Microstructure of a-SiOx:H

A set of a-SiO_x:H (0.52 <x< 1.58) films are fabricated by plasma-enhanced-chemical-vapor-deposition (PECVD) method at the substrate temperature of 250°C. The microstructure and local bonding configurations of the films are investigated in detail using micro-Raman scattering, X-ray photoelectron spectroscopy (XPS) and Fourier transform infrared spectroscopy (FTIR). It is found that the films are structural inhomogeneous, with five phases of Si, Si₂O:H, SiO:H, Si₂O₃:H and SiO₂ that coexist. The phase of Si is composed of nonhydrogenated amorphous silicon (a-Si) clusters that are spatially isolated. The average size of the clusters decreases with the increasing oxygen concentration x in the films. The results indicate that the structure of the present films can be described by a multi-shell model, which suggests that a-Si cluster is surrounded in turn by the subshells of Si₂O:H, SiO:H, Si₂O₃:H, and SiO₂.     

Microstructure of a-SiOx:H

A set of a-SiOx :H (0.52 ＜x＜1.58) films are fabricated by plasma-enhanced-chemical-vapor-deposition (PECVD) method at the substrate temperature of 250℃. The microstructure andlocal bonding configurations of the films are investigated in detail using micro-Raman scattering,X-ray photoelectron spectroscopy (XPS) and Fourier transform infrared spectroscopy (FTIR). It isfound that the films are structural inhomogeneous, with five phases of Si, Si2O:H, SiO:H, Si2O3:Hand SiO2 that coexist. The phase of Si is composed of nonhydrogenated amorphous silicon (a-Si)clusters that are spatially isolated. The average size of the clusters decreases with the increasingoxygen concentration x in the films. The results indicate that the structure of the present films canbe described by a multi-shell model, which suggests that a-Si cluster is surrounded in turn by thesubshells of Si2O:H, SiO:H, Si2O3:H, and SiO2.     

Microstructure and photoluminescence of a-SiO x :H

Two strong photoluminescence (PL) bands in the spectral range of 550–900 nm have been observed at room temperature from a series of a-SiO _x :H films fabricated by plasma-enhanced chemical vapor deposition (PECVD) technique. One is composed of a main band in the red-light region and a shoulder; the other is located at about 850 nm, only found after 1170°C annealing in N₂ atmosphere. In conjunction with infrared (IR) and micro-Raman spectra, it is thought that the two PL bands are associated with a-Si clusters in the SiO _x network and nanocrystalline silicon in SiO₂, respectively. Project supported by the National Natural Science Foundation of China (Grant No. 69576025).     

Influence of mechanical activation,ion implantation,and filler type on the formation of a transfer film in tribounits of UHMWPE-based composites

The supermolecular structure of composites obtained by reinforcing an ultrahigh-molecular-weight polyethylene with C and Al₂O₃ nanofibers, Cu and SiO₂ nanoparticles, and Al₂O₃ and AlO (OH) microparticles has been studied by means of X-ray diffraction analysis, infrared spectroscopy, and optical and electron microscopy. It is shown that the filler type (nano-, submicro-, or micro-) determines the character of the supermolecular structure, the evolution of friction transfer films, and the wear resistance of the composites.     

Synthesis and characterization of C3N4 hard films

C₃N₄ films have been synthesized on both Si and Ft substrates by microwave plasma chemical vapor deposition (MPCVD) method. X-ray spectra were calculated for single phase α-C₃N₄ and β-C₃N₄ respectively. The experimental X-ray spectra of films deposited on both Si and Pt substrates showed all the strong peaks of α-C₃N₄ and β-C₃N₄ so the films are mixtures of α-C₃N₄ and β-C₃N₄. The N/C atomic ratio is in the range of 1.0–2.0. X-ray photoelectron spectroscopy (XPS) analysis indicated that the binding energy of Is and N ls are 286.2 eV and 399.5 eV respectively, corresponding to polarized C-N bond. Fourier transform infrared absorption (FT-IR) and Raman spectra support the existence of C-N covalent bond in the films. Nano-indentation hardness tests showed that the bulk modulus of a film deposited on Pt is up to 349 GPa     

Synthesis and characterization of C3N4 crystal (I)

A successful experimental synthesis of pure crystalline β- and α-C₃N₄ films on Si(100) substrate was carried out by bias-assisted hot filament chemical vapor deposition (bias-HFCVD). It is found that a mixed-phase C₃-_I-Si_xN_y buffer layer was formed between the Si substrate and the C-N film. A “lattice match selection” was proposed to study the growth mechanism of C₃N₄ clusters composed of many crystal columns with hexagonal facets. Project supported by the National Natural Science Foundation of China and the Chinese Academy of Sciences.     

