Versuche mit einem tiefgekühlten Zwillingshohlkathoden-Interferometer-Spektrometer—VI: Untersuchung der Kathodenzerstäubung

The introduction summarizes methods for investigation of cathode sputtering and factors influencing cathode sputtering. The sputtering of plane and hollow cathodes cooled with liquid air and made of aluminium were studied as a function of voltage, current intensity, pressure of argon gas and the quality of the surface. The quantity of aluminium deposited on a cool surface of glass was measured by spectrophotometry after dissolution with diluted NaOH solution. The surface of the cathode was studied with an electron microscope. The results show that the degree of cathode sputtering increases directly proportional to the voltage using both types of cathodes, but that the quantity of sputtered aluminium using a hollow cathode with the same experimental parameters is seven times less than with a plane cathode.     

Analysis of graphitized cast irons by optical emission spectroscopy: matrix effects in the glow discharge and the spark excitation

Graphite has a substantially lower sputtering rate in glow discharge than have the other structural components of graphitized cast irons, which leads to a structure-related matrix effect, consisting of an increasing relative surface coverage by graphite of the sample surface during the initial stage of the GD-OES analysis, and, consequently, to an increasing carbon signal intensity. This effect exists inherently in any multicomponent system with different sputtering rates of the components and should be taken into account in GD-OES quantification. A simple theory is presented to describe quantitatively the changes in relative contributions of different phases to the flux of the sputtered material entering the discharge and a formula is presented, expressing elemental intensity changes as a function of sputtering rates and stoichiometry of the structural components.After reaching the steady state, there are no substantial differences in the GD-OES signal response of the analyzed elements between the graphitic and the white cast irons. To reach this steady state, long preburn times and high sputtering rates have to be used. In the spark atomization/excitation, there are very strong and complex structure-related matrix effects, which make the analysis of graphitic cast irons by spark excitation impossible.     

Emission characteristics of Cu in Dc voltage modulation applied glow discharge optical emission spectrometry.

In order to obtain the depth profile of a thin film, we investigated the emission characteristics of a voltage modulation glow discharge to optimize the modulation parameters (modulation voltage, offset voltage, and modulation frequency). In this study, a phase-sensitive detection method with a lock-in amplifier to the modulation technique led to a higher sensitivity and a larger signal-to-noise ratio in the emission analysis compared to the normal dc amplification method. Upon increasing the maximum voltage, the emission intensity of the Cu atomic line (CuI 239.34 nm) increased linearly at a modulation voltage of 400 V and an offset voltage of 300 V. On the other hand, the emission intensity was gradually reduced when a modulation frequency increased. It is advantageous for surface analysis that the voltage modulation technique gives a lower sputtering rate rather than the conventional dc discharge.     

RFA as control method of the reactive sputtering process of TiN films

In-situ X-ray fluorescence (XRF) analysis has been used to control the deposition process of Ti-N films on steel substrates during reactive sputtering. The analysis system consisted of a tungsten X-ray tube, secondary targets of Cu, Fe and Cr and a Si (Li) detector. The sputtering off the Ti target has been determined indirectly by plasma monitoring using optical emissions spetroscopy (OES) of the Ti atoms, and the film growth has been measured directly by XRF analysis of the surface mass of Ti atoms deposited on the substrate. For zero bias voltage and varying N₂ flow the increment of surface mass per deposition time has been found to incrase linearly with the intensity of the OES signal of Ti. A negative bias voltage U_B100 V changes strongly the growth rate by resputtering effects, especially in the range where stoichiometric TiN is formed.     

