Dual-mode dielectric resonator frequency/phase discriminator fornarrowband microwave receivers

An original dielectric resonator dual-mode discriminator is described for narrowband low-cost microwave receiver applications. An example is presented where the discriminator is used for automatic frequency control in a Ku-band satellite beacon receiver     

10GHz介质振荡器的设计

介绍了介质振荡器的理论和设计方法,选择并联反馈式结构,设计了一个工作频点为10 GHz的介质振荡器。为了提高振荡器的输出功率,同时改善相位噪声,本文对传统电路结构进行改进,采用了二级放大的方式,提高了有源网络的增益,降低了介质谐振器与微带线的耦合度,达到了预期目标。结果表明,本文的理论分析是正确的,设计方案是可行的。     

DSRC系统中微波信号源相位噪声分析

在专用短程通信系统中采用M-PSK调制通信方式,以适应多种速率要求.给出了射频信道模型和微波数字锁相本振信号源的相位噪声模型,分析了微波本振信号源相位噪声的影响,仿真给出了相位噪声功率谱密度与系统误码率之间的关系.利用该结果,有助于无线通信系统的设计.     

Stabilisation of a W-band microstrip oscillator by a dielectric resonator

The effect of temperature on the performance of a dielectric resonator compensated W-band impatt diode microstrip oscillator is shown to be quite small. The frequency change was about 2 MHz/°C as compared to the uncompensated oscillator's 10 MHz/°C. The design of the oscillator is presented and the resonator used was a cuboid of temperature compensated barium nonatitanate.     

Computation of period sensitivity functions for the simulation of phase noise in oscillators

Accurate phase noise simulation of circuits for radio frequency applications is of great importance during the design and development of wireless communication systems. In this paper, we present an approach based on the Floquet theory for the analysis and numerical computation of phase noise that solves some drawbacks implicitly present in previously proposed algorithms. In particular, we present an approach that computes the perturbation projection vector directly from the Jacobian matrix of the shooting method adopted to compute the steady-state solution. Further, we address some problems that arise when dealing with circuits whose modeling equations do not satisfy the Lipschitz condition at least from the numerical point of view. Frequency-domain aspects of phase noise analysis are also considered and, finally, simulation results for some benchmark circuits are presented.     

Electronic tuning of a dielectric resonator at microwave frequencies

This aper deals with electronic tuning of a 950MHz shielded dielectric resonator by using a varactor-loop circuit. A theoretical investigation based on an accurate model circuit is resented. henomena such as jumps in frequency and amplitude, and degradation of the DR qualities are described     

A phase noise reduction technique in microwave oscillator using high-Q active filter

The authors present a 10 GHz oscillator that uses a high-Q active filter to reduce the phase noise. The loaded Q of active filter is obtained at about 500. This oscillator is compared with another oscillator which uses a passive filter. The difference of two oscillators' Q is estimated at 12.5 times the open-loop gain simulation. The measured result of phase noise at 100 kHz offset shows maximum 10 dB reduction with high-Q active filter.     

BER sensitivity of OFDM systems to carrier frequency offset andWiener phase noise

In this contribution the transmission of M-PSK and M-QAM modulated orthogonal frequency division multiplexed (OFDM) signals over an additive white Gaussian noise (AWGN) channel is considered. The degradation of the bit error rate (BER), caused by the presence of carrier frequency offset and carrier phase noise is analytically evaluated. It is shown that for a given BER degradation, the values of the frequency offset and the linewidth of the carrier generator that are allowed for OFDM are orders of magnitude smaller than for single carrier systems carrying the same bit rate     

Analysis of noise up-conversion in microwave field-effecttransistor oscillators

The conversion process of the low frequency noise into phase noise in field-effect transistors (FET) oscillators is investigated. First, an evaluation of the baseband noise contribution to the oscillator phase noise is provided from the analysis of the baseband noise and the frequency noise spectra. A distinction is made within the different components of the low frequency noise contributions to close-in carrier phase noise. Next, the frequency noise of the oscillator circuit is analyzed in terms of the FET's low frequency noise multiplied by the oscillator's pushing factor. Though this product usually provides a good evaluation of the phase noise, experimental results presented here show the inaccuracy of this method at particular gate bias voltages where the pushing factor decreases to zero. To account for these observations, a new nonlinear FET model involving at least two noise sources distributed along the channel is proposed     

Design of a negative conductance dielectric resonator oscillator for X-band applications

An X-band tunable microwave low-phase noise planar oscillator employing a novel-fed dielectric resonator (DR) with a single transistor has been investigated and realized. A ZrSnTi oxide composite ceramic-based DR with dielectric permittivity of 95 enclosed in a metallic cavity with an unloaded Q factor of 5,000 at 10 GHz is proposed. The resonant frequency affinity with respect to geometric parameters is established by using the compensation technique based on dual negative conductance feedback, the outputs of which are combined via a Wilkinson power divider (WPD). The feedback parallel-coupled DR oscillator is incorporated into a laminate microwave board using the photolithographic technique. The oscillator includes a pseudomorphic low noise amplifier based on a high-electron-mobility transistor. Hence, the proposed oscillator with mechanic tuning is measured, and the results show that DR resonates at TE _01δ mode with frequency of 10 GHz. The measured phase noise of the oscillator is –81.03 dBc/Hz at a 100 kHz offset.     

