Study on the Ce substitution effects of BiFeO3 films on ITO/glass substrates

Ce substituted Bi_1−xCe_xFeO₃ (BCFO) films with x=0–0.15 were deposited on indium tin oxide (ITO)/glass substrates by sol–gel process annealed at 500 °C. Rhombohedral phase was confirmed by XRD study and no impure phases were observed till x=0.15. Substantially enhanced ferroelectricity was observed at room temperature due to the substitution of Ce. In the films with x=0.05 and 0.10, the double remnant polarization are 75.5 and 57.7 μC/cm² at an applied field 860 kV/cm. Moreover, the breakdown field was enhanced in the films with Ce substitution.     

Edge-defined film-fed growth of Yb:YVO4 single crystal plates

The applicability of the edge-defined film-fed growth (EFG) technique for Yb_xY_(1−x)VO₄ (x=0.05, 0.1 and 1) was approved by successful growth of crystals up to 80 mm in length as the thin plates. Low-angle grain boundaries and the crystal coloration as main defects were found. Optimal seed orientation was suggested on the strength of vanadate crystal plate morphology. Optical properties, chemical composition and the crystalline quality were investigated.     

The effect of the AlxGa1−xN/AIN buffer layer on the properties of GaN/Si(1 1 1) film grown by NH3-MBE

We describe the growth of GaN on Si(1 1 1) substrates with Al_xGa_1−xN/AlN buffer layer by ammonia gas source molecular beam epitaxy (NH₃-GSMBE). The influence of the AlN and Al_xGa_1−xN buffer layer thickness and the Al composition on the crack density of GaN has been investigated. It is found that the optimum thickness is 120 and 250 nm for AlN and Al_xGa_1−xN layers, respectively. The optimum Al composition is between 0.3<x<0.6.     

Investigations on the effect of InSb and InAsSb step-graded buffer layers in InAs0.5Sb0.5 epilayers grown on GaAs (0 0 1)

We report the structural and electrical properties of InAsSb epilayers grown on GaAs (0 0 1) substrates with mid-alloy composition of 0.5. InSb buffer layer and InAs_xSb_1−x step-graded (SG) buffer layer have been used to relax lattice mismatch between the epilayer and substrate. A decrease in the full-width at half-maximum (FWHM) of the epilayer is observed with increasing the thickness of the InSb buffer layer. The surface morphology of the epilayer is found to change from 3D island growth to 2D growth and the electron mobility of the sample is increased from 5.2×10³ to 1.1×10⁴ cm²/V s by increasing the thickness of the SG layers. These results suggest that high crystalline quality and electron mobility of the InAs_0.5Sb_0.5 alloy can be achieved by the growth of thick SG InAsSb buffer layer accompanied with a thick InSb buffer layer. We have confirmed the improvement in the structural and electrical properties of the InAs_0.5Sb_0.5 epilayer by quantitative analysis of the epilayer having a 2.09 μm thick InSb buffer layer and 0.6 μm thickness of each SG layers.     

A study of the degree of relaxation of AlGaN epilayers on GaN template

The strain state of 570 nm Al_xGa_1−xN layers grown on 600 nm GaN template by metal organic chemical vapor deposition was studied using Rutherford backscattering (RBS)/channeling and triple-axis X-ray diffraction measurements. The results showed that the degree of relaxation (R) of Al_xGa_1−xN layers increased almost linearly when x0.42 and reached to 70% when x=0.42. Above 0.42, the value of R varied slowly and Al_xGa_1−xN layers almost full relaxed when x=1 (AlN). In this work the underlying GaN layer was in compressive strain, which resulted in the reduction of lattice misfit between GaN and Al_xGa_1−xN, and a 570 nm Al_xGa_1−xN layer with the composition of about 0.16 might be grown on GaN coherently from the extrapolation. The different shape of (0 0 0 4) diffraction peak was discussed to be related to the relaxation.     