Influence of SiO2 in SiCp on the microstructure and impact strength of Al/SiCp composites fabricated by pressureless infiltration

The effect of SiO₂ in SiC_p and the following processing parameters on the microstructure and impact strength of Al/SiC_p composites fabricated by pressureless infiltration was investigated: Mg content in the aluminum alloy, SiC particle size, and holding time. Preforms of SiC_p in the form of rectangular bars (10 × 1 × 1 cm) were infiltrated at 1150°C in an argon→nitrogen atmosphere for 45 and 60 min by utilizing two aluminum alloys (Al-6 Mg-11 Si and Al-9 Mg-11 Si, wt.%). The results obtained show that the presence of SiO₂ in SiC affects the microstructure and impact strength of the composites significantly. When Al₄C₃ is formed, the impact strength decreases. However, a high proportion of SiC to SiO₂ limits the formation of the unwanted Al₄C₃ phase in the composites. Also, a higher content of Mg in the Al alloy lowers the residual porosity and, consequently, increases the composite strength. The impact strength grows with decrease in SiC particle size and increases considerably when the residual porosity is less than 1%. Russian translation published in Mekhanika Kompozitnykh Materialov, Vol. 42, No. 3, pp. 401–418, May–June, 2006.     

Interface interaction and inter-osmosis effect of Fe x (SiO2)1-x nanocomposite materials on magnetic properties

Fe _x (SiO₂)_1-x nanocomposites prepared by using mechanical alloying method were reported. The microstructure character and magnetic properties of Fe _x (SiO₂)_1-x nanocomposite samples with different Fe content and different ball milling time were studied by using X-ray diffraction (XRD), transmission electron microscopy (TEM), Mössbauer spectroscopy, and Faraday magnetic balance in a wide temperature range. The results indicate that the rnicrostructure and magnetic properties are closely related to ball milling time and Fe content. When Fe content is less than 20 wt%, the sample after 80-h ball milling has very complex microstructure. Small α-Fe grains and Fe cluster are implanted in SiO₂ matrix. And there are not only isolated α-Fe granular and Fe cluster, but also nanometer scaled sandwich network-like structure. Fe _x (SiO₂)_1-x nanocomposite samples display a rich variety of physical and chemical properties as a result of their unique nanostructure, strong interface interaction and inter-osmosis effect in Fe-SiO₂ boundaries, and the grain size effect.     

Differences in microstructure of Pd77.5Au6Si16.5 alloy solidified under microgravity and gravity conditions

The microstructure of Pd_77.5Au₆Si_16.5alloy solidified both on board a Chinese Retrievable Satellite and on the earth is studied. Postmortem analyses of microstructure presented that the same types of phases, primary phase (Pd₃Si) and eutectics (Pd₃Si + Pd solid solution) were formed in both cases. But the phase morphologies were quite different. It was dendritic for the primary phase and lamellar for the eutectics under normal gravity condition. However, under microgravity condition the primary phase was granular and the eutectic was peculiar network. Detailed analysis showed that the differences in morphologies of the microstructure were due to the existence of gravity-induced buoyancy convection on the earth which increased the mass transport abilities and decreased the thickness of the solute boundary in front of the solid-liquid interface during solidification under normal gravity condition.     

