Silver-enhanced conductivity of magnetoplasmonic nanochains

A method for improving the electrical properties of one-dimensional conducting structures by reductive deposition of metallic silver on a gold surface is presented. Fe₃O₄@Au core–shell nanoparticles were used to fabricate conducting magnetoplasmonic nanochains (MPNCs) through magnetic-field-induced assembly. The MPNCs were prepared on a solid substrate. Their dimension was controlled by adjusting the pH of the colloidal solution. The nanochains (NCs) were placed across gold microelectrodes, and additional metal was deposited by highly specific chemical enhancement of the colloidal gold using a silver enhancement solution. Silver-enhanced MPNCs show a remarkable morphology and an impressive enhancement in electrical properties compared to the as-prepared MPNCs.     

轴对称渐变型类周期慢波结构的色散特性

运用场匹配法和傅里叶级数理论,提出一种原则上可数值求解任意轴对称渐变型类周期慢波结构色散特性的方法。采用该方法编制了计算渐变型波纹波导和渐变型盘荷波导色散曲线的Matlab程序,详细分析并讨论了这两类典型渐变型类周期慢波结构的色散特性。数值计算结果与多维全电磁模拟软件模拟结果的数据吻合度较高,验证了该数值算法的可靠性。另外,该方法具有较强的普适性和扩展性,也可退化到任意轴对称周期慢波结构色散特性的求解,为慢波结构的设计提供一种简单有效的途径。     

轴对称渐变型类周期慢波结构的色散特性

 运用场匹配法和傅里叶级数理论,提出一种原则上可数值求解任意轴对称渐变型类周期慢波结构色散特性的方法。采用该方法编制了计算渐变型波纹波导和渐变型盘荷波导色散曲线的Matlab程序,详细分析并讨论了这两类典型渐变型类周期慢波结构的色散特性。数值计算结果与多维全电磁模拟软件模拟结果的数据吻合度较高,验证了该数值算法的可靠性。另外,该方法具有较强的普适性和扩展性,也可退化到任意轴对称周期慢波结构色散特性的求解,为慢波结构的设计提供一种简单有效的途径。     

Seed-mediated shape evolution of gold nanomaterials: from spherical nanoparticles to polycrystalline nanochains and single-crystalline nanowires

We studied the kinetics of the reduction of a gold precursor (HAuCl₄) and the effect of the molar ratio (R) of sodium citrate, which was introduced from a seed solution, and the gold precursor on the shape evolution of gold nanomaterials in the presence of preformed 13 nm gold nanoparticles as seeds. The reduction of the gold precursor by sodium citrate was accelerated due to the presence of gold seeds. Nearly single-crystalline gold nanowires were formed at a very low R value (R = 0.16) in the presence of the seeds as a result of the oriented attachment of the growing gold nanoparticles. At a higher R value (R = 0.33), gold nanochains were formed due to the non-oriented attachment of gold nanoparticles. At a much higher R value (R = 1.32), only larger spherical gold nanoparticles grown from the seeds were found. In the absence of gold seeds, no single-crystalline nanowires were formed at the same R value. Our results indicate that the formation of the 1D nanostructures (nanochains and nanowires) at low R values is due to the attachment of gold nanoparticles along one direction, which is driven by the surface energy reduction, nanoparticle attraction, and dipole–dipole interaction between adjacent nanoparticles.     

Facile sonochemical synthesis of nanosized InP and GaP

A novel sonochemical method for the preparation of MP (M = Ga, In) nanocrystalline materials has been developed. The procedure consists of the in situ synthesis of sodium phosphide and its subsequent reaction with the appropriate metal chloride using ultrasound. The products were characterized by X-ray powder diffraction, electron microscopy, and energy dispersive X-ray microanalysis (EDX). The choice of solvent and the use of high-power ultrasound are both important in the formation of the products.     

准周期加隔板有限长圆柱壳声散射

研究准周期加隔板有限长圆柱壳在水中的声散射特性,隔板位置存在小的随机偏差.首先给出理论推导,通过计算周期加隔板情况验证理论公式的正确性.然后以角度-频率谱形式给出准周期加隔板圆柱壳声散射计算结果.计算表明隔板的准周期性导致Bloch-Floquet弯曲波和散射声场背景出现扩散和增强现象,而近乎平行于横轴的由隔板共振引起的亮条纹被散射声场背景所掩盖.最后讨论了随机因子、隔板个数以及隔板间距对Bragg散射的影响.计算表明随机因子越大Bragg散射条纹的频率范围越宽扩散越明显,隔板个数越多Bragg散射条纹的频率范围越窄能量越集中,隔板间距变大时Bragg散射条纹增多而且越高阶次的Bragg散射条纹扩散越严重.根据Bragg散射的几何特征导出的近似估算公式可以较准确预报Bragg散射在频谱图上的位置,也可以大致预报隔板准周期排列时Bragg散射的扩散现象.     

