Ultrasonic enhancement of microdroplet-based interfacial reaction for improving the synthesis of Ag2S QDs

Ag₂S quantum dots (QDs) have aroused extensive concerns in intravital imaging field due to their merits of narrow bandgap, low biological toxicity and decent fluorescence emission properties in the second near-infrared (NIR-II) window. However, low quantum yield (QY) and poor uniformity of Ag₂S QDs are still main obstacles for its application. In this work, a novel strategy of utilizing ultrasonic field is presented, which can enhance the microdroplet-based interfacial synthesis of Ag₂S QDs. The ultrasound increases the presence of ions at the reaction sites by enhancing the ion mobility in the microchennels. Therefore, the QY is enhanced from 2.33 % (optimal QY without ultrasound) to 8.46 %, which is the highest value of Ag₂S ever reported without ion-doping. Also, the decrease of the corresponding full width at half maximum (FWHM) from 312 nm to 144 nm indicates the obvious uniformity improvement of the obtained QDs. Further mechanism exploration illustrates that ultrasonic cavitation significantly increases the interfacial reaction sites by splitting the droplets. Meanwhile, the acoustic flow field strengthens the ion renewal at the droplet interface. Consequently, the mass transfer coefficient increases by more than 500 %, which is favorable to improve both the QY and quality of Ag₂S QDs. This work serves both fundamental research and practical production for the synthesis of Ag₂S QDs.     

Resistive switching behavior in a Ni–Ag<Subscript>2</Subscript>Se–Ni nanowire

Hysteretic resistive switching behavior in a silver selenide (Ag₂Se) nanowire, which had a diameter of about 200 nm and a length of about 10 μm, was studied using scanning probe microscopy. Electrical current measurements were carried out in a range from 0 to −10 V and in temperatures below and above the phase transition of Ag₂Se. ON/OFF switching times were measured with pulsed voltages. They displayed different characteristics at low and high temperatures. The results confirm that Ag₂Se nanowires have applications in nanoscale switching devices.     

Fabrication of rare-earth/quantum-dot nanocomposites for color-tunable sensing applications

We developed a new fluorescent nanocomposite by using a layer-by-layer approach to link NaYF₄:Ce,Tb rare-earth (RE) nanocrystals and CdSe/ZnSe semiconductor quantum dots (QDs) with opposite charges. Under ultraviolet light excitation, the nanocomposites exhibited both the green Tb emission centered at 550 nm, and the red QD emission at 650 nm. Sensing applications showed that the red QD emission was quenched by trace amount of Cu²⁺ (or Ag⁺) ions due to the ion displacement mechanism, while the green RE emission kept constant. Thus, the nanocomposites with the decreased QD/RE emission intensity ratio and changed fluorescence output color provided a visible “indicator” to detect metal ions quantificationally. In comparison with single emission materials, the dual emission nanocomposites can be a more reliable probe for various sensing applications.     

High-Throughput Robotic Synthesis and Photoluminescence Characterization of Aqueous Multinary Copper–Silver Indium Chalcogenide Quantum Dots

The feasibility of a high-throughput robot-assisted synthesis of complex Cu_1-xAg_xInS_ySe_1-x (CAISSe) quantum dots (QDs) by spontaneous alloying of aqueous glutathione-capped Ag–In–S, Cu–In–S, Ag–In–Se, and Cu–In–Se QDs is demonstrated. Both colloidal and thin-film core CAISSe and core/shell CAISSe/ZnS QDs are produced and studied by high-throughput semiautomated photoluminescence (PL) spectroscopy. The silver-copper-mixed QDs reveal clear evidence of a band bowing effect in the PL spectra and higher average PL lifetimes compared to the counterparts containing silver or copper only. The photophysical analysis of CAISSe and CAISSe/ZnS QDs indicates a composition-dependent character of the nonradiative recombination in QDs. The rate of this process is found to be lower for mixed copper-silver-based QDs compared to Cu- or Ag-only QDs. The combination of the band bowing effect and the suppressed nonradiative recombination of CAISSe QDs is beneficial for their applications in photovoltaics and photochemistry. The synergy of high-throughput robotic synthesis and a high-throughput characterization in this study is expected to grow into a self-learning synthetic platform for the production of metal chalcogenide QDs for light-harvesting, light-sensing, and light-emitting applications.     

