溶胶-凝胶法制备汽车后视镜

采用溶胶-凝胶法镀膜技术在玻璃基板上用高折射率TiO2和低折射率SiO2材料交替镀1／4波长膜层，形成高反射膜系，制备了汽车亲水性后视镜．利用F-P腔理论，计算了两面镀膜样品在可见光区的透射率，得到的结果与实验结果相吻合．     

溶胶-凝胶法制备BaTiO3/SrTiO3多层膜的介电增强效应

采用溶胶凝胶法,在PtTiSiO2Si衬底上逐层制备了BaTiO3SrTiO3多层膜.从多层膜的XRD图可看出明显的双峰,分别对应为BaTiO3和SrTiO3的特征峰,表明样品已形成了多层膜结构.与同厚度的Ba05Sr05TiO3单层膜比较,BaTiO3SrTiO3多层膜的介电系数得到了明显的增强,在频率为10kHz时,周期为66nm的BaTiO3SrTiO3多层膜相对于同厚度的Ba05Sr05TiO3薄膜的介电系数从245增强到595,而损耗依然保持较低,分别为0029和0033.研究同时表明,BaTi 关键词： 溶胶-凝胶法 多层膜 介电增强     

溶胶-凝胶法制备高折射率TiO2薄膜

采用溶胶- 凝胶法制备了TiO2纳米晶溶胶,并以旋涂法（spin-coating）镀制了高折射率光学薄膜。借助光散射技术和透射电镜研究了溶胶的微结构。采用原子力显微镜、场发射扫描电镜、紫外-可见-近红外光谱仪、椭偏仪、漫反射吸收光谱及强激光辐照实验,对膜层的结构、光学性能及抗激光损伤性能进行了系统的表征。结果显示:纳米晶薄膜的折射率达到了1.9,而传统的溶胶-凝胶薄膜折射率只有1.6;同时纳米晶薄膜的抗激光损伤阈值与传统的溶胶-凝胶薄膜相差不大,在1 064 nm处分别为16.3 J/cm2(3 ns脉冲) 和16.6 J/cm2(3 ns脉冲);纳米晶溶胶薄膜可以在保持较高抗激光损伤阈值情况下,大幅度提高薄膜折射率。     

溶胶-凝胶法制备TiO2-SiO2多层增透膜

在酸催化体系中以钛酸丁酯为前驱体制得TiO2溶胶,以正硅酸乙酯（TEOS）为前驱体制得SiO2溶胶,采用提拉法在普通载玻片上镀膜。辅助MASS膜系设计软件进行模拟计算,得到了透射率为99%的膜片。根据理论模拟结果,实验采用交叉镀膜,制备出了宽带增透TiO2-SiO2多层膜,其方法有别于以往的TiO2/SiO2复合膜法。用紫外-可见分光光度计测量了样品的透射光谱。实验发现,样品具有明显的宽带增透效果：在400-700nm波段,当光线垂直入射时,增透6%左右;45°角入射时,可增透10%。     

短波段光学减反膜的溶胶-凝胶法制备及性能分析

 随着大型激光器的发展，对短波段减反膜的要求日益提高，其中钕玻璃激光三倍频（355nm）的减反射成为新的技术要点。采用溶胶-凝胶工艺合成SiO₂溶胶，采用提拉镀膜法制备纳米多孔SiO₂薄膜，薄膜厚度为75nm，折射率控制在1.22，镀制在石英基底上的薄膜其355nm波长的反射率仅为0.2%。通过氨处理工艺和薄膜的表面修饰，薄膜的抗磨擦性能和疏水性能大大提高，薄膜经过蘸有灰尘、乙醇的棉花球擦洗20次和50次后，透射率最大值仅分别降低0.13% 和 0.39%，与水珠的接触角达到110°。     

