Acoustic waves in (0 0 1) anisotropic polytype heterostructures

We have studied the acoustic waves of (0 0 1) polytype heterostructures formed by slabs of cubic crystals. We have considered symmetric and asymmetric heterostructures formed by AlN, GaN and InN in the zinc-blende structure due to the potential applications of these materials. The anisotropy of the materials has been taken into account and the different propagation directions ranging from the [1 0 0] to the [1 1 0] have been considered. We obtain the dispersion relations for different propagation directions. The coupling between the spatial components of the elastic displacements is different for symmetry and general propagation directions. The spatial localization of the modes in the heterostructures has also been obtained.     

Angular distributions of atoms sputtered from NiAl{1 1 0} and Ni{1 0 0}

Using the laser post-ionization surface analysis technique, I have for the first time studied angular distributions of Ni and Al atoms sputtered from NiAl{1 1 0}. Emission angular distributions from Ni{1 0 0} have also been measured. I have observed preferential emissions of Ni and Al atoms along 〈1 1 1〉 and 〈1 0 0〉crystallographic directions for NiAl{1 1 0} and of Ni atoms along 〈1 1 0〉 and 〈1 0 0〉 directions for Ni{1 0 0}. The observed preferential ejections can be explained in terms of the theory of focusing-collision sequences. Because of the difference in surface binding energy between Al and Ni atoms, preferential ejection angles of Ni atoms are slightly different from those of Al atoms along the 〈1 1 1〉 ejections. For NiAl, the 〈1 1 1〉 preferential ejections were less prominent than the 〈1 0 0〉 preferential ejections and this can be related to the low efficiency of momentum transfer in Ni-Al collision sequences along 〈1 1 1〉 lattice directions. The low efficiency of momentum transfer due to the mass mismatch can also be responsible for the experimental observation that the preferential ejections in the alloy were less prominent than those in the Ni metal.     

Ab initio calculations and dynamical properties of the Se:InP(1 1 0) and Te:InP(1 1 0)

We present results of ab initio theoretical investigations of the structural and dynamical properties of the Se:InP(1 1 0) and Te:InP(1 1 0) surfaces, by employing the plane wave pseudopotential method, the local density approximation of the density functional theory, and a linear response scheme. For both adsorbates we have used the so-called exchange geometry (the chalcogen atoms replacing P in the top two atomic layers). A detailed discussion is provided of the relaxed surface geometry and phonon dispersion curves along two principal symmetry directions. It is found that the adsorption of Se (or Te) atoms on InP(1 1 0) leads to phonon modes in the acoustic-optical gap region for bulk InP. The characteristic atomic displacement patterns of selected phonon modes on these surfaces have been compared and contrasted with those on the clean InP(1 1 0) surface.     

AlN, GaN, AlxGa1 − xN nanotubes and GaN/AlxGa1 − xN nanotube heterojunctions

Semiconductor optoelectronic devices based on GaN and on InGaN or AlGaN alloys and superlattices can operate in a wide range of wavelengths, from far infrared to near ultraviolet region. The efficiency of these devices could be enhanced by shrinking the size and increasing the density of the semiconductor components. Nanostructured materials are natural candidates to fulfill these requirements. Here we use the density functional theory to study the electronic and structural properties of (10,0) GaN, AlN, Al_xGa_1 − xN nanotubes and GaN/Al_xGa_1 − xN heterojunctions, 0<x<1. The Al_xGa_1 − xN nanotubes exhibit direct band gaps for the whole range of Al compositions, with band gaps varying from 3.45 to 4.85 eV, and a negative band gap bowing coefficient of −0.14 eV. The GaN/Al_xGa_1 − xN nanotube heterojunctions show a type-I band alignment, with the valence band offsets showing a non-linear dependence with the Al content in the nanotube alloy. The results show the possibility of engineering the band gaps and band offsets of these III-nitrides nanotubes by alloying on the cation sites.     