Assembly,characterization, and photocatalytic activities of TiO<Subscript>2</Subscript> nanotubes/CdS quantum dots nanocomposites

The semiconductor quantum dots (QDs) can be very efficient to tune the response of photocatalyst of TiO₂ to visible light. In this study, CdS QDs formed in situ with about 8 nm have been successfully deposited onto the surfaces of TiO₂ nanotubes (TNTs) to form TNTs/CdS QDs nanocomposites by use of a simple bifunctional organic linker, thiolactic acid. The diffuse reflectance spectroscopy (DRS) spectra of as prepared samples showed that the absorption edge of the TNTs/CdS composite is extended to visible range, with absorption edge at 530 nm. The photocatalytic activity and stability of TNTs/CdS were also evaluated for the photodegradation of rhodamine B. The results showed that when TNTs/CdS QDs was used, photocatalytic degradation of RhB under visible light irradiation reached 91.6%, higher than 45.4 and 30.5% for P25 and TNTs, respectively. This study indicated that the TNTs/CdS QDs nanocomposites were superior catalysts for photodegradation under visible light irradiation compared with TNTs and P25 samples, which may find wide application as a powerful photocatalyst in environmental field.     

Two-step annealed CdS/CdSe co-sensitizers for quantum dot-sensitized solar cells

CdS/CdSe co-sensitizers on TiO₂ films were annealed using a two-step procedure; high temperature (300 °C) annealing of TiO₂/CdS quantum dots (QDs), followed by low temperature (150 °C) annealing after the deposition of CdSe QDs on the TiO₂/CdS. For comparison, two types of films were prepared; CdS/CdSe-assembled TiO₂ films conventionally annealed at a single temperature (150 or 300 °C) and non-annealed films. The 300 °C-annealed TiO₂/CdS/CdSe showed severe coalescence of CdSe QDs, leading to the blocked pores and hindered ion transport. The QD-sensitized solar cell (QD-SSC) with the 150 °C-annealed TiO₂/CdS/CdSe exhibited better overall energy conversion efficiency than that with the non-annealed TiO₂/CdS/CdSe because the CdSe QDs annealed at a suitable temperature (150 °C) provided better light absorption over long wavelengths without the hindered ion transport. The QD-SSC using the two-step annealed TiO₂/CdS/CdSe increased the cell efficiency further, compared to the QD-SSC with the 150 °C-annealed TiO₂/CdS/CdSe. This is because the 300 °C-annealed, highly crystalline CdS in the two-step annealed TiO₂/CdS/CdSe improved electron transport through CdS, leading to a significantly hindered recombination rate.     

Structural and optical properties of In0.5Ga0.5As/GaAs quantum dots in an In0.1Ga0.9As well using repeated depositions of InAs/GaAs short-period superlattices for the application of optical communication

We report structural and optical properties of In_0.5Ga_0.5As/GaAs quantum dots (QDs) in a 100 Å-thick In_0.1Ga_0.9As well grown by repeated depositions of InAs/GaAs short-period superlattices with atomic force microscope, transmission electron microscope (TEM) and photoluminescence (PL) measurement. The QDs in an InGaAs well grown at 510 °C were studied as a function of n repeated deposition of 1 monolayer thick InAs and 1 monolayer thick GaAs for n=5–10. The heights, widths and densities of dots are in the range of 6–22.0 nm, 40–85 nm, and 1.6–1.1×10¹⁰/cm², respectively, as n changes from 5 to 10 with strong alignment along [1 −1 0] direction. Flat and pan-cake-like shape of the QDs in a well is found in TEM images. The bottoms of the QDs are located lower than the center of the InGaAs well. This reveals that there was intermixing—interdiffusion—of group III materials between the InGaAs QD and the InGaAs well during growth. All reported dots show strong 300 K-PL spectrum, and 1.276 μm (FWHM: 32.3 meV) of 300 K-PL peak was obtained in case of 7 periods of the QDs in a well, which is useful for the application to optical communications.     

