过渡金属掺杂SnO_2的电子结构与磁性

采用密度泛函理论及赝势平面波方法,对未掺杂SnO_2以及过渡金属V、Cr、Mn掺杂SnO_2的超原胞体系进行了几何优化,计算了晶格常数、电子结构与磁学性质.结果表明,6.25%与12.5%两种掺杂浓度时,体系的电子自旋和磁学性质没有发生很大的变化;相对于未掺杂SnO_2,过渡金属掺杂后SnO_2中O原子有向过渡金属移动的趋势,并使得O与掺杂金属之间键长变短;在V和Cr掺杂后,SnO_2具有半金属性质,而Mn掺杂SnO_2没有发现上述性质.6.25%与12.5%的杂质浓度对自旋和磁矩影响不大,掺杂产生的磁矩主要来自于过渡金属3d电子态,且磁矩的大小与过渡金属的电子排布有关.V、Cr、Mn掺杂SnO_2后的总磁矩分别为0.94μ_B、2.0μ_B、3.00μ_B.磁矩主要来源于过渡金属3d轨道的自旋极化,当O原子出现负磁矩的时候,还有很小一部分磁矩来源于临近过渡金属的Sn原子.     

过渡金属掺杂铈中晶格氧的活化

采用密度泛函理论计算研究了在铈表面掺杂的过渡金属(TM)离子对表面晶格氧原子活化的影响.为此,测定了经TM离子修饰的CeO2最稳定(111)表面终端的结构和稳定性.除了保持八面体氧配位的锆和铂掺杂剂外, TM掺杂剂在取代表面Ce离子时更倾向于正方形平面配位.除了Pt(1.14 eV)和Zr(正方形平面配位不稳定)外,所有TM掺杂剂的表面结构从八面体到正方形平面都很容易.通常,四价TM阳离子的离子半径比Ce^4+的小得多,从而导致了显著的拉伸应变晶格,并解释了氧空位形成能量的降低.除Zr外,当产生一个氧空位时,优先形成正方形平面结构.热力学分析表明, TM掺杂CeO2表面在典型环境催化条件下存在氧缺陷.一个具有实际意义的例子是锆掺杂CeO2(111)中的晶格氧容易活化,从而有利于CO氧化.研究结果强调了晶格氧活化的本质和TM掺杂剂在TM-铈固溶催化剂中的优选位置.     

过渡金属掺杂磁性纳米粒子在生物医学领域中的研究进展

在过去50多年中,磁性纳米粒子(MNPs)由于其可协调的磁性、非侵入性、易操控性和良好的生物相容性等优点得到了广泛的关注.从具有复合结构或不同形状的MNPs的合成方法到与MNPs相关的大量表征技术,其应用领域也与我们的生活紧密相关.然而,MNPs的复杂磁行为受到多种参量的影响,包括粒径、成分、形状和结构等.基于此,通过...     

Cu掺杂MgF2晶体的电子结构及光学特性

基于密度泛函理论(DFT)的第一性原理平面波超软赝势方法,计算了纯的MgF2晶体和掺杂不同原子分数(2.08%,4.16%,6.24%)Cu的MgF2晶体结构、电学性质以及光学性质.结果表明:Cu的掺入导致MgF2晶体禁带宽度逐渐变窄,并且Cu掺杂使得MgF2晶体折射率和吸收峰增加,特别是在4eV附近区域出现了新吸收峰.同时也给出了引起体系性质变化的物理机制,Cu掺杂MgF2晶体在光电化学方面有着潜在的应用价值.     

纳米晶Sb掺杂SnO2(ATO)粉体的合成与表征

以Sn粉和Sb₂O₃为原料.采用共沉淀法制备了纳米ATO粉.TG-DSC及FTIR结果表明.450℃以前前驱体已失去全部水分.并完全转化为氧化物.XRD测量结果表明.所得ATO粉具有四方金红石结构.500℃焙烧后粉体的粒径为12nm.随着焙烧温度的升高.粉体的粒径增加.TEM测定结果表明,粉体的分散性很好.团聚很少.粉体的烧结性能良好,950℃时烧结5h即达到理论密度的97.3％.用霍尔系数法测定粉体的导电行为.表明该粉体具有良好的导电性能.     