Synthesis and characterization of type-II textured tungsten disulfide thin films by vdWR process with Pb interfacial layer as texture promoter

The growth of type-II textured tungsten disulfide (WS₂) thin films by solid state reaction between the spray deposited WO₃ and gaseous sulfur vapors with Pb interfacial layer has been studied. X-ray diffraction (XRD) technique is used to measure the degree of preferred orientation ‘S’ and texture of WS₂ films. Scanning electron microscopy (SEM) and transmission electron microscopy techniques have been used to examine the microstructure and morphology. The electronic structure and chemical composition were studied using X-ray photoelectron spectroscopy (XPS). The use of Pb interfacial layer for the promotion of type-II texture in WS₂ thin films is successfully demonstrated. The presence of (0 0 3 l), (where l=1, 2, 3, …) family of planes in the XRD pattern indicates the strong type-II texture of WS₂ thin films. The crystallites exhibit rhombohedral (3R) structure. The large value of ‘S’ (1086) prompts the high degree of preferred orientation as well. The stratum of crystallites with their basal plane parallel to the substrate surface is seen in the SEM image. The EDS and XPS analyses confirm the tungsten to sulfur atomic ratio as 1:1.75. We purport that Pb interfacial layer enhances type-II texture of WS₂ thin films greatly.     

Thermal stability and crystallization kinetics of new As–Ge–Se–Sb glasses

Thermal stability and crystallization kinetics of As₁₄Ge₁₄Se_72−xSb_x (where x = 3, 6, 9, 12 and 15 at.%) glasses are studied by the differential scanning calorimetry. The values of the glass transition temperature (T_g) and the peak temperature of crystallization (T_p) are found to be dependent on heating rate and antimony content. From the heating rate dependence of T_g and T_p the values of the activation energy for glass transition (E_t) and the activation energy for crystallization (E_c) are evaluated and their composition dependence discussed. Crystallization studies have been made under non-isothermal conditions with the samples heated at several uniform rates. Using a recent analysis developed for non-isothermal crystallization studies, information on some aspects of the crystallization process has been obtained. The stability calculations emphasized that the thermal stability decreases with increasing the Sb content.     

Material characteristics of metalorganic chemical vapor deposition of Bi2Te3 films on GaAs substrates

Metal organic chemical vapor deposition has been investigated for growth of Bi₂Te₃ films on (0 0 1) GaAs substrates using trimethylbismuth and diisopropyltelluride as metal organic sources. The results of surface morphology, electrical and thermoelectric properties as a function of growth parameters are given. The surface morphologies of Bi₂Te₃ films were strongly dependent on the deposition temperatures. Surface morphologies varied from step-flow growth mode to island coalescence structures depending on deposition temperature. In-plane carrier concentration and electrical Hall mobility were highly dependent on precursor's ratio of VI/V and deposition temperature. By optimizing growth parameters, we could clearly observe an electrically intrinsic region of the carrier concentration at the temperature higher than 240 K. The high Seebeck coefficient (of −160 μVK⁻¹) and good surface morphology of this material is promising for Bi₂Te₃-based thermoelectric thin film and two-dimensional supperlattice device applications.     

Synthesis of Y2O3:Eu phosphors by bicontinuous cubic phase process

A novel approach for preparation of red-emitting europium-doped yttrium oxide phosphor (Y₂O₃:Eu) by using the bicontinuous cubic phase (BCP) process was reported in this paper. The BCP system was composed of anionic surfactant sodium bis(2-ethylhexyl)sulfosuccinate (AOT) and aqueous yttrium nitrate/europium nitrate solution. Energy dispersive spectrometer analysis revealed the homogeneous precipitation occurred in the BCP structure. Thermogravimetric analysis measurements indicated the precursor powder was europium-doped yttrium hydroxide, Y_1−xEu_x(OH)₃. Scanning electron microscopy micrographs showed the precursor powder had a primary size about 30 nm and narrow size distribution. After heat treatment in furnace above 700 °C for 4 h, high crystallinity Y₂O₃:Eu phosphors was obtained. However, the primary size of particles grew to 50–200 nm and the dense agglomerates with a size below 1 μm were formed. X-ray diffraction patterns indicated the crystal structure of precursor powders and Y₂O₃:Eu phosphors were amorphous and body-centered cubic structure, respectively. The photoluminescence analysis showed that the obtained Y₂O₃:Eu phosphor had a strong red emitting at 612 nm and the quenching started at a Eu concentration of 10 mol%. This study indicated that the BCP process could be used to prepare the highly efficient oxide-based phosphors.     