Structural,morphological and thermoelectric properties of self-decorated copper selenide nanosheets synthesized at room temperature

In this work, an economical, surfactant-free and scalable solution synthesis method at room temperature for self-decorated copper selenide (Cu_2-xSe) nanosheets is reported. Structural and morphological characterizations clearly revealed the formation of single cubic phase Cu_2-xSe nanosheets in nearly stoichiometric ratio. The tentative mechanism for fabrication of self-decorated Cu_2-xSe nanosheets was proposed. Furthermore, nanostructured bulk Cu_2-xSe by hot pressing was explored for thermoelectric performance. High electrical conductivity (1.1 × 10⁵ S/m), moderate Seebeck coefficient (87 μV/K) and low thermal conductivity (1.11 W/mK) at 753 K were obtained. The figure of merit (ZT) ~ 0.56 and power factor (PF) ~ 860 μW/mK² at 753 K showed better performance than some reported Cu_2-xSe nanostructured or bulk counterparts under same temperature. Also, theoretically device ZT ~0.16 and efficiency up to 3% could be achieved. The results indicate that this green and novel synthesis process is an alternative to other reported time or energy consuming processes.     

AgSbSe2 and AgSb(S,Se)2 thin films for photovoltaic applications

Silver antimony selenide (AgSbSe₂) thin films were prepared by heating sequentially deposited multilayers of antimony sulphide (Sb₂S₃), silver selenide (Ag₂Se), selenium (Se) and silver (Ag). Sb₂S₃ thin film was prepared from a chemical bath containing SbCl₃ and Na₂S₂O₃, Ag₂Se from a solution containing AgNO₃ and Na₂SeSO₃ and Se thin films from an acidified solution of Na₂SeSO₃, at room temperature on glass substrates. Ag thin film was deposited by thermal evaporation. The annealing temperature was 350 °C in vacuum (10⁻³ Torr) for 1 h. X-ray diffraction analysis showed that the thin films formed were polycrystalline AgSbSe₂ or AgSb(S,Se)₂ depending on selenium content in the precursor films. Morphology and elemental analysis of these films were done using scanning electron microscopy and energy dispersive X-ray spectroscopy. Optical band gap was evaluated from the UV-visible absorption spectra of these films. Electrical characterizations were done using Hall effect and photocurrent measurements. A photovoltaic structure: glass/ITO/CdS/AgSbSe₂/Al was formed, in which CdS was deposited by chemical bath deposition. J-V characteristics of this structure showed V_oc = 435 mV and J_sc = 0.08 mA/cm² under illumination using a tungsten halogen lamp. Preparation of a photovoltaic structure using AgSbSe₂ as an absorber material by a non-toxic selenization process is achieved.     

Spectral Optical Properties of Polymer Composite Nanomaterials Based on Carbon Nanotubes in a High-Density Polyethylene Matrix

Spectral, kinetic, and nonlinear optical regularities that demonstrate the exchange of electronic excitations between the components of hybrid associates of Ag₂S colloid quantum dots (1.7–1.8 nm) in gelatin with molecules of thiazine dyes (Ds) are found. When the IR luminescence of Ag₂S quantum dots (QDs) is excited by radiation from the thionine absorption region, its enhancement due to nonradiative resonant energy transfer is observed. The association with methylene-blue molecules blocked the IR luminescence of Ag₂S QDs upon its excitation by radiation from the absorption region of the dye due to the transfer of charge carriers. It is demonstrated that the hybrid association of thionine molecules and Ag₂S QDs adversely affects the nonlinear optical properties of the latter, which manifests itself in inverse saturated absorption by the action of 10-ns second-harmonic pulses (532 nm) of a Nd³⁺:YAG laser. For the associates of Ag₂S QDs with methylene-blue molecules, the radiation focusing caused by the transfer of charge carriers from the dye and the change in the population of small traps in nanocrystals is found. It is concluded that the direction of the transfer of electronic excitations and the photophysical processes in these objects are determined by the mutual arrangement of the HOMO–LUMO levels of the dye with respect to the levels of dimensional quantization of the Ag₂S QDs.     

A comparison between optically active CdZnSe/ZnSe and CdZnSe/ZnBeSe self-assembled quantum dots: effect of beryllium

The composition and size of optically active Cd_xZn_1−xSe/ZnSe quantum dots are estimated with a previously developed method. The results are then compared with those obtained for Cd_xZn_1−xSe/Zn_0.97Be_0.03Se QDs. We show that introducing Be into the barrier material enhances both Cd composition and quantum size effect of optically active quantum dots.     