O掺杂MgF2电子结构和光学性质的第一性原理研究

基于密度泛函理论(DFT)的第一性原理平面波超软赝势方法,计算了O原子不同比例(12.5％,8.33％和6.25％)掺杂MgF2晶体的几何结构、电子结构和光学性质.通过对比发现,由于O原子的掺入,体系的禁带宽度减小,材料呈现半金属性.计算也表明,O掺杂对静态介电常数和光吸收系数有重要调制作用,同时也给出了体系性质变化的...     

铜族金属与完整及氮掺杂石墨烯的相互作用

基于广义梯度密度泛函理论和周期平板模型,研究了铜族金属单原子和双原子簇与完整及氮掺杂石墨烯的结合情况.结果表明,氮掺杂后石墨烯的电子结构特性由半金属性变为金属性;铜族金属在完整及石墨型氮掺杂石墨烯上的吸附较弱,结合能约为0.5eV,而在吡啶型氮掺杂和吡咯型氮掺杂石墨烯上有较强的化学吸附,结合能一般大于1eV;吡咯型氮掺杂后的构型不稳定,金属原子及簇与包含该结构的石墨烯衬底作用时会使其向吡啶型氮掺杂转变,并最终得到基于吡啶型氮掺杂的稳定吸附构型.Mulliken电荷布居分析显示,吸附在吡啶型氮掺杂石墨烯上的金属单原子与金属双原子簇带电性质相反.态密度及轨道分析表明,Cu与吡啶型氮掺杂石墨烯空位处留有悬挂键的三个原子成键,而Au与其中两个C原子成键.     

过渡金属电解水催化剂的非金属掺杂研究进展

过渡金属基材料成本相对较低,催化性能较为优异,是在全水分解领域最有希望替代贵金属基电催化剂的候选材料之一,但有限的活性位点、相对较差的电导率等因素限制了其广泛应用。非金属元素掺杂能够调节主体材料电子结构,优化吸附能,从而对过渡金属基电催化剂的活性与稳定性产生积极影响,缩减其与贵金属材料性能差距。本文总结了近年来非金属元素改性在过渡金属基电催化材料中的相关研究,系统综述了非金属元素掺杂的方法和不同非金属元素的掺杂效果,从物理化学性质的改变和电子结构的变化多角度分析了非金属元素改性对过渡金属基材料的影响,最后对非金属元素掺杂过渡金属基电催化剂的未来发展方向作出了展望。     

过渡金属混合簇Nb2Rh2的密度泛函研究

采用密度泛函方法(DFT)研究了过渡金属混合簇Nb_mRh_n (m, n≤2) 的结构、稳定性规律及它们的成键情况. 结果表明, Nb—Nb键较强, Rh—Rh键较弱, 而Nb—Rh键的强度则介于两者之间. 在Nb₂Rh₂直线和折线构型中, 金属键有强弱交替的现象. Nb₂Rh₂的各种构型在自旋多重度较小时稳定.     

过渡金属混合簇Nb2Rh2的密度泛函研究

采用密度泛函方法(DFT)研究了过渡金属混合簇Nb_mRh_n (m, n≤2) 的结构、稳定性规律及它们的成键情况. 结果表明, Nb—Nb键较强, Rh—Rh键较弱, 而Nb—Rh键的强度则介于两者之间. 在Nb₂Rh₂直线和折线构型中, 金属键有强弱交替的现象. Nb₂Rh₂的各种构型在自旋多重度较小时稳定.     