Electrical conductivity and photoreflectance of nanocrystalline copper nitride thin films deposited at low temperature

Nanocrystalline thin films of copper nitride were grown on Si (1 0 0) wafers at a low substrate temperature by reactive magnetron sputtering of Cu target with the mixture of nitrogen and argon. The influence of nitrogen deficiency upon the structural, optical and electrical properties of as-deposited films was investigated. X-ray diffraction confirms the presence of cubic Cu₃N and Cu biphases irrespective of carefully optimized processing parameters. With a Cu content approaching the stoichiometry for Cu₃N, the films assume a smooth morphology with densely-packed nanocrystallites of about 40–60 nm in size. Those deposits containing more than 79% Cu are metallic conductors with excellent electrical conductivity via a percolation mechanism, whereas the slightly substoichiometric Cu₃N films show a typical behavior of deficit semiconductor, with an optical gap of about 1.85 eV as revealed by photoreflectance measurement. All the observations are discussed in terms of nitrogen reemission from the growing film.     

XPS and electroluminescence studies on SrS1−xSex and ZnS1−xSex thin films deposited by atomic layer deposition technique

SrS_1−xSe_x and ZnS_1−xSe_x thin films were deposited by the atomic layer deposition (ALD) technique using elemental selenium as the Se source, thus avoiding use of H₂Se or organometallic selenium compounds. X-ray diffraction (XRD) analysis showed that the films were solid solutions and X-ray photoelectron spectroscopy (XPS) data showed that the surface of both ZnS_1−xSe_x and SrS_1−xSe_x were covered with an oxide and carbon-containing contaminants from exposure to air. The oxidation of SrS_1−xSe_x extended into the film and peak shifts from sulfate were found on the surface. Luminance measurements showed that emission intensity of the ZnS_1−xSe_x:Mn alternating current thin film electroluminescent (ACTFEL) devices at fixed voltage was almost the same as that of the ZnS:Mn device, while emission intensity of the SrS_1−xSe_x:Ce devices decreased markedly as compared to the SrS:Ce device. Emission colors of the devices were altered only slightly due to selenium addition.     

The incorporation behavior of arsenic and antimony in GaAsSb/GaAs grown by solid source molecular beam epitaxy

GaAsSb ternary epitaxial layers were grown on GaAs (0 0 1) substrate in various Sb₄/As₂ flux ratios by solid source molecular beam epitaxy. The alloy compositions of GaAs_1−ySb_y were inferred using high-resolution X-ray symmetric (0 0 4) and asymmetric (2 2 4) glance exit diffraction. The non-equilibrium thermodynamic model is used to explain the different incorporation behavior between the Sb₄ and As₂ under the assumption that one incident Sb₄ molecule produces one active Sb₂ molecule. It is inferred that the activation energy of Sb₄ dissociation is about 0.46 eV. The calculated results for the incorporation efficiency of group V are in good agreement with the experimental data.     

Growth and properties of (Pb0.90La0.10)TiO3 thick films prepared by RF magnetron sputtering with a PbO buffer layer

The (Pb_0.90La_0.10)TiO₃ [PLT] thick films (3.0 μm) with a PbO buffer layer were deposited on the Pt(1 1 1)/Ti/SiO₂/Si(1 0 0) substrates by RF magnetron sputtering method. The PLT thick films comprise five periodicities, the layer thicknesses of (Pb_0.90La_0.10)TiO₃ and PbO in one periodicity are fixed. The PbO buffer layer improves the phase purity and electrical properties of the PLT thick films. The microstructure and electrical properties of the PLT thick films with a PbO buffer layer were studied. The PLT thick films with a PbO buffer layer possess good electrical properties with the remnant polarization (P_r=2.40 μC cm⁻²), coercive field (E_c=18.2 kV cm⁻¹), dielectric constant (ε_r=139) and dielectric loss (tan δ=0.0206) at 1 kHz, and pyroelectric coefficient (9.20×10⁻⁹ C cm⁻² K⁻¹). The result shows the PLT thick film with a PbO buffer layer is a good candidate for pyroelectric detector.     