A natural abundance Se solid-state NMR study of inorganic compounds

Various inorganic selenium-based compounds were analysed by ⁷⁷Se solid-state NMR, and a distinct difference in chemical shift ranges for compounds where selenium is present as selenide (Se²⁻) ionically and covalently bonded systems was observed. The selenides exhibit a shift range of approximately −700 to −100 ppm, as opposed to 700 to 1600 ppm for the compounds where there tends to be more direct covalent bonding to the selenium. The anisotropic hyperfine shift observed in NbSe₂ is shown to be axially symmetric, where the H₁₁ component is found to be normal to the Se3-trigonal plane.     

Ion transfer in solid solutions of Cu<Subscript>2</Subscript>Se and Ag<Subscript>2</Subscript>Se superionic conductors

The cationic conductivities of Cu₂Se and Ag₂Se superionic conductor solid solutions in the composition region from Cu₂Se to Cu_0.7Ag_1.3Se are measured. It is demonstrated that the activation energy of ionic conduction depends only slightly on the chemical composition, varies from 0.14 to 0.17 eV, and exhibits a weakly pronounced maximum for the Ag_0.44Cu_1.56Se solid solution. The ionic Seebeck coefficients are measured for the Ag_0.23Cu_1.757Se solid solution. The heat of cation transfer in this solution is found to be equal to 0.144±0.014 eV from the Seebeck coefficients.     

Structural,thermal and electrical properties of the semiconductor system Ag(1−x)CuxInSe2

This paper presents a study of bulk samples synthesized of the Ag_1−xCu_xInSe₂ semiconductor system. Structural, thermal and electrical properties, as a function of the nominal composition (Cu content) x=0.0, 0.2, 0.4, 0.6, 0.8, and 1.0 were studied. The influence of x on parameters such as melting temperature, solid phase transition temperature, lattice parameters, bond lengths, crystallite size t (coherent domain), electrical resistivity, electrical mobility and majority carrier concentration was analyzed. The electrical parameters are analyzed at room temperature. In general, it is observed that the properties of the Ag_1−xCu_xInSe₂ system for x≤0.4 are dominated by n-AgInSe₂, while for x>0.4, these are in the domain of p-CuInSe₂. The crystallite size t in the whole composition range (x) is of the order of the nanoparticles. Secondary phases (CuSe, Ag₂Se and InSe) in small proportion were identified by XRD and DTA.     

Optical properties of new photovoltaic materials: AgCuO2 and Ag2Cu2O3

AgCuO₂ and Ag₂Cu₂O₃ are new types of semiconductor materials. A theoretical study is presented for both the electronic and optical properties of these new photovoltaic materials in the framework of density functional theory (DFT). The calculated cohesive energy is −3.606 eV/atom and −3.723 eV/atom for Ag₂Cu₂O₃ and AgCuO₂, respectively. Electronic calculations indicate that AgCuO₂ is a small band gap semiconductor and Ag₂Cu₂O₃ is metallic in nature. The valency state of Cu is divalent in Ag₂Cu₂O₃ and trivalent in AgCuO₂. The largest absorption coefficient of CuO₂ is 332 244, which is significantly greater than that of CuInSe₂, CdTe, GaAs, etc.     

Photoinduced Degradation of the Optical Properties of Colloidal Ag<Subscript>2</Subscript>S and CdS Quantum Dots Passivated by Thioglycolic Acid

The results of studying degradation of the optical properties of colloidal Ag₂S and CdS quantum dots (QDs) 2.6–3.2 nm in size passivated by thioglycolic acid (TGA) are presented. The photoluminescence intensity of colloidal Ag₂S QDs has been found to decrease under laser irradiation at a wavelength of 445 nm, beginning with the effective power of 10 mW. The observed effect is interpreted as a photochemical reaction of formation of new nonradiative-recombination channels in Ag₂S QDs upon excitation. It is established for colloidal CdS QDs passivated by TGA that a decrease in the optical density in the entire absorption spectrum and the luminescence intensity is accompanied by precipitation of the colloidal particles in a cell and related to photodegradation of the passivating shell.     