Electronic Properties of Transition and Alkaline Earth Metal Doped CuS: A DFT Study

CuS is a unique semiconductor with potential in optoelectronics. Its unusual electronic structure, including a partially occupied valence band, and complex crystal structure with an S−S bond offer unique opportunities and potential applications. In this work, the use of doping to optimize the properties of CuS for various applications is investigated by density functional theory (DFT) calculations. Among the dopants studied, Ni, Zn, and Mg may be the most practical due to their lower formation energies. Doping with Fe, Ni, or Ca induces significant distortion, which may be beneficial for achieving materials with high surface areas and active states. Significantly, doping alters the conductor-like behavior of CuS, opening a band gap by increasing bond ionicity and reducing the S−S bond covalency. Thus, doping CuS can tune the plasmonic properties and transform it from a conductor to an intrinsic fluorescent semiconductor. Ni and Fe doping give the lowest band gaps (0.35 eV and 0.39 eV, respectively), while Mg doping gives the highest (0.86 eV). Doping with Mg, Ca, and Zn may enhance electron mobility and charge separation. Most dopants increase the anisotropy of electron-to-hole mass ratios, enabling device design that exploits directional-dependence for improved performance.     

TinO2和TinO2-(n=1-10)团簇的几何结构、电子和磁性质

基于密度泛函理论(DFT)的B3LYP方法, 研究了Ti_nO₂和Ti_nO₂^- (n=1-10)团簇的几何结构、电子结构以及磁性. 结果表明, 两个氧以分离的原子状态吸附在金属团簇的表面, 呈现出以一个钛原子为中心的O-Ti-O 的相邻吸附形式. 中性团簇和阴离子团簇的能量最低结构相似. 稳定性分析表明Ti_nO₂具有很高的稳定性, 特别是TiO₂和Ti₇O₂. 此外, 详细讨论了团簇的电离势、电子亲和能、电子解离能和能隙. 基于最低能量结构, 讨论了团簇的磁性, 发现电荷从Ti 原子向O原子转移, 并且电荷转移主要发生在Ti_nO₂的Ti-3d、Ti-4s和O-2p轨道. 磁性团簇中反铁磁序占据主导, 磁矩主要来源Ti-3d电子的贡献, 而两个氧原子的贡献非常小.     

First-Principles Study of La Doping Effects on the Electronic Structures and Photocatalytic Properties of Anatase TiO2

The effects of doping concentration, position and oxygen vacancy defect on the stability, electronic and optical properties of La-doped anatase TiO₂ have been investigated based on DFT+U method. The calculations indicated that the doping concentration and sites of La affected the stability and band gap of La-doped TiO₂ significantly due to the lattice distortion, which obey the ionic Pauling’s rules and crystal field theories; moreover, the simulated adsorption spectrum shows an obviously increase in the photocatalysis properties, which are in good agreement with recently experimental measurements. The oxygen vacancy defect will enhance the structural stability and the adsorption of visible light in La-doped TiO₂ system, which is important in photocatalytic application.     

Electronic Structures and Thermoelectric Properties of Two-Dimensional MoS2/MoSe2 Heterostructures

Thermoelectric properties of bulk and bilayer two-dimensional (2D) MoS₂/MoSe₂ heterostructures are investigated using density functional theory in conjunction with semiclassical Boltzmann transport theory. It is predicted that the bulk 2D heterostructures could considerably enhance the thermoelectric properties as compared with the bulk MoSe₂. The enhancement originates from the reduction in the band gap and the presence of interlayer van der Waals interactions. We therefore propose the 2D MoS₂/MoSe₂ heterostructures as a possible candidate material for thermoelectric applications.     

SnO2纳米粒子的制备与表征

The SnO2 nano-particles with rutile structure were prepared by a Water/Oil (W/O) microemulsion system, composed of Triton X-100 1-hexanol/Cyclohexane/Water. The particles were also compared with that synthesized by citric acid method. The powders were characterized by thermogravimetric analysis (TGA), X-ray diffraction (XRD), transmission electron microscopy (TEM) and infrared spectroscopy (IR). The result showed that the SnO2 particles prepared by microemulsion had fine shape and narrow range of particle size distribution. The crystallite size calcined at 600℃ was 11.49 nm,while the crystallite size prepared by citric acid method was about 17.4 nm.     

