掺Sb纳米ZnO的光致发光的研究

用柠檬酸盐法合成了不同掺杂浓度的纳米ZnO,粒径约为15nm。探讨了Sb掺杂对ZnO光致发光峰的影响。随着掺杂量的提高,样品的发射峰从428nm移至444nm。未掺杂ZnO的发光主要是源于电子从锌填隙形成的缺陷能级到价带顶的跃迁;随着掺杂量的提高,体系的氧空位增加,从而使得电子从氧空位所形成的缺陷能级到价带顶的跃迁占据主导,光致发射峰向长波方向移动。     

纳米ZnO镶嵌SiO2薄膜的磁控溅射制备和发光性质的研究

采用射频磁控反应溅射方法在SiO衬底上制备了纳米ZnO镶嵌SiO2薄膜.在室温下利用吸收光谱和光致发光光谱研究了样品的光学性质.发现吸收光谱随纳米ZnO尺寸的减小发生了明显的蓝移,表明随着ZnO尺寸的减小,量子尺寸效应增强,导致带隙展宽,吸收峰蓝移.光致发光光谱在387和441 nm附近出现了两个发光带,分析认为紫外发光来源于自由激子的辐射复合,而蓝色发光带来自于氧空位的电子到价带的跃迁,并用时间分辨光谱和发光衰减证实了上述观点.     

射频磁控溅射法制备ZnO薄膜的发光特性

利用射频磁控溅射法在硅衬底上制备出具有（002）择优取向的氧化锌薄膜，用波长为300nm的光激发，观察到在446nm处有一强的光致发光峰，它来自于氧空位浅施主能级上的电子到价带上的跃迁。并讨论了发光峰与氧压的关系以及退火对它的影响，且给出了解释。     

退火处理对LaAlO_3薄膜发光特性的影响

在室温下,采用射频磁控溅射法在p-Si(100)衬底上制备了铝酸镧(LaAlO3)薄膜,分别在800℃,900℃和950℃下进行退火处理。利用X射线衍射(XRD)仪、原子力显微镜(AFM)、荧光分光光度计等研究了不同温度退火处理对LaAlO3薄膜结构、表面形貌及光学性质的影响。研究结果表明,LaAlO3薄膜样品在900℃开始由非晶向晶体转变,说明高温退火有利于提高结晶质量。光致发光(PL)谱测量发现样品在368,470nm位置处分别出现发光峰,各峰的强度随退火温度的升高逐渐增强,但峰位基本保持不变。根据吸收光谱和缺陷能级图,推测出368nm紫外光峰来源于电子从氧空位形成的缺陷能级到价带顶能级的跃迁,470nm附近的蓝光峰归因于电子从负价AlLa错位缺陷能级到价带顶能级的跃迁。     

射频磁控溅射法制备ZnO薄膜的绿光发射

用射频磁控溅射法,在硅衬底上制备出具有良好的(002)择优取向的多晶ZnO薄膜。研究了室温下薄膜的光致发光特性,观察到显著的单绿光发射(波长为514nm)峰。在氧气中830℃高温退火后,薄膜结晶质量明显提高,绿光发射峰强度变弱;在真空中830℃高温退火后,绿光发射峰强度增加。绿光发射源于氧空位深施主能级到价带顶的电子跃近。     

超声处理对ZnO薄膜光致发光特性的影响

对于结晶状态好的ZnO薄膜，测量了其光致发光(PL)光谱，发射光谱中只发现了峰值波长约389 nm的近紫外光.样品进行超声处理后，发射谱中不仅观察到近紫外峰，又观察到波长约508 nm的绿光峰.绿光峰的强度比近紫外光的强度强得多，且近紫外峰红移.进一步的热处理使绿光峰大大增强.超声处理改变了ZnO薄膜的质量和结晶状态，使晶格中产生氧空位.处理过程中的热效应使得薄膜晶格振动加剧.当晶格振动加剧到一定程度，晶格中的氧脱离格点形成氧空位.510 nm左右的绿色发光峰是ZnO晶体中的氧空位产生的.薄膜的温度越高， 关键词： ZnO薄膜 超声 光致发光     

