High repetition rate CH4 laser

A 16-m CF₄ laser oscillator has operated at 1 kHz in a cooled static cell. Pump energies required from the low pressure, Q-switched, cw discharge CO₂ laser were as low as 60 J. The laser cavity employed a multiple-pass off-axis path resonator in a ring configuration. CF₄ laser power at 615 cm^–1 and a 1-kHz repetition rate exceeded 300 W.     

GeO2-Core/SiO2-cladding optical fibers made by MCVD process for stimulated raman applications

GeO₂-core/SiO₂-cladding optical fibers (GESI fibers) and liquid core fibers with a cladding region of GeO₂ were designed and fabricated by the MCVD process. The attenuation level of the GESI fibers was about 0.5 dB/m in the near-infrared wavelength region at 2.35 m. GESI fibers showed a stimulated Raman scattering (SRS_ spectrum with six to seven Stokes shifts of 430 cm^–1. The spectrum of SRS expanded to 1.6 m when a Nd: YAG laser at a wavelength of 1.064 m was used.     

Towards slow μ− production via muon catalyzed fusion

Slow ^– production via dd-CF using a two-layer arrangement is investigated. To determine its feasibility, experimental measurements are now in progress using the muonic X-ray detection method. The following experimental steps are being considered: (1) measurement of the number of ^– stopped inside a solid H₂/D₂ layer by detecting p K X-rays, (2) hot d emission detection by placing a secondary target at a distance of 10–30 mm from the layer and by detecting specific delayed X-rays, (3) measurement of the disappearance of d emission as the added D₂ layer is increased, (4) dd-CF measurement by detecting fusion protons, and (5) slow ^– emission detection. Results of the initial test experiment are presented.     

Microstructure of aluminium-copper thin films and its relation to electromigration

The microstructure of polycrystalline aluminium — 7·6 wt % copper thin films evaporated from the starting Al-Cu alloy was studied using electron microscopy and microanalysis. The structural properties of films were confronted with electromigration lifetime measurements of Al-Cu thin film conductors. In the films Al₂Cu precipitates were observed. Thermodynamically stable -Al₂Cu precipitates were found at grain boundaries, triple points and on the film surface. Within the grains -Al₂Cu precipitates were detected. When the temperature of deposition and/or the time of annealing of the films at 480 °C in nitrogen increased, the growth of grains and of the total volume of the precipitate phase was observed. Under these conditions precipitates tended to grow preferentially at the film surface and they ceased to influence the grain size distribution. The distribution approached then the log-normal distribution function. With regard to the structural investigations it is anticipated that the best electromigration resistance among the studied samples should possess conductors deposited at 250 °C as well as conductors deposited at 150 °C and 250 °C and annealed 10 min at 480 °C. The lifetimes of conductors having this type of microstructure and tested at the current density of 3×10⁶ A/cm² had values of 210÷3500 hrs, corresponding to the testing temperature of 150 °C. Higher lifetimes were observed with wider (20 m) and shortest (120 m) conductors encapsulated in packages filled with nitrogen. The activation energy for the failure process was 0·65 eV in this case.     

Y1Ba2Cu3O7-δ thin films from KrF laser ablation with substrate heating and in situ patterning by CO2 laser radiation

Y₁Ba₂Cu₃O_7– thin films were deposited by KrF laser ablation while replacing conventional contact heating by cw CO₂ laser irradiation of the substrate front surface. The HTSC films obtained on (100)ZrO₂ showed T _c(R=0)=90 K, T(90–10%)=0.5 K, j _c=2.5 × 10⁶ A/cm², a sharp transition in the ac susceptibility X(T), and pure c-axis orientation. Micrographs of thin films (< 0.5 m) showed a smooth morphology while thick films (>1 m) contained many crystallites sticking in the bulk material. Furthermore, in situ patterning was achieved during deposition by local laser heating of a selected substrate surface area. The resulting planar films contained amorphous, semiconducting parts only 1 mm or less apart from crystalline material showing the above HTSC quality.Presented at LASERION '91, June 12–14, 1991, München (Germany)     

