Electrochemical deposition of Bi2Te3-based thin films

The electrochemical reduction processes on stainless-steel substrates from an aqueous electrolyte composed of nitric acid, Bi³⁺, HTeO₂⁺, SbO⁺ and H₂SeO₃ systems were investigated using cyclic voltammetry. The thin films with a stoichiometry of Bi₂Te₃, Bi_0.5Sb_1.5Te₃ and Bi₂Te_2.7Se_0.3 have been prepared by electrochemical deposition at selected potentials. The structure, composition, and morphology of the films were studied by X-ray diffraction (XRD), environmental scanning electron microscopy (ESEM) and electron microprobe analysis (EMPA). The results showed that the films were single phase with the rhombohedral Bi₂Te₃ structure. The morphology and growth orientation of the films were dependent on the deposition potentials.     

Silicon doping of MBE-grown GaAs films

Two concentration ranges of silicon doping in MBE-grown GaAs films have been investigated in some detail. In lightly doped films, with a free-electron concentration of ≈10¹⁶cm^?3, low-temperature photoluminescence spectra have been analysed to develop a model to account for spectral features previously attributed to Ge and Si acceptor levels. In heavily doped films, a maximum free-electron concentration of ≈7×10¹⁸ cm^?3 has been obtained, which is only rather weakly dependent on growth conditions and the nature of the arsenic species (As₂ or As₄). Transmission electron microscopy has shown that no significant precipitation effects occur when higher Si fluxes are used but there is evidence for autocompensation. The maximum PL intensity (300 K) is found at a lower free electron concentration then with Sn-doped films, and is more sharply peaked, but there is no evidence for an anomalous Moss-Burstein shift.     

Characteristics of Ti0.97Co0.03O2:Sb0.01 dilute magnetic semiconducting thin films deposited at 500 °C by pulsed laser deposition

Epitaxial Ti_0.97Co_0.03O₂:Sb_0.01(TCO:Sb) films were deposited on R-Al₂O₃ (1 1 0 2) substrates at 500 °C in various deposition pressures by pulsed laser deposition. The solubility of cobalt within the films increases with decreasing deposition pressure at a deposition temperature of 500 °C. The TCO:Sb films deposited at 5×10⁻⁶ Torr exhibit a p-type anomalous Hall effect having a hole concentration of 6.1×10²²/cm³ at 300 K. On the other hand, films deposited at 4×10⁻⁴ Torr exhibits an n-type anomalous Hall effect having an electron concentration of about 1.1×10²¹/cm³. p- or n-type DMS characteristics depends on the change of the structure of TCO:Sb films and the solubility of Co is possible by controlling the deposition pressure.     

Lactic acid aided electrochemical deposition of c-axis preferred orientation of zinc oxide thin films: Structural and morphological features

Compact and homogeneous c-axis preferred orientation of zinc oxide (ZnO) films on indium tin oxide (ITO) coated glass have been prepared electrochemically at −1.2 V vs. Ag|AgCl in a weak acidic condition from 0.06 M Zn(NO₃)₂ with 3 mM lactic acid (LA) added. LA was found having strong influence on the electrodeposition of c-axis preferred orientation of zinc oxide films. Other experimental variables such as deposition temperature, potential, and precursor concentration were also conducted in this article. Among these variables, it was found that precursor concentration of zinc nitrate influenced significantly on growth direction and crystal diameter of zinc oxide. Cyclic voltammetry was used to observe the electrochemistry of the deposition. Crystallinities of the films were examined by X-ray diffractometer. The morphologies of zinc oxide films were observed with a field emitting scanning electron microscope. Optical characteristics of zinc oxide layers were measured with UV-vis spectrophotometer. The band gap of the deposited zinc oxide thin films was evaluated from the Tauc relationship of (αhν)² vs. hν, which was found to be 3.31 eV.     

