等离子体密度对激光拉曼放大机理的影响

等离子体中的背向拉曼散射机理可以用来产生超短超强的激光脉冲. 本文采用粒子模拟方法模拟研究了等离子体密度对激光拉曼放大过程的影响. 研究发现, 过低的等离子体密度会导致等离子体波提前波破而降低能量转换效率; 而过高的等离子体密度又会导致其他不稳定性的快速增长, 限制作用距离和输出能量. 因此, 拉曼放大机理的最佳等离子体密度应处于等离子体波破的密度阈值附近, 可以获得最高的能量转换效率和能量输出. 另外, 空间频谱分析显示放大激光的强度饱和主要来自于自相位调制不稳定性的发展. 利用10¹³ W·cm^-2的抽运激光脉冲, 模拟证实拉曼放大机理可有效地将种子激光的强度从10¹³ W·cm^-2 放大到10¹⁷ W·cm^-2, 脉宽压缩到40 fs, 且能量转换效率达到58%.     

微热光电系统原型的设计制造和测试

本文首次描述了一种新颖的微热光电(微TPV)系统原型的设计、加工过程和测试结果。该系统由一个SiC发射极、一个简单的9层绝缘过滤器和一个GaSb光电池环路组成。当H2流率为3.4439 g/h,H2/O2比为1.8时,微TPV 系统能在一个容积为0.091 cm3的微型燃烧室内产生0.562 W的电力输出。相应的开路电压和短路电流分别为1.14 V和0.65 A。该项工作使得我们在不久的将来用微TPV系统代替电池作为微机械装置的动力源成为可能。     

基于GaSb/CdS薄膜热光伏电池的器件设计

基于GaSb薄膜热光伏器件是降低热光伏系统成本的有效途径之一, 本文主要针对GaSb/CdS薄膜热光伏器件结构进行理论分析. 采用AFORS-HET软件进行模拟仿真, 分析GaSb和CdS两种材料各自的缺陷态密度、界面态对电池性能的影响. 根据软件模拟可以得知, 吸收层GaSb的缺陷态密度以及GaSb与CdS之间的界面态密度是影响电池性能的重要因素. 当GaSb缺陷态增加时, 主要影响电池的填充因子, 电池效率明显下降. 而作为窗口层的CdS缺陷态密度对电池性能影响不明显, 当CdS缺陷态密度上升4个数量级时, 电池效率仅下降0.11%.     

氦离子注入4H-SiC晶体的纳米硬度研究

4H-SiC晶体经能量为100 keV,剂量为3×10¹⁶ cm^-2的氦离子高温（500 K）注入后,再在773—1273 K温度范围内进行了退火处理,最后使用纳米压痕仪测量了样品注入面的硬度.测试结果表明,在500—1273 K温度范围内样品的硬度随退火温度升高呈现先增大后减小再增大的趋势,其中773 K退火样品的硬度增大明显.分析认为,退火样品的硬度变化是由退火过程中缺陷复合与氦泡生长导致样品内部的Si—C键密度、键长和键角改变引起的. 关键词： SiC 注入 氦泡 纳米压痕     

Effect of 6H-SiC （1120） substrate on epitaxial graphene revealed by Raman scattering

A nonpolar SiC(1120) substrate has been used to fabricate epitaxial graphene (EG). Two EGs with layer numbers of 8-10 (referred to as MLG) and 2-3 (referred to as FLG) were used as representative to study the substrate effect on EG through temperature dependent Raman scattering. It is found that Raman lineshifts of G and 2D peaks of the MLG with temperature are consistent with that of a free graphene predicted by theory calculation, indicating that the substrate influence on the MLG is undetectable. While Raman G peak lineshifts of the FLG to that of the free graphene are obvious, however, its lineshift rate (-0.016 cm^-1/K) is almost one third of that (-0.043 cm^-1/K) of a EG on 6H-SiC (0001) in the temperature range from 300 K to 400 K, indicating a weak substrate effect from SiC (1120) on the FLG. This renders the FLG a high mobility around 1812 cm²- ·V^-1-·s^-1 at room temperature even with a very high carrier concentration about 2.95× 10¹³ cm^-2 (p-type). These suggest SiC (1120) is more suitable for fabricating EG with high performance.     

