Low-lying isomers of Si(n)(+) and Si(n)(-) (n=31-50) clusters

We carry out a systematic search for the atomic structures of silicon cluster cations and anions in the size range n=31-50 using density functional theory in the generalized-gradient approximation. The obtained lowest-energy candidates feature cagelike structures. We find that the computed binding energies and the dissociation pathways as well as the mobilities of our lowest-energy isomers of the cations are all in good agreement with the measured data from experiments. Furthermore, based on these isomers, we reveal that the steplike feature appearing in the measured high-resolution mobilities can be correlated with the corresponding fullerenes explicitly, which strongly support the notion that endohedral silicon fullerenelike structures are the most favored growth pattern for silicon clusters in the range n=31-50. Our calculation and analysis suggest that the proposed isomers are probably very close to the major-abundance isomers observed in experiments.     

Structures and energetics of Be(n)Si(n) and Be(2n)Si(n) (n = 1-4) clusters

The structures and energies of Be(n)Si(n) and Be(2n)Si(n) (n = 1-4) clusters have been examined in ab initio theoretical electronic structure calculations. Cluster geometries have been established in B3LYP/6-31G(2df) calculations and accurate relative energies determined by the G3XMP2 method. The two atoms readily bond to each other and to other atoms of their own kind. The result is a great variety of low-energy clusters in a variety of structural types.     

Structure and stability of oxygen adsorption on Si(n) (n = 5-10) clusters

The structures, binding energies, and electronic properties of one oxygen atom (O) and two oxygen atoms (2O) adsorption on silicon clusters Si(n) with n ranging from 5 to 10 are studied systematically by ab initio calculations. Twelve stable structures are obtained, two of which are in agreement with those reported in previous literature and the others are new structures that have not been proposed before. Further investigations on the fragmentations of Si(n)O and Si(n)O2 (n = 5-10) clusters indicate that the pathways Si(n)O --> Si(n-1) + SiO and Si(n)O2 --> Si(n-2) + Si2O2 are most favorable from thermodynamic viewpoint. Among the studied silicon oxide clusters, Si8O, Si9O, Si5O2 and Si8O2 correspond to large adsorption energies of silicon clusters with respect to O or 2O, while Si8O, with the smallest dissociation energy, has a tendency to separate into Si7 + SiO. Using the recently developed quasi-atomic minimal-basis-orbital method, we have also calculated the unsaturated valences of the neutral Si(n) clusters. Our calculation results show that the Si atoms which have the largest unsaturated valences are more attractive to O atom. Placing O atom right around the Si atoms with the largest unsaturated valences usually leads to stable structures of the silicon oxide clusters.     

Electronic properties of Si and Ge atoms doped in clusters: In(n)Si(m) and In(n)Ge(m)

Electronic properties of silicon and germanium atom doped indium clusters, In(n)Si(m) and In(n)Ge(m), were investigated by photoionization spectroscopy of the neutrals and photoelectron spectroscopy of the anions. Size dependence of ionization energy and electron affinity for In(n)Si(1) and In(n)Ge(1) exhibit pronounced even-odd alternation at cluster sizes of n = 10-16, as compared to those for pure In(n) clusters. This result shows that symmetry lowering with the doped atom of Si or Ge results in undegeneration of electronic states in the 1d shell formed by monovalent In atoms.     

Competition between supercluster and stuffed cage structures in medium-sized Ge(n) (n=30-39) clusters

We have performed an unbiased global search for the geometries of low-lying Ge(n) clusters in the size range of 30相似文献   

Density-functional study of structural and electronic properties of Si(n)C(n) (n=1-10) clusters

Density-functional theory with generalized gradient approximation for the exchange-correlation potential has been used to calculate the structural and electronic structure of Si(n)C(n) (n=1-10) clusters. The geometries are found to undergo a structural change from two dimensional to three dimensional when the cluster size n equals 4. Cagelike structures are favored as the cluster size increases. A distinct segregation between the silicon and carbon atoms is observed for these clusters. It is found that the C atoms favor to form five-membered rings as the cluster size n increases. However, the growth motif for Si atoms is not observed. The Si(n)C(n) clusters at n=2, 6, and 9 are found to possess relatively higher stability. On the basis of the lowest-energy geometries obtained, the size dependence of cluster properties such as binding energy, HOMO-LUMO gap, Mulliken charge, vibrational spectrum, and ionization potential has been computed and analyzed. The bonding characteristics of the clusters are discussed.     

Fluxional and aromatic behavior in small magic silicon clusters: a full ab initio study of Si(n), Si(n) (1-), Si(n) (2-), and Si(n) (1+), n=6, 10 clusters

The structural, electronic, vibrational, optical, magnetic, and aromatic characteristics of Si(n), Si(n) (1-), Si(n) (2-), and Si(n) (1+), clusters have been calculated very accurately with a variety of high level ab initio techniques. These calculations have been performed with the aim to clarify existing ambiguities in the literature and to bring up the fluxional and aromatic characteristics of these species. The fluxional behavior, according to earlier conjecture of the present author, could be connected to the magic property. In addition such behavior could also explain the existence of conflicting results. The ab initio techniques include quadratic configuration interaction, coupled cluster, and multireference second order perturbation theory, together with density functional theory ("static" and time dependent) with the hybrid B3LYP functional. Various high quality correlation-consistent basis sets, ranging from 2Z up to 5Z quality, were employed. It is demonstrated that Si(6) is fluxional, fluctuating around a symmetric D(4h) structure. Si(10) is also fluxional but to a lesser degree, in contrast to Si(10) (1-) anion which is highly fluxional. For both clusters, in full agreement with Wade's and Lipscomb's rules for deltahedral boranes, the corresponding dianions have higher symmetry (O(h) and D(4d), respectively) and lower energy than the neutral clusters. The aromatic behavior of Si(6) fits better to a mixed conflicting aromaticity picture. This type of aromatic and fluxional behavior has also been observed in stable "magic" carbon clusters as C(6) and carbon fullerenes such as C(20). The present results, which support possible connection of fluxional and magic properties, are in excellent agreement with experimental measurements of ionization energies, electron affinities, and vibrationally resolved photoelectron spectra.     