Positron mobility in polyethylene in the 60–400 K temperature range

We have determined the positron mobility (₊) in polyethylene samples (67.2% crystalline, glass transition temperatureT _g=151 K) in the 64–400 K temperature range by Doppler shift measurements. A method based on the simulataneous observation of two lines from¹³³Ba and¹³⁷Cs radioactive sources together with the positron annihilation line, was employed to measure the Doppler shift of the 511 keV line as a function of the electric field applied to the samples. With this method we were able to measure at the same time the drift velocity of positrons and theS parameter. This parameter is very important in the interpretation of the mobility trend in samples where the positron states change with temperature. The positron mobility was corrected for positronium formation. ₊ at 64 K is 31.7±0.8 cm² V^–1 s^–1 then decreases up to 123 K, increases at 148 K and decreases again up to 170 K (₊=26.9±0.8 cm² V^–s^–). This sharp change in mobility is centred around the glass transition temperature of our samples. Then the mobility remains almost constant up to 230 K. From 250 K to 377 K, ₊ increases and reaches the value of 38.4±1.0 cm² V^–1s^–1. The corrected experimental data were well fitted by a simple model taking into account scattering and a thermally activated process (hopping mechanism).     

High-power source of coherent picosecond light pulses tunable from 0.41 to 12.9 μm

We report a high-power source of coherent picosecond light pulses based on optical parametric generation and amplification in LiB₃O₅ and AgGaS₂ crystals. The spectral range of this continuously tunable source covers the visible, near-infrared and medium-infrared spectrum from 0.41 to 12.9 m. An optical parametric generator and amplifier, consisting of two type-I phase-matched LiB₃O₅ crystals and a diffraction grating, is pumped by the third harmonic of a picosecond Nd:YAG laser and provides spectrally narrow, high-power pulses from 0.41 to 2.4 m. Energy conversion efficiencies up to 16 percent are achieved. The pulse duration is about 14 ps, the bandwidth between 10 and 30 cm^–1. The tuning range is extended to 12.9 m by mixing the infrared output between 1.16 and 2.13 m with the fundamental of the Nd:YAG laser in type-I-phase-matched AgGaS₂ crystals. Up to 25 percent of the pulse energy at 1.064 m is converted into parametric infrared pulses. Bandwidths between 3 and 8 cm^–1 and a pulse duration of approximately 19 ps are measured for these pulses. We also observe a retracing behaviour in the tuning curve of AgGaS₂ not reported before.     

Optical and Photoelectric Inhomogeneity of CdTe:V Crystals

The optical and photoelectric properties of CdTe:V crystals with the doping impurity concentration N _V = 5·10¹⁸–5·10¹⁹ cm^–3 are investigated and the possibility of their use as a photorefractive material is considered. As is seen from the spectra of optical transmission, the crystals of both types possess high transparency (50–65%), which for CdTe:V specimens with N _V = 5·10¹⁹ cm^–3 decreases sharply and in the range 12–14 m does not exceed 5%, whereas for CdTe:V crystals with vanadium concentration of 5·10¹⁸ cm^–3 such a value of transmission remains unchanged up to 25 m, implying a good optical quality of the latter crystals and their possible application in the spectral range 1.06–1.25 m in modern fiber-optic communication lines.     

Nearest neighbor effect on capture cross sections measured in IR phototransients on Si:In

The extrinsic photoconductive decay at T=20–100 K is analyzed in FZ-grown Si: In material after pulsed irradiation by a PbSSe infrared laser (=4 m). Trapping time constants (=10 ns-100 s) are resolved for the prevalent In acceptor (N _In=10¹⁶–10¹⁷ cm^–3) and for additional shallow acceptors B, Al, and the X(In)-center present at low concentrations (N=10¹²–10¹⁴ cm^–3). Hole capture cross sections determined for the acceptor levels show a large scatter over up to 4 orders of magnitude. It is shown that the capture cross section is dependent on all the dopant concentrations present in the sample due to nearest neighbor interaction. Due to the formation of donor-acceptor dipoles, the capture cross section assumes low values. A model calculation of the interaction based on only fundamental parameters of Si is in accordance with the experimental data within the experimental error. The hole capture cross sections for isolated acceptors are _p=1×10^–12, 1×10^–14, 1×10^–13, 2.5×10^–13 cm² for indium, X-center, aluminum, and boron at the temperatures T=95 K, 100 K, 70 K, 45 K, respectively.     

Positron annihilation anomaly in the high-temperature superconductor YBa2Cu3O7−x

We have measured the ac susceptibility of a wire with a Nb core (1.27 mm diam.) and a Cu cladding (0.37 mm thickness) atT50 K andB0.1 mG. Due to its proximity to Nb, the Cu becomes fully superconducting. From the data we find a breakdown fieldH _b =1.2 (mG) and a coherence length =2.2T ^–1/2 (m) for the Cu, as well as a field penetration depth -34T ^1/2 (m) at the Cu/Nb interface.     