Specific Features of Energy Dispersive X-Ray Electron Probe Microanalysis in the Low Vacuum Mode

Experimental data on the generation and detection of characteristic X-radiation of elements in electron probe microanalysis of dielectric samples in the low vacuum mode without the deposition of conducting coatings are discussed. The main advantage of the considered method of analysis is the stability of the intensity ratio between diagnostic analyte lines in the wide range of currents of the electron probe and gas phase pressure in the chamber in the range 60–130 Pa, sufficient for obtaining undistorted images of the surface of dielectrics. The stability of the intensity ratio ensures obtaining correct data of the quantitative analysis of nonconducting samples without the deposition of conducting coatings. The main features of low-vacuum microanalysis for the range of gas phase pressures used are discussed, which can create additional difficulties in the study. Among such features is a possibility of the manifestation of reflexes of gas-phase elements, significant underestimation of the relative emission intensity from lighter elements in the composition of the studied samples, loss of scanning locality in the analysis of small sites on the sample surface. An example of the correct quantitative elemental analysis of a dielectric surface without the deposition of an electroconductive coating for a number of aluminosilicates is presented.     

Emission characteristics of Grimm-style glow discharge plasmas with helium matrix plasma gas containing small amounts of nitrogen

Glow discharge plasmas with helium–(0–16%) nitrogen mixed gas were investigated as an excitation source in optical emission spectrometry. The addition increases the sputtering rate as well as the discharge current, because nitrogen molecular ions, which act as primary ions for the cathode sputtering, are produced through Penning-type ionization collisions between helium metastables and nitrogen molecules. The intensity of a silver atomic line, Ag I 338.29 nm, is monotonically elevated along with the nitrogen partial pressure added. However, the intensities of silver ionic lines, such as Ag II 243.78 nm and Ag II 224.36 nm, gave different dependence from the intensity of the atomic line: Their intensities had maximum values at a nitrogen pressure of 30 Pa when the helium pressure and the discharge voltage were kept at 2000 Pa and 1300 V. This effect is principally because the excitations of these ionic lines are caused by collisions of the second kind with helium excited species such as helium metastables and helium ion, which are quenched through collisions with nitrogen molecules added to the helium plasma. The sputtering rate could be controlled by adding small amounts of nitrogen to the helium plasma, whereas the cathode sputtering hardly occurs in the pure helium plasma.     

Emission characteristics of Grimm-style glow discharge plasmas with helium matrix plasma gas containing small amounts of nitrogen

Glow discharge plasmas with helium–(0–16%) nitrogen mixed gas were investigated as an excitation source in optical emission spectrometry. The addition increases the sputtering rate as well as the discharge current, because nitrogen molecular ions, which act as primary ions for the cathode sputtering, are produced through Penning-type ionization collisions between helium metastables and nitrogen molecules. The intensity of a silver atomic line, Ag I 338.29 nm, is monotonically elevated along with the nitrogen partial pressure added. However, the intensities of silver ionic lines, such as Ag II 243.78 nm and Ag II 224.36 nm, gave different dependence from the intensity of the atomic line: Their intensities had maximum values at a nitrogen pressure of 30 Pa when the helium pressure and the discharge voltage were kept at 2000 Pa and 1300 V. This effect is principally because the excitations of these ionic lines are caused by collisions of the second kind with helium excited species such as helium metastables and helium ion, which are quenched through collisions with nitrogen molecules added to the helium plasma. The sputtering rate could be controlled by adding small amounts of nitrogen to the helium plasma, whereas the cathode sputtering hardly occurs in the pure helium plasma.     

Sputtering and emission intensity of copper alloys in a grimm glow lamp

The effects of the metallurgical structure and the aluminium content of copper—aluminium alloy (1–12% Al) on the sputtering and intensities of spectral lines in the Grimm glow lamp are reported. The electrical current and sputtering yield decreased linearly with increasing aluminium content; the intensities of the Al I lines depended linearly on the amount of aluminium in the sputtering yield at a fixed voltage and argon pressure. The structure affected the intensities of the Al I and Cu I lines but not the intensity ratio (Al I/Cu I) for about 100 s after burn-off. Working curves for aluminium for samples of different structure were very similar.     

