Track revelation and optical properties of pentaerythritol tetrakis (allyl carbonate) plastic for application as nuclear track detector: effects of gamma radiations

The etching conditions of an indigenously prepared thin film of pentaerythritol tetrakis(allyl carbonate) (PETAC) were standardised for the use as a nuclear track detector. The optimum etching times in 6?N NaOH at 70°C for the appearance of fission and alpha tracks recorded in this detector from a ²⁵²Cf solid source were found to be 30 min and 1.50?h, respectively. The experimentally determined values for the bulk and track-etch rates for this detector in 6?N NaOH at 70°C were found to be 1.7?±?0.1 and 88.4?±?10.7?µm/h, respectively. From these results, the important track etching properties such as the critical angle of etching, the sensitivity and the fission track registration efficiency were calculated and compared with the commercially available detectors. The activation energy value for bulk etching calculated by applying Arrhenius equation to the bulk etch rates of the detector determined at different etching temperatures was found to be 0.86?±?0.02?eV. This compares very well with the value of about 1.0?eV reported for most commonly used track detectors. The effects of gamma irradiation on this new detector in the dose range of 200–1000?kGy have also been studied using bulk etch rate technique. The activation energy values for bulk etching calculated from bulk etch rates measurements at different temperatures were found to decrease with the increase in gamma dose indicating scission of the detector due to gamma irradiation. The optical band gap of this detector was also determined using UV–visible spectrometry and the value was found to be 4.37?±?0.05?eV.     

Etchability of Latent Fission Fragment Tracks in CR-39

We report the chemical etching behaviour of the CR-39 polymer detector exposed to fission fragments of 252Cf describing etchability of latent tracks, which are like nanocylinders. The fission fragment exposed detectors were etched in 1-7 N NaOH water solutions at temperatures 50-80℃ for 45 min in the case of track length and 180 min in the case of track diameter measurements. The reduced etch rate S （called here etchability） is determined using experimental results for all etching conditions and the etching conditions with the highest reduced etch are obtained. Physics and energetics of bulk and track etching are discussed. Possible effects causing spurious changes in determination of activation energy of etching are investigated.     

Track recording properties of soda glass detector for accelerated heavy ions

The etch pit diameters of soda glass detector samples exposed to ₅₄ ¹³² Xe-ions of different energies are measured for different etching times after etching the detector in a ‘new etchant’ free of the adverse effect of the etch product layer. The dependence of track diameter on the energy and on the energy loss, dE/dx of ₅₄ ¹³² Xe-ion in soda glass has been presented. The energy resolution of soda glass and the critical angle for etching of fission fragment tracks in glass detectors have also been determined. The maximum etched track length of ₅₄ ¹³² Xe-ion in soda glass has been compared with the theoretical range. The effects of different annealing conditions on bulk etch rate of glass detector and on diameters of ₅₄ ¹³² Xe-ion tracks have been presented. Experimental results show that there is a decrease in track etch rate, etching efficiency and etchable range of ₅₄ ¹³² Xe-ions with annealing. The annealing of oblique tracks shows that the vertical tracks are more stable than the oblique tracks.     

The system Na2CO3–MgCO3 at 3 GPa

It was suggested that Na–Mg carbonates might play a substantial role in mantle metasomatic processes through lowering melting temperatures of mantle peridotites. Taking into account that natrite, Na₂CO₃, eitelite, Na₂Mg(CO₃)₂, and magnesite, MgCO₃, have been recently reported from xenoliths of shallow mantle (110–115?km) origin, we performed experiments on phase relations in the system Na₂CO₃–MgCO₃ at 3?GPa and 800–1250°C. We found that the subsolidus assemblages comprise the stability fields of Na-carbonate?+?eitelite and eitelite?+?magnesite with the transition boundary at 50?mol% Na₂CO₃. The Na-carbonate–eitelite eutectic was established at 900°C and 69?mol% Na₂CO₃. Eitelite melts incongruently to magnesite and a liquid containing about 55?mol% Na₂CO₃ at 925?±?25 °C. At 1050 °C, the liquid, coexisting with Na-carbonate, contains 86–88?mol% Na₂CO₃. Melting point of Na₂CO₃ was established at 1175?±?25 °C. The Na₂CO₃ content in the liquid coexisting with magnesite decreases to 31?mol% as temperature increases to 1250°C. According to our data, the Na- and Mg-rich carbonate melt, which is more alkaline than eitelite, can be stable at the P–T conditions of the shallow lithospheric mantle with thermal gradient of 45?mW/m² corresponding to temperature of 900 °C at 3?GPa.     