氩气掺入对类金刚石沉积过程的影响

在电子助进化学气相沉积(EACVD)类金刚石薄膜中,使用和比较CH₄/H₂与CH₄/H₂/Ar两种体系,用静电探针测量这两种体系的电子温度、电子密度,结果表明,在CH₄/H₂/Ar体系中,电子密度较高,使成膜的速率增加。 关键词：     

The growth mechanism and supercapacitor study of anodically deposited amorphous ruthenium oxide films

In the present study, ruthenium oxide (RuO₂) thin films were deposited on the stainless steel (s.s.) substrates by anodic deposition. The nucleation and growth mechanism of electrodeposited RuO₂ film has been studied by cyclic voltammetry (CV) and chronoamperometry (CA). The deposited films were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM) and energy dispersive analysis by X-rays (EDAX) for structural, morphological, and compositional studies. The electrochemical supercapacitor study of ruthenium oxide thin films have been carried out for different film thicknesses in 0.5 M H₂SO₄ electrolyte. The highest specific capacitance was found to be 1190 F/g for 0.376 mg/cm² film thickness.     

Growth and structural characterization of YMnO3 thin films grown by pulsed liquid injection MOCVD on Si and SrTiO3 substrates

Optimum parameters for the growing of YMnO₃ films by pulsed liquid injection metalorganic chemical vapor deposition have been studied. Si substrates were used for the optimization of the deposition process. X-ray diffraction (XRD) and transmission electron microscopy (TEM) results show that polycrystalline single phase YMnO₃ films can be obtained for an optimal ratio of Y and Mn on the injected solution and either amorphous, metastable orthorhombic, and/or hexagonal YMnO₃ phases can be obtained depending on the deposition temperature and precursors ratio. In a second stage, YMnO₃ films were grown on SrTiO₃ substrates. Pure epitaxial orthorhombic YMnO₃ phase was confirmed by XRD. The films microstructure, characterized by scanning electron microscopy and TEM, shows a columnar growth. Each columnar grain grows epitaxially with three possible orientations.     

Electrosynthesis and characterization of CdSe thin films: Optimization of preparative parameters by photoelectrochemical technique

CdSe thin films have been electrodeposited potentiostatically onto stainless-steel and fluorine-doped tin oxide-coated glass substrates from an aqueous acidic bath using cadmium acetate ((CH₃COO)₂Cd·2H₂O) as a Cd ion source. Preparative parameters such as deposition potential, solution concentration, bath temperature, pH of the electrolytic bath and deposition time have been optimized by using photoelectrochemical (PEC) technique to obtain well adherent and uniform thin films. The electrodeposits were dark brown in colour. The films have been characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM) and optical absorption techniques. XRD studies reveal that films are polycrystalline, with hexagonal crystal structure. SEM shows that the films are compact, with spherical grains. Optical absorption studies reveal that the material exhibits a direct optical transition having band gap energy ∼1.72 eV. PEC study shows that the films are photoactive.     

Room-temperature epitaxial growth of CeO2(001) films on YSZ buffered Si(001) substrates

2 (001) epitaxial thin films deposited on Si(001) with yttria-stabilized zirconia buffers have been obtained for the first time at room temperature by pulsed-laser deposition. The influence of oxygen pressure on the crystal quality of CeO₂ was studied for the films deposited at 100 °C. The rocking curve full width at half maximum of the CeO₂(002) peak for films deposited at room temperature and 100 °C was between 1° and 2°, for oxygen pressures below 3×10^-2 mbar. The best crystal quality was obtained at around 3×10^-3 mbar. Epitaxial growth at room temperature was confirmed by cross-sectional transmission electron microscopy. Scanning electron microscopy and atomic force microscopy revealed very smooth surfaces for oxygen pressure below 3×10^-2 mbar, with rms roughness values around 0.3 nm over 5 μm×5 μm. Received: 25 September 1997/Accepted: 22 April 1998     

Role of deposition temperature and Sn content on structural,optical & electrical properties of In2O3 thin films