多孔硅表面钝化对其发光性能的影响

报道多孔硅（PS）的表面钝化对其光致发光（PL）和电致发光（EL）的影响。PL和EL谱表明,经钝化处理的PS的PL和EL强度明显增强,且发光峰位较大蓝移;存放实验表明,经钝化处理的PS的PL和EL发光强度和发光峰位具有较好的稳定性;I～V曲线显示,经钝化处理的PS发光器件具有较低的启动电压。这些结果表明：用钝化处理的方法是提高PS的PL和EL强度和稳定性及改善其器件性能的有效途径。     

Radio frequency glow discharge source with integrated voltage and current probes used for sputtering rate and emission yield measurements at insulating samples

Radio frequency glow discharge optical emission spectroscopy (RF-GD-OES) is routinely used for the chemical analysis of solid samples. Two independent electrical signals from the discharge are required for quantification. When sputtering insulating samples, the voltage over the discharge is not directly measurable. The coupling capacity of the sample is required in order to calculate the discharge voltage. A procedure is outlined where the coupling capacity is determined using an electrical measurement without discharge. The calculated time-dependent discharge voltage and current are evaluated using a plasma equivalent circuit. An insulating sample is sputtered at constant cathode voltage and current. The emission yield for an aluminium line is comparable to that of conducting reference material.     

Composition of Ti-N films: EDX analysis during the sputtering process

Summary Energy dispersive X-ray (EDX) analysis was applied in-situ for measurements of composition, surface mass and deposition rate of Ti atoms during reactive sputtering. Electron beam excitation was used for the determination of composition and X-ray fluorescence (XRF) for the surface mass determination. Intensity measurements of the optical emission of Ti atoms agree well with the deposition rate of Ti atoms measured by XRF. The influences of nitrogen mass flow and negative bias substrate voltage on concentration and sputtering rate were investigated in homogeneous TiN_x films and TiN_x/TiN_y multilayers.     

Emission and sputtering characteristics of Ne-Ar mixed gas glow discharge plasmas.

The emission characteristics of several Cu lines emitted from a Ne-Ar mixed gas glow discharge plasma were investigated. The addition of small amounts of Ar to a Ne plasma increases the sputtering rate of a Cu sample because Ar ions, which work as the impinging ions for cathode sputtering, are predominantly produced through Penning ionization collisions between Ne metastables and Ar atoms. Ar addition also elevates the number density of electrons in the plasma. These changes occurring in the Ne-Ar mixed gas plasma result in enhanced emission intensities of the Cu lines. The Cu II 270.10-nm and the Cu II 224.70-nm lines yield different intensity dependence on the Ar partial pressure added. This phenomenon is because these Cu II lines are excited principally through different charge transfer processes: collisions with Ne ions for the Cu II 270.10-nm line and collisions with Ar ions for the Cu II 224.70-nm line. The shape of sputtered craters in the Ne-Ar glow discharge plasma was measured. The depth resolution was improved when Ar was added to a Ne plasma because the crater bottoms were flatter with larger Ar partial pressures.     

Removal of Ar+ beam‐induced damaged layers from polyimide surfaces with argon gas cluster ion beams

An Ar Gas Cluster Ion Beam (GCIB) has been shown to remove previous Ar⁺ ion beam‐induced surface damage to a bulk polyimide (PI) film. After removal of the damaged layer with a GCIB sputter source, XPS measurements show minor changes to the carbon, nitrogen and oxygen atomic concentrations relative to the original elemental bulk concentrations. The GCIB sputter depth profiles showed that there is a linear relationship between the Ar⁺ ion beam voltage within the range from 0.5 to 4.0 keV and the dose of argon cluster ions required to remove the damaged layer. The rate of recovery of the original PI atomic composition as a function of GCIB sputtering is similar for carbon, nitrogen and oxygen, indicating that there was no preferential sputtering for these elements. The XPS chemical state analysis of the N 1s spectra after GCIB sputtering revealed a 17% damage ratio of altered nitrogen chemical state species. Further optimization of the GCIB sputtering conditions should lead to lower nitrogen damage ratios with the elemental concentrations closer to those of bulk PI. Copyright © 2010 John Wiley & Sons, Ltd.     

