Cyclotron spin-wave in the 2D electron system

The cyclotron spin-wave mode of a two-dimensional electron system have been investigated by inelastic light scattering. It is observed at small electron filling factors, (v～0.1, when the electron system is spin-depolarized. As long as the electron system becomes fully spin-polarized (v>0.2), the cyclotron spin-wave disappears from the inelastic light scattering spectra. It reenters at electron filling factors v>1. Over the range of electron filling factors of 1<v<2, the cyclotron spin-wave energy is insensitive to both the experimentally accessible in-plane momenta and the electron concentration, whereas its inelastic light scattering efficiency is strongly influenced by the spin polarization of the electron system.     

Electron Raman scattering in semiconductor quantum well wire of cylindrical ring geometry

We study the electron states and the differential cross section for an electron Raman scattering process in a semiconductor quantum well wire of cylindrical ring geometry. The electron Raman scattering developed here can be used to provide direct information about the electron band structures of these confinement systems. We assume that the system grows in a Ga As/Al0.35Ga0.65 As matrix. The system is modeled by considering T = 0 K and also a single parabolic conduction band, which is split into a sub-band system due to the confinement. The emission spectra are discussed for different scattering configurations, and the selection rules for the processes are also studied. Singularities in the spectra are found and interpreted.     

0.351μm激光辐照靶角度和时间分辨的侧向散射研究

 建立了一套角度和时间同时分辨的散射光诊断系统,利用星光Ⅱ装置输出的0.351μm激光辐照平面靶,研究了激光与靶作用产生的侧向散射光的时间行为,实验对金盘靶、CH膜靶和泡沫CH靶与激光作用产生的散射激光进行了研究,在多个角度获得了时间分辨的散射光信息,由角分布的结构得到了等离子体密度分布的一些重要信息。     

Electron states and electron Raman scattering in semiconductor double cylindrical quantum well wire

The differential cross section for an electron Raman scattering process in a semiconductor GaAs/AlGaAs double quantum well wire is calculated,and expressions for the electronic states are presented.The system is modeled by considering T = 0 K and also with a single parabolic conduction band,which is split into a subband system due to the confinement.The gain and differential cross-section for an electron Raman scattering process are obtained.In addition,the emission spectra for several scattering configurations are discussed,and interpretations of the singularities found in the spectra are given.The electron Raman scattering studied here can be used to provide direct information about the efficiency of the lasers.     

Coulomb effects in polarization transfer in elastic antiproton and proton electron scattering at low energies

The influence of Coulomb distortion on the polarization transfer in elastic proton and antiproton electron scattering at low energies is calculated in a distorted-wave Born approximation. For antiproton electron scattering Coulomb effects reduce substantially the polarization transfer cross-section compared to the plane-wave Born approximation, whereas for proton electron scattering they lead to a dramatic increase for kinetic proton lab energies below about 20keV.     

The effect of interface roughness scattering on low field mobility of 2D electron gas in GaN/AlGaN heterostructure

We report the results of our experimental and theoretical studies concerning the temperature dependence of electron mobility in a two dimensional electron gas (2DEG) confined at the GaN/AlGaN interface. Experimental mobility of about at 3.8 K remains almost constant up to lattice temperature , it then decreases rapidly down to about at . The results are discussed using a theoretical model that takes into account the most important scattering mechanisms contributing to determine the mobility of electrons in 2DEG. We show that the polar optical phonon scattering is the dominant mechanism at high temperatures and the acoustic deformation potential and piezoelectric scatterings are dominant at the intermediate temperatures. At low temperatures, the Hall mobility is confined by both the interface roughness (IFR) and ionised impurity scattering. The correlation length (Λ) and lateral size (Δ) of roughness at the GaN/AlGaN heterointerface have been determined by fitting best to our low-temperature experimental data.     

Maximizing the population inversion by optimizing the depopulation rate in far-infrared quantum cascade lasers

Electron–LO phonon and electron–electron transition rates are calculated for a three-level triple quantum well system to be employed as a laser operating in the far-infrared (30–300 μm) or terahertz (1–10 THz) region. The population ratio is determined from the ratio of the carrier lifetimes in levels |3〉 and |2〉. The most effective way of depopulating the lower laser level is found to be by LO phonon scattering to a strongly coupled state, as occurs at an anticrossing. Back scattering of carriers from level |1〉 to level |2〉 is significant at room temperature, but a population ratio of approximately 5 is possible nonetheless.     