Formation mechanism of Si(1 0 0) surface morphology in alkaline fluoride solutions

Formation mechanism of Si(1 0 0) surface morphology in alkaline fluoride solutions was investigated both theoretically and experimentally. By analysis of Raman spectra of silicon wafer surfaces and three kinds of etching solutions (NaOH, NaOH/NH₄F, and NaOH/NH₄F/Na₂CO₃) with and without addition of Na₂SiO₃·9H₂O, no Si-F bond is formed, F⁻ and CO₃²⁻ ions accelerate the condensation of Si-OH groups. Based on experimental results, it is proposed that bare silicon and silicon oxide coexist at the wafer surface during etching process and silicon oxide of different structure, size, and site at the surface manufacture different surface morphology in alkaline fluoride solution.     

Effects of Li2CO3 on the sintering behavior and piezoelectric properties of Bi2O3-excess (Bi0.5Na0.5)0.94Ba0.06TiO3 ceramics

(Bi_0.5Na_0.5)_0.94Ba_0.06TiO₃ ceramics doped with Li₂CO₃ and Bi₂O₃ as sintering aids were manufactured, and their micro structural, dielectric and piezoelectric properties were investigated. All specimens could be well sintered at a low-temperature of 1080 °C. The bulk density of the specimens doped with a small amount of Li₂CO₃ was enhanced. The dielectric and piezoelectric properties of ceramics were investigated with different amounts of Li₂CO₃ substitutions. High electrical properties of d₃₃ = 167 pC/N, k_p = 0.34, P_r = 40 μC/cm² and E_c = 38 kV/cm were obtained from the specimen containing 0.1 mol% of Li₂CO₃ sintered at 1080 °C.     

Luminescent characteristics of LiCaBo3:M (M=Eu, Sm, Tb, Ce, Dy) phosphor for white LED

LiCaBO₃:M (M=Eu³⁺, Sm³⁺, Tb³⁺, Ce³⁺, Dy³⁺) phosphors were synthesized by a normal solid-state reaction using CaCO₃, H₃BO₃, Li₂CO₃, Na₂CO₃, K₂CO₃, Eu₂O₃, Sm₂O₃, Tb₄O₇, CeO₂ and Dy₂O₃ as starting materials. The emission and excitation spectra were measured by a SHIMADZU RF-540 UV spectrophotometer. And the results show that these phosphors can be excited effectively by near-ultraviolet light-emitting diodes (UVLED), and emit red, green and blue light. Consequently, these phosphors are promising phosphors for white light-emitting diodes (LEDs). Under the condition of doping charge compensation Li⁺, Na⁺ and K⁺, the luminescence intensities of these phosphors were increased.     

The system Na2CO3–CaCO3–MgCO3 at 6 GPa and 900–1250°C and its relation to the partial melting of carbonated mantle

In order to constrain the Na₂CO₃–CaCO₃–MgCO₃ T–X diagram at 6?GPa in addition to the binary and pseudo-binary systems we conducted experiments along the Na₂CO₃–Ca_0.5Mg_0.5CO₃ join. At 900–1000°C, melting does not occur and isothermal sections are presented by one-, two- and three-phase regions containing Ca-bearing magnesite, aragonite, Na₂CO₃ (Na₂) and Na₂(Ca_1–0.9Mg_0-0.1)_3-4(CO₃)_4-5 (Na₂Ca_3-4), Na₄(Ca_1–0.6Mg_0–0.4)(CO₃)₃ (Na₄Ca), Na₂(Ca_0-0.08Mg_1–0.92)(CO₃)₂ (Na₂Mg) phases with intermediate compositions. The minimum melting point locates between 1000°C and 1100°C. This point would resemble that of three eutectics: Mgs–Na₂Ca₃–Na₂Mg, Na₂Mg–Na₂Ca₃–Na₄Ca or Na₂Mg–Na₄Ca–Na₂, in the compositional interval of [45Na₂CO₃·55(Ca_0.6Mg_0.4)CO₃]–[60Na₂CO₃·40Ca_0.6Mg_0.4CO₃]. The liquidus projection has seven primary solidification phase regions for Mgs, Dol, Arg, Na₂Ca₃, Na₄Ca, Na₂ and Na₂Mg. The results suggest that extraction of Na and Ca from silicate to carbonate components has to decrease minimum melting temperature of carbonated mantle rocks to 1000–1100°C at 6?GPa and yields Na-rich dolomitic melt with a Na# (Na₂O/(Na₂O?+?CaO?+?MgO))?≥?28?mol%.     