High quality indium tin oxide (ITO) thin films (In_2−xSn_xO₃: x = 0, 0.1 and 0.2) have been grown by using pulsed laser deposition technique on quartz substrates. The structural, morphological, optical and electrical investigations of deposited films have been studied as a function of substrate deposition temperatures and the Sn compositions. X-ray diffraction (XRD) and high-resolution transmission electron microscopy (HRTEM) patterns affirm that each film is polycrystalline in nature with cubic bixbyite single phase structure which preferentially oriented along (222) Miller plane. The existence of chemical bonding and functional groups was investigated by FTIR spectroscopy. The TEM micrograph of films (@450°C) for x = 0.1 and x = 0.2 reveal spherical morphology with average particle size 63 nm and 51 nm, respectively. The SEM and AFM images show uniform flower like surface morphology and well-demonstrated nanosized spherical particles, respectively. The widening of the band gap of all the films were exclusively defined by Burstein-Moss shift. The Hall measurement reveals that each film is degenerate with n-type semiconducting nature along with high mobility. Low resistivity (2.024 × 10⁻⁴ Ω-cm) and high transparency (92.58%) along with high carrier concentration (8.915 × 10²⁰ cm⁻³) were optimized for x = 0.1 film at 450°C deposition temperature.     

Structure and microstructure of epitaxial Sr n Fe n O3 n −1 films

Thin films of SrFeO_{3??? x} (0?≤?x?≤?0.5) (SFO) grown on a (LaAlO₃)_0.3 (SrAl_0.5Ta_0.5O₃)_0.7 (LSAT) substrate by pulsed laser deposition have been structurally investigated by electron diffraction and high resolution transmission electron microscopy for different post-deposition oxygen treatments. During the deposition and post-growth oxidation, the oxygen-reduced SFO films accept extra oxygen along the tetrahedral layers to minimize the elastic strain energy. The oxidation process stops at a concentration SFO_2.875 and/or SFO_2.75 because a zero misfit with the LSAT substrate is reached. A possible growth mechanism and phase transition mechanism are suggested. The non-oxidized films exhibit twin boundaries having a local perovskite-type structure with a nominal composition close to SFO₃.     

高气压反射式高能电子衍射仪监控脉冲激光外延氧化物薄膜

在超高真空分子束外延（MBE）生长技术中，反射式高能电子衍射仪（RHEED）能实时显示半导体和金属外延生长过程，给出薄膜表面结构和平整度的信息，成为MBE必备的原位表面分 析仪.为了研究氧化物薄膜如高温超导（YBa₂Cu₃O₇） 、铁电薄膜（Sr_1-xBa_x TiO₃）及它们的同质和异质外延结构的生长机理，获得高质量的符合各种应用 需要的氧化 物多层薄膜结构，在常规的制备氧化 关键词： 高温超导薄膜 RHEED     

Selective fabrication of n‐ and p‐type SnO films without doping

Undoped n‐ and p‐type tin monoxide (SnO) films have been selectively fabricated by pulsed laser deposition with a Sn target and careful control of oxygen partial pressure. The films are epitaxially grown in optimal growth conditions on yttria‐stabilized zirconia (YSZ) substrates with out‐of‐plane and in‐plane orientation relationships of (001)_SnO//(001)_YSZ and [110]_SnO//[100]_YSZ, respectively. Both Seebeck and Hall measurements show consistent results on the carrier types of the films. The electron Hall mobility is approximately 11 cm²/Vs at room temperature and the carrier activation energy is 0.14 eV for the n‐type film. The growth at increased oxygen partial pressure yields p‐type films, demonstrating the selective fabrication of both n‐ and p‐type SnO films without doping. (© 2015 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

Growth mechanism and optoelectronic properties of nanocrystalline In2O3 films prepared by chemical spray pyrolysis of metal-organic precursor