温和的苯热溶剂条件下GaP纳米棒的形成机理研究

采用金属Na，白磷和GaCl₃为原料，在温和的苯热溶剂条件下制备了直径为20—40nm，长度为200—500nm的GaP纳米棒和直径为20—40nm的球形颗粒.利用X射线衍射(XRD)、透射电子显微镜(TEM)和X射线光电子能谱(XPS)研究了反应条件对产物结晶性和形貌的影响.实验结果表明，当反应温度低于250℃时，产物基本上为GaP纳米棒，并随着反应温度升高，产物逐渐转化为球形纳米颗粒；当反应温度超过280℃时，产物完全为规则的球形.同时，GaP纳米棒的生长遵循SLS生长机理. 关键词： 纳米GaP 苯热 SLS生长机理     

用CH3CSNH2钝化GaP表面特性的研究

借助扫描电子显微镜（ＳＥＭ）、Ｘ光电子能谱仪（ＸＰＳ）研究在不同处理条件下,ＧａＰ晶片表面硫化物钝化对其结构、形态以及表面形貌的影响。实验结果表明：经过ＣＨ３ＣＳＮＨ２溶液一定时间钝化处理后,ＧａＰ表面氧化物基本消失,形成薄的硫化物钝化层和较强的Ｇａ—Ｓ、Ｐ—Ｓ键,并引起Ｘ光电子能谱的Ｇａ、Ｐ芯能级化学位移,Ｇａ的硫化物有较好的稳定性。     

二维8重固-流型准周期声子晶体带隙特性研究

针对二维8重固-流型(钢-水)准周期声子晶体,通过实验方法测试得到了不同大小准周期系统的透射谱,并利用有限元方法计算了准周期体系的频散曲线和透射谱.结果显示,实验与有限元方法所得透射谱结果基本符合,但有限元方法得到的透射谱显示的带隙特性更为明显;二维固-流型8重准周期声子晶体选用包含其中心拼图在内的最小超元胞可以近似计算整个准周期结构的频带结构.     

红外区磷化稼散射强度的计算与分析

根据Mie散射理论,对磷化稼粒子光散射特性进行了数值计算与理论分析,得到了散射强度与散射角、入射波长以及偏振度与散射角的关系。研究表明,红外波段光散射很小,前向散射占有优势,粒子半径越大,前向散射越强,并且在散射角900方向上能观测到线偏振光,对研究GaP红外光学特性提供了理论参考。     

A note on the quasi-periodic solutions of the modified Boussinesq hierarchy

Based on the theory of trigonal curve and the properties of three kinds of the Abel differentials on it, we deduce the explicit theta function representations of the Baker-Akhiezer function and the meromorphic function associated with the modified Boussinesq hierarchy. The modified Boussinesq flows are straightened using the Abel map and the Lagrange interpolation formula. The explicit theta function representations of solutions for the entire modified Boussinesq hierarchy are constructed with the aid of the asymptotic properties and the algebro-geometric characters of the meromorphic function.     

纳米GaP粉体对结晶紫的光催化降解及其振动光谱分析

对纳米 Ga P粉体 -结晶紫水溶液光催化降解进行了研究。纳米 Ga P粉体在紫外光照射条件下对结晶紫具有光催化降解作用 ;随平均颗粒度的降低 ,纳米 Ga P粉体的光催化活性增加。红外光谱测试结果表明 :进行光催化过程以后 ,纳米 Ga P表面存在的几种主要振动模式变化较小或不变 ;拉曼光谱测试结果表明 :纳米 Ga P粉体的横向光学声子模与纵向光学声子模 ,以及表面主要振动模式几乎没有发生变化     

Implantation and diffusion of 73As in GaAs and GaP

Self-diffusion on the As sublattice in intrinsic GaAs and foreign-atom diffusion on the P sublattice in intrinsic GaP were investigated in a direct way by As tracer diffusion measurements using the radioisotope ⁷³As. For this purpose ⁷³As was implanted in both materials at the ISOLDE facility of CERN. Then diffusion annealings were performed followed by serial sectioning and counting of the radioactivity in each section. The resulting profiles were simulated within a computer model which accounts for the observed loss of tracer to the diffusion ambient. The so-obtained diffusion coefficients for As in GaAs and GaP are compared with existing diffusivities in these compounds. This revised version was published online in July 2006 with corrections to the Cover Date.     

准周期随机声脉冲序列信号在浅海波导中的传播

准周期随机声脉冲序列作为船舶辐射噪声信号模型具有合理性和一定普适性,这里将此模型与海洋波导结合,探讨基于此模型产生的噪声线谱经波导传播后的物理规律变化,即船舶辐射噪声经波导作用后的信号物理特性。理论分析和传播仿真计算表明,准周期声脉冲序列船舶噪声信号所含有的线谱由于受随机波导的随机性和多途干涉共同作用,序列脉冲出现的周期性显著被削弱,线谱相对幅度将\     

Saturation behavior of extrinsic photoconductivity in GaP light emitting diodes at high infrared intensities

Saturation of extrinsic photoconductivity in GaP:N(Zn, Te) diodes could be achieved by excitation with a TEA-CO₂-laser. At wavelengths in the 10 m range intensities of several 100 kW/cm² being near the damage threshold were applied. Carrier lifetimes of 60 ps at 4.2 K and 200 ps at 77 K could be estimated. The only conceivable mechanism explaining these short time constants is the capture of infrared excited holes by ionized shallow acceptors in the highly compensated p-side of the diode.     

Correlation between electronic states and optical properties in indirect GaAsP/GaP quantum wells with insertion of an ultrathin AlP layer

The optical properties of indirect semiconductor quantum wells (QWs), were studied in relation to their electronic states controlled by an ultrathin AlP layer. The insertion of 1 ML of AlP at the center of a 60 Å GaAsP/GaP QW drastically increased the photoluminescence (PL) intensity and the efficiency of the no-phonon (NP) transition. The NP intensity relative to its TO phonon replica was found to greatly depend on the structural parameters and decreased by decreasing the width of the AlP layer or by increasing the arsenic composition of the GaAsP QW. The comparison with numerical calculation clarified that the efficiency of the NP transition is improved when the X_z electrons rather than X_xy electrons are involved in the radiative recombination. This can be qualitatively understood that the X_z electrons are more strongly localized to the AlP layer, leading to the efficient relaxation of the selection rule. The Arrhenius behavior of the PL intensity was also studied and the quenching of the PL intensity was interpreted as being due to the thermally activated escape of carriers from the well region into the GaP barrier.