Preparation and optical properties of GaSb nanoparticles embedded in SiO2 composite films

The composite films of GaSb nanoparticles embedded in SiO₂ matrices were fabricated by radio-frequency magnetron co-sputtering. Transmission electron microscope and X-ray diffraction pattern indicate that the GaSb nanoparticles were uniformly dispersed in SiO₂ matrices. Room temperature transmission spectra exhibit a blue shift of about 2.73 eV. The blue shift increases with decreasing size of GaSb nanoparticles, suggesting the existence of quantum size effects. Room temperature Raman spectra show that there is a larger Raman peak red shift and broadening of the composite films than that of bulk GaSb. This phenomenon is explained by photon confinement effect and tensile stress effect     

Diamond nucleation on surface of C60 thin layers

Diamond nucleation on the surface of C₆₀ thin layers and intermediate layer of Si substrates are studied by scanning electron microscopy (SEM). The cross-section SEM images of diamond films show that diamond grains really nucleate on the surface of C₆₀ thin layers. The SEM images of diamond nucleating sites show the nucleating aggregation of diamond on C₆₀ surfaces. The preferential oriented diamond films are observed. The plasma pretreatment of C₆₀ sublimating layers is a key factor for diamond nucleation.     

Formation of nanocrystalline Fe73.5Cu1Nb3Si13.5B9 alloy under high pressure

The formation of nanocrystalline Fe_73.5 Cu₁Nb₃Si_13.5 B₉ alloy by annealing an amorphous Fe_73.5Cu₁Nb₃Si_13.5B₉ alloy at a temperature of 823 K under pressures in the range of 1–5 GPa is investigated by using X-ray diffraction, electron diffraction, and transmission electron microscopy. The high pressure experiments are carried out in belt-type pressure apparatus. Experimental results show that the initial crystalline phase in these annealed alloys is a-Fe solid solution (named a-Fe phase below), and high pressure has a great influence on the crystallization process of the a-Fe phase. The grain size of the a-Fe phase decreases with the increase of pressure (P). The volume fraction of the a-Fe phase increases with increasing the pressure as the pressure is below 2 GPa, and then decreases (Pδ2 GPa). The mechanism for the effects of the high pressure on the crystallization process of amorphous Fe_73.5Cu₁Nb₃Si_13.5B₉ alloy is discussed Project supported by the National Natural Science Foundation of China (Grant No. 19674070) and the Natural Science Foundation of Hebei Province.     

Preparation, structure, magnetic properties and special magnetoresistance effect of Lao.67Sr0.33Mn03+δ/Pr0.7Cao.3 Mn03+δ/Lao.67Sro.33Mn03+δ trilayered thin films

The La_0,67Sr_0.33Mn0_{3 +δ}/Pr_0.7Ca_o.3Mn0_3+δ/La_0.67Sr_0.33Mn0_3+δ(LPL) trilayered films on (100)LaA-1O₃ substrates are prepared by using direct current (DC) magnetron sputtering method. The results obtained by means of X-ray powder diffractometer show that all films are the high quality epitaxial films. The results gained by SQUID magnetometer indicate that there is a magnetic coupling in the LPL trilayered films. The resistivities of LSMO, PC-MO and LPL films are measured using standard four-probe method and analyzed log_p-1/T curve. From the results it is concluded that the middle-layered PCMO which is ferromagnetic may play a role of intra-magnetic field, which weakens the paramagnetism of LSMO film, lowersp _max and enlargesT _p which is the transition temperature from metal to insulator, just as the applied magnetic field does. And the middle-layered PCMO may induce the change of the density of states in the LSMO’s gap. The two reasons above make the resistivity andT _p of the samples in zero field change with the thickness of PCMO layers. Project supported by the Chinese Academy of Sciences and the Foundation of State Science and Technology Commission of China.     

High temperature superconducting thin films for microwave filters

YBa₂Cu₃O_7-δ and Tl₂Ba₂CaCu₂O₈ thin films for microwave filters were synthesized by pulsed laser deposition and the two-step thalliation process. Substrate quality requirements and the relation of thin film morphology, microstructure with microwave surface resistance were discussed.     

Field dependence of magnetoresistance in epitaxial single-crystal La2/3Ca1/3MnO3-δ thin film

Epitaxial La_2/3Ca_1/3MnO₃ thin films were prepared on NdGaO₃(1lO) substrates by d.c. magnetron sputtering method. The measurements of magnetoresistance ρ(H) upon magnetic field at different temperatures were carried out in the field range of 0–8 T. It is found that ρ(H) obeys the following relations: when the temperature (T) is higher than the Curie temperature below and whenT is far WowT _c. It is suS8ested that the negative magnetoresistive effect is mainly due to enhancement of the magnetoconductance. Project supported by the National Natural Science Foundation of China (Grant No. 19504012) and the Chinese Academy of Sciences.     