Collisional excitation X-ray laser experiments in plasmas produced by 0.53-μm and 0.35-μm laser light

Recent Ne- and Ni-like X-ray laser experiments carried out at the Centre d'Etudes de Limeil-Valenton (CEL-V) are reviewed. A variety of experiments in Ne-like X-ray lasers were performed; here we discuss measurements of soft X-ray amplification in Ge (Z=32) and Sr (Z=38) plasmas. In Ge plasmas produced by 0.53-m laser light at an irradiance of 6.0×10¹³ W/cm², gains between 2.2–2.5 cm^–1 on the 232.2 and 236.2 Å J=2–1 lines and a gain of 1.0 cm^–1 on the 196.1 Å J=0–1 line were measured. In addition, gains of 4.4 cm^–1 and 4.0 cm^–1 have been demonstrated on the J=2–1 transitions at 164.1 and 166.5 Å in Nelike Sr at laser intensities of 1.3×10¹⁴ W/cm². The effects of pumping the Ne-like Se X-ray laser with 0.35-m laser light have also been investigated; the Se lasing spectra is similar to that obtained with 0.53-m light. Experiments have also been carried out to optimize the gain of the 50.3 Å Ni-like Yb (Z=70) J=0–1 line. For Yb, no significant increase in gain over that previously reported was seen, but the time history of the Ni-like Yb X-ray laser was measured for the first time. Finally, attempts to extrapolate the Ni-like results to shorter wavelength were made using Ta (Z=73), W (Z=74), and Re (Z=75). No definitive observation of the Ni-like J=0–1 lasing lines was made in these experiments.     

Feasibility of an experiment to determine the branching ratio for the emission of a heavy neutrino after muon capture in3He

The triton energy of the muon capture reaction ³He t+v, where ³ He is the ground state of muonic³He, has been measured in order to investigate a possible heavy v admixture into the flavour with high sensitivity. ³ He has been formed via the pd fusion reaction by stopping ^– in an ionization chamber (IC) filled with an H/D gas mixture of 3% D concentration at a pressure of 161 bar. In a first short experiment 650 triton events were observed yielding an upper limit for the -heavy v mixing strength of 2.3×10^–3 atE _0v=60 MeV.     

Negative muon precession in nuclei with spin

Polarized negative muons were stopped in various materials containing nuclei with nonzero spin. The TF-SR precession signal of theF ⁺ hyperfine state (frequencyv ₊ > 0) was pronounced for ^–Li and ^–Be, faint for ^–Cl (in NiCl₂), and undetectable for ^–F (in CaF₂ or NiF₂) and ^–P. TheF ^– signal (frequencyv _– < 0) was observed clearly for ^–Be, ^–Al and ^–Na, marginally for ^–K, ^–V and ^–Nb, and not at all for ^–Ga (at 4 kOe) or ^–Co (ferrromagnetic, zero field). In the heavier elements theF ^– signal is fed by transitions from theF ⁺ to theF ^– state at a rateR, as long asR(v ₊ –v _–). [See separate paper on ^–Al in these Proceedings, p. 879.]I am grateful to Alex Schenck and Bruce Patterson for the loan of equipment and samples, to Fred Gygax for helping set up the apparatus, to Jun Imazato for help with the experiment, and to Toshi Yamazaki and Tak Suzuki for valuable comments. I am also indebted to SIN for several weeks of free ^– beam time and to SIN, BOOM, and the University of Tokyo for free time on their VAX computers, which were kept busy for several months in the analysis.     

Luminescence of ZnO Having a Superstoichiometric Content of Oxygen

Using a unique method of radical-beam heteroepitaxy (RBHE) based on annealing of the crystals of the II–VI (ZnSe) compounds in a flow of radicals of a metalloid component — oxygen O — ZnO layers with a superstoichiometric content of oxygen were obtained. The conductivity of the layers = 10² ·cm, the mobility of the holes = 23 cm²/V·sec, and the concentration N _A = 10¹⁵ cm^–3. The luminescence spectra of pure ZnO single crystals and those doped with Li and Na, both treated by the RBHE method, are studied at helium temperatures. The luminescence centers associated with the intrinsic defects (V _Zn) are identified.     

