Excitation intensity and temperature‐dependent photoluminescence and optical absorption in Tl4Ga3InSe8 layered crystals

Photoluminescence (PL) spectra of Tl₄Ga₃InSe₈ layered crystals grown by Bridgman method have been studied in the wavelength region of 600‐750 nm and in the temperature range of 17‐68 K. A broad PL band centered at 652 nm (1.90 eV) was observed at T = 17 K. Variations of emission band has been studied as a function of excitation laser intensity in the 0.13 to 55.73 mW cm^‐2 range. Radiative transitions from donor level located at 0.19 eV below the bottom of conduction band to shallow acceptor level located at 0.03 eV above the top of the valence band were suggested to be responsible for the observed PL band. From X‐ray powder diffraction and optical absorption study, the parameters of monoclinic unit cell and the energy of indirect band gap were determined, respectively. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Infrared photoluminescence from TlGaS2 layered single crystals

Photolimuniscence (PL) spectra of TlGaS₂ layered crystals were studied in the wavelength region 500‐1400 nm and in the temperature range 15‐115 K. We observed three broad bands centered at 568 nm (A‐band), 718 nm (B‐band) and 1102 nm (C‐band) in the PL spectrum. The observed bands have half‐widths of 0.221, 0.258 and 0.067 eV for A‐, B‐, and C‐bands, respectively. The increase of the emission band half‐width, the blue shift of the emission band peak energy and the quenching of the PL with increasing temperature are explained using the configuration coordinate model. We have also studied the variations of emission band intensity versus excitation laser intensity in the range from 0.4 to 19.5 W cm^‐2. The proposed energy‐level diagram allows us to interpret the recombination processes in TlGaS₂ crystals. (© 2004 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Growth of CuInS2 single crystals from Sb2S3 and Bi2S3 solutions

The phase diagrams of the CuInS₂‐Sb₂S₃ and CuInS₂‐Bi₂S₃ systems were investigated using X‐ray powder diffraction and differential thermal analysis. Based on these results, the compositions for the growth of the CuInS₂ single crystals from CuInS₂‐Sb₂S₃ and CuInS₂‐Bi₂S₃ melts were selected and Bridgman crystal growth process was performed. The investigation of the obtained single crystals using X‐ray powder diffraction and optical absorption spectra indicates that the incorporation of the solvent atoms into the crystal lattice is absent. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Photoconductivity in Tl4S3 layered single crystals

Photoconductivity measurements are carried out in this work for single crystals of Tl₄S₃ compound by using both pulsed excitation (a.c) and steady state (a.c) methods in order to elucidate the nature of photoconductivity (PC) in this compound. Results are reported in the temperature range from 77 to 300 K, excitation intensity range from 1800 to 3300 Lux, applied voltage range from 8 to 14 V, and wavelength range from 840 to 1450 nm. Both of the ac‐photoconductivity (ac‐PC) and the spectral distribution of the photocurrent are studied at different values of light intensity, applied voltage and temperature. Dependencies of carrier lifetime on light intensity, applied voltage and temperature are also investigated as results of the ac‐PC measurements. By using the results of the dc‐photoconductivity (dc‐PC) measurements, the temperature dependence of the energy gap width is described. (© 2004 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Temperature quenching of photoluminescence of ordered GaInP2 alloy under different excitation densities

The photoluminescence (PL) emission from an epi‐structure containing an atomically ordered GaInP₂ layer and a GaAs layer was studied under excitation power densities of 0.03 – 3 W/cm²at temperatures of 10 to 300 K. The quenching of the integrated PL intensity from both: the GaInP₂and the GaAs layers is stronger under low excitation, than under high excitation density. The temperature dependence, however, have different shapes being the PL decay observed for the GaInP₂ layer stronger than that for the GaAs layer. Comparing the temperature dependence of the PL intensity from the ordered GaInP₂ and the GaAs layers under different excitation densities and analyzing them together, we conclude that the inhomogeneity of the ordered layer is responsible for the different temperature behavior of the GaInP₂ alloy PL emission. To explain the experimentally observed PL intensity temperature dependence an additional nonradiative recombination mechanism due to a thermally activated escape of the carriers from its confinement within regions of lower bandgap has to be taken into account. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Crystal data and some physical properties of Tl2InGaTe4 crystals