Discovery of new etchants for CR-39 detector

After reporting the excellent etching properties of molten Ba(OH)2 8H2O as an etchant, we now report some more new and efficient etchants for CR-39 detector. CR-39 detectors were irradiated with fission fragments and alpha particles with a thin 252Cf source. The irradiated detectors were etched in a number of our newly introduced etching solutions as well as in conventionally used 6 M NaOH at 70 degrees C. The newly prepared etching solutions included NaOH/ethanol and NaOH/1-propanol. Processing conditions were optimized for these etchants. From fission and alpha track diameters, bulk etching velocity (VB), track etching velocity (VT), etching efficiency (eta) and their activation energies were determined and compared with that obtained for 6M NaOH at 70 degrees C.     

Dry etching characteristics of GaN using Cl2/BCl3 inductively coupled plasmas

ICP power/RF power, operating pressure, and Cl₂/BCl₃ gas mixing ratio are altered to investigate the effect of input process parameters on the etch characteristics of GaN films. The etch selectivity of GaN over SiO₂ and photoresist is studied. Although higher ICP/RF power can obtain higher GaN/photoresist etch selectivity, it can result in faceting of sidewall and weird sidewall profile due to photoresist mask erosion. Etch rates of GaN and SiO₂ decrease with the increase of operating pressure, and etch selectivity of GaN over SiO₂ increases with the increasing operating pressure at fixed ICP/RF power and mixture component. The highest etch selectivity of GaN over SiO₂ is 7.92, and an almost vertical etch profile having an etch rate of GaN close to 845.3 nm/min can be achieved. The surface morphology and root-mean-square roughness of the etched GaN under different etching conditions are evaluated by atomic force microscopy. The plasma-induced damage of GaN is analyzed using photoluminescence (PL) measurements. The optimized etching process, used for mesa formation during the LED fabrication, is presented. The periodic pattern can be transferred into GaN using a combination of Cl₂/BCl₃ plasma chemistry and hard mask SiO₂. Patterning of the sapphire substrate for fabricating LED with improved extraction efficiency is also possible using the same plasma chemistry.     

Effects of radiations on the characteristics of alpha and fission tracks in CR-39 detectors

Abstract

The effects of neutron, gamma and alpha radiations on the alpha and fission fragment tracks registration and revelation properties of CR-39 detectors (CR-39 and CR-39(DOP) were studied. It was found that the ratio of the bulk etch rate of irradiated to unirradiated (V_G(irr.)/V_G(unirr.) detectors is linearly dependent on dose. An exponential decrease in fission track densities with increase in neutron fluence was observed. The ratio of V_G(irr.)/V_G(unirr.) was found to be high in CR-39 than that in CR-39(DOP) exposed to the same reactor neutron fluence. The decrease in fission track densities with increase in neutron fluence was observed to be faster in CR-39 than in CR-39(DOP). This indicates that doping with dioctyl phthalate improves the radiation resistance of CR-39 detectors. It was observed that in detectors exposed to an alpha flux of the order of 9.36 × 10⁶ / cm², the fission track density was reduced by 11% and thereafter it remained constant. The results also indicate that thermal neutron fluence up to 7.01 ×10¹¹ neutrons/cm² does not affect the alpha and fission track densities. I.R. spectra were also studied to find out the nature of chemical changes produced by these radiations on CR-39.     