Compositional plane of a wide-gap semiconductor CaCdSeS lattice-matched to InP and GaAs

We have investigated compositional plane of a wide band gap solid solution semiconductor Ca_1−xCd_xSe_1−yS_y (x0.32) using powder synthesis under thermal equilibrium condition. The solubility limit at 1273 K varies with respect to the Se concentration y, taking a minimum Cd solubility limit of 0.12 at y=0.8 and a maximum limit of 0.32 at y=1.0. It is found that the system can be lattice-matched to GaAs and InP under covering the energy band gap of ultraviolet–visible region. These results allow to design optoelectronic devices adopting the Ca_1−xCd_xSe_1−yS_y system.     

氧分压调控氧化铜薄膜生长及其表面功函数研究

本文采用反应磁控溅射法制备p型二元铜氧化物半导体薄膜,通过氧气流量调节实现Cu₂O、CuO和Cu₄O₃薄膜的可控生长。所制备薄膜的形貌与结构分别利用扫描电子显微镜、X射线衍射仪以及拉曼光谱进行表征。经紫外可见分光光度计测量可知,Cu₂O、CuO和Cu₄O₃薄膜的带隙分别为2.89 eV、1.55 eV和2.74 eV。为进一步研究Cu₂O、CuO和Cu₄O₃薄膜的表面物理性质,基于Kelvin探针力显微镜(KPFM)技术直接测量了薄膜样品与探针尖端间的接触电位差(V_CPD),结果表明Cu₂O、CuO和Cu₄O₃薄膜的表面功函数都随着温度的升高而呈现逐渐减小的趋势。     

Microstructure and growth rate of chemical vapour deposited TiN films in a vertical cold wall reactor

TiN films were grown on SUS304 substrates heated by an induction furnace in a vertical cold wall reactor. Scanning electron microscopy, transmission electron microscopy and X-ray diffraction were used to characterize the microstructures of films obtained at different deposition conditions (temperature, gas flow rate and gas composition). Film structures obtained in the present vertical reactor had the following features compared with those in the tubular reactor: (1) Abnormally grown “star-shaped” crystals were observed on the surfaces of films deposited in the following ranges of total gas flow rate (Q_T), temperature (T) and partial pressures (P): 9.0×10⁻⁶ ≤ Q_T ≤ 1.6×10⁻⁵ m³ s⁻¹, 1223 ≤ T ≤ 1273 K, 0.92 ≤ P_TiCl4 ≤ 6.18 kPa, P_H2 = P_N2. The matrix grains were responsible for (211) preferred orientation. (2) Surface morphologies did not vary so much with P_TiCl4. On the other hand, a drastic change was brought about by adding HCl to the source gas, i.e., plate-shaped crystals dominated and the large “star-shaped” crystals were no longer present. (3) The apparent activation energy for deposition reaction was 230 kJ/mol (1173 ≤ T ≤ 1273 K) and 76.5 kJ/mol (1273 ≤ T ≤ 1373 K) at P_TiCl4 = 2.43 kPa and P_H2 = P_N2 = 49.45 kPa.     

Electron microscopy studies of epitaxial MgB2 superconducting thin films grown by in situ reactive evaporation

The morphology and chemistry of epitaxial MgB₂ thin films grown using reactive Mg evaporation on different substrates have been characterized by transmission electron microscopy methods. For polycrystalline alumina and sapphire substrates with different surface planes, an MgO transition layer was found at the interface region. No such layer was present for films grown on MgO and 4-H SiC substrates, and none of the MgB₂ films had any detectable oxygen incorporation nor MgO inclusions. High-resolution electron microscopy revealed that the growth orientation of the MgB₂ thin films was closely related to the substrate orientation and the nature of the intermediary layer. Electrical measurements showed that very low resistivities (several μΩ cm at 300 K) and high superconducting transition temperatures (38 to 40 K) could be achieved. The correlation of electrical properties with film microstructure is briefly discussed.     