Optical conductivity in a 2D model of the pseudogap state

A 2D model of the pseudogap state is considered on the basis of the scenario of strong electron scattering by short-range-order fluctuations of the “dielectric” (antiferromagnetic or charge density wave) type. A system of recurrence relations is constructed for a one-particle Green’s function and the vertex part, describing the interaction of electrons with an external field. This system takes into account all Feynman diagrams for electron scattering at short-range-order fluctuations. The results of detailed calculations of optical conductivity are given for various geometries (topologies) of the Fermi surface, demonstrating both the effects of pseudogap formation in the electron spectrum and the localization effects. The obtained results are in qualitative agreement with experimental data for underdoped HTSC cuprates.     

人工神经网络在HL-2A装置汤姆逊散射数据处理中的应用

人工神经网络是一种强大的非线性数据分析算法,其中的感知器神经网络第一次被用于处理HL-2A装置上汤姆逊散射系统的电子温度数据。采用输入层、隐藏层和输出层等三层神经网络结构,输入层为标定数据或测量数据,隐藏层使用sigmoid函数作为传递函数,输出层为电子温度值。从数据处理结果可以看出,该计算方法与传统的χ2最小值方法计算的结果吻合,能够得到可靠的电子温度数据。而且由于计算温度时采用矩阵计算,计算速度比使用χ2最小值法提高20倍以上,为将来利用汤姆逊散射测量的电子温度数据实现等离子体剖面实时反馈控制提供了可能。     

Transitions between the 2Pi1/2 and 2Pi3/2 spin-orbit components of NO induced by impact of slow electrons

The electron impact cross section for the transition between the 2Pi1/2 and 2Pi3/2 spin-orbit components of the ground electronic term of nitric oxide, separated by 15 meV, has been measured as a function of electron energy at a scattering angle of theta = 135 degrees. It is dominated by the 3Sigma- and the 1Delta resonances. Its magnitude is very large, at peak about equal to that of the elastic cross section. The elastic cross sections for the two components have also been determined.     

Interfacial charge current in the ferromagnet/two-dimensional electron gas junction with Rashba spin orbital interaction

We report a theoretical study on the interfacial electron transport in the ferromagnet/two-dimensional electron gas (FM/2DEG) hybrid junction at zero bias, where the Rashba spin-orbit interaction (RSOI) is considered in 2DEG region. It is shown that a nonzero charge current can spontaneously flow in the interface of the junction due to broken time reversal symmetry and spin-dependent scattering of electron at interface. This interfacial charge current can be modulated by system parameters such as the magnetization of FM, RSOI strength, and interface barrier, moreover, it can be optimized as the magnetization of FM in 2DEG plane is perpendicular to interface whereas it can vanish as the FM magnetization is parallel to interface.     

Eine Anordnung für Experimente zur Elektronenstreuung unterhalb 60 MeV

The facilities for electron scattering experiments at the Darmstadt electron linear accelerator (60 MeV at zero current) are described. They include an energy analyzing system with three 40° magnets and a 120° double focussing (n=0.5) magnetic spectrometer. Spectra of electrons scattered inelastically from carbon are presented up to 20 MeV excitation energy. For the scattering peaks, total half widths down to about 100 keV are obtainable at 52 MeV. Energies of excited levels can be measured with an accuracy of ±10 keV in favourable cases.     

电子入射角度对聚酰亚胺二次电子发射系数的影响

采用具有负偏压收集极的二次电子发射系数测试系统, 对聚酰亚胺样品的二次电子发射系数与入射电子角度和入射电子能量的关系进行了测量. 测量结果表明, 在电子小角度入射样品的情况下, 随着入射角度的增加, 二次电子发射系数单调增加, 并符合传统的规律, 但是在电子大角度入射时, 却与此不符合. 测量显示, 出现偏差时对应的临界电子入射角度随着入射电子能量的降低而减小. 采用简化的电子弹性散射过程和卢瑟福弹性散射截面公式对这种偏差的出现进行了分析, 并推导出修正后的二次电子发射系数的计算公式. 修正后的二次电子发射系数的计算结果更加符合实验结果.     

Elastic scattering of relativistic electrons by nuclei in the helicity representation

The partial-wave analysis of the scattering problem electron-nucleus is performed using helicities instead of the angular momentum of the electron. This proceeding leads to remarkable advantages in the treatment of the scattering process, especially in the numerical solution of the system of coupled radial differential equations: a) The matrix elements over the potential operators are independent of the total angular momentum. b) Instead of 6-j symbols etc., only very simple algebraic expressions are to be evaluated. c) Due to special properties of the system computing time is reduced for higher values of the nuclear spin by an amount proportional to about the order of the dimension of the system.     

