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1.
本工作利用透射电子显微术研究了Pd-Si薄膜固相反应的初始生成相及生成相Pd2Si与(111)取向Si衬底的取向关系随Pd膜厚度、退火温度等因素的变化规律。实验结果表明:在衬底保持室温的条件下,Pd沉积到Si(111)上时也能够生成一层外延的Pd2Si,其厚度足以在常规的选区电子衍射中产生明显的信号。在170℃退火时,Pd-Si反应即可持续到生成200nm厚的外延的Pd2Si。在Pd膜厚度为400nm的条件下,Pd2Si与Si(111)衬底的取向关系为[0001](Pd2Si)轴织构。
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2.
A system Pd (deposit)-Si (substrate) has been studied by LEED and AES. Pd2Si formed on Si(111) became epitaxial after a short time of annealing at a temperature between 300 and 700°C, while the Pd2Si formed on Si(100) did not, in both cases the surfaces of the Pd2Si being covered with a very thin Si layer. A sequence of superstructures (3√3 × 3√3), (1 × 1), and (2√3 × 2√3) was observed successively in Pd/Si(111) as the annealing temperature was increased. A (√3 × √3) structure was obtained by sputtering the 3√3 surface slightly. It was found that the √3 structure corresponds to Pd2Si(0001)-(1 × 1) grown epitaxially on Si(111), and that the 3√3 structure comes from the thin Si layer accumulated over the silicide surface, while the 2√3 and 1 structures arise from a submonolayer of Pd adsorbed on Si(111). Superstructures observed on a Pd/Si(100) system are also studied. 相似文献
3.
《Applied Surface Science》1987,29(4):418-426
We have measured the evolution of a palladium/silicon interface under consecutive annealing periods, performed at 200°C in UHV conditions. The interface was analyzed by means of Auger electron spectroscopy combined with factor analysis applied in a sequential way. We found that silicide appears only after annealing and evolves until all the palladium is consumed. A silicon compound different from silicide, identified as PdxSi with x<2 is found at the interface Pd/Si and Pd2Si/Si, before and after annealing respectively. 相似文献
4.
D. Levy A. Grob J. J. Grob J. P. Ponpon 《Applied Physics A: Materials Science & Processing》1984,35(3):141-144
The formation of palladium silicide Pd2Si by rapid thermal annealing of Pd layers on silicon has been studied as a function of annealing time (1–60s) in the temperature range 350–500 °C. It is shown that the results found for conventional furnace annealing (long duration, low temperature) can be extrapolated for rapid thermal annealing (shorter time, higher temperature) when taking into account the exact time dependence of the short temperature cycle. The growth rate is essentially diffusion limited and the activation energy is close to 1.1±0.1 eV. Silicide resistivity of about 30–40 cm was obtained for 200–400 nm thick Pd2Si layers formed at 400 °C for a few seconds. 相似文献
5.
V. V. Balashev V. V. Korobtsov T. A. Pisarenko E. A. Chusovitin K. N. Galkin 《Physics of the Solid State》2010,52(2):397-403
Ultrathin films of iron silicide have been grown by high-temperature annealing of 0.14-to O.5O-nm-thick Fe films deposited
on the Si(001) surface at room temperature. It has been found that annealing leads to the formation of nanoislands of iron
silicide on the surface, so that their type depends on the thickness of the Fe film. High-energy electron diffraction and
atomic force microscopy measurements have revealed that the deposition of Fe films less than 0.32 nm thick on the Si(001)
surface stimulates epitaxial growth of both three-dimensional β-FeSi2 and two-dimensional γ-FeSi2 islands. It has been found that, for Fe coverages of more than 0.32 nm thick, a complete transition to solide phase epitaxy
is observed only for two-dimensional β-FeSi2 islands. The effect of prolonged annealing at 850°C on the morphology of the surface of the iron silicide film has been investigated. 相似文献
6.