The room temperature crystal data, Debye temperature, dark and photoelectrical properties of the Bridgman method grown Tl₂InGaTe₄ crystals are reported for the first time. The X‐ray diffraction technique has revealed that Tl₂InGaTe₄ is a single phase crystal of tetragonal body‐centered structure belonging to the space group. A Debye temperature of 124 K is calculated from the results of the X‐ray data. The current‐voltage measurements have shown the existence of the switching property of the crystals at a critical voltage of 80 V. The dark electrical resistivity and Hall effect measurements indicated the n ‐type conduction with an electrical resistivity, electron density and Hall mobility of 2.49×10³ Ω cm, 4.76×10¹² cm^–3 and 527 cm²V^–1s^–1, respectively. The photosensitivity measurements on the crystal revealed that, the variation of photocurrent with illumination intensity is linear, indicating the domination of monomolecular recombination at room temperature. Moreover, the spectral distribution of the photocurrent allowed the determination of the energy band gap of the crystal studied as 0.88 eV. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Growth and crystal structure of the layered compound TlGaSe2

The semiconducting compound TlGaSe₂ was grown by solid state reaction technique. The crystal structure of this material was confirmed by single‐crystal X‐ray diffraction. TlGaSe₂ crystallizes in the monoclinic system with space group C2/c (No. 15), Z = 16 and unit cell parameters a = 10.779(2) Å, b = 10.776(1) Å, c = 15.663(5) Å, β = 99.993(6)°. The structural refinement converged to R(F) = 0.0719, R(F²) = 0.0652 and S = 1.17. The structure consists of a three‐dimensional arrangement of distorted TlSe₈ and GaSe₄ polyhedrons. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Growth and characterization of 4‐Aminopyridinium‐4‐nitro phenolate single crystals

Organic optical material 4‐Aminopyridinium‐4‐nitro phenolate (4AP4NP) has been synthesized, and single crystals of size 20 x 14 x 6 mm³ have been grown from acetone solvent at room temperature by solvent evaporation technique. The grown crystals have been characterized by X‐ray diffraction to determine the cell parameters, and by FT‐IR technique to confirm the formation of the expected compound. The crystal belongs to monoclinic crystal system with space group P2₁/a.The structural perfection of the grown crystals has been analyzed by high‐resolution X‐ray diffraction (HRXRD) rocking curve measurements. The thermal stability of the compound has been determined by TG‐DTA curves. The transmittance of 4AP4NP has been used to determine the refractive index n; the extinction coefficient K and both the real ε_r and imaginary ε_i components of the dielectric constant as functions of photon energy. The optical band gap of 4AP4NP is 2.4 eV. The dielectric and mechanical behavior of the specimen was also studied. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Thermally stimulated current observation of trapping centers in an undoped Tl4Ga3InSe8 layered single crystal

Thermally stimulated current measurements are carried out on as‐grown Tl₄Ga₃InSe₈ layered single crystal in the temperature range 10–160 K with different heating rates. Experimental evidence is found for two shallow trapping centers in Tl₄Ga₃InSe₈. They are located at 17 and 27 meV. The trap parameters have been determined by various methods of analysis, and they agree well with each other. It is concluded that in these centers retrapping is negligible, as confirmed by the good agreement between the experimental results and the theoretical predictions of the model that assumes slow retrapping. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Crystal structure of the quaternary alloy CuTaInSe3

The crystal structure of the quaternary compound CuTaInSe₃ belonging to the system (CuInSe₂)_1‐x(TaSe)_x with x= 0.5, was analyzed using X‐ray powder diffraction data. This material is isostructural with the CuFeInSe₃ compound, and crystallize in the tetragonal space group P42c (Nº 112), Z = 1, with unit cell parameters a = 5.7831(1) Å, c = 11.6227(4) Å, V = 388.71(2) ų. The Rietveld refinement of 18 instrumental and structural variables led to R_p = 8.0%, R_wp = 9.5%, R_exp = 6.3% and χ² = 1.5 for 4501 step intensities and 144 independent reflections. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Crystal growth and structure of KBi(WO4)2 single crystals