Cluster ion beam profiling of organics by secondary ion mass spectrometry – does sodium affect the molecular ion intensity at interfaces?

The use of cluster ion beam sputtering for depth profiling organic materials is of growing technological importance and is a very active area of research. At the 44th IUVSTA Workshop on “Sputtering and Ion Emission by Cluster Ion Beams”, recent results were presented of a cluster ion beam depth profile of a thin organic molecular layer on a silicon wafer substrate. Those data showed that the intensity of molecular secondary ions is observed to increase at the interface and this was explained in terms of the higher stopping power in the substrate and a consequently higher sputtering yield and even higher secondary ion molecular sputtering yield. An alternative hypothesis was postulated in the workshop discussion which may be paraphrased as: “under primary ion bombardment of an organic layer, mobile ions such as sodium may migrate to the interface with the inorganic substrate and this enhancement of the sodium concentration increases the ionisation probability, so increasing the molecular ion yield observed at the interface”. It is important to understand if measurement artefacts occur at interfaces for quantification as these are of great technological relevance – for example, the concentration of drug in a drug delivery system. Here, we evaluate the above hypothesis using a sample that exhibits regions of high and low sodium concentration at both the organic surface and the interface with the silicon wafer substrate. There is no evidence to support the hypothesis that the probability of molecular secondary ion ionisation is related to the sodium concentration at these levels. © Crown copyright 2008. Reproduced with the permission of Her Majesty's Stationery Office. Published by John Wiley & Sons, Ltd.     

Auger peak shape analysis of AlN film grown by ammonia plasma

An AlN film was grown using ammonia plasma and characterized with Auger electron spectroscopy in depth profile mode using argon sputtering. After growth of AlN on a 6061 Al substrate in a plasma chamber, the sample was removed from the vacuum and transported to an ultrahigh vacuum surface analysis system. Detailed AES spectra of Al, O and N are presented as a function of sputtering time (depth). Relative concentration changes were observed for the KLL O and KLL N signals but there were no significant lineshape changes, however significant relative concentration and lineshape changes associated with the LVV Al signal were observed. Lineshape analysis indicates the presence of the following bonds: Al–O (56 eV), Al–N (59 eV) and Al–Al (68 eV). Copyright © 2003 John Wiley & Sons, Ltd.     

Ion beam sputtering techniques for high-resolution concentration depth profiling with glancing-incidence X-ray fluorescence spectrometry

The application of ion beam sputtering in combination with glancing-incidence X-ray fluorescence spectrometry for high-resolution concentration depth profiling is presented. Two new techniques are described: first, in the “bevel-etching technique”, the sample depth profile is uncovered on the sample surface either by sputter etching with a gradient of the ion beam intensity or by varying the sputtering time by moving a shutter in front of the sample; second, in the “deposition technique”, samples are etched uniformly and the sputtered material is deposited on a moving substrate. The bevelled sample and also the material deposited on the substrate are characterized (laterally resolved) by glancing incidence X-ray fluorescence spectrometry. The apparatus and techniques are described in detail. Typical experiments showing the advantages of and problems with the two techniques are discussed. The achievable depth resolutions, 1.5 nm with the bevel-etching technique and 1.4 nm with the deposition technique, are comparable with the best results from other depth profiling methods.     