Spin excitations in exchange-dominated regime on (1 0 0) and (1 1 0) antiferromagnetic surfaces

Theoretical investigations in the context of Heisenberg model have been made for (1 0 0) and (1 1 0) magnetic surface dynamics for a semi-infinite antiferromagnet geometry. The calculations apply to the exchange dominated regime and are based on a spin-wave operator and matching technique within the framework of non-interacting spin-wave theory. The theoretical formalism developed here does not include either relaxation or reconstruction at the surface and no electronic effects have been considered. Dispersion curves of surface spin-waves are obtained within a single framework by matching the evanescent and travelling solutions, respectively, obtained from the secular equation and satisfying the boundary conditions brought about by the surface. The excitation spectrum of the surface spin-waves has been obtained and compared with that for bulk spin-waves. The quantized bulk modes of the same energy travelling to and away from the surface are related to one another by reflection coefficients, for which sum rules are derived. The numerical results for the evolution of acoustic and optical modes are presented for two different surface planes, namely (1 0 0) and (1 1 0). The findings reported here show that: (i) the reduced coordination number for atoms near the surface as well as the surface orientation play an obvious and crucial part in the surface spin-wave spectra; (ii) the evolutions of bulk as well as surface modes undergo significant changes as a function of the bulk-surface exchange integrals for a given direction of propagation of the spin-wave modes along the surface.     

Novel mesoscale defect structure on NiO(1 0 0) surfaces by atomic force microscopy

Cleaved NiO(1 0 0) surfaces were imaged with atomic force microscopy (AFM) to determine defect concentrations and morphology. Random 〈0 1 0〉 and 〈0 0 1〉 oriented steps, which have been previously characterized, were the most common defect observed on the cleaved surface and formed with step heights in multiples of 2.1 Å, the Ni-O nearest-neighbor distance, and terrace widths in the range of 25-100 nm. In addition, the surface showed novel mesoscale (∼0.5-2 μm) square pyramidal defects with the pyramid base oriented along 〈1 0 0〉 symmetry related directions. Upon etching, the pyramidal defects converted to more stable cubic pits, consistent with (1 0 0) symmetry related walls. The square pyramidal pits tended to cluster or to form along step edges, where the weakened structure is more susceptible to surface deformations. Also, a small concentration of square pyramidal pits, oriented with the base of the pyramid along 〈0 1 1〉, was observed on the cleaved NiO surfaces. For comparison purposes, chemical mechanical polished (CMP) NiO(1 0 0) substrates were imaged with AFM. Defect concentrations were of comparable levels to the cleaved surface, but showed a different distribution of defect types. Long-ranged stepped defects were much less common on CMP substrates, and the predominant defects observed were cubic pits with sidewalls steeper than could be accurately measured by the AFM tip. These defects were similar in size and structure to those observed on cleaved NiO(1 0 0) surfaces that had been acid etched, although pit clustering was more pronounced for the CMP surfaces.     

“Rotating” steps in Si(0 0 1) homoepitaxy

Steps on Si(0 0 1) surfaces which are initially not aligned along the high symmetry directions of the dimer reconstruction are observed, by scanning tunneling microscopy, to “rotate” toward [1 1 0] directions during Si growth. This step “rotation” occurs due to a faceting of the step edges. A theoretical analysis of adatom incorporation into the steps shows that this kinetic instability may be caused by a suppressed mobility of the growing species along the S_A step edge.     

Nanowedge island formation on Mo(1 1 0)

