氩气介质阻挡放电不同放电模式的电学特性研究

采用水电极介质阻挡放电装置，在气压为40kPa的氩气中实现了弥散、流光和斑图三种不同 模式的放电，并对其光电特性进行测量.通过测量测试电容上的电压，从而将气隙电压计算 出来，发现随外加电压增加，放电起始时刻不断提前，放电占空比增加；对应放电时刻，气 隙电压减小、输运电荷突增，使得气隙电压和电量波形都远远偏离正弦.气隙电压与输运电 荷成非线性关系.给出了外加电压零点对应的气隙电压随外加电压峰值的变化关系.讨论了壁 电荷在放电中的作用及对气隙电压和电量波形的影响. 关键词： 介质阻挡放电 气隙电压 自组织斑图 输运电荷     

电偶极子位于均匀介质球中时球外电场的研究

采用分离变量法求解了电偶极子位于均匀介质球中时复连通域的拉普拉斯方程和泊松方程,求出了球内外两种不同介质的电势分布和球面上的极化电荷分布;通过求解二阶非线性微分方程得到了球外的电场线函数;利用计算软件Math-ematica 5.0,作出了相应的相互正交的等势线簇图形和电场线簇图形,并且进行了必要的讨论.     

氩气放电中四边形发光斑图形成过程研究

采用介质阻挡放电装置,在不同的边界条件下，在大气压氩气放电中观察到了稳定的四边形发光斑图. 采用光电倍增管，在纳秒时间尺度测量了四边形斑图的时空动力学, 发现它是由两套具有时间反演行为的四边形子结构交替振荡并相互嵌套而成的. 讨论了介质表面的壁电荷分布对发光斑图的形成及其时空动力学行为的影响. 关键词： 介质阻挡放电 四边形斑图 壁电荷     

介质窗口材料对高功率微波传输特性的影响

运用光学方法,分析平面波通过无限大介质平板的传输特性,进而分析单层介质窗口的引入对微波传输性能的影响。在S波段微波源上对聚四氟乙烯材料进行了真空环境下的微波放电击穿实验,通过长时间的表面放电,在聚四氟乙烯材料表面出现电痕和电树枝。在100 ns脉冲宽度下,未发生大面积表面放电前,通过光学照相,在介质表面观测到局部放电现象,认为局部放电仍能导致材料表面破坏。作为对比,进行了聚苯乙烯材料的电老化实验,实验结果表明聚苯乙烯材料具有良好的耐电痕、耐电树枝老化特性。     

以能带理论诠释直流聚乙烯绝缘中空间电荷的形成和抑制机理

高压直流塑料交联聚乙烯电缆的研发难点是消除其中的空间电荷效应. 目前, 国内外学者普遍通过添加纳米粒子在聚乙烯体内形成深陷阱捕获电荷的机理来抑制电荷积聚, 但此抑制机理违背了电场的基本理论. 以能带理论全面阐述聚合物介质中空间电荷的形成和抑制机理, 从一级陷阱模型出发, 应用电荷入陷和脱陷动力方程, 推导了聚合物介质中空间电荷的形成过程. 在聚合物介质中引入深陷阱后, 介质Fermi能级位移, 电极与介质之间界面接触由Ohm接触转变为阻塞接触. 考虑到无定形相中大量的陷阱密度, 电荷耗尽区宽度小于100 Å, 电极与介质之间的界面对电子变得透明, 形成中性接触, 在电压作用下, 这种聚乙烯介质中不再可能形成空间电荷. 最后, 在纯聚乙烯和纳米改性后含有深陷阱的聚乙烯两种试样上, 分别测量了电导与电场强度的关系和空间电荷分布曲线, 实验结果符合理论推导. 关键词： 直流绝缘 能带理论 空间电荷 抑制机理     