Characterization of a circular thin film plasma source for atomic emission spectroscopy

A plasma source for analytical atomic emission spectroscopy is described based on the electrical vaporization by capacitive discharge of a thin Ag film deposited on a polycarbonate membrane filter. The source is designed for the rapid, direct analysis of solid powder samples collected by filtration from fluid media. A concentric electrode system consisting of a ring-shaped graphite electrode placed on the thin film surface and a pointed graphite rod located under the membrane substrate results in a plasma with cylindrical symmetry and a radial current path. Discharge current vs time and intensity vs time profiles are compared for the concentric electrode geometry and the linear geometry used in previous studies. Two values of tank circuit inductance also are compared. Both neutral-atom and ion line radiation from an Mn sample are more intense when the center electrode is initially cathodic. The inside diameter of the ring-shaped electrode and thus the surface area of the Ag film exposed to the plasma have relatively little effect on the intensity of continuum background and line radiation from a sample deposited near the center of the film. Particle size effects, while significant, are smaller than with the linear electrode geometry. Analytical curves are presented for several lines using both a low-inductance and a high-inductance discharge. Log-log slopes range from about 0.85 to 1.05 for ion lines. Detection limits are somewhat poorer than with the linear geometry.     

Sputtering of aluminium alloys in the grimm glow lamp for emission spectrochemical analysis

The effects of surface roughness, grain size and target thickness on the cathodic sputtering and emission intensities of spectral lines in the Grimm glow lamp have been investigated for samples of aluminium alloys. The intensities of the alloying elements changed with discharge time because the θ phase (Al²Cu) and β phase (Si) are sputtered selectively. The selective sputtering of the θ phase in an Al—8% Cu alloy can be decreased and the intensities can be made constant during discharge by polishing the target surface with coarse sand paper before discharge. When a fine-grained Al—4.9% Cu—7.2% Si alloy sample was used as a target, the intensities remained nearly constant during discharge. The sample preparation for obtaining fine-grained samples involves casting the melt in a metal mould. The thickness of disk samples influences not only the sample temperature but the current, sputtering and intensities. Special attention should be paid to the thickness for the determination of copper in aluminium alloys.     

Photolysis of zinc azide in the solid state

The photolysis of anhydrous zinc azide prepared by (1) dehydration of Zn(N₃)₂·2H₂O and (2) precipitation by acetone from aqueous solution, under the action of high pressure mercury arc is reported here. The pressure of nitrogen developed during photolysis under steady-state conditions at constant intensity is a linear function of t^1/2 in both the samples. The rate of photolysis is a linear function of intensity at constant temperature. A detailed analysis of the dark rate suggests that the dependence on t^1/2 should be due to the diffusion of nitrogen from the reaction site to the surface of the solid azide. An appropriate mathematical analysis is presented. The linear dependence of the rate of photolysis on the intensity of irradiation is interpreted in terms of the reaction of a trapped exciton with an adjacent azide ion. Absence of any detectable photoconduction in the wavelength range of the irradiating radiation suggests that excitons are the most probable reactive species. The sample of zinc azide obtained by the first method decomposes faster than the other under identical conditions, and has a slightly lower energy of activation of 1.4 kcal/mole compared to 1.75 kcal/mole for the second. These differences are discussed in terms of the defect concentrations of the two azide samples.     

紫外光离子源-高场不对称波形离子迁移谱检测环境中挥发性有机物

本研究采用紫外光离子源-高场不对称波形离子迁移谱(UV-FAIMS)快速检测环境中挥发性有机物.选取苯和对二甲苯为研究对象,并分析了分离电压、流速等因素对其分离识别的影响.实验结果表明:当分离电压值为0～1200 V时,苯和对二甲苯信号强度逐渐降低,而特征补偿电压值却逐渐增加.实验选取分离电压值为900 V,当载气流速为0～240 L/h时,苯和对二甲苯的特征离子峰信号强度逐渐增加,当载气流速为0～120 L/h时,苯和对二甲苯团簇峰信号强度增加,当载气流速为120～240 L/h时,苯的团簇峰信号强度增加,而对二甲苯的团簇峰信号强度降低.此外,对样品浓度、信号强度与噪声的比值进行探讨,获得UV-FAIMS检测苯的检测限为0.011mg/m3.