Potassium bismuth tungstate [KBi(WO₄)₂] single crystals have been grown by the top‐seeded solution growth technique. Bulk crystal with dimensions up to several centimeters is obtained for the first time. Several self‐flux systems have been used for the growth from the solution and the experiments using K₂W₂O₇ as a solvent are detailed. Powder and single crystal X‐ray diffraction of this crystal are reported. The structure refinement shows that KBi(WO₄)₂ crystallizes in the monoclinic space group C2/c, with a=10.837(3), b=10.586(3), c=7.622(2)Å, β=130.860(3)°, V=661.4(3)ų, and Z=4. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Powder study of propanthioamide dervative C8H6N2S2

The crystal structure of 2‐cyano‐3‐(2‐thienyl)prop‐2‐enethioamide (C₈H₆N₂S₂), a propanethioamide derivative was solved from high resolution laboratory X‐ray powder diffraction data collected at ambient conditions. Structure determination was performed by means of the global optimization method of simulated annealing at a resolution of 1.5 Å. Rietveld refinement yielded an R_WP value of 4.02% (P2₁/a, a = 15.8174(2) Å, b = 5.6502(1) Å, c = 11.0952(1) Å, β = 116.9923(7)°, V = 883.6(5) ų, Z = 4). The molecules are stacked in parallel layers and are stabilized by hydrogen bonds. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Studies on the growth and optical characterization of Tm3+‐doped BaY2F8 single crystals

The BaY₂F₈ crystals doped with different concentrations of Tm³⁺ ions were prepared by the temperature gradient technique (TGT). X‐ray powder diffraction was applied to analyze the phase. The cracking phenomenon along (010) and (100) planes of the crystals grown by temperature gradient technique was studied on the basis of the structure of BaY₂F₈ crystals. The absorption spectra were measured and investigated in the ultraviolet‐visible and near‐infrared ranges at room temperature. Several characteristic absorption bands of Tm³⁺‐doped BaY₂F₈ crystal were observed. The emission and excitation spectra were obtained and investigated at room temperature and 12 K, showing the characteristic emission peaks of Tm³⁺ ions. The temperature dependence of Photoluminescence curve was also investigated in the range of 12–296 K. The luminescence intensity of emission bands decreased with increasing temperature, while the effective bandwidth increased. The up‐conversion spectrum excited at 650 nm was recorded and up‐conversion mechanism was analyzed in detail. The result showed the purple, green and yellow emissions corresponding to ³P₁→³F₃, ¹D₂→³H₅ and ³P₀→¹G₄ transitions, respectively.     

Structure and photoluminescence properties of SrWO4 3D microspheres synthesized by the surfactant‐assisted hydrothermal method

In this paper, we report large‐scale high‐quality SrWO₄ 3D microspheres synthesized in aqueous solutions under mild conditions with cetyl trimethyl ammonium bromide as a simple cationic surfactant. These crystals have been characterized by X‐ray diffraction, transmission electron microscopy and field emission scanning electron microscopy techniques. The crystal growth processes were employed to investigate the formation mechanism of SrWO₄ 3D microspheres. Room‐temperature photoluminescence indicated that the as‐prepared SrWO₄ 3D microcrystals had strong emission peaks at about 432 and 505 nm, respectively.     

Temperature dependence of lattice parameters of SBN single crystals in the vicinity of their structural phase transitions

Changes of lattice parameters of Sr_xBa_1‒xNb₂O₆ (0.35 < x < 0.72) solid solution single crystals were measured as a function of temperature. The X‐ray Bond’ method was used to carry out very precise measurements of the lattice parameters. Fine correlations between values of the lattice parameter and the Sr concentration in the solid solution of Sr_xBa_1‒xNb₂O₆ single crystals are found. A conventional analysis of lattice parameter data in terms of spontaneous strain and strain/order parameter coupling shows that a normal structural phase transition does occur. While the ferroelectric system (SBN26) displays a nearly tricritical behavior, β ≈ 0.20, the relaxor one (SBN61) complies with the two‐dimensional Ising‐model‐like criticality, β ≈ 0.17.     

