Formation of Ohmic contacts on laser irradiated n-type 6H-SiC without thermal annealing

In this work, KrF excimer laser irradiation of n-type SiC is used to form Ohmic contacts at the interfaces between the irradiated SiC and various types of metals with different work functions without subsequent thermal annealing. Ohmic contacts are formed between laser-treated 6H-SiC and Ti at a laser fluence of 0.7 J/cm². Moreover, in the fluence range of 0.7–1.3 J/cm², Ohmic characteristics are also observed between irradiated 6H-SiC and Au, which is a representative inert metal. The laser-induced heavy doping effect reduces the thickness of the Schottky barrier between the metal and SiC, and the formation of graphene sheets on the irradiated SiC surface reduces the barrier height, resulting in the direct formation of Ohmic contacts. Our findings thus demonstrate the potential of this laser treatment method to achieve Ohmic contacts between n-type SiC and a broad range of metal electrodes without requiring high-temperature annealing.     

退火温度和退火气氛对Ni/Au与p-GaN之间欧姆接触性能的影响

研究了不同退火温度和气氛对Ni/Au与p-GaN之间欧姆接触性能的影响. 采用圆形传输线模型方法得到不同退火温度和不同退火气氛下的比接触电阻率. 结果表明, 较适宜的退火温度为500 ℃左右, 退火温度太高或太低都会导致比接触电阻率的增大; 较适宜的退火气氛为适量含氧的氮气气氛, 且氧气含量对比接触电阻率大小的影响并不显著. 经过对退火条件的优化, 得到的比接触电阻率可达7.65×10^-4 Ω·cm². 关键词： p-GaN 欧姆接触 圆形传输线模型 快速热退火     

离子注入和固相外延制备Si1-x-yGexCy半导体薄膜

用等离子体增强化学气相淀积(PECVD)生长了200nm的SiGe薄膜,然后将C离子注入SiGe层,经两步热退火处理制备了Si1-x-yGexCy三元合金半导体薄膜.应用卢瑟福背散射(RBS),傅里叶变换红外光谱(FTIR)和高分辨率x射线衍射(HRXRD)研究了薄膜的结构和外延特性.发现C原子基本处于替代位置,C原子的掺入缓解了SiGe层的压应变 关键词： Si1-x-yGexCy薄膜 离子注入 固相外延     

不同退火方式对Ni/SiC接触界面性质的影响

采用快速热退火(rapid thermal annealing, RTA)法和脉冲激光辐照退火(laser spark annealing, LSA)法, 在n型4H-SiC的Si面制备出Ni电极欧姆接触. 经传输线法测得RTA样品与LSA样品的比接触电阻分别为5.2×10^-4 Ω·cm², 1.8× 10^-4 Ω·cm². 使用扫描电子显微镜、原子力显微镜、透射电子显微镜、拉曼光谱等表征手段, 比较了两种退火方式对电极表面形貌、电极/衬底截面形貌和元素成分分布、SiC衬底近表层碳团簇微结构的影响. 结果表明, 相比于RTA, LSA法制备出的欧姆接触在电极表面形貌、界面形貌、电极层组分均匀性等方面都具有明显优势, 有望使LSA成为一种非常有潜力的制备欧姆接触的退火处理方法.     

Study on the measurement accuracy of circular transmission line model for low-resistance Ohmic contacts on III-V wide band-gap semiconductors

The accuracy and error propagation for determining the low specific contact resistance of Ohmic contacts on III-V wide band-gap semiconductors based on the circular transmission line model have been analyzed and the validity of this method is discussed in detail. The accuracy is more susceptible to the factors including data fitting method, electrical measurement technique and contact area correction. By using the equations of the original circular transmission line model to extract the fitting parameters, the calculation accuracy is much improved and the inapplicability of the linear least-square fitting is prevented. To further improve the accuracy, a four-probe current-voltage measurement technique was adopted to reduce the parasitic series resistances and the uncertainty bound, especially for the Ohmic contact with low sheet resistance of the semiconductor. Moreover, we have studied the size effect of contact pads of patterns and demonstrated that contact area correction is necessary for the semiconductor with high sheet resistance. A comprehensive error analysis is also performed to fully understand all the impact factors on this advanced method of specific contact resistance measurement, which is benefit for device performance evaluation and failure analysis.     

Modeling of the drain-induced barrier lowering effect and optimization for a dual-channel 4H silicon carbide metal semiconductor field effect transistor

A new analytical model to describe the drain-induced barrier lowering (DIBL) effect has been obtained by solving the two-dimensional (2D) Poisson's equation for the dual-channel 4H-SiC MESFET (DCFET). Using this analytical model, we calculate the threshold voltage shift and the sub-threshold slope factor of the DCFET, which characterize the DIBL effect. The results show that they are significantly dependent on the drain bias, gate length as well as the thickness and doping concentration of the two channel layers. Based on this analytical model, the structure parameters of the DCFET have been optimized in order to suppress the DIBL effect and improve the performance.     