蓝光ZnO薄膜的特性研究

采用反应溅射法在n型硅（100）衬底上制备了ZnO薄膜,分别用X射线衍射仪、原子力显微镜和荧光分光光度计对样品的结构、表面形貌和光致发光特性进行了表征。X射线衍射结果表明,实验中制备出了应变小的c轴择优取向的ZnO薄膜;原子力显微镜观察表明,薄膜表面平整,颗粒大小约为50nm,为柱状结构,颗粒垂直于硅衬底表面生长;在室温光致发光（PL）谱中观察到了波长位于434nm处的较窄的强蓝光发射峰,该蓝光峰的半峰全宽约为50meV。对蓝光峰的发光机制进行了讨论,并推断出该蓝光峰来源于电子从Zn填隙缺陷能级向价带顶跃迁。     

ZnGa2O4长余辉发光特性的研究

以ZnO和Ga2O3为原料,采用高温固相法,在不同温度和原料配比下合成了ZnGa2O4。用254 nm的紫外灯照射样品后,发现存在余辉发光,有505和690 nm两个余辉峰,且余辉峰相对强度受原料配比和烧结温度等制备条件的影响。ZnO不足和温度较高时505 nm峰相对强度较高,ZnO过量和温度较低时690nm峰相对强度较高。讨论了余辉峰的来源,认为505 nm峰来源于结构中Ga^3＋替代了部分Zn^2＋后相对变形八面体中Ga^3＋的^2EA→^4A2能级间跃迁;而690 nm峰起源于晶格中出现氧空位V0^＊后变形八面体中氧空位向其周围的O^2-的V0^＊→O^2-跃迁。解释了余辉峰相对强度受制备条件影响的原因：温度较高时ZnO较多挥发导致不足,而ZnO不足会使结构中出现Zn^2＋空位,从而多余的的Ga^3＋出现在这些空位上,其^2EA到^4A2能级间跃迁使505 nm发射占优;而温度较低时ZnO挥发较少,由于ZnO相对Ga2O3氧不足,可形成更多的O空位,有利于690 nm发射占优,这与余辉峰来源的讨论相符合。     

Co与Cu掺杂ZnO薄膜的制备与光致发光研究

采用溶胶-凝胶旋涂法在玻璃衬底上制备了Co, Cu单掺杂及Co,Cu共掺杂ZnO薄膜.用金相显微镜观察了Co与Cu掺杂对ZnO薄膜形貌的影响.X射线衍射（XRD）研究揭示所有ZnO薄膜样品都存在（002）择优取向,在Cu单掺的ZnO薄膜中晶粒尺寸最大.对所有样品的室温光致发光测量都观察到较强的蓝光双峰发射和较弱的绿光发射,其中长波长的蓝光峰和绿光峰都能够通过掺杂进行控制.对不同掺杂源的ZnO薄膜发光性能进行了分析,认为蓝光峰来源于电子由导带底到锌空位能级的跃迁及锌填隙到价带顶的跃迁,绿光峰是由于掺杂造成的 关键词： ZnO薄膜 溶胶-凝胶 Co Cu掺杂 光致发光     

非掺杂ZnO薄膜中紫外与绿色发光中心

用直流反应溅射方法在硅衬底上淀积了ZnO薄膜,测量它们的光致发光(PL)光谱,观察到两个发光峰,峰值能量分别为3.18(紫外峰,UV)和2.38eV(绿峰).样品用不同温度分别在氧气、氮气和空气中热处理后,测量了PL光谱中绿峰和紫外峰强度随热处理温度和气氛的变化,同时比较了用FP-LMT方法计算的ZnO中几种本征缺陷的能级位置.根据实验和能级计算的结果,推测出ZnO薄膜中的紫外峰与ZnO带边激子跃迁有关,而绿色发光主要来源于导带底到氧错位缺陷(O_Zn)能级的跃迁,而不是通常认为的氧空 关键词： ZnO薄膜 热处理 光致发光光谱 缺陷能级     

