Characteristics of Cladding-Pumped Short Er3+/Yb3+ Codoped Single Mode Phosphate Glass Fibre

We experimentally investigate the laser characteristics of a series of short pieces of newly-developed Er³⁺/Yb³⁺ codoped single mode phosphate glass fibres via the cladding pump of a 976nm multimode laser diode. A stablecontinuous-wave single transverse mode laser with over 85mW at 1553nm is generated from a 5.5-cm-long active fibre. Single mode laser output power per unit length is up to 15mW/cm. Moreover, the slope efficiency is 11.8% when the pump power is below 940mW and the 3dB linewidth is 0.06nm at the maximum pump power. The numerical simulation results show that the laser emission slope efficiency can exceed 20% by means of increasing the coupling efficiency of the pump to the fibre core further.     

2041.3 nm/2054.6 nm simultaneous dual-wavelength single-longitudinal-mode Tm,Ho:YVO<Subscript>4</Subscript> microchip laser

We report a single-longitudinal-mode CW diode-pumped Tm, Ho: YVO₄ microchip laser emitting at both 2041.3 and 2054.6 nm. At each wavelength, the laser has a single longitudinal mode. The total single-longitudinal-mode output power reaches 185 mW with 20.4% optical conversion efficiency at 905 mW incident pump power.     

Tunable single frequency cesium laser

We present an optically pumped ring cavity Cs vapor laser with output power of 80 mW operating in a single longitudinal mode at 894 nm and tunable over 14 GHz. This laser can be used for laser cooling, production of a spin polarized atoms, spectroscopy and quantum optics.     

Simultaneous Generation of Multi-Wavelength Laser from Nd:YAG Crystals in a Cruciform Cavity

A cruciform cavity is presented for multi-wavelength laser generation. On the basis of considering the optimal power ratio and good spatial overlap of the two fundamental beams, the maximum output power of 589 nm laser reaches 3.5 W when the pumping power of Nd：YAG A and Nd：YAG B are 311.5 W and 261.8 W, respectively. At the same time, the other wavelength lasers are also obtained with the output power distribution of 2.5 W at 66Onto, 15 W at 532nm, lOOmW at 1319nm and 240mW at 1064nm. The corresponding beam quality factors are M^2 x = 4.93, M^2 y = 5.01 at 589nm, M^2z = 4.51, M^2 y = 4.85 at 660hm, and M^2 x = 4.12, M^2 y = 3.96 at 532nm, respectively. The instabilities of the three visible lights are measured, which are also less than 2% within three hours.     

Passively Mode-Locked Quasi-Three-Level Nd:LuVO4Laser with Semiconductor Saturable Absorber Mirror

We demonstrate a passively a Z-folded resonator. Using device, we achieve stable cw average output power under cw mode-locked Nd：LuVO4 laser operating on the quasi-three-level at 916nm with a semiconductor saturable absorber mirror （SESAM） as the passive mode-locking mode locking with 6.7ps pulse duration at repetition rate of 133 MHz and 88mW the pump power of 17.1 W.     

双波长二极管合束端面抽运掺镨氟化钇锂单纵模360nm紫外激光器

报道了一种双波长半导体激光二极管(LD)合束端面抽运掺镨氟化钇锂晶体(Pr~(3+):LiYF_4)全固态、单纵模360nm紫外激光器.该激光器采用V形折叠腔结构,利用反射式体布拉格光栅作为波长选择反射镜来压缩光谱线宽,与法布里-珀罗(F-P)标准具组合构成窄带滤波器进行单纵模的有效选取,通过Ⅰ类位相匹配切割的倍频晶体三硼酸锂对腔内720nm基频光进行倍频.在444nmLD输出功率为1200mW和469nmLD输出功率为1400mW时,合束抽运获得了功率为112mW的连续单纵模360nm紫外激光稳定输出,光-光转换效率为4.3%.测量结果表明,边摸抑制比大于60dB,4h功率均方根值稳定性优于0.5%,1h频率漂移小于220MHz,激光振幅噪声小于0.5%.     