Improved electrical and thermal properties of Ag contacts for GaN-based flip-chip light-emitting diodes by using a NiZn alloy capping layer

We investigate the effect of a 100 nm-thick NiZn alloy (10 wt% Zn) capping layer on the thermal and electrical properties of Ag reflectors (200 nm) for flip-chip light-emitting diodes (LEDs). It is shown that the introduction of the NiZn capping layer minimizes the formation of interfacial voids and surface agglomeration. Furthermore, LEDs fabricated with the NiZn-capping-layer-combined contacts produce better output power as compared to those with the Ag only reflectors. For example, the LEDs with the 400 ^°C-annealed Ag/NiZn contacts give higher output power by ∼36% than those with the 400 ^°C-annealed Ag only contacts. X-ray photoemission spectroscopy and Auger electron spectroscopy measurements are performed to understand the improved electrical properties of the LEDs fabricated with the NiZn-capping-layer-combined Ag contacts.     

Modeling of the drain-induced barrier lowering effect and optimization for a dual-channel 4H silicon carbide metal semiconductor field effect transistor

A new analytical model to describe the drain-induced barrier lowering(DIBL) effect has been obtained by solving the two-dimensional(2D) Poisson’s equation for the dual-channel 4H-SiC MESFET(DCFET).Using this analytical model,we calculate the threshold voltage shift and the sub-threshold slope factor of the DCFET,which characterize the DIBL effect.The results show that they are significantly dependent on the drain bias,gate length as well as the thickness and doping concentration of the two channel layers.Based on this analytical model,the structure parameters of the DCFET have been optimized in order to suppress the DIBL effect and improve the performance.     

The fabrication of nickel silicide ohmic contacts to n-type 6H-silicon carbide

This paper reports that the nickel silicide ohmic contacts to n-type 6H-SiC have been fabricated. Transfer length method test patterns with NiSi/SiC and NiSi硅化镍;欧姆触点;n型碳化硅;制造;能带;带隙Project supported by the National Basic Research Program of China (Grant No~2002CB311904), the National Defense Basic Research Program of China (Grant No~51327010101) and the National Natural Science Foundation of China (Grant No~60376001).2006-09-192006-10-30This paper reports that the nickel silicide ohmic contacts to n-type 6H-SiC have been fabricated. Transfer length method test patterns with NiSi/SiC and NiSi2/SiC structure axe formed on N-wells created by N^＋ ion implantation into Si-faced p-type 6H-SiC epilayer respectively. NiSi and NiSi2 films are prepared by annealing the Ni and Si films separately deposited. A two-step annealing technology is performed for decreasing of oxidation problems occurred during high temperature processes. The specific contact resistance Pc of NiSi contact to n-type 6H-SiC as low as 1.78× 10^-6Ωcm^2 is achieved after a two-step annealing at 350 ℃for 20 min and 950℃ for 3 min in N2. And 3.84×10-6Ωcm^2 for NiSi2 contact is achieved. The result for sheet resistance Rsh of the N＋ implanted layers is about 1210Ω/□. X-ray diffraction analysis shows the formation of nickel silicide phases at the metal/n-SiC interface after thermal annealing. The surfaces of the nickel silicide after thermal annealing are analysed by scanning electron microscope.     

The effect of a surface layer capping p-InGaN/p-GaN superlattices on the contact to p-GaN

In this study, the influence of the surface layer (p-InGaN or p-GaN) capping p-InGaN/p-GaN superlattices (SLs) on the contact to p-type GaN was investigated. It was found that the specific contact resistance (_ρc)$\left({\rho }_c\right)$ to p-type GaN is lower when using p-InGaN as the surface layer. The lowest value of _ρc${\rho }_c$ was 1.99×10⁻⁴ Ω cm² at room temperature. It was also found that low temperature growth of the p-GaN layers in the SLs is beneficial for lowering the ohmic contact resistance. Unlike Ni/Au deposited directly on p-GaN (without the strained p-InGaN/p-GaN SLs), Ni/Au deposited on p-InGaN/p-GaN SLs produces ohmic behavior even before annealing.     

Formation of tubular silicon carbide from a carbon–silica material by using a reactive replica technique: infra-red characterisation

Thermal treatment of carbon fibres covered with silica prepared by a sol–gel technique leads to the formation of a tubular silicon carbide material keeping the morphology of the carbon source. The conversion of silica into silicon carbide, its kinetics and the structure of the final material were mainly determined by infra-red (IR) spectroscopy. The analytical results were crossed examined with those obtained by gravimetric and microscopic methods. In particular, it is shown, here, that IR-spectroscopy is a suitable technique to quantitatively determine the amount of SiC formed during the heat treatment of a C/SiO₂ material.     