Thermoluminescence and electron spin resonance after room-temperature X-ray irradiation of NaCl:Mn2+

A parallel investigation of thermoluminescence (TL) and electron spin resonance (ESR) spectra on room-temperature (RT) X-irradiated NaCl:Mn²⁺ has been performed. The TL spectra in the range 20–300°C consist of five glow peaks, numbered from I to V. Temperatures at maximum height are 41°, 68°, 118°, 152° and 216°C, respectively. Peaks I, II and IV obey first-order kinetics, whereas peaks III and V fit second-order behavior. The wavelength spectrum for all glow peaks consists of two bands centered at 595 and 400 nm. The 595 nm emission is attributed to hole capture by Mn⁺ and subsequent deexcitation of Mn²⁺. The 400 nm emission is produced as a consequence of hole-F center recombination.The correlation of TL glow peaks to various defects has been investigated. Peak II is clearly related to manganese-vacancy dipoles and peak I can be roughly associated to free cation vacancies. Peak IV appears to relate to large Mn-aggregates, whereas peak V is intrinsic and not related to impurities.On the other hand, ESR data indicate that each glow peak in the 595 nm emission is associated to the annihilation of a given Mn-center; Peak I to Mn⁰C, peak II to Mn⁰C and Mn⁺, peak III to Mn⁺ and peaks IV and V to Mn⁰-D.     

异丙醇-水配合液的荧光偏振和时间分辨特性

研究了紫外光照射下异丙醇-水配合液的偏振荧光光谱,以及不同荧光峰处光子强度随时间的衰变过程,计算了偏振度并讨论了其偏振特性,测试了不同峰位对应的荧光寿命并分析了其荧光发射特性.结果表明,异丙醇-水配合液在紫外光激励下发射的荧光为具有确定分子取向的部分偏振光,偏振度和各向异性度分别为0.542和0.441.在波长为220...     

Polarization detection analysis of dual-channel surface plasmon resonance sensing for silicone oils based on the D-shaped fiber with a central hole

We present and numerically characterize a dual channel surface plasmon resonance (SPR) sensor based on a D-shaped fiber with a central hole for silicone oil detections. The proposed design incorporates two metalized channels to facilitate the simultaneous detection of one group of silicone oils, which can consist of two different species. It has been demonstrated that the p-polarized input light can induce two peaks among surface plasmon resonance places, which come from the coupling between the core-guided mode and the fundamental surface plasmon polariton (SPP) modes at the D-shaped surface and around the central hole surface. However, the s-polarized input light can only induce one peak among surface plasmon resonance places, which comes from the coupling between the core-guided mode and the fundamental SPP mode around the central hole surface. The simulation results show that the characteristic responses of two channels independently correspond to the refractive index variations in the silicone oils with which they are in contact. A maximum sensitivity of 3500 nm/RIU (refractive index unit) and 4400 nm/RIU are achieved for channel A and B, respectively. This kind of sensor structure and polarization related demodulation method is promising in the simultaneous multi-analytes sensing applications in the future.     

基于高双折射光纤布拉格光栅的自动增益控制掺铒光纤放大器

掺铒光纤非均匀展宽引起的空间烧孔现象导致单波长激光并不能完全控制放大器增益,提出了一种新颖的自动增益控制掺铒光纤放大器的结构:即采用高双折射光纤布拉格光栅产生抽运光,其写制光栅的波峰对应的波长分别为1549.3 nm和1549.83 nm,波长间隔为0.53 nm。通过调整偏振控制器,就实现了单激光或双激光的增益控制。这种设计增益控制范围为40 nm(1530~1570 nm),当输入功率在-40~-15 dBm的动态范围内,双激光增益控制的掺铒光纤放大器的平均增益和噪声系数分别约为22.22 dB和8.69 dB,而它们的漂移分别被钳制在0.69 dB和1.51 dB。系统性能测试表明:双激光控制掺饵光纤放大器在稳定性方面比单激光有着明显的优势。     