高功率激光宽光谱减反膜的溶胶-凝胶旋转法制备工艺

采用溶胶-凝胶法用旋转镀膜工艺在K9玻璃基片上制备出了SiO2和有机硅单层减反膜以及有机硅-SiO2双层减反膜。考察了旋转速度对SiO2和有机硅单层膜的中心透射波长、膜层折射率等基本光学性质的影响,实验确定了双层膜的涂敷工艺。透射光谱测量表明,采用本文工艺条件制备的有机硅 SiO2双层膜在430～800nm范围内透射率达99％以上。     

高功率激光宽光谱减反膜的溶胶-凝胶旋转法制备工艺

 采用溶胶-凝胶法用旋转镀膜工艺在K9玻璃基片上制备出了SiO₂和有机硅单层减反膜以及有机硅-SiO₂双层减反膜。考察了旋转速度对SiO₂和有机硅单层膜的中心透射波长、膜层折射率等基本光学性质的影响，实验确定了双层膜的涂敷工艺。透射光谱测量表明，采用本文工艺条件制备的有机硅 SiO₂双层膜在430～800nm范围内透射率达99％以上。     

溶胶-凝胶法制备高折射率TiO2薄膜

 采用溶胶- 凝胶法制备了TiO₂纳米晶溶胶,并以旋涂法（spin-coating）镀制了高折射率光学薄膜。借助光散射技术和透射电镜研究了溶胶的微结构。采用原子力显微镜、场发射扫描电镜、紫外-可见-近红外光谱仪、椭偏仪、漫反射吸收光谱及强激光辐照实验,对膜层的结构、光学性能及抗激光损伤性能进行了系统的表征。结果显示:纳米晶薄膜的折射率达到了1.9,而传统的溶胶-凝胶薄膜折射率只有1.6;同时纳米晶薄膜的抗激光损伤阈值与传统的溶胶-凝胶薄膜相差不大,在1 064 nm处分别为16.3 J/cm²(3 ns脉冲) 和16.6 J/cm²(3 ns脉冲);纳米晶溶胶薄膜可以在保持较高抗激光损伤阈值情况下,大幅度提高薄膜折射率。     

溶胶-凝胶法制备ZrO2/SiO2双层减反硬膜

以锆酸丙酯[Zr(OPr)4]、正硅酸乙酯(TEOS)为原料, 用溶胶-凝胶(sol-gel)提拉法涂膜, 制备高透过的λ/ 4～λ/ 4型ZrO2/SiO2双层减反膜.该减反膜的表面均匀, 均方根(RMS)粗糙度为1.038 nm, 平均粗糙度(RA)为0.812 nm.制备的双层减反膜具有很好的减反效果, 在石英玻璃基片二面涂膜, 在激光三倍频波长351 nm处透射比达到99.41%, 比未涂膜石英玻璃基片的透射比提高了6.14%;在基频波长1053 nm处透射比达到99.63%, 比未涂膜K9光学玻璃基片的透射比提高了7.67%.膜层具有较高的激光损伤阈值, 在激光波长为1053 nm, 脉冲宽度为1 ns时, 薄膜的激光损伤阈值达到16.8 J/cm2.膜层具有良好的耐擦除性能.     

溶胶凝胶法制备抗激光损伤SiO2疏水减反射膜

通过溶胶-凝胶法,在碱性条件下水解缩聚正硅酸乙酯获得含有SiO2颗粒的溶胶;以甲基三乙氧基硅烷在酸性条件下水解缩聚获得双链聚合物溶液,作为疏水基团的引入剂。用两者的混合物在玻璃片上旋转镀膜。利用光子相干光谱法、透射电子显微镜、小角X射线散射等方法研究了溶胶微结构,利用紫外-可见光谱仪和接触角测定仪测量薄膜的透射率和疏水性。单面反射率最低降至0.01%,对水接触角最高为118°。利用Nd:YAG激光（1 064nm）测量了薄膜的激光损伤阈值,随混合溶胶中双链聚合物含量的增加损伤阈值减小,但均高于20J/cm2（1ns脉冲）。由于薄膜既保持了纳米氧化硅薄膜的多孔性,又在颗粒及孔表面以甲基修饰,水对薄膜的浸润能力大大降低,因此薄膜的时间稳定性大大增强,同时也保证了较高的损伤阈值和透射率。     

