Combined investigations indicated a layered structure of In/Ag films. A tendency of island-like structure formation was stronger for In/Cu and In/Pd films. The complex dielectric functions of In/Ag, In/Cu and In/Pd composite layers were determined from spectroellipsometric data.     

XPS and LEED study of Pd and Au growth on alumina/Cu-Al surface

Metal-insulator-metal system was prepared using the single-crystalline Cu-9at.% Al(1 1 1) support. Oxidation of the substrate under well-controlled conditions at elevated temperature leads to the formation of well-ordered aluminium oxide layer. The Pd-Au topmost layer was prepared by a step-by-step deposition of both metals afterwards on the oxide layer at room temperature. Low energy electron diffraction (LEED) measurement did not confirm epitaxial growth of the metal overlayer and gave only a rise of diffuse background after each deposition step. The growth of Pd-Au overlayer exhibited Stranski-Krastanov mode influenced by intermetallic interaction between those metals. No binding energy shifts were visible for the core-level photoelectron peaks of the substrate and the oxide using X-ray photoelectron spectroscopy (XPS). In contrast, the binding energy shifts of Pd 3d and Au 4f photoelectron levels in both directions were observed during all depositions. Bimetallic interactions between the metals as well as size effects are further discussed.     

A RHEED and AFM study of the epitaxial growth of Pd on Pd(001)

The homoepitaxial growth of Pd on a Pd(001) single crystal surface was studied by the RHEED and AFM methods. The values of surface width obtained by both the methods were compared to each other. Generally, we observed that at the room temperature and at the deposition rate of 1nm/min the surface roughness increases with the mass thickness of the deposited layer. Up to the mass thickness of 10nm the values of surface width ₀ calculated on the basis of measurements carried out by the RHEED and AFM methods are in relatively good mutual agreement. If the values of the mass thickness are higher than 10nm, surface polycrystalline phase develops.     

Tuning the electrons at the LaAlO_3/SrTiO_3 interface: From growth to beyond growth

Recently, the quasi-two-dimensional electron gas （q2DEG） confined at the interface between LaAlO3 and SrTiO3 has attracted significant attention. In this paper, we briefly review experimental methods that have been used to tune the carrier density and mobility of this q2DEG. These methods can be classified into two categories： growth-related tuning （i.e. substrate, growth temperature, oxygen pressure, post-annealing, LaAlO3 thickness, stoichiometry, and capping layers） and post-growth tuning （i.e. electrostatic field gating, conductive atomic force microscopy and surface adsorbates）. Taken together, these methods enable the broad tuning of the electronic properties of this interface.     

Initial growth at the F16CoPc/Ag(111) interface

An extended, combined (STM/STS)–(UPS/XPS) study was carried out towards a comprehensive understanding of the mechanism responsible for the F₁₆CoPc/Ag(111) interface formation. The evolution of the morphology and the electronic properties at the organic/metal interface is investigated for the early-stage growth of the ultrathin molecular film. Template-guided molecular structures are formed via a strong molecule–substrate interaction which leads to the formation of a new adsorption-induced interface state close to the Fermi energy (E_F). With increasing the thickness the molecular coupling to the metal surface states becomes less important while the more dominant molecule–molecule interaction governs the second layer formation. The quenching of the interface state upon increasing the molecular thickness, together with the changes observed in the Co 2p and F 1s core levels, is explained based on a charge transfer at the interface and a corresponding charge redistribution within the molecular ligand. A detailed “picture” of the energy level alignment close to E_F is achieved by correlating the high resolution UPS and highly localized STS data.     

CEMS interface study of Fe(100)/Pd film structures

The magnetic hyperfine fieldsB _hf near the interface in epitaxial Fe(100)/Pd thin film structures were analyzed using in-situ⁵⁷Fe conversion electron Mössbauer spectroscopy.B _hf is enhanced by about 12% in the 2nd Fe monolayer and approaches the Fe bulk value after a few oscillations within 8–10 Fe monolayers. This oscillating behavior can be described by a superposition of an exponential short-range and an RKKY-like long-range exchange interaction.     

ICP-AES法测定Pd/Al_2O_3中钯的干扰问题

本文研究了用 ICP- AES法测定 Pd/Al2 O3催化剂中钯所存在的干扰问题。考察了基体及所用试剂对钯测定的影响 ,发现氧化铝基体、硫酸等对钯的测定均有负干扰 ,提出采用基体匹配法测定 Pd/Al2 O3中的钯含量。方法回收率在 96%以上 ,9次测定相对标准偏差小于 3%