M. V. Gomoyunova I. I. Pronin D. A. Valdaitsev N. S. Faradzhev 《Physics of the Solid State》2001,43(3):569-573
A study of the mechanism governing the initial stages in silicide formation under deposition of 1–10 monolayers of cobalt on a heated Si(111) 7×7 crystal is reported. The structural data were obtained by an original method of diffraction of inelastically scattered medium-energy electrons, which maps the atomic structure of surface layers in real space. The elemental composition of the near-surface region to be analyzed was investigated by Auger electron spectroscopy. Reactive epitaxy is shown to stimulate epitaxial growth of a B-oriented CoSi2(111) film on Si(111). In the initial stages of cobalt deposition (1–3 monolayers), the growth proceeds through island formation. The near-surface layer of a CoSi2(111) film about 30 Å thick does not differ in elemental composition from the bulk cobalt disilicide, and the film terminates in a Si-Co-Si monolayer triad. 相似文献
7.
0.95 Ti0.05)O3 (PZT 95/5) thin films of perovskite structure were prepared on various substrates by the radio-frequency magnetron sputtering
with a stoichiometric ceramic target. The crystal structure of the films showed a strong dependency on the crystal structure
of the substrates. After conventional-furnace annealing at 750 °C, crack-free and transparent epitaxial PZT 95/5 films were
successfully obtained on SrTiO3(100) substrates, and highly oriented films on LaAlO3(012). The films on r-sapphire exhibit slightly preferred orientation along both the (040) and (122) axes of the orthorhombic
PZT 95/5 phase. The films on YSZ(100) consist principally of the perovskite PZT 95/5 phase with random orientation with a small
portion of unknown phase. However, the formation of the perovskite PZT 95/5 phase was not observed in the films on Si(110)
or (111)Pt-coated Si substrates. The crystallization of the perovskite PZT 95/5 on these substrates could be improved by rapid
thermal annealing (RTA). Single perovskite phase was obtained in the films on (111)Pt/Si which had RTA at 750 °C for 1 min.
No tangible loss of Pb from the films occurred during either the sputtering or annealing.
Received: 17 April 1997/Accepted: 18 November 1997 相似文献
8.
Effect of Pd deposition on a clean Si(111) surface was studied by ELS and AES methods for submonolayer [1 ML = 7.8 × 1014atomscm-2forSi(111)] to several tens of monolayers. ELS spectra showed that the electronic nature of Pd-Si bonding for ? 1 ML of Pd coverage is different from Pd2Si formed for ? 3 ML. Namely, it was shown that some critical thickness for Pd on Si(111) exist for inducing interfacial intermixing reaction at room temperature. 相似文献
9.
I. A. Yakovlev S. N. Varnakov B. A. Belyaev S. M. Zharkov M. S. Molokeev I. A. Tarasov S. G. Ovchinnikov 《JETP Letters》2014,99(9):527-530
The results of the structural and magnetic studies of the epitaxial structure prepared during the simultaneous evaporation from two iron and silicon sources on an atomically pure Si(111)7 × 7 surface at a substrate temperature of 150°C have been presented. The epitaxial structure has been identified as a single-crystal Fe3Si silicide film with the orientation Si[111]‖Fe3Si[111] using methods of the X-ray structural analysis, transmission electron microscopy, and reflection high-energy electron diffraction. It has been established that the epitaxial Fe3Si film at room temperature has magnetic uniaxial anisotropy (H a = 26 Oe) and a relatively narrow uniform ferromagnetic resonance line (ΔH = 11.57 Oe) measured at a pump frequency of 2.274 GHz. 相似文献
10.
Pd-induced surface structures on Si(1 1 3) have been studied by scanning tunneling microscopy (STM) and X-ray photoelectron spectroscopy (XPS). In the initial process of the Pd adsorption below 0.10 ML, Pd silicide (Pd2Si) clusters are observed to form randomly on the surface. By increasing the Pd coverage to 0.10 ML, the clusters cover the entire surface, and an amorphous layer is formed. After annealing the Si(1 1 3)-Pd surface at 600 °C, various types of islands and chain protrusions appears. The agglomeration, coalescence and crystallization of these islands are observed by using high temperature (HT-) STM. It is also found by XPS that the islands correspond to Pd2Si structure. On the basis of these results, evolution of Pd-induced structures at high temperatures is in detail discussed. 相似文献
11.