介质窗口材料对高功率微波传输特性的影响

运用光学方法,分析平面波通过无限大介质平板的传输特性,进而分析单层介质窗口的引入对微波传输性能的影响。在S波段微波源上对聚四氟乙烯材料进行了真空环境下的微波放电击穿实验,通过长时间的表面放电,在聚四氟乙烯材料表面出现电痕和电树枝。在100 ns脉冲宽度下,未发生大面积表面放电前,通过光学照相,在介质表面观测到局部放电现象,认为局部放电仍能导致材料表面破坏。作为对比,进行了聚苯乙烯材料的电老化实验,实验结果表明聚苯乙烯材料具有良好的耐电痕、耐电树枝老化特性。     

加压水介质耐μs级高电压击穿实验研究

 采用水介质同轴电极实验装置,开展了μs级充电加压水介质击穿实验研究,并对实验结果进行了分析和讨论,结果表明：在水介质正电极击穿类型的实验中,常压下水介质击穿场强与Martin公式吻合。加压水介质击穿场强随静压的增加而增加,其场强增幅与Mirza定性理论场强增幅的相对差别在5%以内。根据实验结果推导出了更为准确的水介质击穿场强随静压变化的关系式。对水介质加压,将压缩电极表面气泡,减少气泡数目,从而可以提高水介质耐高电压击穿能力。     

A new structure and its analytical model for the vertical interface electric field of a partial-SOI high voltage device

A new partial-SOI (PSOI) high voltage device structure called a CI PSOI (charge island PSOI) is proposed for the first time in this paper. The device is characterized by a charge island layer on the interface of the top silicon layer and the dielectric buried layer in which a series of equidistant high concentration n⁺-regions is inserted. Inversion holes resulting from the vertical electric field are located in the spacing between two neighbouring n⁺-regions on the interface by the force with ionized donors in the undepleted n⁺-regions, and therefore effectively enhance the electric field of the dielectric buried layer (E_I) and increase the breakdown voltage (BV), thereby alleviating the self-heating effect (SHE) by the silicon window under the source. An analytical model of the vertical interface electric field for the CI PSOI is presented and the analytical results are in good agreement with the 2D simulation results. The BV and E_I of the CI PSOI LDMOS increase to 631~V and 584~V/μ m from 246~V and 85.8~V/μ m for the conventional PSOI with a lower SHE, respectively. The effects of the structure parameters on the device characteristics are analysed for the proposed device in detail.     

加压水介质耐μs级高电压击穿实验研究

采用水介质同轴电极实验装置,开展了μs级充电加压水介质击穿实验研究,并对实验结果进行了分析和讨论,结果表明：在水介质正电极击穿类型的实验中,常压下水介质击穿场强与Martin公式吻合。加压水介质击穿场强随静压的增加而增加,其场强增幅与Mirza定性理论场强增幅的相对差别在5%以内。根据实验结果推导出了更为准确的水介质击穿场强随静压变化的关系式。对水介质加压,将压缩电极表面气泡,减少气泡数目,从而可以提高水介质耐高电压击穿能力。     

大气压介质阻挡辉光放电中放电电流的测量与分析

介质阻挡放电产生的低温等离子体具有广泛的应用前景而成为研究热点。文章利用平行平板介质阻挡放电装置,在流动的氦气中实现了大气压均匀辉光放电,得到了大气压下的均匀等离子体。利用电学方法将放电电流从总电流中分离出来,从而得到了辉光放电的放电电流。通过分析放电电流、外加电压、气隙上电压以及壁电荷电量之间的相互关系,可以研究气体放电过程中壁电荷积累的微观动力学行为。实验结果表明壁电荷主要是在放电电流脉冲持续期间积累的,但电流脉冲结束后,由于气隙电压没有改变极性,壁电荷还会逐渐积累,气隙电压改变极性后,壁电荷量随时间减小。这些结果对壁电荷在介质阻挡辉光放电中作用的深入研究和大气压介质阻挡辉光放电的工业应用具有重要意义。     