太阳能玻璃表面高强度双层减反膜制备研究

用膜系设计软件设计了λ/4-λ/2的W型的双层减反射薄膜,优化了薄膜的光学常量,并使用溶胶-凝胶技术在玻璃基底上成功镀制了该双层折射率梯度的减反射薄膜.用椭圆偏振光谱仪、紫外-可见-近红外分光光度计、原子力显微镜等分析表征了薄膜的性能.结果表明,镀制了该双层薄膜的玻璃在400 nm～800 nm波段平均透过率增加了近6%,同时薄膜显示出了极佳的机械强度.     

太阳能玻璃表面高强度双层减反膜制备研究

用膜系设计软件设计了λ/4-λ/2的W型的双层减反射薄膜,优化了薄膜的光学常量,并使用溶胶-凝胶技术在玻璃基底上成功镀制了该双层折射率梯度的减反射薄膜.用椭圆偏振光谱仪、紫外-可见-近红外分光光度计、原子力显微镜等分析表征了薄膜的性能.结果表明,镀制了该双层薄膜的玻璃在400 nm～800 nm波段平均透过率增加了近6%,同时薄膜显示出了极佳的机械强度.     

高温处理工艺对低压MOCVD外延GaAs/Ge太阳电池的影响

采用自制的低压金属有机化学汽相淀积LP-MOCVD设备,在Ge衬底(100)面向(111)偏9°外延生长出GaAs电池结构,对电池材料进行了X射线衍射分析另外,对由此材料制成的太阳电池进行了性能测试,测试结果表明,Ge衬底的高温处理工艺对GaAs/Ge太阳电池的电流电压特性有一定的影响试验表明,在600～700℃之间高温处理效果较好。     

新型溶胶-凝胶二氧化硅微孔增透膜的制备及性能研究

以正硅酸乙酯为前驱体,二甲基二乙氧基硅烷为造孔剂,采用溶胶凝胶技术在酸催化条件下制备了二氧化硅溶胶;采用提拉法在K9玻璃基片上双面镀膜,经500 ℃热处理,制备得到一种新型单层微孔二氧化硅增透膜。通过改变造孔剂加入量,膜层峰值透过率可达到99.7％,而硬度仍保持在2H以上,同时具有良好的耐摩擦性及粘附性。加速腐蚀实验表明,膜层的环境稳定性是常规膜层的10倍以上。由于该新型增透膜兼具高透过率、良好的机械性能以及很强的环境稳定性,因而在改善太阳能玻璃增透性能方面有极大的应用价值。     

Effects of 1.0-11.5 MeV Electron Irradiation on GaInP/GaAs/Ge Triple-junction Solar Cells for Space Applications

GalnP/GaAs//Ge triple-junction solar cells are irradiated with 1.0, 1.8, and 11.5 MeV electrons with fluence rang- ing up to 3 × 10^15, 3×10^15, and 3×10^14cn^-2, respectively. Their performance degradation effects are analyzed by using current-voltage characteristics, spectral response measurements, and electron irradiation-induced dis- placements. The degradation rates of the maximum power and the spectral response of the solar cells increase with the electron fluence, and also increase with the increasing electron energy. It is observed that the spectral response of the GaAs middle cell degrades more significantly than that of the GaInP top cell.     