单频窄线宽分布布拉格反射光纤激光器研究

分析了单频窄线宽分布布拉格反射（DBR）光纤激光器的单模工作条件,在此基础上算出单模工作区域,制作了一个单频窄线宽分布布拉格反射光纤激光器。该激光器在波长为975.5nm的半导体激光器抽动下,在1556.91nm波长处。当抽运功率为55.35mW时输出功率可达1.43mW,频宽小于1.2MHz(受测量仪器分辨率限制）。经测量,该输出激光是稳定的单纵模输出。     

LD抽运Cr,Tm,Ho∶YAG微片激光器单纵模运转特性的研究

研究了LD抽运的单纵模Cr,Tm,Ho∶YAG微片激光器,激光器厚度为1?mm,在用波长785?nm的LD进行端面抽运时,激光器阈值为1060?mW,单纵模激光最大输出功率为31?mW. 对激光器输出功率随温度变化特性进行了研究,验证了CTH∶YAG晶体的温度敏感性. 还研究了激光器的温度调谐特性,实验测得激光器的温度调谐系数为14?GHz/℃. 关键词： 激光光学 CTH∶YAG微片激光器 LD抽运 单纵模运转     

Five-hundred-milliwatts distributed-feedback diode laser emitting at 940 nm

A DFB laser emitting at a wavelength around 940 nm in a single longitudinal mode up to an output power of 500 mW with a side mode suppression ratio greater than 50 dB is presented. More than 4 nm tuning range was reached by varying the current between 100 and 800 mA. Up to a power of about 300 mW, the lateral far field revealed stable fundamental mode operation.     

Single-frequency cw vertical external cavity surface emitting semiconductor laser at 1003 nm and 501 nm by intracavity frequency doubling

This work reports single-frequency laser oscillation at λ=1003.4 nm of a diode-pumped vertical external cavity surface-emitting semiconductor laser for metrological applications. A low thermal resistance of the semiconductor active component is achieved by solid-liquid interdiffusion bonding onto a SiC substrate. The spectro-temporal dynamics of the laser is theoretically studied. Experimentally, an output power of 1.7 W is demonstrated in free running operation, and up to 500 mW in a true single longitudinal mode. Furthermore, single-frequency laser emission at λ=501.7 nm is obtained by intracavity frequency doubling, resulting in a total output power as high as 62 mW. PACS 42.55.Px; 42.55.Xi; 42.62.Eh; 42.65.Ky     

Tunable single-frequency operation of a diode-pumped vertical external-cavity laser at the cesium D<Subscript>2</Subscript> line

We report on a diode-pumped vertical external-cavity surface-emitting laser emitting around 852 nm for Cesium atomic clocks experiments. We have designed a 7-quantum-well semiconductor structure optimized for low laser threshold. An output power of 330 mW was achieved for 1.1 W of incident pump power. Furthermore, a compact setup was built for low-power single-frequency emission. We obtained an output power of 17 mW in a single longitudinal mode, exhibiting both broad (9 nm) and continuous (14 GHz) tunability around the Cesium D₂ line. The laser frequency has been stabilized on an atomic transition with residual frequency fluctuations ∼300 kHz. Through a beatnote experiment the −3 dB laser linewidth has been measured to <500 kHz over 10 ms.     

Characteristics of a Cataphoresis He-Ca+ Recombination Laser

A cataphoretic input of calcium vapour into the active volume of pulsed He-Ca^＋ laser is designed and made. The recombination laser at 373.3 nm and the R-M transition laser at 854.6 nm are achieved experimentally with modified Blumlein circuit by high-frequency longitudinal pulsed discharge. The dependences of work parameters such as the pulse frequency, the power supply voltage and the helium pressure on laser output characteristics at 373.3nm line are measured and discussed. The maximum laser output power of 136mW and the specific power of 5.9 m W/cm^3 are obtained, respectively.     

Narrow bandwidth operation of high-power broad-area diode laser using cascaded phase-conjugate injection locking

A broad-area laser is injection-locked by another broad-area laser that is also injection-locked by a single-mode diode laser. Two double-phase conjugate mirrors of photorefractive BaTaO₃ are used to couple the master laser beams to the first slave laser, and the first slave laser output to the second slave laser. One of the double-phase conjugate mirrors is built up with the beams from two broad-area lasers. Two slave lasers are oscillating in single longitudinal mode at 808.5 nm and the spectral width is the same as that of the master laser. Final single-mode output power from the second slave broad-area laser is 840 mW, which is limited by the power of the injection beam. This work verifies the possibility of the multi-stage cascaded injection locking of high-power diode lasers with phase-conjugate injection. Received: 18 November 1998 / Revised version: 29 January 1999 / Published online: 7 April 1999     

A tunable dual frequency Tm:YAG laser

A compact design for a single mode Tm:YAG laser is presented. With two thin infrasil etalons as the only intracavity tuning elements a tuning range from 1940 to 2030 nm with a gap between 2000 and 2020 nm can be realized. The laser emits in two longitudinal modes separated by 1 GHz. Pumped with 500 mW power from a Ti:sapphire laser at 786 nm the output is above 50 mW over the entire tuning range. Frequencies can be rapidly varied over a range of 4 GHz.     