KTN晶体及其熔体结构的高温拉曼光谱研究

测量并研究了不同温度(室温—1573 K)范围内KTN晶体的拉曼光谱及其熔体的高温拉曼光谱,分析了KTN晶体结构随温度变化的规律及其熔体的结构特征.随着温度的升高,KTN晶体的拉曼光谱谱峰都不同程度地向低波数方向移动,同时存在不同程度的展宽,并伴随强度的减弱.观察并解释了温度353 K附近KTN晶体样品的四方—立方转相现象.研究了KTN晶体拉曼光谱中538cm^-1,585cm^-1,835cm^-1和877cm^-1谱峰及其 关键词： 高温拉曼光谱 熔体 KTN晶体     

电离辐射对部分耗尽绝缘体上硅器件低频噪声特性的影响

本文针对辐射前后部分耗尽结构绝缘体上硅(SOI)器件的电学特性与低频噪声特性开展试验研究. 受辐射诱生埋氧化层固定电荷与界面态的影响, 当辐射总剂量达到1 M rad(Si) (1 rad = 10^-2 Gy)条件下, SOI器件背栅阈值电压从44.72 V 减小至12.88 V、表面电子有效迁移率从473.7 cm²/V·s降低至419.8 cm²/V· s、亚阈斜率从2.47 V/dec增加至3.93 V/dec; 基于辐射前后亚阈斜率及阈值电压的变化, 可提取得到辐射诱生界面态与氧化层固定电荷密度分别为5.33×10¹¹ cm^{- 2}与2.36×10¹² cm^-2. 受辐射在埋氧化层-硅界面处诱生边界陷阱、氧化层固定电荷与界面态的影响, 辐射后埋氧化层-硅界面处电子被陷阱俘获/释放的行为加剧, 造成SOI 器件背栅平带电压噪声功率谱密度由7×10^{- 10} V²·Hz^-1增加至1.8×10^-9 V² ·Hz^-1; 基于载流子数随机涨落模型可提取得到辐射前后SOI器件埋氧化层界面附近缺陷态密度之和约为1.42×10¹⁷ cm^-3·eV^-1和3.66×10¹⁷ cm^-3·eV^-1. 考虑隧穿削弱因子、隧穿距离与时间常数之间关系, 本文计算得到辐射前后埋氧化层内陷阱电荷密度随空间分布的变化.     

15 nm Bulk nFinFET器件性能研究及参数优化

为研究Bulk FinFET工作时基本结构参数、器件温度和栅极材料对其性能的影响,建立了一个15 nm n型Bulk FinFET器件模型,仿真分析了不同栅长、鳍宽、鳍高、沟道掺杂浓度、器件工作温度、栅极材料对器件性能的影响,发现增长栅长、降低鳍宽和增加鳍高有助于抑制短沟道效应;1×10¹⁷ cm^-3以下的低沟道掺杂浓度对器件特性影响不大,但高掺杂会使器件失效;器件工作温度的升高会导致器件性能的下降;采用高K介质材料作为栅极器件性能优于传统材料SiO₂。     

n型Bi2Te3基化合物的类施主效应和热电性能

晶粒细化是提高Bi₂Te₃基热电材料力学性能的重要方法,但晶粒细化过程中伴随的类施主效应严重劣化了材料的热电性能,并且一旦产生类施主效应,就很难通过简单的热处理等工艺消除.本文系统研究n型Bi₂Te₃基化合物烧结前粉体颗粒尺寸对材料类施主效应和热电性能的影响规律.随着颗粒尺寸减小,氧诱导的类施主效应明显增强,载流子浓度从10 M烧结样品的3.36×10¹⁹ cm^-3急剧增加到120 M烧结样品的7.33×10¹⁹ cm^-3,严重偏离最佳载流子浓度2.51×10¹⁹ cm^-3,热电性能严重劣化.当粉体颗粒尺寸为1—2 mm时,烧结样品的Seebeck系数为–195 μV/K,载流子浓度为3.36×10¹⁹ cm^-3,与区熔样品沿着ab面方向的Seebeck系数为–203 μV/K和载流子浓度为2.51×10¹⁹     