M. A. Harith J. P. Zhang S. U. Campisano H. -J. Klaar 《Applied Physics A: Materials Science & Processing》1987,42(1):35-39
The kinetics of Ni2Si growth from pure Ni and from Ni0.93V0.07 films on (111) and (100) silicon has been studied by the combination of He+ backscattering, x-ray diffraction, Auger electron spectroscopy (AES) and transmission electron microscopy (TEM) techniques. The activation energies are 1.5 and 1.0 eV for pure Ni and Ni(V) films, respectively while the pre-exponential factors in Ni(V) are 4–5 orders of magnitude smaller than in the pure Ni case. The variations in the measured rates are related to the different grain size of the growing suicide layers. The vanadium is rejected from the silicide layer and piles up at the metalsilicide interface. 相似文献
12.
《Applied Surface Science》1986,27(2):143-150
Ultrathin nickel layers (0–40 Å) on Si(111) were characterized using reflection high energy electron diffraction (RHEED) in conjunction with high-resolution Rutherford backscattering spectrometry (RBS). RBS shows that Ni, when deposited on Si(111) at 300 K, reacts with the Si to form clusters with an average composition close to Ni2Si, until the clusters coalesce into a continuous layer. RHEED measurements show that the microstructure of this layer also matches the Ni2Si composition: the film consists mainly of very fine-grained Ni2Si crystallites (∼ 15 Å grain size) which are randomly oriented. Additional Ni deposition results in the accumulation of an unreacted fine-grained Ni layer on top of the silicide film. 相似文献
13.
Oleksandr Romanyuk Keita Kataoka Fumihiko Matsui Ken Hattori Hiroshi Daimon 《Czechoslovak Journal of Physics》2006,56(3):267-276
The atomic structure of thin iron silicide film, grown epitaxially on the Si(111) surface, has been analyzed by means of the
three-dimensional RHEED Patterson function analysis. The iron-silicide-terminated surface with (2 × 2) periodicity has been
prepared by a solid-phase epitaxy method. 2 ML of Fe were deposited on the Si(111)-(7 × 7) surface and annealed at 500°C.
Three-dimensional Patterson function was calculated from series of φ-scanned RHEED intensity distributions converted to the k-space. The resulting model of γ-FeSi2 structure consists of two silicide layers faulted to each other with three relaxed Si adatoms above the H3 site. 相似文献
14.
H. Roux andN. Boutaoui
M. Tholomier
《Surface science》1992,260(1-3):113-115The quantitative analysis of the evolution of Pd and Si N(E) Auger peak amplitudes has been carried out as a function of Pd concentration on a Si(111) surface. Modelization of these evolutions has allowed us to conclude that the formation of the Pd2Si silicide occurs from the beginning of Pd adsorption even at room temperature. 相似文献
15.
A. S. Rysbaev A. K. Tashatov Sh. X. Dzhuraev Zh. B. Khuzhaniyazov G. Arzikulov S. S. Nasriddinov 《Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques》2011,5(6):1193-1196
Highly perfect epitaxial heterostructure CoSi2 films have been grown on the surface of Si (111) and Si (100) single crystals by the method of molecular-beam epitaxy. The
optimal regimes of the film growth with different thicknesses have been determined. It has been shown that short-term annealing
of epitaxial films at T = 900–950 K leads to the formation of new CoSi2/Si(111)-2 × 2 and CoSi2/Si(100)−2 × 4 superstructures. 相似文献
16.
Epitaxial Gd2O3 thin films were successfully grown on Si (001) substrates using a two-step approach by laser molecular-beam epitaxy. At the first step, a ~0.8 nm thin layer was deposited at the temperature of 200 °C as the buffer layer. Then the substrate temperature was increased to 650 °C and in situ annealing for 5 min, and a second Gd2O3 layer with a desired thickness was deposited. The whole growth process is monitored by in situ reflection high-energy electron diffraction (RHEED). In situ RHEED analysis of the growing film has revealed that the first Gd2O3 layer deposition and in situ annealing are the critical processes for the epitaxial growth of Gd2O3 film. The Gd2O3 film has a monoclinic phase characterized by X-ray diffraction. The high-resolution transmission electron microscopy image showed all the Gd2O3 layers have a little bending because of the stress. In addition, a 5–6 nm amorphous interfacial layer between the Gd2O3 film and Si substrate is due to the in situ high temperature annealing for a long time. The successful Gd2O3/Si epitaxial growth predicted a possibility to develop the new functional microelectronics devices. 相似文献
17.