High Power Continuous-Wave and Acousto-Optic Q-Switched Nd：GdVO4 Laser Operated at 912 nm

We present a high power and efficient operation of the ^4F3/2 → ^4I9/2 transition in Nd：GdVO4 at 912nm. In the cw mode, the maximum output power of 8.6 W is achieved when the incident pump power is 40.3 W, leading to a slope efficiency of 33.3% and an optical-optical efficiency of 21.3%. To the best of our knowledge, this is the highest cw laser power at 912nm obtained with the conventional Nd：GdVO4 crystal. Pulsed operation of 912nm laser has also been realized by inserting a small aeousto-optie （A-O） Q-Switch inside the resonator. As a result, the minimal pulse width of 20ns and the average laser power 1.43 W at the repetition rate of lOkHz are obtained, corresponding to 7.1 kW peak power. We believe that this is the highest laser peak power at 912nm. Furthermore, duration of 65ns has also been acquired when the repetition rate is 100 kHz.     

光纤光栅F-P标准具选模单频环形腔光纤激光器

 讨论了光纤光栅法布里-珀罗(F-P)标准具选模光纤激光器的单频运转原理，并研制了全光纤结构单频掺Er³⁺光纤环形激光器。实验中采用两个976 nm激光二极管双向泵浦作为泵浦源，高掺杂浓度掺Er³⁺光纤作为增益介质，以行波腔消除空间烧孔效应，利用光纤光栅F-P标准具窄带选模特性，当泵浦光功率为36 mW时，得到了稳定的单频激光输出。实验中使用了长5和3 m的掺杂光纤，在泵浦光功率为145 mW时输出功率分别为19和42 mW，光-光转换效率分别为13%和29%，斜率效率分别达到了16%和33%。输出谱线3 dB带宽0.01 nm，无跳模现象。     

Temperature dependence of interband transition energy in InGaAsN strain-compensated quantum-well and ridge-waveguide lasers fabricated with pulsed anodic oxidation

Ridge-waveguide InGaAsN triple-quantum-well strain-compensated lasers grown by metal organic chemical vapor deposition were fabricated with pulsed anodic oxidation. The laser’s output power reached 145 mW in continuous-wave mode at room temperature for a 4-?m -stripe-width laser. Continuous-wave single longitudinal mode operation was maintained at a high injection current level with a wavelength of 1287.3 nm at room temperature. Single longitudinal mode operation at 1317.2 nm was achieved at twice the threshold current at 100 °C. The band gap of InGaAsN in the quantum wells at different temperatures was calculated and compared to the measured temperature-dependent laser wavelength.     

Efficient single-mode operation of a standing-wave dye laser

The selection of a single longitudinal mode of a dye laser can be achieved with double or triple Michelson reflectors instead of Fabry-Perot etalons inside the laser cavity. These systems can be adapted to commercial multimode dye lasers. They provide a high efficiency and a good geometrical quality of the output beam. With a 7 watt pump power (λ=514.5 nm line of the Ar⁺ laser), a tunable output power of 1 watt was obtained at the peak of R6G, in the main output beam; the total single-mode power, including the auxiliary output beams, exceeded 1.4 watt. These results correspond to efficiencies of 14% and 20%, respectively (24% and 30% slope efficiencies). We discuss in the text why these efficiencies are comparable to those of ring lasers. In the infrared, with a 4.5 watt pump power (red lines of a Kr⁺ laser), 250 mW of single-mode output power in the main output beam was obtained at 780 nm with Oxazine 750.     

激光二极管端泵微片固体激光器的研究

本文介绍了一种用波长为809nm的激光二极管(LD)端面泵浦厚度为1mm的微片Nd:YVO4全固化固体激光器。器件结构上采用了一种独特的光学系统,该系统由分别用于LD激光束的耦合和聚焦的两部分组成。由Nd:YVO4的一个平面与一个曲率半径为21mm的球面镜组成半共焦腔,以获得高的转换效率。文中详细讨论了单横模运转时的泵浦光与激光腔模之间的匹配问题。当泵浦光功率为400mW时,获得152mW的1064nm波长的TEM00模激光输出。器件阈值功率为48.3mW,总的光-光转换效率为38%,斜效率为43%.     

激光二极管泵浦Nd：YVO4晶体的高效内腔倍频绿光激光器研究

对两种Ｎｄ：ＹＶＯ４晶体的内腔倍频特性进行了研究和实验对比，Ⅱ号晶体的倍频效率比Ｉ号晶体提高一倍，斜率效率达到３１％。此外，用１Ｗ国产半导体二极管泵浦一块浓度２％的晶体，其最高输出绿光达１０８ｍＷ，降低输入泵浦功率，单频绿光功率大于１０ｍＷ。