The deposition of ultrathin Fe films on the Mo(1 1 0) surface at elevated temperatures results in the formation of distinctive nanowedge islands. The model of island formation presented in this work is based on both experiment and DFT calculations of Fe adatom hopping barriers. Also, a number of classical molecular dynamics simulations were carried out to illustrate fragments of the model. The islands are formed during a transition from a nanostripe morphology at around 2 ML coverage through a Bales-Zangwill type instability. Islands nucleate when the meandering step fronts are sufficiently roughened to produce a substantial overlap between adjacent steps. The islands propagate along the substrate [0 0 1] direction due to anisotropic diffusion/capture processes along the island edges. It was found that the substrate steps limit adatom diffusion and provide heterogeneous nucleation sites, resulting in a higher density of islands on a vicinal surface. As the islands can be several layers thick at their thinnest end, we propose that adatoms entering the islands undertake a so-called “vertical climb” along the sides of the island. This is facilitated by the presence of mismatch-induced dislocations that thread to the sides of the islands and produce local maxima of compressive strain. Dislocation lines also trigger initial nucleation on the surface with 2-3 ML Fe coverage. The sides of the nanowedge islands typically form along low-index crystallographic directions but can also form along dislocation lines or the substrate miscut direction.     

Self-regulated Ni cluster formation on the TiO2(1 1 0) terrace studied using scanning tunneling microscopy

We have studied the growth mode and morphology of Ni clusters on a TiO₂(1 1 0) surface with a wide terrace using scanning tunneling microscopy (STM) at a low coverage (less than 3 atoms nm⁻²). The Ni clusters are formed on the terrace at the low coverage of 0.2 atoms nm⁻². Their average dimensions are constant in three directions up to 1 atoms nm⁻². The Ni clusters have an oval shape with average sizes of 1.8 nm (along [0 0 1]) × 1.4 nm (along (in the [1 1 0] directions). Above the coverage of 1.0 atoms nm⁻², an increase in the cluster height occurs, retaining an almost constant lateral size. It is proposed that the interaction of the Ni cluster and the support surface regulates the Ni cluster size.     

Fourfold in-plane magnetic anisotropy in epitaxial Fe(1 1 0)/Cu(0 0 1) and Fe(1 1 0)/Ni(0 0 1) bilayers

Epitaxial Fe(1 1 0) films with thicknesses of 100-800 nm on Cu(0 0 1) and Ni(0 0 1) buffer layers grown on MgO(0 0 1) substrates have been fabricated. These films contain Fe(1 1 0) crystallites which are in the Pitsch orientation relationship. Magnetization and the fourfold in-plane magnetic anisotropy constants of these films have been determined by torque measurements. All the samples under study are characterized by a fourfold magnetic anisotropy with easy axes parallel to the [1 0 0] and [0 1 0] directions of Cu(0 0 1) and Ni(0 0 1) layers. The measured values of the constant for Fe(1 1 0)/Cu(0 0 1) are found to depend on deposition temperature; a maximum value of (2.5±0.1)×10⁵ erg/cm³ is reached after annealing at 600 °С. The in-plane torque measurements on Fe(1 1 0)/Ni(0 0 1) bilayers obtained at 300 °С, on the other hand, exhibit a constant value of (2.7±0.1)×10⁵ erg/cm³. Assuming an exchange interaction between the Fe(1 1 0) crystallites, which are in the Pitsch orientation relationship, the fourfold in-plane magnetic anisotropy has been calculated as 2.8×10⁵ erg/cm³. The deviations of the experimental values from the predicted one may be explained by the formation of a polycrystalline phase within the Fe(1 1 0) layer and a partial disorientation of the epitaxial crystallites.     

STM study of the Mo(1 1 2) and Mo(1 1 1) surfaces

The Mo(1 1 2) and Mo(1 1 1) surfaces have been studied by STM and DFT/GGA modeling. Due to high quality and cleanness of the surfaces, for the first time good STM images of large fragments of the Mo(1 1 2) and Mo(1 1 1) have been obtained. Lack of atomic resolution in the rows of the Mo(1 1 2) surface is attributed to flatness of distribution of density of the electronic states along the rows. This suggestion is illustrated by comparison of STM images for Mo(1 1 1) and Mo(1 1 2) and model calculations of STM pictures for these surfaces.     