G. Petõ G. Molnár L. Dózsa Z.E. Horváth Zs.J. Horváth E. Zsoldos C.A. Dimitriadis L. Papadimitriou 《Applied Physics A: Materials Science & Processing》2005,81(5):975-980
Epitaxial and polycrystalline orthorhombic GdSi2 films were grown on Si(100) substrates by solid phase reaction between Si and Gd films at different thicknesses of the Gd film . The most important property of these GdSi2/Si interfaces was defect formation. This was investigated by studying the properties of the Schottky barriers by means of current voltage and capacitance–voltage characteristics, deep level transient spectroscopy by double crystal X-ray diffractometry, and transmission electron microscopy. Epitaxial growth of the silicide layer ensured a relatively low interface defect density (about 1010 cm-2), while the non-epitaxial growth induced defects of a much higher density (about 1012 cm-2). The defects generated during the silicide formation are located within a depth of about 10 nm from the GdSi2/Si interface. PACS 68.55.-a; 73.40.-c; 81.15-zThis revised version was published in March 2005. References 10-17 were added in the online version (pdf file). 相似文献
18.
F.D. Auret 《Surface science》1984,140(1):L225-L228
The Auger inverse sensitivity factors αi for In and Sb on a (111) In surface of an InSb crystal mounted on a 30° sample holder were determined as 0.56 ± 0.04 and 0.67 ± 0.05, respectively, by Auger Electron Spectroscopy (AES). These values were referenced to the clean Si 92 eV peak and differ significantly from those obtained for In and Sb when in their elemental form. Angular dependent variations in the αi values were observed upon rotation of the sample about its normal. 相似文献
19.
Role of buried ultra thin interlayer silicide on the growth of Ni film on Si(100) substrate 总被引:1,自引:0,他引:1
D.K. Sarkar M. Falke H. Giesler S. Teichert G. Beddies H.-J. Hinneberg 《Applied Physics A: Materials Science & Processing》2000,70(6):681-684
The presence of a buried, ultra-thin amorphous interlayer in the interface of room temperature deposited Ni film with a crystalline
Si(100) substrate has been observed using cross sectional transmission electron microscopy (XTEM). The electron density of
the interlayer silicide is found to be 2.02 e/?3 by specular X-ray reflectivity (XRR) measurements. X-ray diffraction (XRD) is used to investigate the growth of deposited
Ni film on the buried ultra-thin silicide layer. The Ni film is found to be highly textured in an Ni(111) plane. The enthalpy
of formation of the Ni/Si system is calculated using Miedema’s model to explain the role of amorphous interlayer silicide
on the growth of textured Ni film. The local temperature of the interlayer silicide is calculated using enthalpy of formation
and the average heat capacity of Ni and Si. The local temperature is around 1042 K if the interlayer compound is Ni3Si and the local temperature is 1389 K if the interlayer compound is Ni2Si. The surface mobility of the further deposited Ni atoms is enhanced due to the local temperature rise of the amorphous
interlayer and produced highly textured Ni film.
Received: 2 March 2000 / Accepted: 28 March 2000 / Published online: 11 May 2000 相似文献
20.
The system Au/Si(100) has been studied using LEED and AES. Au films grow as Au(111) | Si(100) having six azimuthally rotated orientations at low deposition temperatures below 50°C after the formation of intermediate gold suicide layers. Crystalline gold silicide thin layers are formed on the Au(111) film after heat treatment at 100–400°C. Two types of suicide LEED pattern observed seem to have no correlation with crystallographic data reported on quenched alloy films. Heat treatment over 450°C leads to agglomeration of the film, producing a series of Au-induced superstructures. Heat treatment of the Au film over 1000°C regenerates the clean Si surface accompanied with many etch pits. 相似文献