A model for engineering the electrical conductance at nanoscale

With the emergence of nanoelectronics faster and denser circuits are being produced, this largely because the aggressive scaling to the nanometer range of the insulating film used as dielectric. Moreover, enhancements of the electrical conductivity of nanofiller based composites can be achieved by the incorporation of conductive nanofillers into polymer matrix. In such systems electron wave-function penetration into the dielectric is important as it leads to undesired or desired leakage currents by tunneling respectively. Therefore, a proper design of the electrical conductance in such structures becomes important in order to control accurately their performance. In this research, a model for engineering the electrical conductance of resistors at nanoscale is presented. The conductance at infinitesimal bias of nanoresistors is modeled within the framework of Landauer's tunneling which results in an exponential integral function for the total electrical conductance. Model takes the effects of azimuthal and inclination angles between nanocontacts into account, as well as the effect of the thickness of the dielectric layer. The model also unveils a U-shaped behavior of the electrical conductance as a function of the azimuthal angle between nanocontacts. As a result, a minimal electrical conductance is predicted when the azimuthal angle reaches 90°.     

An electron paramagnetic resonance study of LDPE irradiated with high-energy electron beam

Cross-linking of the polyethylene was performed with a high-energy electron beam. Electron paramagnetic resonance spectroscopy was used to study the lifetime of unpaired electron in the irradiated samples. Time-dependent electrical parameters are investigated for the cross-linked low-density polyethylene. Both dielectric constant and dielectric strength almost remained unchanged, but for short times, the volume resistivity and loss factor increased and decreased, respectively. It is predicted that for lifetime longer than 48 h, the electrical parameters were constant. It is believed that the variation of some electrical properties during time is due to the effects of trapped electrons.     

Dielectric and magnetic properties of(Zn,Co) co-doped SnO_2 nanoparticles

Polycrystalline samples of(Zn, Co) co-doped SnO2 nanoparticles were prepared using a co-precipitation method. The influence of(Zn, Co) co-doping on electrical, dielectric, and magnetic properties was studied. All of the(Zn, Co) co-doped SnO2 powder samples have the same tetragonal structure of SnO2. A decrease in the dielectric constant was observed with the increase of Co doping concentration. It was found that the dielectric constant and dielectric loss values decrease, while AC electrical conductivity increases with doping concentration and frequency. Magnetization measurements revealed that the Co doping SnO2 samples exhibits room temperature ferromagnetism. Our results illustrate that(Zn, Co) co-doped SnO2 nanoparticles have an excellent dielectric, magnetic properties, and high electrical conductivity than those reported previously, indicating that these(Zn, Co) co-doped SnO2 materials can be used in the field of the ultrahigh dielectric material, high frequency device, and spintronics.     

Impedance as a characteristic of relaxation polarization

The electrical characteristics of a dielectric material that can be used to determine the parameters of relaxation polarization arising in a dielectric and the influence on these characteristics of the steady leakage electrical conductivity are discussed. For weak relaxation processes at high electrical conductivities, the imaginary part of impedance can be used as such a characteristic. Extrema in the impedance frequency dependence are observed at any conductivity. However, the frequency dependence of the imaginary part of impedance contains two maxima whose frequency positions depend not only on the relaxation time but on other characteristics of the dielectric as well. In addition, the temperature shifts of the extrema of these curves depend not only on the activation energy of the relaxation process but on the activation energy of the electrical conductivity as well.     

Detailed electrical measurements on sago starch biopolymer solid electrolyte

The biopolymer solid electrolyte has been synthesized and characterized. Potassium iodide (KI) has been added in polymer matrix to develop solid polymer electrolyte. Relationships between electrical, ionic transport parameter and mechanism have been studied in detail. Impedance spectroscopy reveals the detailed electrical studies and ion transport mechanism. The ion dissociation factor is compared with a measured dielectric constant at a fixed frequency. The dielectric data are calculated which support the ionic conductivity data.     