Fe+注入植物种子射程实验的Monte-Carlo仿真

研究表明,TRIM程序运算结果与实验测量离子注入种子的射程分布数据相差甚远.本文根据种子微结构的特点,综合考虑多种因素,设计种子微结构模型和运算程序,用Monte-Carlo仿真不同能量（110 keV,20 keV,200 keV）、不同注量（2×10¹⁶ ions·cm^-2,5×10¹⁶ ions·cm^-2,10¹⁷ ions·cm^-2,2×10¹⁷ ions·cm^-2）的Fe⁺注入花生、彩棉、小麦种子的射程分布,结果显示本设计程序仿真的结果与实验测量数据较为吻合.所获得的注入离子与种子微结构相互作用的随机抽样模拟运算方法,为离子注入与生命体相互作用的理论研究提供新的思路.     

Efficient realization of daytime radiative cooling with hollow zigzag SiO_2 metamaterials

A tunable selective emitter with hollow zigzag SiO_2 metamaterials, which are deposited on Si_3 N_4 and Ag film, is proposed and numerically investigated for achieving excellent radiative cooling effects. The average emissivity reaches a high value of 98.7% in the atmospheric window and possesses a high reflectivity of 92.0% in the solar spectrum. To reveal the enhanced absorptivity, the confined electric field distribution is investigated, and it can be well explained by moth eye effects. Moreover, tunable emissivity can also be initiated with different incident angles and it stays above 83% when the incident angle is less than 80°, embodying the excellent cooling performance in the atmospheric transparency window.Its net cooling power achieves 100.6 W·m~(-2), with a temperature drop of 13°, and the cooling behavior can persist in the presence of non-radiative heat exchange conditions. Therefore, high and tunable selective emitters based on our designed structure could provide a new route to realizing high-performance radiative cooling. This work is also of great significance for saving energy and environmental protection.     

Highly flexible and excellent performance continuous carbon nanotube fibrous thermoelectric modules for diversified applications

A highly flexible and continuous fibrous thermoelectric (TE) module with high-performance has been fabricated based on an ultra-long single-walled carbon nanotube fiber, which effectively avoids the drawbacks of traditional inorganic TE based modules. The maximum output power density of a 1-cm long fibrous TE module with 8 p-n pairs can reach to 3436 μW·cm^-2, the power per unit weight to 2034 μW·g^-1, at a steady-state temperature difference of 50 K. The continuous fibrous TE module is used to detect temperature change of a single point, which exhibits a good responsiveness and excellent stability. Because of its adjustability in length, the flexible fibrous TE module can satisfy the transformation of the temperature difference between two distant heat sources into electrical energy. Based on the signal of the as-fabricated TE module, a multi-region recognizer has been designed and demonstrated. The highly flexible and continuous fibrous TE module with excellent performance shows a great potential in diversified applications of TE generation, temperature detection, and position identification.     

温稠密钛电导率计算

温稠密物质是惯性约束核聚变、重离子聚变、Z箍缩动作过程中物质发展和存在的重要阶段. 其热力学性质和辐射输运参数在聚变实验和内爆驱动力学模拟过程中有至关重要的作用. 本文通过建立非理想Saha方程, 结合线性混合规则的理论方法模拟了温稠密钛从10^-5-10 g·cm^-3, 10⁴ K到3×10⁴ K区间的粒子组分分布和电导率随温度密度的变化, 其中粒子组分分布由非理想Saha方程求解得到. 线性混合规则模型计算温稠密钛的电导率时考虑了包括电子、原子和离子之间的多种相互作用. 钛的电导率的计算结果与已有的爆炸丝实验数据相符. 通过电导率随温度密度变化趋势判断, 钛在整个温度区间, 密度0.56 g·cm^-3时发生非金属相到金属相相变. 对于简并系数和耦合系数的计算分析, 钛等离子体在整个温度和密度区间逐渐从弱耦合、非简并状态过渡到强耦合部分简并态.     