First principles studies of Fe/Co superlattices and multilayers with bcc (0 0 1) and (1 1 0) orientations

The layer resolved magnetic moments and magnetic anisotropy energy of Fe/Co superlattices and multilayers with bcc (0 0 1) and (1 1 0) orientations obtained from first principles simulations are reported here. The magnetic moment of Fe atoms are found to depend on the geometry, coordination number and proximity to Co atoms, whereas that of Co remains almost constant in the superlattices and multilayers. Mixing of atoms at the interface resulted in enhanced Fe magnetic moment while that of Co is unaffected. The magnetic anisotropy energy in superlattices and multilayers are found to be larger than the corresponding values of bulk counterparts. Calculated easy axis of magnetization is in the plane for all superlattice compositions considered in the study, while that in multilayers, changes with crystalline orientation and thickness of Co layers.     

Density functional study of ethylamine and allylamine on Si(1 0 0)-2 × 1 and Ge(1 0 0)-2 × 1 surfaces

We have investigated the interactions of ethylamine and allylamine with models of the Si(1 0 0)-2 × 1 and Ge(1 0 0)-2 × 1 semiconductor surfaces. Ab initio molecular orbital calculations, along with density functional theory (DFT), are used to examine the interaction of these amines with cluster models of the semiconductor surfaces. The transition states and final adsorption products for adsorption of the molecules are predicted. The DFT calculations show the amines form N-dative bond states with Si(1 0 0)-2 × 1 or Ge(1 0 0)-2 × 1 as the initial adsorption product. The initial dative-bond products can be further activated, resulting in N-H bond cleavage on both surfaces. The overall reaction of a given amine on Si(1 0 0) via N-H dissociation is more exothermic than on the Ge(1 0 0) surface.     

Growth of Ni-Al alloys on Ni(1 1 1): (I) Formation of epitaxial Ni3Al from ultra-thin Al deposits

In this paper we describe the alloying process of ultra-thin Al layers (below 8 × 10¹⁵ Al/cm²) deposited on Ni(1 1 1). For this purpose Auger electron spectroscopy, low energy electron diffraction, and ion beam analysis-channelling measurements have been performed in situ in an ultra-high vacuum chamber. Al deposits formed at low temperature (about 130 K) are strained defective crystalline layers retaining the substrate orientation. Alloying takes place, with very progressive Ni enrichment, in a very broad temperature range between 250 K and 570 K. This feature shows that diffusion of the alloy species is more and more difficult when the Ni concentration increases. At 570 K a crystallographically and chemically ordered Ni₃Al phase is formed, and its order continuously improves upon annealing, up to 750 K. We have shown by ion beam methods that this alloy is three-dimensional, extending up to 16 (1 1 1) planes for the thickest deposits. The Ni₃Al phase can also be obtained directly by Al deposition at 750 K, but its crystalline quality is lower and the layer is probably formed of grains elongated along 〈1 1 −2〉 directions. The Al content of the thin Ni₃Al layers formed mostly dissolves in the bulk above 800 K. However a small amount of Al remains segregated at the Ni crystal surface.     

Study of Si(0 0 1)4 × 2-Ga structure by scanning tunneling microscopy and ab initio calculation

We have studied Si(0 0 1)-Ga surface structures formed at Ga coverages of slightly above 0.50 monolayer (ML) at 250 °C by scanning tunneling microscopy (STM). 4 × 2-, 5 × 2-, and 6 × 2-Ga structures were observed in a local area on the surface. The 4 × 2-Ga structure consists of three protrusions, as observed in filled- and empty-state STM images. The characters of these structures are clearly different from those of other Si(0 0 1)-Ga structures. We also performed an ab initio calculation of the energetics for several possible models for the 4 × 2-Ga structure, and clarified that the three-orthogonal-Ga-dimer model is the most stable. Also, the results of comparing the simulated STM images and observation images at various bias voltages indicate that this structural model is the most favorable.     