Surface plasmon polaritons assisted diffraction in metal films with subwavelength hole array

Metal films grown on Si wafer have been perforated with a periodic hole array and anomalous enhanced transmission in the subwavelength regime has been observed. High-order transmission peaks up to Si(2,2) are clearly revealed due to the large dielectric constant of Si against that of the air. Si(1,1) peak splits into two branches at oblique incidence both in TE and in TM polarization, which confirms that anomalous enhanced transmission is a surface plasmon polaritons (SPPs) assisted diffraction phenomenon.     

掺钕保偏光纤激光器的研究

对掺钕光纤激光器输出功率沿光纤的分布以及不同光纤长度下抽运功率和输出功率沿光纤的分布进行了数值模拟.以808nm半导体激光器为抽运源，掺钕双包层保偏光纤为增益介质，对保偏光纤激光器进行了探索性的实验研究.分别就光纤不同弯曲形状和弯曲半径对激光器输出功率指标和偏振特性的影响进行了研究，实验中发现在1060nm和1092nm处有两个峰值.在波长1060nm处得到了7.35W的连续偏振激光输出，斜率效率为58.3％. 关键词： 激光技术 光纤激光器 掺钕保偏光纤 偏振     

Cathodoluminescence in deformed MgO crystals

The corrected cathodoluminescence (CL) emission spectrum for undeformed MgO in the wavelength range 300–650nm consists of two overlapping bands with peaks at 425 nm (2.92 eV) and 488 nm (2.54 eV). After deformation one broad band at 466 nm (2.66 eV) of much higher intensity is observed. In the near IR part of the spectrum a further broad band occurs, consisting of a number of unresolved peaks the strongest of which is at 726 nm (1.71 eV). This band is unaffected by deformation and is thought to be due to iron impurities. Panchromatic and monochromatic SEM micrographs show that the enhanced 466 nm band luminescence comes from the slipped planes of the crystal. Shape analysis of the 466 nm emission band showed that it is a Gaussian form around the intensity maximum with an exponential high energy tail.     

Spin injection in the multiple quantum-well LED structure with the Fe/AlOx injector

A spin-injection/-detection device has been fabricated based on the multiple quantum well light emitting diode (LED) structure. It is found that only a broad electroluminescence (EL) peak of a full width at half maximum of 8.6 nm appears at the wavelength of 801 nm in EL spectra with a circular luminescence polarization degree of 18%, despite PL spectra always show three well resolved peaks. The kinetic energy gained by injected electrons and holes in their drift along opposite directions broadens the EL pe...     

基于金线填充的双芯光子晶体光纤偏振分束器

提出了一种基于金线填充的双芯光子晶体光纤超短偏振分束器,并进行了有限元分析.金线表面激发的表面等离子激元与双芯光子晶体光纤纤芯模之间的强烈耦合,导致更短的偏振分束器长度和更大的工作带宽.与同类的偏振分束器相比,所提出的偏振分柬器能同时实现较短的长度和较高的消光比.数值结果表明,长度为0.263 mm的偏振分束器,在波长1.55 μm处消光比达-70 dB,-20 dB消光比带宽为124 nm.     

Luminescence in x-irradiated CaF2:Co

Photoluminescence of X-irradiated CaF₂:Co single crystals is reported. The emission spectrum shows four peaks at 505, 550, 640 and 685 nm, all of them with an excitation band at 275 nm. The same emission spectrum, plus a band at 280 nm, is found in X-ray excited luminescence measurements. Thermoluminescence of 80 K X-irradiated crystals gives a glow curve with five peaks at 100, 125, 145, 190 and 225 K. The spectral distribution of these glow peaks is similar to that of the X-ray excited luminescence. The 280 nm band is associated with electron—hole recombination. The other four bands are associated with electron transitions among excited states of Co²⁺ produced by recombination of holes and Co⁺-ions created by X-irradiation.