轻质柔性GaInP/Ga(In)As/Ge三结太阳电池及其性能研究

为了研究柔性太阳能电池的性能,通过太阳能电池减薄工艺制备出轻质柔性Ga In P/Ga(In)As/Ge三结太阳能电池芯片。尺寸为40 mm×60 mm的电池芯片重量为0.7 g,仅为常规175μm厚度电池重量的30%。验证了柔性电池工艺的可行性,制得的柔性电池转换效率达到了30.64%,同常规厚度电池十分接近。对比测试了两种样品不同温度下的暗电流曲线,拟合了两种电池样品的温度系数,结果表明:电池的温度系数与衬底类型无关,只与电池PN结本身相关。     

1 MeV电子辐照下晶格匹配与晶格失配GaInP/GaInAs/Ge三结太阳电池辐射效应研究

对采用MOCVD方法制备的晶格匹配(LM)与晶格失配(UMM)GaInP/GaInAs/Ge三结太阳电池进行了1MeV电子辐射效应研究。结果表明:在电子辐照下,两种电池的I-V特性参数(开路电压Voc,短路电流Isc,最大输出功率Pmax)均发生衰降,且晶格失配电池的I-V特性参数衰降均大于晶格匹配电池。在光谱响应方面,对于顶电池,晶格匹配电池的衰降大于晶格失配电池;而中间电池则前者衰降小于后者;另外,Ge底电池的光谱响应表现特殊,辐照后光谱响应变强。     

Electrical and optical properties of Si-doped indium tin oxides as transparent electrode and anti-reflection coating for solar cells

We have studied the electrical and optical properties of Si-doped indium tin oxides (ITSOs) as transparent electrodes and anti-reflection coatings for Si-based solar cells. The ITSO thin films were obtained by co-sputtering of ITO and SiO₂ targets under target power control. The resistivity of the ITSO thin films deposited at 0.625 in terms of power ratio (ITO/SiO₂) were 391 Ωcm. In this condition, the ITSO thin films showed very high resistivity compared to sputted pure ITO thin films (1.08 × 10⁻³ Ωcm). However, refractive index of ITSO thin films deposited at the same condition at 500 nm is somewhat lowered to 1.97 compared to ITO thin films (2.06). The fabricated graded refractive index AR coatings using ITO, ITSO, and SiO₂ thin films kept over 80% of transmittance regardless of their thickness varing from 97 nm to 1196 nm because of their low extinction coefficient. As the AR coating with graded refractive indices using ITO, ITSO, and SiO₂ layers was applied to general silicon-based solar cell, the current level increased nearly twice more than that of bare silicon solar cell without AR coating.     

Radiation Damage Analysis of Individual Subcells for GaInP/GaAs/Ge Solar Cells Using Photoluminescence Measurements

The radiation damage of three individual subcells for GaInP/GaAs/Ge triple-junction solar cells irradiated with electrons and protons is investigated using photoluminescence(PL) measurements. The PL spectra of each subcell are obtained using different excitation lasers. The PL intensity has a fast degradation after irradiation,and decreases as the displacement damage dose increases. Furthermore, the normalized PL intensity varying with the displacement damage dose is analyzed in detail, and then the lifetime damage coefficients of the recombination centers for GaInP top-cell, GaAs mid-cell and Ge bottom-cell of the triple-junction solar cells are determined from the PL radiative efficiency.     

Photoluminescence Analysis of Electron Damage for Minority Carrier Diffusion Length in GaInP/GaAs/Ge Triple-Junction Solar Cells

Photoluminescence(PL) measurements are carried out to investigate the degradation of GaInP top cell and GaAs middle cell for GaInP/GaAs/Ge triple-junction solar cells irradiated with 1.0, 1.8 and 11.5 MeV electrons with fluences ranging up to 3 × 10~(15), 1 × 10~(15) and 3 × 10~(14) cm-2, respectively. The degradation rates of PL intensity increase with the electron fluence and energy. Furthermore, the damage coefficient of minority carrier diffusion length is estimated by the PL radiative efficiency. The damage coefficient increases with the electron energy. The relation of damage coefficient to electron energy is discussed with the non-ionizing energy loss(NIEL), which shows a quadratic dependence between damage coefficient and NIEL.