30-5000eV的电子被若干分子散射的总截面计算的一种修正势方法

利用可加性规则，使用Hartree-Fock波函数，采用由束缚原子概念修正过的复光学势，在30~5000eV这一较大的能域内对电子被N2、NO、NO2、CH4、CF4、CF3H、C2H2及C2H4散射的总截面进行了计算。束缚原子不同于自由原子之处，是束缚原子概念考虑了不同分子中的不同的电子云重叠情况，并根据电子云的重叠情况对复光学势进行修正。文中，将定量的计算结果与实验结果及其它理论计算结果进行了比较，结果显示出在30~5000eV内，计算结果与实验结果及其它理论计算结果间有较好的一致性。同时结果也表明，在较低的能量下，尤其是当入射电子的能量低于500eV时，利用被束缚原子概念修正过的复光学势进行计算得到的结果，要比利用未被束缚原子概念修正的复光学势计算得到的结果更接近于实验值。因此，在复光学势中考虑电子云的重叠效应可改善电子被分子散射的总截面的计算精度。     

The effect of multiple electron-electron scattering on the energy distribution of electrons in a correlated pair

A unit event of electron-electron scattering in LiF layers is studied by correlation spectroscopy of scattered electrons. The energy distribution of electrons in a correlated pair when a 15-to 55-eV free electron is scattered by a valence electron of LiF is studied. It is shown that single electron-electron scattering prevails and the distribution is uniform when the energy of the primary electron is below 25 eV. As the energy of the primary electron increases, the formation of correlated pairs of electrons with equal energies becomes the most probable. With the energy of the primary electron above 40 eV, the pairs with substantially different electron energies dominate. Such evolution of the energy distribution of the electrons in the pair stems from the fact that first one and then the other electron of the pair successively takes part in electron-electron scattering. A phenomenological model for the single scattering and double scattering of primary electrons in LiF films is considered. Results obtained indicate that the strengths of single scattering and double scattering channels become comparable at electron energies above 25 eV.     

Temperature dependence of the inelastic scattering in a GaAs/n-AlGaAs selectively doped heterojunction with InGaAs quantum dots

Inelastic scattering processes of two-dimensional electron gas (2DEG) have been investigated in a inverted GaAs/n-AlGaAs heterojunction with self-organized InGaAs quantum dots (QDs) embedded near the 2DEG channel where the electron population in the QDs is controllable by the gate voltage V_g. By analyzing magnetoresistance, the inelastic scattering time τ_ε have been evaluated as functions of V_g at 0.6, 0.8, 1.2, and 1.7 K. It is found that τ_ε increases with V_g below 0.8 K and decreases above 1.2 K, which suggests that the dominant scattering mechanisms below 0.8 K and above 1.2 K are different. To interpret this behavior, we have calculated the inelastic scattering time theoretically. It is found that the experimental data are well explained by a theoretical model where a 2D electron is considered to be inelastically scattered both by the other 2D electrons and by the trapped electrons in QDs. It is also found that the 2DEG–2DEG scattering is dominant at low temperature, while the 2DEG-QDs scattering becomes important as the temperature increases.     

Spin-dependent electron-proton scattering in the Delta-excitation region

We report on measurements of the cross section and provide first data on spin correlation parameters A(TT') and A(TL') in inclusive scattering of longitudinally polarized electrons from nuclear-polarized hydrogen. Polarized electrons were injected into an electron storage ring operated at a beam energy of 720 MeV. Polarized hydrogen was produced by an atomic beam source and injected into an open-ended cylindrical cell, located in the electron storage ring. The four-momentum transfer squared ranged from Q2 = 0.2 GeV(2)/c(2) at the elastic scattering peak to Q2 = 0.11 GeV(2)/c(2) at the Delta(1232) resonance. The data provide a stringent test of pion electroproduction models.     

Scattering processes in a two-dimensional semimetal

The scattering mechanisms in a two-dimensional semimetal based on a HgTe quantum well, where the electron and hole densities are controlled over a wide range by applying the gate voltage, have been studied. It is shown that impurity scattering prevails in this system at low temperatures. Interparticle scattering (in this case, electrons and holes) has been observed to directly affect the resistance of the metal.     

中高能电子被氟代甲烷散射的总截面计算

利用可加性规则,使用Hartree-Fock 波函数,采用被束缚原子概念修正过的复光学势,首次在100～5 000eV内对电子被具有较多电子数的氟代甲烷分子散射的总截面进行了计算,且将计算值与实验值及经验公式进行了比较,得出了被束缚原子概念修正过的复光学势可成功用于"电子-氟代甲烷"散射总截面计算的结论;研究了"电子-氟代甲烷"的散射总截面与目标分子总电子数及电子入射能量间的关系,初步分析了结构因子与总电荷数相关的原因,并指出了对复光学势进行进一步修正时应遵循的原则.