A two-component model for the electron distribution function in ahigh-current pseudospark or back-lighted thyratron

Temperature, energy, and densities of two electron distribution function components, including an isotropic bulk part and an anisotropic beam, are analyzed for a hydrogen pseudospark and/or back-lighted thyratron switch plasma with a peak electron density of 1-3×10¹⁵ cm^-3 and peak current density of ≈10⁴ A/cm². Estimates of a very small cathode-fall width during the conduction phase and high electric field strengths lead to the injection of an electron beam with energies ⩾100 eV and density of 10¹³-10¹⁴ cm^-3 into a Maxwellian bulk plasma. Collisional and radiative processes of monoenergetic beam electrons, bulk plasma electrons and ions, and atomic hydrogen are modeled by a set of rate equations, and line intensity ratios are compared with measurements. Under these high-current conditions, for an initial density n_H2=10¹⁶ cm^-3 and electron temperature of 0.8-1 eV, the estimated beam density is ≈10¹³ -10¹⁴ cm^-3. These results suggest the possibility of producing in a simple way a very high-density electron beam     

High-responsivity solar-blind photodetector based on MOCVD-grown Si-doped β-Ga_2O_3 thin film

Si-doped β-Ga_2O_3 films are fabricated through metal-organic chemical vapor deposition(MOCVD). Solar-blind ultraviolet(UV) photodetector(PD) based on the films is fabricated by standard photolithography, and the photodetection properties are investigated. The results show that the photocurrent increases to 11.2 m A under 200 μW·cm-2254 nm illumination and ±20 V bias, leading to photo-responsivity as high as 788 A·W~(-1). The Si-doped β-Ga_2O_3-based PD is promised to perform solar-blind photodetection with high performance.     

微波低温制备Mg2Si0.4Sn0.6-yBiy热电材料的传输机理

德拜弛豫理论表明, 在频率为2.45 GHz的外加交变电磁场的作用下, 微波对极性分子的极化过程约为10^-10 s, 因此利用微波固相反应可以在短时低温条件下制备出纳米粉体材料. 本文以MgH₂代替Mg粉, 利用微波固相反应在低温下制备了Mg₂Si_0.4Sn_0.6-yBi_y (0 ≤y ≤q 0.03)固溶体, 并结合单带抛物线计算模型对其热电传输机理进行了分析. 研究结果表明: 利用该工艺可以有效抑制Mg的挥发和MgO 的生成, 在400 ℃保温15 min内即可完成MgH₂与Si粉和Sn粉的固相反应, 获得片层间距为100 nm的超细化学计量比产物; 杂质Bi的引入可以有效增加载流子浓度, 并引起晶格畸变, 在晶格畸变和样品特有的纳米片层结构的协同作用下, 声子得到有效散射, 样品具有最低的热导率1.36 W·m^-1·K^-1. 较低的有效掺杂率和复杂的能带结构具有降低能带态密度有效质量和减小载流子弛豫时间的双刃效应, 使得本征激发提前, 在600 K样品取得最大ZT值为0.66.     

用于热光伏系统的近场辐射光谱控制表面结构

为提升近场热光伏发电系统的能源转换效率和发电功率,设计了Ⅲ-Ⅴ族半导体表面的矩形光栅结构,以实现从热发射器到热光伏电池的近场辐射热流选择性调制.使用在近红外波段具有表面等离子体激元特性的掺杂氧化锌作为热发射器,在GaSb热光伏电池表面添加亚微米二维光栅结构,在近场间距下形成与表面波耦合的陷光效应,由此有选择性地增强了电池能带内的光谱辐射热流.有别于以往类似研究中常用的等效近似方法,开展了时域有限差分方法模拟,能够严格考虑周期性结构细节,结合以涨落耗散理论为基础的Langevin方法,直接计算了复杂结构参与的近场辐射传热问题,以此揭示表面结构影响近场辐射传热的物理机理.结果显示使用带表面结构的薄膜GaSb电池,可使辐射热流的光谱峰值达到同温度远场黑体辐射源情况下的2.84倍,且热流增益区集中在波长略短于电池能带的窄波段区间,适应高效率、高功率热光伏系统对辐射传热设计的要求.