Thin films of indium oxide, In₂O₃, were deposited by chemical spray pyrolysis technique, using aqueous alcoholic solutions of indium acetylacetonate (In-acac) precursor, on glass substrates kept at temperatures between 300 and 500 °C. The structural, optical, and electrical properties have been investigated as a function of deposition temperature, precursor concentration, carrier gas pressure, and substrate-to-nozzle distance. X-ray diffraction studies showed that the formation of nanocrystalline In₂O₃ films is preferentially oriented along (2 2 2) plane. The surface morphological modifications with substrate temperature were observed using scanning electron and atomic force microscopic studies. Optical transmittance behavior of the films in the visible and IR region was strongly affected by the deposition parameters. The optical band gap values observed are between 3.53 and 3.68 eV. The long wavelength limit of refractive index is 1.83. The Hall mobility is found to vary from 23 to 37 cm²/V s and carrier density is found nearly constant at about 10²⁰ cm⁻³.     

Structural and electrical properties of polycrystalline PbZr0.5Ti0.5O3 films deposited on La0.5Sr0.5CoO3 coated silicon by sol-gel process

La_0.5Sr_0.5CoO₃ (LSCO) films have been grown on Si (100) by a metalorganic chemical liquid deposition (MOCLD) technique using lanthanum acetate, strontium acetate and cobalt acetate as the starting materials. Subsequent PbZr_0.5Ti_0.5O₃ (PZT) films were deposited onto LSCO films by a modified sol-gel method. Field-emission scanning electron microscopy and X-ray diffraction analysis show that PZT and LSCO films are polycrystalline and entirely perovskite phase. At an applied electric field of 250 kV/cm, the Pt/PZT/LSCO capacitor shows no polarization fatigue after 3×10⁹ switching cycles and an internal electric field; the remnant polarization P_r and the coercive field E_c are about 22 μC/cm² and 73 kV/cm, respectively. The dielectric constant of PZT films is 650 at a frequency of 1 kHz. Received: 20 February 2001 / Accepted: 6 June 2001 / Published online: 30 August 2001     

Electrical conduction in nanostructured carbon and carbon-metal films grown by supersonic cluster beam deposition

We have studied the electrical conduction in nanostructured carbon (ns-C) films produced by deposition of a supersonic beam of neutral carbon clusters. The d.c. conduction properties of these films have been measured in situ during the deposition process and ex situ as a function of the temperature in vacuum and in ambient of different gases (H₂, N₂, CH₄, He). The ns-C films exhibit an ohmic behavior with a room temperature resistivity in the range of 10⁷-10⁹ W{\rm\Omega} cm depending on the growth and storage conditions. Conductivity vs. temperature measured in vacuum in the range 290-400 K is characterized by activation energies in the range of 0.3-1.7 eV, the current response does not differ significantly in gas atmosphere. Nanocomposite carbon-metal films have been obtained by adding small amounts of metallorganic precursors containing molybdenum and cobalt during the formation of carbon clusters prior to deposition. The films are characterized by porous carbon networks containing small metal and metal carbide clusters. Electrical transport properties of these films have been studied as a function of temperature, gas pressure and relative humidity. In particular, the electrical conductivity of the sample produced with molybdenum showed to be much sensitive to changes in gas pressure and relative humidity, being characterised by fast and reversible responses.     

Hydrogen template assisted electrodeposition of sub-micrometer wires composing honeycomb-like porous Pb films

High surface area porous Pb films are electrodeposited using a hydrogen bubble dynamic template. The influence of the experimental parameters on the morphology features such as the pore size, wall thickness, and sub-micrometer size features is investigated. Two structural transformations between sub-micrometer wires and particles obtained by adjusting the HClO₄ concentration are observed. At a low HClO₄ concentration, the growth of sub-micrometer wires is favored. The deposition of particles or wires covered by particles is observed at higher H⁺ concentrations. The addition of sodium citrate as an additive facilitates the preservation of Pb in the form of wires. Adjusting the concentration of Pb(ClO₄)₂·3H₂O influences the mass transfer of Pb and affects its morphology. At low concentrations, the deposition of porous Pb films composed of porous wires is shown. The additional deposition of particles on wires is observed at high concentrations. The formation process of honeycomb-like porous structures is revealed by analysis of films deposited during different deposition time. The influence of the current density on the micro and sub-micrometer scale morphologies is presented.     