一种无损测量多层半导体材料厚度的新方法

通过研究GaAs半导体材料厚度对量子效率的影响入手,提出一种利用分光光度计直接测量多层半导体厚度的新方法.根据光学干涉原理,将分光光度计测量出的反射率波谷值代入编写的JAVA程序进行计算,从而可直接得出多层半导体材料厚度,使用该方法得到的半导体层厚度误差＜9%,满足测试精度要求.此方法可用于半导体外延片材料分析、工艺提高以及批量无损测量.     

电流型大面积PIN探测器

研制了灵敏区面积为40,50和60mm,耗尽层厚度为200—300μm的电流型大面积薄型PIN半导体探测器,并对其物理性能进行了测量.测试和应用表明,这些探测器性能稳定,漏电流符合使用要求.与市场上的大面积PIN半导体探测器相比,这些探测器主要在几百伏偏压下工作在电流模式,但也可用于计数模式,而目前的商用产品仅适用于计数测量. 关键词： 半导体探测器 大面积 电流型     

等离子体浸没离子注入制备黑硅抗反射层及其光学特性研究

表面织构是一种有效降低表面反射率、提高硅基太阳能电池效率的方法. 采用等离子体浸没离子注入的方法制备了黑硅抗反射层.分别通过原子力显微镜和紫外-可见-近红外分光光度计对黑硅样品表面形貌和反射率进行分析, 结果发现黑硅样品表面布满了高度为0—550 nm的山峰状结构, 结构层中硅体积分数和折射率随抗反射层厚度增加而连续降低. 在300—1000 nm波段范围内,黑硅样品的加权平均反射率低至6.0%. 通过传递矩阵方法对黑硅样品反射谱进行模拟,得到的反射谱与实测反射谱非常符合.     

有限尺寸方靶等离子体离子注入动力学的三维粒子模拟研究

采用三维粒子模拟模型研究了有限尺寸方靶等离子体浸没离子注入过程中的鞘层动力学行为,得到了鞘层尺寸和方靶表面的注入剂量、注入能量以及注入角度等信息,并与二维无限长方靶注入结果进行了对比.模拟结果表明,与无限长方靶不同,有限尺寸方靶周围鞘层很快扩展为球形,但鞘层厚度明显减小.在模拟的50ω^-1_pi时间尺度内靶表面注入剂量很不均匀,中心区域注入剂量最小,四个边角附近位置注入剂量最大.这种剂量不均匀性是由于鞘层扩展为球形,使得鞘层内离子被聚焦并注入到边角附 关键词： 等离子体浸没离子注入 数值模拟 三维粒子模拟 有限尺寸方靶     

介质靶表面的充电效应对等离子体浸没离子注入过程中鞘层特性的影响

针对等离子体浸没离子注入技术在绝缘体表面制备硅薄膜工艺，采用一维脉冲鞘层模型描述介质靶表面的充电效应对鞘层厚度、注入剂量及靶表面电位等物理量的影响.数值模拟结果表明：随着等离子体密度的增高，表面的充电效应将导致鞘层厚度变薄、表面电位下降以及注入剂量增加，而介质的厚度对鞘层特性的影响则相对较小. 关键词： 等离子体浸没离子注入 脉冲鞘层 绝缘介质 充电效应     

Analytical solution to a mode of mixed elastohydrodynamic lubrication with mixed contact regimes: Part II—Considering the contact adhering layer effect in the inlet zone

The present paper presents the researches succeeding the first part of the paper [Y.B. Zhang, Analytical Solution to A Mode of Mixed elastohydrodynamic lubrication with Mixed Contact Regimes: Part I—Without Consideration of Contact Adhering Layer in the Inlet Zone. Journal of Molecular Liquids, 2006, Vol.117, (10.1016/j.molliq.2006.04.006)], which analyzed one mode of mixed elastohydrodynamic lubrication with mixed contact regimes for the relatively heavy load and low rolling speed which make the conventional hydrodynamic lubrication occur in the inlet zone while make the physical adsorbed layer boundary lubrication occur in the Hertzian zone, based on the Newtonian fluid model. The present paper presents analysis to other two modes of mixed EHL with mixed contact regimes for relatively heavy loads, low rolling speeds and Newtonian fluids, where the conventional hydrodynamic lubrication, physical adsorbed layer boundary lubrication and oxidized chemical layer boundary lubrication can simultaneously occur in the inlet zone while the oxidized chemical layer boundary lubrication or the fresh metal-oxidized chemical boundary layer dry contact occur in the Hertzian zone, considering the contact adhering layer effect in the inlet zone. The present analysis is also extended to the first mode of mixed EHL with mixed contact regimes as analyzed in Part I [Y.B. Zhang, Analytical Solution to A Mode of Mixed elastohydrodynamic lubrication with Mixed Contact Regimes: Part I—Without Consideration of Contact Adhering Layer in the Inlet Zone. Journal of Molecular Liquids, 2006, Vol.117, (10.1016/j.molliq.2006.04.006)] when the contact adhering layer effect in the inlet zone is considered. Results of contact pressures, film thicknesses, load partitions in the contact and characteristic rolling speeds for approaching to zero averaged hydrodynamic film thickness in the Hertzian zone are obtained from this analysis respectively as functions of the contact adhering layer thickness in the inlet zone. The results show that the contact adhering layer effect in the inlet zone in the present EHL is reduced with the increase of load; At large loads, this effect may be negligible; At small loads, it may be very significant. The results also show that at low rolling speeds, when the contact adhering layer effect in the inlet zone is considered, the load-carrying capacity of the present EHL contact is increased especially for small loads. This means that at low rolling speeds the contact adhering layer effect in the inlet zone may reduce the elastohydrodynamic lubrication deviation from classical EHL theory predictions especially for small loads.     