Characterization and catalytic performance of pure and Li2O-doped CuO/CeO2 catalysts

Pure and Li₂O-doped CuO/CeO₂ catalysts calcined at 500 °C were prepared by impregnation method. The catalysts are characterized by DTA, TG-DTG, XRD, IR, TEM, nitrogen adsorption at −196 °C and the catalytic decomposition of hydrogen peroxide at 30 °C.The effects of molar ratio, heat treatment time and the doping on the structural, surface and catalytic properties of nanocrystalline Cu/Ce-mixed oxides system have been studied. It was found that the catalytic activity of ceria-supported copper oxide catalysts increased by increasing both the heat treatment time and dopant content. However, the pure Cu/Ce-mixed oxide solids containing 10 wt.% CuO exhibited the best performance. The characterization results indicated that the higher surface area, the formation of solid solution between copper and cerium oxides, and the high dispersion of copper species on the ceria were responsible for the high catalytic activity of the CuO/CeO₂ catalysts.     

Preparation and mechanism investigation of highly sensitive humidity sensor based on Ag/TiO2

In this paper, a high-performance silver-doped titanium dioxide (Ag/TiO₂) humidity sensor was synthesized using a hydrothermal synthesis method for respiratory monitoring. The sensing mechanism was studied by the first principles of density functional theory (DFT). Calculations show that the doping of Ag⁺ ions increases the adsorption energy of TiO₂ to water molecules. Furthermore, the Ti–O bond in TiO₂ is broken due to the doping of Ag⁺ ions, which promotes the generation of Ti³⁺ defects. Experiments show that the doping of Ag⁺ ions can increase the hydroxide groups, Ti³⁺ defects and oxygen vacancies on the surface of TiO₂, thus effectively improving the responsivity, linearity and hysteresis of the TiO₂ humidity sensor. Compared to TiO₂, the resistance of the Ag/TiO₂ (0.5 mM) humidity sensor reaches 4.5 orders of magnitude with a high response of 39707.1, maximum hysteresis rate of 4.6%, response/recovery time of 31 s/15 s and the best linearity in a range of 11%–95% RH. In addition, the Ag/TiO₂ humidity sensor has been successfully used to detect different modes of respiration and determine the respiratory rate under different respiratory states. Significantly, this work demonstrates potential application value in human healthcare and activities monitoring.     

Ag2S nanoparticle encapsulated in mesoporous material nanoparticles and its application for photocatalytic degradation of dye in aqueous solution

Semiconductor loaded mesoporous materials in general possess greater photocatalytic activity than pure semiconductors. Hence, with an attempt to achieve higher photocatalytic activity, Ag₂S/MCM-41 photocatalysts were prepared by ion exchange method and used for the photocatalytic degradation of methylene blue. The materials were characterized by different analytical techniques such as transmission electron microscopy (TEM), X-ray diffraction (XRD), infrared spectroscopy (IR) and BET (Brunauer-Emmert-Teller) experiments. The effect of Ag₂S, MCM-41 support and different wt% of Ag₂S over the support on the photocatalytic degradation and influence of parameters such as Ag₂S loading, catalyst a mount, pH and initial concentration of dye on degradation are evaluated. The degradation reaction follows pseudo-first order kinetics. It was seen that 0.6 g/L of photocatalyst is an optimum value for the dosage of photocatalyst. The degradation efficiency was decreased in dye concentration above 3.2 ppm for dye.     

Separated AlxIn1−xN quantum dots grown by plasma-reactive co-sputtering

Separated Al_xIn_1−xN quantum dots (QDs) embedded in amorphous AlN films have been produced by radio-frequency co-sputtering technique on silicon (1 1 1) and quartz glass substrates. The mean size and density of Al_xIn_1−xN QDs can be conveniently monitored by deposition parameters. Transparent electron microscope, and X-ray diffraction were used to detect the structure of the Al_xIn_1−xN QDs system; field-emission scanning-electron microscope was adopted to measure the surface morphology and anticipate the size of the QDs; X-ray photoelectronic spectroscopy was used to measure the stoichiometric ratios of the QDs.