Measurement of bulk etch rate of LR115 detector with atomic force microscopy

Equations for calculating track parameters have been proposed, which invariably involve the track etch rate V_t and the bulk etch rate V_b. The present study measured V_b for the LR115 solid-state nuclear track detector using atomic force microscopy (AFM). The detectors were partially masked using rubber cement and then etched in 2.5 N NaOH solution at 60°C for time periods ranging from 5 to 40 min. The rubber cement was then peeled off and cross-sectional images of the LR115 detectors were obtained by AFM. V_b has been found to have different values below and beyond the etching time of about 13.5 min, with the values of 0.0555 and 0.0875 μm min⁻¹, respectively. The increase in V_b with the etching time can be explained by a diffusion-etch model, in which the additional damage of the detector material is due to those etchant ions diffused into the detector over time. Now that V_b has been determined, this can be combined with the track etch rate V_t to calculate track parameters.     

Solid state reaction synthesis and luminescence properties of Dy-doped Gd2Mo3O9 phosphor

Gd₂Mo₃O₉ phosphors with various Dy³⁺ concentrations were synthesized by a traditional solid-state reaction using Na₂CO₃ as a flux. The influence of reaction temperature and Dy³⁺-doping concentration on the crystal structure of the phosphors was examined by XRD (X-ray diffraction). The effect of Dy³⁺-doping concentration on the emissions of Mo-O bond and Dy³⁺ was experimentally investigated. The energy transfers between host and Dy³⁺ ions, and between Dy³⁺ ions were analyzed based on both the Van Uitert and I-H models. The chromatic properties of the phosphors were also discussed.     

Dry etching of CuCrO2 thin films

Highly conducting films of p-type CuCrO₂ are attractive as hole-injectors in oxide-based light emitters. In this paper, we report on the development of dry etch patterning of CuCrO₂ thin films. The only plasma chemistry that provided some chemical enhancement was Cl₂/Ar under inductively coupled plasma conditions. Etch rates of ∼500 Å min⁻¹ were obtained at chuck voltages around −300 V and moderate source powers. In all cases, the etched surface morphologies were improved relative to un-etched control samples due to the smoothing effect of the physical component of the etching. The threshold ion energy for the onset of etching was determined to be 34 eV. Very low concentrations (≤1 at.%) of residual chlorine were detected on the etched surfaces but could be removed by simple water rinsing.     

Effects of stirring on the bulk etch rate of CR-39 detector

It is well established that the bulk etch rates for solid state nuclear track detectors are affected by the concentration and the temperature of the etchant. Recently, we found that the bulk etch rate for the LR 115 detector to be affected by stirring during etching. In the present work, the effects of stirring on the bulk etch rate of the CR-39 detector is investigated. One set of sample was etched under continuous stirring by a magnetic stirrer at 70°C in a 6.25 N NaOH solution, while the other set of samples was etched without the magnetic stirrer. After etching, the bulk etch thickness was measured using Form Talysurf PGI (Taylor Hobson, Leicester, England). It was found that magnetic stirring did not affect the bulk etch of the CR-39 detector, which was in contrast to the results for the LR 115 detector.     

Some more new etchants for CR-39 detector

Recently, several new etchants have been reported for CR-39 detector (Molten Ba(OH)2. 8H2O as an etchant for CR-39 detector, Radiat. Meas. 37 (2003) 205; Discovery of new etchants for CR-39 detector, Radiat. Meas. (2004)). We have made further progress in this direction and have unveiled two more new etchants which are reported in this article. CR-39 detectors were irradiated with fission fragments and alpha particles from a thin 252Cf disc source. The irradiated detectors were then etched in our newly introduced etching solutions as well as in conventionally used 6 M NaOH aqueous solution at 70 degrees C. The newly prepared etching solutions included NaOH dissolved in methanol and NaOH dissolved in methanol + water. Optimum values of NaOH concentration in methanol as well as in methanol + water were determined. Optimum etching temperatures were also determined for both the above-mentioned etchants. From fission and alpha track diameters, bulk etching rate (VB), track etching rate (VT) and etching efficiency (eta) were determined and compared with that obtained for 6 M NaOH at 70 degrees C. Both the newly introduced etchants were found more efficient than the conventionally used 6 M aqueous NaOH (64%) at 70 degrees C and have relatively much smaller etching time.     