The effects of As and Te on the crystallization and optical gaps of selenium

Glasses with compositions Te_xSe_100−x (0x25 at.%), As_ySe_100−y (0y40 at.%) and As₂Te_zSe_98−z (0z25 at.%) were prepared. The effects of the additives As and Te on the crystallization behaviour and optical gaps of selenium were studied. The relationship between the above properties and the chemical bond nature of the glass constituents is discussed. Materials with long lifetime and high sensitivity can be obtained by the addition of certain amounts of As and Te into Se.     

化学水浴沉积法制备硫化镉薄膜的微结构和性能

采用化学水浴沉积法在不同氨水用量下制备了Cu(In,Ga)Se₂太阳能电池的缓冲层CdS薄膜,根据化学平衡动力学计算出混合溶液中反应粒子的初始浓度、pH值和离子积,利用台阶仪、扫描电子显微镜(SEM)、X射线衍射仪(XRD)、量子效率测试仪(EQE)和IV测试仪对制备样品的薄膜厚度、表面形貌、晶体结构、量子效率和光电转换效率进行了表征和分析。结果表明:提高氨水用量可以抑制同质反应,促进异质反应,使CdS薄膜晶体结构从立方相向六方相转变,晶粒形状从柳絮状向颗粒状转变,晶粒尺寸逐渐增大,粒径分布更加均匀,薄膜表面更加平整,制备电池的EQE、V_oc、J_sc、FF、R_s等电学参数得到优化,光电转换效率从7.64%提高到13.60%。     

Structure and properties of the pure and Pr-doped Ge25Ga5Se70 and Ge30Ga5Se65 glasses

The Ge₂₅Ga₅Se₇₀ and Ge₃₀Ga₅Se₆₅ pure and Pr³⁺-doped glasses were prepared by direct synthesis from elements and PrCl₃. It was found that up to 1 mol% PrCl₃ can be introduced in the Ge₂₅Ga₅Se₇₀ and Ge₃₀Ga₅Se₆₅ glasses. Both types of glasses with overstoichiometric and substoichiometric content of Se were homogeneous and of black color. The optical energy gap is E^opt_g=2.10 eV, and the glass transition temperature is T_g=543 K for Ge₂₅Ga₅Se₇₀ and T_g=633 K for Ge₃₀Ga₅Se₆₅. The long-wavelength absorption edge is near 14 μm and it corresponds to multiphonon processes. Doping by Pr³⁺ ions creates absorption bands in transmission spectra, which can be assigned to the electron transitions from the ground ³H₄ level to the higher energy levels of Pr³⁺ ions ³H₅, ³H₆, ³F₂, ³F₃ and ³F₄, respectively. By excitation with YAG:Nd laser line (1064 nm), two intense luminescence bands (1343 and 1601 nm) were excited. The first band can be ascribed to electron transitions between ¹G₄ and ³H₅ energy levels of Pr³⁺ ions. Full width at half of maximum (FWHM) of the intensity of luminescence was found to be 70 nm for (Ge₂₅Ga₅Se₇₀)_1 − x(PrCl₃)_x and (Ge₃₀Ga₅Se₆₅)_1 − x(PrCl₃)_x glasses. The FWHM in selenide glasses is lower than in halide and sulphide glasses. The second luminescence band (1601 nm) can be probably ascribed to the transitions between ³F₃ and ³H₄ energy levels of Pr³⁺ ions. The absorption and luminescence spectra of Pr³⁺ ions in studied glasses are slightly influenced by stoichiometry of glassy matrix. The Raman spectra of studied glasses were deconvoluted and assignment of Raman bands to individual vibration modes of basic structural units was suggested. The structure of studied glasses is mainly formed by corner-sharing and edge-sharing GeSe₄ tetrahedra. The vibration modes of Ga-containing structural units were not found, they are apparently overlapping with Ge-containing structural units due to small difference between atomic weights of Ge and Ga. In the glasses with substoichiometry of Se, the Ge–Ge bonds of Ge₂Se₆ structural units were found. In Se-rich glasses the Se–Se vibration modes were found. In all studied glasses also ‘wrong' bonds between like atoms were found in small amounts. Maximum phonon energy of studied glasses is 320 cm⁻¹.