An impedance spectroscopy study in poly(butylene adipate) ionomers

Poly(butylenes adipate) ionomers (PBAi) were synthesized using dimethyl 5‐sulfoisophthalate sodium salt (DMSI) up to 5 mol% of diacid monomer. We have investigated electrical and dielectric properties of the ionomers to evaluate alternating current (AC) parameters such as impedance, conductance, dielectric constant, admittance, susceptance, dielectric loss, and resistance by an impedance spectroscopy. It is seen that the ionic conductances of the ionomers increase with increasing content of DMSI. The AC conductance for the ionomers was found to vary as ω^s with the index s ≥ 1. A decrease in the relative dielectric constant of the ionomers is observed with the increase in the ionic content. The electrical relaxation in the dielectric spectra of the ionomers was not observed due to the orientation polarization of the dipoles. It is also observed that the tangent loss increases with the increase in the ionic content.     

介质阻挡放电中的局域态六边形结构

在氩气介质阻挡放电中得到了稳定的局域态六边形结构，并对其进行了时空动力学的测量.发现位于中心的放电丝的放电时刻总是领先，相邻两次放电的时间间隔表现出长短交替的周期性.利用壁电荷放电模型对上述结果进行了分析，表明微放电丝在放电过程中不仅受自身场的作用，还受到周围其他微放电丝的影响. 关键词： 介质阻挡放电 壁电荷 自组织 局域态结构     

Electrical and dielectric characterization of Au/ZnO/n-Si device depending frequency and voltage

Au/Zn O/n-type Si device is obtained using atomic layer deposition(ALD) for Zn O layer, and some main electrical parameters are investigated, such as surface/interface state(Nss), barrier height(Φb), series resistance(Rs), donor concentration(Nd), and dielectric characterization depending on frequency or voltage. These parameters are acquired by use of impedance spectroscopy measurements at frequencies ranging from 10 k Hz to 1 MHz and the direct current(DC) bias voltages in a range from-2 V to +2 V at room temperature are used. The main electrical parameters and dielectric parameters,such as dielectric constant(ε"), dielectric loss(ε"), loss tangent(tan δ), the real and imaginary parts of electric modulus(M and M), and alternating current(AC) electrical conductivity(σ) are affected by changing voltage and frequency. The characterizations show that some main electrical parameters usually decrease with increasing frequency because charge carriers at surface states have not enough time to fallow an external AC signal at high frequencies, and all dielectric parameters strongly depend on the voltage and frequency especially in the depletion and accumulation regions. Consequently, it can be concluded that interfacial polarization and interface charges can easily follow AC signal at low frequencies.     

Frequency and voltage-dependent electrical and dielectric properties of Al/Co-doped PVA/p-Si structures at room temperature

In order to investigate of cobalt-doped interracial polyvinyl alcohol （PVA） layer and interface trap （Dit） effects, A1/p- Si Schottky barrier diodes （SBDs） are fabricated, and their electrical and dielectric properties are investigated at room temperature. The forward and reverse admittance measurements are carded out in the frequency and voltage ranges of 30 kHz-300 kHz and -5 V-6 V, respectively. C-V or er-V plots exhibit two distinct peaks corresponding to inversion and accumulation regions. The first peak is attributed to the existence of Dit, the other to the series resistance （Rs）, and interfacial layer. Both the real and imaginary parts of dielectric constant （er and err） and electric modulus （Mr and Mrr）, loss tangent （tan~）, and AC electrical conductivity （aac） are investigated, each as a function of frequency and applied bias voltage. Each of the M~ versus V and Mrr versus V plots shows a peak and the magnitude of peak increases with the increasing of frequency. Especially due to the Dit and interfacial PVA layer, both capacitance （C） and conductance （G/w） values are strongly affected, which consequently contributes to deviation from both the electrical and dielectric properties of A1/Co-doped PVA/p-Si （MPS） type SBD. In addition, the voltage-dependent profile of Dit is obtained from the low-high frequency capacitance （CLF-CHF） method.     

Ab Initio SCF Calculations Relating to the Cls Chemical Shifts for Some Alkanes

Ab initio calculatios have been made for a series of simple alkanes and the atomic charges have been estimated in two ways, using the Mulliken population analysis and also using an analysis due to Karlström where the charges are fitted to describe the electrical moments derived from the SCF wave function. Also the orbital energies were calculated. The results were used to interpret experimental data of the carbon core electron binding energies. It is found that the Karlström technique is best suited to describe the XPS data.