Deposition and stoichiometry control of Nd-doped gadolinium gallium garnet thin films by combinatorial pulsed laser deposition using two targets of Nd:Gd<Subscript>3</Subscript>Ga<Subscript>5</Subscript>O<Subscript>12</Subscript> and Ga<Subscript>2</Subscript>O<Subscript>3</Subscript>

We have demonstrated pulsed laser deposition of Nd-doped gadolinium gallium garnet on Y₃Al₅O₁₂ by the simultaneous ablation of two separate targets of Nd:Gd₃Ga₅O₁₂ (GGG) and Ga₂O₃. Such an approach is of interest as a method of achieving stoichiometry control over films whilst the growth parameters are kept constant and optimal for high quality crystal growth. We show here how the stoichiometry and resultant lattice parameter of a film can be controlled by changing the relative deposition rates from the two targets. Films have been grown with enough extra Ga to compensate for the deficiency that commonly occurs when depositing only from a GGG target. We have also grown crystalline GGG films with an enriched Ga concentration, and this unconventional approach to film stoichiometry control may have potential applications in the fabrication of films with advanced compositionally graded structures.     

Crystalline-phase-dependent red emission behaviors of Gd2O3:Eu3+ thin-film phosphors

Gd₂O₃:Eu³⁺ luminescent thin films have been grown on Al₂O₃(0001) substrates using pulsed-laser deposition. The films grown at different deposition conditions showed different crystalline phases, surface morphologies and luminescent characteristics. Both cubic and monoclinic crystalline phases were observed for the Gd₂O₃:Eu³⁺ films, and the crystalline structure and the surface morphology of the films were highly dependent on the oxygen pressure and substrate temperature. The cubic system showed a higher luminescence than the monoclinic system. The luminescence characteristics were strongly influenced by not only the crystalline structure but also the surface morphology of the films. The photoluminescencebrightness data obtained from Gd₂O₃:Eu³⁺ films indicate that Al₂O₃(0001) is a promising substrate for growth of high-quality Gd₂O₃:Eu³⁺ thin-film red phosphor. In particular, the Gd₂O₃:Eu³⁺ films showed a much better photoluminescence behavior than a Y₂O₃:Eu³⁺ films with the same thickness. PACS 78.20.-e; 78.55.-m; 78.66.-w     

Synthesis and characterization of electro-crystallized Cd-Sn-Se semiconductor films for application in non-aqueous photoelectrochemical solar cells

In the present investigation, thin films of CdSnSe have been developed on transparent conducting oxide (TCO) coated glasses by electrolytic deposition. The controlled incorporation of Sn in the semiconducting layer have been achieved by varying the concentration of Sn²⁺ from 5 to 22 g/l of SnCl₂ in the deposition bath. The semiconductor film grown on the glass substrate consisted of n-type CdSnSe semiconductor compounds (alloyed and/or mixed type) in the form of highly dispersed, spherically shaped polycrystallites as detected from X-ray diffraction (XRD) studies, atomic force microscopy (AFM) and scanning electron microscopy (SEM). Their optoelectronic properties were determined by spectroscopic analysis and electrochemical measurements. The performance characteristics of a photoelectrochemical (PEC) cell fabricated with the prepared photo-electrode and ferrocene-ferricenium redox couple in dimethyl formamide were observed under dark and illuminated conditions. The prepared semiconductor films were electrochemically characterized through capacitance-voltage measurements. The film that was obtained from 10 g/l of Sn²⁺ in the bath, showed an optimum spectral sensitivity and corresponded to a film thickness of 0.65 μm and stoichiometry of Cd:Sn:Se as 1:1:1. The pronounced PEC activity of this film compared to the others was attributed to the combined effect of space charge properties, electron-hole recombination processes and transfer of charges through the Helmholtz layer at the semiconductor-solution interface.