Temperature‐tuned band gap energy and oscillator parameters of Tl2InGaSe4 semiconducting layered single crystals

The optical properties of Tl₂InGaSe₄ layered single crystals have been studied through the transmission and reflection measurements in the wavelength range of 500‐1100 nm. The analysis of room temperature absorption data revealed the presence of both optical indirect and direct transitions with band gap energies of 1.86 and 2.05 eV, respectively. Transmission measurements carried out in the temperature range of 10‐300 K revealed that the rate of change of the indirect band gap with temperature is γ = – 4.4 × 10^‐4 eV/K. The absolute zero value of the band gap energy was obtained as E_gi(0) = 1.95 eV. The dispersion of the refractive index is discussed in terms of the single oscillator model. The refractive index dispersion parameters: oscillator wavelength and strength were found to be 2.53 × 10^–7 m and 9.64 × 10¹³ m^–2, respectively. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Solubility and crystallization of BaHPO4 crystals

A study of growth of barium hydrogen phosphate (BaHPO₄) crystal from solution is reported. The raw materials of barium hydrogen phosphate were successfully synthesized through chemical reaction in water. The solubility in HCl and H₃PO₄ solution were studied. It increased when acid concentration and temperature become higher, and the fitted curve of solubility is nearly a line. The acid concentration affects crystalline morphology of BaHPO₄ crystal. The crystallization is well when the acid solution ranges from 0.5 to 0.8M. © 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim     

Flux growth and low temperature dielectric relaxation in piezoelectric Pb[(Zn1/3Nb2/3)0.91Ti0.09]O3 single crystals

Single crystals of Pb[(Zn_1/3Nb_2/3)_0.91Ti_0.09]O₃ (PZNT 91/9) have been grown by flux method after modifications in temperature profile, flux ratio and addition of excess ZnO/B₂O₃ which resulted in enhanced perovskite yield (more than 95%). Only a few crystals showed the presence of pyrochlore phase/variation in composition. A comparative characterization of these crystals were carried out in respect of piezoelectric charge coefficient d₃₃, dielectric constant, ac conductivity and hysteresis loop after cutting and poling the crystals along [001] direction. The total activation energy for conduction has been found to increase with Ti‐content in the sample. The effect of ZnO on growth behavior has been analyzed. A detailed analysis of PZNT (91:9) has been carried out at low temperature in respect of the various thermodynamic parameters related to the dielectric relaxation mechanism, like optical dielectric constant, static dielectric constant, free energy of activation for dipole relaxation, enthalpy of activation and relaxation time, have been calculated in the vicinity of transition temperature in the lower temperature region. The activation energy for relaxation at ‐10 and ‐49 °C have been found to be 0.09 and 0.02 eV respectively. The results were analyzed and a detailed dielectric analysis and low temperature relaxation behavior of PZNT crystals were interpreted. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Growth and characterization of large La1‐xPbxMnO3+δ (x=0.32–0.35) crystals

Large crystals of La_0.63Pb_0.37Mn O_3+δ with small La(Pb)‐ deficiency of about 0.005‐0.01 at.% were grown by high temperature solution growth method. The structure of the grown crystals was determined as rhombohedral with R‐3 space group by single‐crystal X‐ray diffractometry. The surface morphology of the crystals and the exact chemical composition was examined by scanning electron microscopy and energy dispersive X‐ray analysis methods, respectively. The IR‐transmission spectrum reveals the presence of Mn³⁺O₆‐ and Mn⁴⁺O₆‐ octahedra in the lattice of La_0.63Pb_0.37Mn O_3+δ crystals. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Influence of substrate temperature on microcrystalline structure and optical properties of ZnTe thin films

ZnTe thin films were deposited onto well‐cleaned glass substrates kept at different temperatures (Ts = 303, 373 and 423 K), by vacuum evaporation method under the pressure of 10^–5 Torr. The thickness of the film was measured by quartz crystal monitor and verified by the multiple beam interferometer method. The structural characterization was made using X‐ray diffractometer with filtered CuKα radiation. The grain sizes of the microcrystallines in films increases with increase in substrate temperature. The strain (ε), grain size (D) and dislocation density (δ) was calculated and results are discussed based on substrate temperature. Optical behaviour of the film was analyzed from transmittance spectra in the visible region (400–800 nm). The optical transition in ZnTe films is direct and allowed type. The optical band gap energy shows an inverse dependence on substrate temperature and thickness. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)