SnO2表面卤化提高钙钛矿太阳能电池光伏性能

钙钛矿太阳能电池(PSCs)成为近几年来迅速发展的新型太阳能电池,其中将SnO₂纳米粒子层用作电子传输层(ETL)的钙钛矿太阳能电池器件得到了广泛的关注。SnO₂有着更低的制备温度,使其具备应用于柔性器件的潜力,但与钙钛矿层能级不匹配等问题限制着其发展。而在界面处加入钝化层,尤其是表面卤化的方法或可解决这一问题。本文综合研究了SnO₂表面卤化对钙钛矿太阳能电池光伏性能的影响,选用四丁基氯化铵(TBAC)、四丁基溴化铵(TBAB)和四丁基碘化铵(TBAI)三种钝化材料对SnO₂表面进行钝化处理,并对钝化材料溶液进行了浓度梯度研究。通过材料形貌、结构和光学性能表征以及电池器件性能测试分析等方法,证明了SnO₂表面卤化可提高钙钛矿层的质量和PSCs光伏性能,并从器件内部电荷传输动力学等角度解释了器件性能改善的原因。为进一步说明其性能改善的机理,采用基于密度泛函理论(DFT)的第一性原理计算方法对材料表面性质进行了深入研究,从能量、结构、电荷密度、态密度、功函数等角度解释了表面卤化提高SnO₂/钙钛矿界面处电子传输特性的原因。实验和理论计算均表明TBAC对于SnO₂具有较好的钝化效果,并随着溶液浓度的提升钝化作用越明显。SnO₂表面卤化作用的深入研究不仅对提高电池器件性能具有实际意义,还能够帮助理解太阳能电池界面现象,为界面改性提供新的研究思路。     

Study of SnO2 supported monophase Ce-Rh catalysts

Summary Nanoparticle catalysts based on SnO₂, namely Sn-Ce-Rh-O (100:10:1), were characterized using X-ray photoelectron spectroscopy. The results showed importance of the component elements taking part in the bimolecular condensation of primary alcohols reaction.     

SnO2 /MWCNTs纳米复合材料的低热固相制备及其超电容特性研究

采用十二烷基三甲基溴化铵(DTAB)辅助固相法制备SnO2/MWCNTs纳米复合材料,X射线衍射(XRD)、透射电镜(TEM)测试表明,SnO2纳米颗粒均匀包裹在MWCNTs表面.循环伏安和恒流充放电测试表明,与SnO2颗粒和纯MWCNTs相比,SnO2/MWCNTs纳米复合材料在1.0 mol·L-1 Na2SO4电解液中的电化学电容性质得到明显改善.当SnO2质量分数为11%时,在电流密度0.2 A·g-1下,SnO2的电容值最大可达217.3 F·g-1.     

Well Dispersed SnO2 Nanoclusters Preparation and Modulation of Metal-Insulator Transition Induced by Ionic Liquid

Tin dioxide (SnO₂) has attracted broad interest due to its particular gas-sensor property. Nano- or atom-scale SnO₂ material has always been the aim in order to ultimately improve the sensitivity. However, until now, it remains difficult to synthesize SnO₂ nanoclusters by using traditional methods. In the present work, we have achieved the preparation of SnO₂ nanoclusters by using the cluster beam deposition technique. The obtained nanoclusters were well characterized by high resolution transmission electron microscope HR-TEM. Results indicated the formation of the well-dispersed SnO₂ nanoclusters with uniform size distribution (5-7 nm). Furthermore, an obvious metal insulator transition was observed by gating with ionic liquid. Combined with theory calculation, the corresponding mechanism was systematically analyzed from oxygen vacancy induced electron doping.