基于晶振倍频鉴相的C波段低相噪频率源设计

针对数字锁相技术相位噪声的构成和特性进行了探讨与研究,并在对比传统单环锁相方案的基础上,介绍了一种基于晶振倍频信号作为参考进行鉴相的低相噪频率合成器。经测试,传统锁相方案在输出6 480 MHz时,相位噪声为?109.1d B/Hz@10 k Hz。而本文设计的低相噪频率源在使用同样的参考晶振、锁相环芯片以及压控振荡器的情况下,输出相同频率时,相位噪声相比传统方案改善了约8 d B。     

Characterisations of absolute phase noise in fibre-laser modelocked by sapphire-loaded cavity resonator oscillator at 10 GHz

Results from characterisations of the absolute phase noise in a fibre laser modelocked, at 10.24 GHz, by a sapphire-loaded cavity resonator oscillator, are reported. From the phase noise measured, an absolute timing jitter of /spl sim/2.48 and /spl sim/14.3 fs, respectively, for frequency-offset (/spl Delta/f) ranges that spanned /spl Delta/f=100 Hz to 1 MHz, and /spl Delta/f=100 Hz to 40 MHz, were estimated.     

The active device characterization and modelling problem in low phase noise microwave oscillator design

The conversion of low frequency noise into phase noise in a high frequency oscillator depends strongly on the active device type and operating conditions. Experimental set-ups are presented to achieve the choice of a transistor to be used in low noise oscillators and to study the correlation between phase noise and low frequency noise. Modelling guidelines are then described to help in the understanding of the noise conversion process. Simple rules of noise reduction are derived from simplified small signal models but the emphasis is put on more complete modelling approaches. These accurate models are affected by yet unsolved (or partially unsolved) problems such as : the influence of the large signal behaviour on the noise sources or the physically unacceptable cancellation of the phase noise in special biasing conditions.     

Research of low-frequency model of a low noise microwave frequency (phase) detector

The analysis of a low frequency model of an original microwave frequency (phase) detector with amplitude modulator, shift generator and subtracting unit is performed and the results of experimental research are presented. This research leads to a conclusion on the possibility of suppressing the most intensive phase noise at the output of the considered frequency (phase) detector.     

An alternative method for transistor low frequency noise estimation by measuring phase noise of test oscillator

In this paper we suggest an alternative method for the analysis of low frequency noise of transistors based on measurements of phase noise of a test oscillator. This method is demonstrated by experimental results obtained with a simple test oscillator with HEMT, and central frequency of 13.769 GHz. The main contribution to phase noise of the test oscillator comes from up conversion of transistor LF noise. This idea and the method can be used for the selection of transistors for high frequency application or for design of test circuit in RF IC manufacture.     

1/f phase noise in a transistor and its application to reduce the frequency fluctuation in an oscillator

The 1/f noise generating mechanism is discussed with the diffusion coefficient fluctuation in the base. Results of noise measurements of the phase and amplitude or average current noises and their correlation coefficient in collector current are presented. A possible noise reduction method is suggested, using the correlation between the phase and amplitude fluctuations simultaneously. Also, measurement of the frequency and average current fluctuations along with their correlation coefficient for transistor oscillators is presented. In this case, it is found that both fluctuations correlate with each other at low frequency. A frequency stabilization technique is discussed and a new method to reduce the frequency fluctuation is proposed for an oscillator using the correlation.     

A study of phase noise in CMOS oscillators

This paper presents a study of phase noise in two inductorless CMOS oscillators. First-order analysis of a linear oscillatory system leads to a noise shaping function and a new definition of Q. A linear model of CMOS ring oscillators is used to calculate their phase noise, and three phase noise phenomena, namely, additive noise, high-frequency multiplicative noise, and low-frequency multiplicative noise, are identified and formulated. Based on the same concepts, a CMOS relaxation oscillator is also analyzed. Issues and techniques related to simulation of noise in the time domain are described, and two prototypes fabricated in a 0.5-μm CMOS technology are used to investigate the accuracy of the theoretical predictions. Compared with the measured results, the calculated phase noise values of a 2-GHz ring oscillator and a 900-MHz relaxation oscillator at 5 MHz offset have an error of approximately 4 dB     

电子战接收机对本振相位噪声的需求研究

复杂而密集的电子信号对电子战接收机的性能提出了越来越高的要求,本振的相位噪声是电子战接收机的重要指标之一,对接收机的动态范围和数字误码率有着重要影响,针对实际工程中对相位噪声需求难以评估的问题,初步分析了相位噪声对接收机动态范围和数字误码率的影响,并通过实例进行了计算分析,可供工程技术人员参考。     

Heuristic bounds for the frequency of digital oscillators due to quantisation noise

A deterministic approach is used to evaluate bounds for the frequency of the digital oscillator considering either roundoff or magnitude-truncation quantisation. With a proper choice of the number of significant digits, any degree of approximation for a specified sinusoidal oscillation can be achieved.     

A new method developed in measuring the dielectric constants of metallic nanoparticles by a microwave double-cavity dielectric resonator

A microwave double dielectric resonator is implemented to measure the dielectric constants of nano-metallic powders. The metallic nanoparticles prepared by vacuum evaporation in inert gas are collected and mixed with alumina powder to fill the inner hole of a sapphire disc by which the resonant frequency and Q factor are measured at the TE/sub 011/ mode to derive the complex dielectric constant.