R branch tuning characteristics of the13CH3F Raman FIR laser

Summary We described a¹³CH₃F Raman laser pumped by a grating tuned 20 atmospheres CO₂ laser. The emission characteristics of the¹³CH₃F laser extends from 14 cm^–1–35 cm^–1 and from 49 cm^–1–72 cm^–1; about 65% of these frequency ranges can be covered with tunable radiation. The characteristics shows a strong dependence on the rotaional quantum numbers of the states involved in the Raman laser transitions and, within each tuning interval, on the frequency offset with respect to the frequencies of resonant transitions. We obtained, at 51 cm^–1, a maximum FIR laser pulse energy of about 800 J (at a pump energy of 200 mJ), corresponding to a photon conversion of about 8%. In some cases we have observed simultaneous emission at a Raman and a cascade frequency. In addition, FIR emission power dependence on¹³CH₃F gas pressure and pump pulse power were investigated for different J quantum numbers.     

The paramagnetic state (μ+e−) in silicon and tellurium at high temperature

The paramagnetic state (⁺e^–) in Si and Te was observed in a longitudinal magnetic field. The mean lifetimes of these states were obtained: _Si = 1.45(3) s, _Te = 12.5(8) s at 290 K, _Te = 12(2) s at 250 K.     

The oscillator representation and the stability of three-body Coulomb systems

Within nonrelativistic quantum mechanics the Wick-ordering method, called the oscillator representation, is suggested for calculating the energy spectrum for a wide class of potentials allowing the existence of a bound state. As test cases, anharmonic (V(r)=r ²) and screened Coulomb potentials are considered. In particular, the method is applied to three-body Coulomb systems to obtain the dependence of the bound-state energy on the masses and charges of the particles. The calculations of the bound-state energies for the moleculesH ^–=(pee),H ₂ ⁺ =(ppe), (e ^–e^–e⁺) and (pp), (dd), (dt) prove the accuracy of the zeroth approximation to be better than one per cent. For the three-body Coulomb system with charges +, –, – and arbitrary masses the region of stability is determined. For the systems (pe ^–C⁺), (A ⁺e^–e⁺), and (pB ^–e^–) the critical masses are calculated to beM _c=1.945m_e,M _A=4.350m_e andM _B=1.575m_e. It turns out that the system (pe ^–e⁺) is unstable.     

Positron mobility in anthracene

We have measured the positron mobility in a sample of scintillation grade anthracene at two temperatures. We obtain at 300 K: =(26.0±0.9±2.6) cm²V^–1s^–1 and at 77 K: =(33.4±1.1±3.3) cm²V^–1s^–1, where the first error estimate is statistical and the second is systematic. We have also made preliminary measurements on a highly purified sample that yields =(130±3±20) cm² V^–1 s^–1 at 300 K. The data are consistent with the hypothesis that the positron is scattered from both impurities and acoustic phonons in the first sample, and predominantly from photons in the second. It appears that positrons in pure anthracene crystals are delocalized and have a mean free path of about 85 Å at room temperature.     

Mobility of muons in Cu below 2 K

We have performed transverse fieldSR experiments on several different samples of copper in the temperature range below 2 K, including isotope separated Cu and impurity doped polycrystalline Cu.We do not observe any strong effect of the isotope composition of the sample. A⁶³Cu and a natural Cu sample of identical purity both yield 0.16s^–1 for the low-temperature plateau, while an increased linewidth in the⁶⁵Cu case may be related to the strong effects of Fe impurities.Careful transverse field measurements on large single crystals at 0.08 K reveal non-Gaussian lineshapes in accordance with the picture of diffusing muons at this temperature. This allows us to reject several of the existing models for muon behaviour in copper below 2 K.     

Femtosecond-pulse laser ablation of human corneas

A femtosecond pulse laser in the visible spectral region shows promise as a potentially new powerful corneal sculpting tool. It combines the clinical and technical advantages of visible wavelengths with the high ablation quality observed with nanosecond-pulse excimer lasers at 193 nm. A femtosecond and a nanosecond dye laser with pulse durations of 300 fs and 7 ns, and centre wavelengths at 615 nm and 600 nm, respectively, both focused to an area of the order of 10^–5 cm², have been applied to human corneal ablation. Nanosecond laser pulses caused substantial tissue disruption within a 30–100 m range from the excision edge at all fluences above the ablation threshold of F _th60 J cm^–2 (I _th9 GW cm^–2). Completely different excisions are produced by the femtosecond-pulse laser: high quality ablations of the Bowman membrane and the stroma tissue characterised by damage zones of less than 0.5 m were observed at all fluences above ablation threshold of F _th1 J cm^–2 or I _th3 TW cm^–2 (3×10¹² W cm^–2). The transparent cornea material can be forced to absorb ultrashort pulses of extremely high intensity. The fs laser generates its own absorption by a multiphoton absorption process.