Analytical solution to a mode of mixed elastohydrodynamic lubrication with mixed contact regimes: Part I. Without consideration of contact adhering layer in the inlet zone

In 2005, Zhang presented a Grubin-like inlet zone analysis to the isothermal line contact elastohydrodynamic lubrication under relatively heavy loads when the hydrodynamic film thickness in the Hertzian zone approaches zero and the EHL fluid is Newtonian [Zhang, Y.B. A justification of the load-carrying capacity of elastohydrodynamic lubrication film based on the Newtonian fluid model. Industrial Lubrication and Tribology, 2005, Vol. 57, pp. 224–232]. His results showed that in this EHL, when the rolling speed is lower than the characteristic rolling speed (U_ch =) 0.0372W^1.50/G, the Hertzian zone is in physical adsorbed layer boundary lubrication while the inlet zone is in conventional hydrodynamic lubrication. This mode of EHL represents a mode of mixed EHL with mixed contact regimes, where hydrodynamic films with different rheological behaviors occur in different areas of the contact. The present paper presents an analysis to this mode of mixed EHL by using the Grubin type method when the contact adhering layer in the inlet zone is neglected. Pressures, film thicknesses and load partition in the contact are obtained from this analysis. It is also found that the formula for the characteristic rolling speed U_ch = 0.0372W^1.50/G obtained by Zhang [Zhang, Y.B. A justification of the load-carrying capacity of elastohydrodynamic lubrication film based on the Newtonian fluid model. Industrial Lubrication and Tribology, 2005, Vol. 57, pp. 224–232] may be valid for the dimensionless load W > 1.0E−7, while it may be invalid for the dimensionless load W < 1.0E−8. In part II [Zhang, Y.B. Analytical solution to a mode of mixed elastohydrodynamic lubrication with mixed contact regimes: Part II. Considering the contact adhering layer effect in the inlet zone. Journal of Molecular Liquids, 2006, Vol. 117. (doi:10.1016/j.molliq.2006.04.007)] will be presented an analysis to other two modes of mixed EHL with mixed contact regimes for relatively heavy loads, low rolling speeds and Newtonian fluids, where the conventional hydrodynamic lubrication, physical adsorbed layer boundary lubrication and oxidized chemical layer boundary lubrication can simultaneously occur in the inlet zone while the oxidized chemical layer boundary lubrication or the fresh metal-oxidized chemical boundary layer dry contact occur in the Hertzian zone, considering the contact adhering layer effect in the inlet zone.     

Analytic approach to the small-signal frequency response of saturated semiconductor optical amplifiers using multisection model

An analytic solution derived by multisection model to the small-signal frequency response (SSFR) of wavelength conversion based on cross-gain modulation (XGM) in semiconductor optical amplifiers (SOAs) is presented. The result contains details that can affect the characteristics of SSFR significantly more than previous ones.     

Formation of diamond-like carbon (DLC) film on the NiTi alloys via plasma immersion ion implantation and deposition (PIIID) for improving corrosion resistance

NiTi alloys are potentially useful in biomedical application due to their unique superelasticity and shape memory effect. However, the materials are vulnerable to surface corrosion and the most serious issue is out-diffusion of toxic Ni ions from the substrate into body tissues and fluids. In this paper, Diamond-like carbon (DLC) film is fabricated on the NiTi alloys using plasma immersion ion implantation and deposition (PIIID) at room temperature to improve their corrosion resistance and block the out-diffusion of the Ni ions. The results show that the DLC films cannot only improve the corrosion resistance of the NiTi substrate, but also effectively suppress the Ni ions release from the substrate. The reason that the corrosion resistance of the coated samples is markedly improved due to the DLC films formation is systematically investigated.