Photoluminescence spectra of thenardite Na2SO4 activated with rare-earth ions, Ce, Sm, Tb, Dy and Tm

Five Na₂SO₄:RE³⁺ phosphors activated with rare-earth (RE) ions (RE³⁺=Ce³⁺, Sm³⁺, Tb³⁺, Dy³⁺ and Tm³⁺) were synthesized by heating natural thenardite Na₂SO₄ from Ai-Ding Salt Lake, Xinjiang, China with small amounts of rare-earth fluorides, CeF₃, SmF₃, TbF₃, DyF₃ and TmF₃, at 920 °C in air. The photoluminescence (PL) and optical excitation spectra of the obtained phosphors were measured at 300 and 10 K. In the PL spectrum of Na₂SO₄:Ce³⁺ at 300 K, two overlapping bands with peaks at 335 and 356 nm due to Ce³⁺ were first observed. Narrow bands observed in PL and excitation spectra of Na₂SO₄:RE³⁺ (RE³⁺=Sm³⁺, Tb³⁺, Dy³⁺ and Tm³⁺) phosphors were well identified with the electronic transitions within the 4fⁿ (n=5, 8, 9 and 12) configurations of RE³⁺. The existence of excitation bands with high luminescence efficiency at wavelengths shorter than 230 nm is characteristic of Na₂SO₄:RE³⁺ (RE³⁺=Sm³⁺, Tb³⁺, Dy³⁺ and Tm³⁺) phosphors. The obtained results suggest that these phosphors are unfavorable as the phosphor for usual fluorescence tubes, i.e., mercury discharge tubes, but may be favorable as the phosphor for UV-LED fluorescent tubes and as cathodoluminescence, X-ray luminescence and thermoluminescence phosphors.     

DC discharge experiment in an Ar/N2/CO2 ternary mixture: A laboratory simulation of the Martian ionosphere's plasma environment

A low-pressure DC plasma discharge sustained in a 1.6%Ar–2.7%N₂–95.3%CO₂ ternary mixture is studied. This plasma was generated in a total pressure range from 1.0 to 4.0 Torr, a power of 6.3 W and a 12 l/min flow rate of gases. The electron temperature was found to be 8.41 eV and the ion density, in the order of 10⁹ cm⁻³. The species observed in the plasma mixture were CO₂, CO₂⁺, CN, CO, CO⁺, O₂, O₂⁺, N₂, N₂⁺, NO, C⁺, Ar and Ar⁺. At the pressure range in the present study, the species observed do not change their intensity due to an increase in the pressure and they separate in two groups according to their emission intensity: the band of the first group (CO₂, CO₂⁺ and CN) is approximately a factor of 3 more intense than that of the second group (CO, CO⁺, O₂, O₂⁺, N₂, N₂⁺, NO, C⁺, Ar and Ar⁺). The behavior of the emission intensities may be correlated to the constant ion density and electron temperature measured. Also, we observed the same constant behavior in the ratios of the neutral and positive species intensities to that of the N₂ intensity, as a function of pressure. This may suggest that the different rate coefficients and cross sections of elastic collision, excitation and de-excitation of electronic or vibrational levels, inelastic and superelastic collisions of electrons with the gas phase and products, neutral–neutral interactions, resonant charged transfer processes, recombination, to mention some, to produce these species change in the same proportion, as a function of the pressure to keep the relative ratios of the species almost constant.     

Study of 18 40 Ar ion tracks in cellulose nitrate

Sample of cellulose nitrate (Russian) is exposed to ₁₈ ⁴⁰ Ar ions. The bulk etch rate has been studied at different etching temperatures and the activation energy for bulk etch rate has been calculated. The etched track lengths are measured for different etching times. The energy loss rate and range of ₁₈ ⁴⁰ Ar ions in CN(R) is also calculated. The critical threshold value for etchable track in CN(R) is determined by comparing the theoretical and experimental values of track length. The response curve of CN(R) is also presented.