Modeling of the voltage-controlled friction effect

Abtract A phenomenological model of the dependence of friction coefficient on external voltage is proposed based on experimental results of friction and electric current of three different tri-bopairs, Si₃N₄-ball/steel-disc, Si₃N₄-ball/brass-disc and SiO₂-ball/steel-disc, lubricated with zinc strearate suspension. It was found that the variation of friction coefficient correlates with the variation of electric current for all of the three tribopairs. The change in electric current is considered to be caused by the rate of electrochemical reactions occurring on the rubbing surface. By taking the electrochemical reaction into account in the total energy consumption, an expression for describing the relationship between the rates of friction coefficient and electric current is derived, and the constants included in the expression are determined through curve fitting of experimental data.     

Phonon spectroscopy and transport properties of Y1-x Nd x Sr2Cu2.7Mo0.3O7-δ

The Raman and infrared spectra, resistivity as well as thermoelectric power of Y_1-xNd_xSr₂Cu_2.7Mo_0.3 O₇ δ(.x =0, 0.1. 0.2. 0.5, 0.8 and 1.0) are studied carefully. It was found that the structure characteristics of RSr₂Cu_2.7Mo_0.3O₇ δ cuprates are different from those of RBa₂Cu₃0₇ δ. The variations of the microstructure in Y_1-x Nd_xSr₂Cu_2.7Mo_0.3O₇ δ with Nd-doping affect the carrier distribution. so as a result the superconductivity changes. Furthermore, it is pointed out that the microstructure variations with the large rare earth ionic substitution cause the widely existing rare earth ionic size effect in HTSC. Project supported by the National Natural Science Foundation of China and the National Center for R & D Superconductivity.     

Influence of Fe3+ on perovskite oxides: La2/3Ca1/3Mn1-x Fe x O3

The structure and magnetoresistance properties in sintered samples of La_2/3Ca_1/3Mn_1-x Fe _x O₃(0≤x≤0.84) are studied by using Mössbauer spectroscopy, XRD and magnetic measurement. There are antiferromagnetic interactions between Fe and its nearest neighbors (Fe, Mn) when 0 <x ≤0.67, which are important factors influencing the double-exchange between Mn³⁺ and Mn⁴⁺, Curie temperature, magnetic moment and GMR. It is suggested that the Mn³⁺ (Fe³⁺) /Mn⁴⁺ system also consists of magnetic clusters with different sizes.     

Epitaxial growth and electrical transport properties of La0.5Sr0.5Co03 thin films prepared by pulsed laser deposition

Epitaxial growth of the La_0.5Sr_{0.5 3}(LO) thin films has been realized on Lin3, SrTiC₃ and MgO substrates by pulsed laser deposition. The epitaxial growth behavior and the electrical transport properties of these films were studied systematically. The temperature dependencies of the resistivity of the film have been determined. Studies indicate that close dependencies exist between the crystal structures and the electrical transport properties of the epitaxial LSCO films, and that the epitaxial thin films are of low resistivity and metallic conductive features. The epitaxial films deposited on the LaA10₃ substrates at about 700 °C possess the optimal properties compared with the others. Discussions of the dependencies and the mechanisms of the epitaxial structures on the electrical transport properties of the LSCO films have been made. Project supported by the National Natural Science Foundation of China (Grant No. 19574003 and No. 19674001).     

Splitting extrapolation algorithm for first kind boundary integral equations with singularities by mechanical quadrature methods

The accuracy of numerical solutions near singular points is crucial for numerical methods. In this paper we develop an efficient mechanical quadrature method (MQM) with high accuracy. The following advantages of MQM show that it is very promising and beneficial for practical applications: (1) the O(h_max³) O(h_{\rm {max}}^{3}) convergence rate; (2) the O(h_max⁵)O(h_{\rm {max}}^{5}) convergence rate after splitting extrapolation; (3) Cond = O(h_min^-1)O(h_{\rm {min}}^{-1}); (4) the explicit discrete matrix entries. In this paper, the above theoretical results are briefly addressed and then verified by numerical experiments. The solutions of MQM are more accurate than those of other methods. Note that for the discontinuous model in Li et al. (Eng Anal Bound Elem 29:59–75, 2005), the highly accurate solutions of MQM may even compete with those of the collocation Trefftz method.