Reconstruction and de-reconstruction of the Ir(1 0 0) surface and ultrathin Fe/Ir(1 0 0) films

The structure, energetics and magnetic properties of the quasihexagonal reconstruction of the Ir(1 0 0) surface and nanostructures formed by Fe atoms on this surface have been investigated using first-principles density functional theory with generalized gradient corrections. We find the reconstructed (1 × 5) surface to be 0.10 eV/(1 × 1) area lower in energy than the unreconstructed surface and we demonstrate that first-principles calculations can achieve quantitative agreement with experiment even for such long-period and deep-going reconstructions. For Fe coverage of 0.4 monolayers (ML) we have studied the stripe-like structure with biatomic Fe rows placed in the troughs of the (1 × 5)-reconstructed surface. Results of nonmagnetic calculations agree well with the structure inferred from STM data. Higher Fe coverages lead to a de-reconstruction of the Ir substrate. At 0.8 ML coverage a surface compound with composition Fe₄Ir is formed, which shows an appreciable buckling. In this case, a ferromagnetic calculation leads to good agreement with the low-temperature LEED data. We predict that the (1 × 5) periodicity of the mixed interface layer will persist also in thicker films with a pure Fe surface. Films with 1-4 ML Fe are predicted to be tetragonally distorted and ferromagnetic, with an axial ratio corresponding well to an elastic distortion of the Fe lattice.     

Vanadium nanoclusters on Si(1 1 1) 7 × 7 surface studied by scanning tunneling microscopy

The size distribution and shape transition of self-assembled vanadium silicide clusters on Si(1 1 1) 7 × 7 have been investigated by scanning tunneling microscopy. Nanoclusters were formed by submonolayer vanadium deposition at room temperature followed by subsequent annealing (solid phase epitaxy - SPE). At room temperature, initially V-nanoclusters are formed which occupy sites avoiding the corner hole parts of the unit cells in the Si(1 1 1) 7 × 7 surface. Upon annealing, strong metal-silicon reaction occur leading to the formation of vanadium silicide nanoclusters. As a function of temperature, both, flat (2D) and three dimensional (3D) clusters have been obtained. After annealing at temperatures around 900 K many faceted clusters are created, whereas at higher annealing temperature, around 1300 K, predominantly 3D clusters are formed. The size distribution of SPE grown clusters could be well controlled in the range of 3-10 nm. The cluster size depends on the annealing temperature as well as on the initial vanadium coverage. Based on high resolution STM images a structure model for one kind of vanadium disilicide clusters exposing atomically flat surfaces was proposed.     

STM and LEED observations of a c(2 × 2) Ge overlayer on Pt(1 0 0)

We have investigated surface structures formed by deposition of 0.2 and 0.5-ML Ge on Pt(1 0 0) by using scanning tunneling microscopy (STM) and low electron energy diffraction (LEED). In addition, their temperature dependence and reactivity to CO have been studied. We observed the formation of disordered domains for Ge adatom coverages below 0.25-ML and complete c(2 × 2) structures at 0.25 to 0.5-ML Ge after annealing at 600-1200 K. Deposition of 0.2-ML Ge on a clean, hexagonally reconstructed (5 × 20)-Pt(1 0 0) substrate at 400 K lifts the reconstruction and ejects excess Pt atoms from the first layer into the adlayer. After annealing this surface to 600 K, the deposited Ge formed Ge adatoms on flat terraces and on round Pt adislands with incomplete c(2 × 2) structures, in addition to the presence of clean (1 × 1)-Pt(1 0 0) domains that were several nanometers across. Some domains of the unreconstructed (5 × 20)-Pt(1 0 0) surface still remained. After the deposition of 0.5-ML Ge and annealing at 600 K, disordered Ge domains disappeared and a c(2 × 2) Ge overlayer was produced all over the surface. Square terraces with square domains of the clean (1 × 1)-Pt(1 0 0) surface extended for nanometers. Annealing this surface to 900 K produced disordered Ge domains, and this was associated with an increase in Ge vacancies. When surfaces with 0.2-ML Ge were heated to 900 or 1200 K, or when a surface with 0.5-ML Ge was heated to 1200 K, larger domains of (5 × 20)-Pt(1 0 0) were formed with the agglomeration of disordered Ge adatoms. Pt clusters were observed in the Ge domains, and we consider these to be composed of those excess Pt atoms formed by lifting the reconstruction of the (5 × 20)-Pt(1 0 0) surface upon Ge agglomeration during cooling. A paper published elsewhere [T. Matsumoto, C. Ho, M. Batzill, B.E. Koel, Physical Review B, submitted for publication.] describes Na⁺-ion scattering spectroscopy (Na⁺-ISS) and X-ray photoelectron diffraction (XPD) experiments that distinguish between Ge present in an overlayer from incorporation into the top Pt layer to form a surface alloy for the surface structures reported here. Furthermore, these investigations revealed that disordered Ge adatoms observed herein might be associated with incomplete c(2 × 2) structures. Therefore, our observations of the formation of complete and incomplete domains of c(2 × 2) Ge adatoms indicate that interactions between Ge adatoms are repulsive at nearest neighbor distances and attractive at second-nearest neighbor distances. Regarding the reactivity of these surfaces, CO does not chemisorb on a Pt(1 0 0) surface with a c(2 × 2)-Ge overlayer and no measurable CO uptake was observed under UHV conditions at 220 K.     

Quasiclassical studies of Eley-Rideal and hot-atom reactions on a surface at 94 K: H(D) → D(H) + Cu(1 1 1)

Reactions and reaction dynamics of gas-phase H(or D) atoms with D(or H) atoms adsorbed onto a Cu(1 1 1) surface have been investigated by the quasi-classical molecular dynamics method. To simulate the H(D) → D(H) + Cu(1 1 1) system at a 94 K surface temperature, D(or H) adsorbates were disseminated arbitrarily on the surface of Cu(1 1 1) to form 0.50, 0.28 and 0.18 ML of coverages. The interaction of hydrogen atoms and the surface system is worked out by an LEPS function. LEPS parameters have been determined by using the total energy values which were calculated by a density functional theory (DFT) method and the generalized gradient approximation (GGA) for the exchange-correlation energy for various configurations of one and two hydrogen atoms on the Cu(1 1 1) surface. The Cu(1 1 1) surface, imitated by an embedded-atom method which is a many-body potential parameterized by Voter-Chen, is formed as a multilayer slab. The slab atoms are permitted to move. Various processes, trapping onto the surface, inelastic reflection of the incident projectile and penetration of the adsorbate or projectile atom into the slab, are examined. The dependence of these mechanisms on isotopic replacement has also been analyzed. Considerable contributions of the hot-atom pathways for the product formations are consequently observed. The rate of subsurface penetrations is obtained to be larger than the sticking rate onto the surface.     

Addimer chain structures: Metastable precursors to island formation on Ge-Si(0 0 1)-(2 × n) alloyed surface

We have identified addimer chain structures as metastable precursors to compact epitaxial islands on the (2 × n) reconstructed SiGe wetting layer, using polarity-switching scanning tunneling microscopy (STM). These chain structures are comprised of 2-12 addimers residing in the troughs of neighboring substrate dimer rows. The chain structures extend along equivalent 〈1 3 0〉 directions across the substrate dimer rows in a zigzag fashion, giving rise to kinked and straight segments. We measure a kink-to-straight ratio of nearly 2:1. This ratio corresponds to a free energy difference of 17 ± 4 meV, favoring the formation of kinked segments. The chain structures convert to compact epitaxial islands at elevated temperatures (?90 °C). This conversion suggests that the chain structures are a precursor for compact island formation on the SiGe wetting layer. We digitally process filled- and empty-state STM images to distinguish chain structures from compact islands. By monitoring the populations of both species over time, the chain-to-island conversion rates are measured at substrate temperatures ranging from 90 to 150 °C. The activation energy for the conversion process is measured to be 0.7 ± 0.2 eV with a corresponding pre-exponential factor of 5 × 10^4±2 s⁻¹.