Theoretical study of the adsorption of H on Si n clusters, (n=3-10)

A recently proposed local Fukui function is used to predict the binding site of atomic hydrogen on silicon clusters. To validate the predictions, an extensive search for the more stable SinH (n=3-10) clusters has been done using a modified genetic algorithm. In all cases, the isomer predicted by the Fukui function is found by the search, but it is not always the most stable one. It is discussed that in the cases where the geometrical structure of the bare silicon cluster suffers a considerable change due to the addition of one hydrogen atom, the situation is more complicated and the relaxation effects should be considered.     

Theoretical study of mixed silicon-lithium clusters Si(n)Li(p)(+) (n=1-6, p=1-2)

Theoretical study on the structures of neutral and singly charged Si(n)Li(p)((+)) (n=1-6, p=1-2) clusters have been carried out in the framework of the density functional theory (DFT) with the B3LYP functional. The structures of the neutral Si(n)Li(p) and cationic Si(n)Li(p)(+) clusters are found to keep the frame of the corresponding Si(n), Li species being adsorbed at the surface. The localization of the lithium cation is not the same one as that of the neutral atom. The Li(+) ion is preferentially located on a Si atom, while the Li atom is preferentially attached at a bridge site. A clear parallelism between the structures of Si(n)Na(p) and those of Si(n)Li(p) appears. The population analysis show that the electronic structure of Si(n)Li(p) can be described as Si(n)(p)(-)+pLi(+) for the small sizes considered. Vertical and adiabatic ionization potentials, adsorption energies, as well as electric dipole moments and static dipolar polarizabilities, are calculated for each considered isomer of neutral species.     

Geometries and stabilities of Ag-doped Si n (n=1-13) clusters: a first-principles study

The structures of AgSi(n) (n=1-13) clusters are investigated using first-principles calculations. Our studies suggest that AgSi(n) clusters with n=7 and 10 are relatively stable isomers and that these clusters prefer to be exohedral rather than endohedral. Moreover, doping leaves the inner core structure of the clusters largely intact. Additionally, the plot of fragmentation energies as a function of silicon atoms shows that the AgSi(n) are favored to dissociate into one Ag atom and Si(n) clusters. Alternative pathways exist for n>7 (except n=11) in which the Ag-Si cluster dissociates into a stable Si(7) and a smaller fragment AgSi(n-7). The AgSi(11) cluster dissociates into a stable Si(10) and a small fragment AgSi. Lastly, our analysis indicates that doping of Ag atom significantly decreases the gaps between the highest occupied molecular orbital and the lowest unoccupied molecular orbital for n>7.     

Optical properties of (GaAs)n clusters (n = 2-16)

The electronic and geometrical structures of the lowest triplet states of (GaAs) n clusters ( n = 2-16) are studied using density functional theory with generalized gradient approximation (DFT-GGA). It is found that the triplet-state geometries are different from the corresponding singlet-state geometries; for n = 2-8, 10, and 11, the triplets and singlets have different topologies, while the (GaAs) 9, (GaAs) 12, (GaAs) 15, and (GaAs) 16 triplets possess a reduced symmetry, due to Jahn-Teller distortions. Except for GaAs, the singlet states are the ground states. Excitation energies and oscillator strengths are computed for excitations from the ground state to ten singlet states of all (GaAs) n clusters using time-dependent density functional theory. The adiabatic singlet-triplet gap is compared to the vertical gap, and the difference in the eigenvalues of the highest-occupied and lowest-unoccupied molecular orbitals (the HOMO-LUMO gap). While these three values show large oscillations for small n, they approach each other as the cluster size grows. Thus, the HOMO-LUMO gap computed using the DFT-GGA approach presents a rather reliable estimate of the adiabatic singlet-triplet gap.     

Structure and vibrations of Ga(n)N(n) (n = 3-10) clusters

The structure and harmonic vibrations of Ga(n)N(n) (n = 3-10) clusters have been investigated using the B3LYP (Becke 3-parameter-Lee-Yang-Parr) density functional theory. All structures are found to be cumulenic D(nh) rings (equal bonds, alternating angles), with one intense out of plane mode and three infrared-active degenerate modes, of which the highest one is extremely intense and asymptotically increases to 1029 cm(-1) for n = 10. Comparisons with C2n, B(n)N(n), and Al(n)N(n) clusters, the structure and bonding type for the Ga(n)N(n) (n=3-10) clusters are consistent with those of the C2n (n = 3, 5, 7, ...) clusters, the B(n)N(n) (n = 3-10), and Al(n)N(n) (n = 3-9) clusters.     

Electronic structures and thermochemical properties of the small silicon-doped boron clusters B(n)Si (n=1-7) and their anions

We perform a systematic investigation on small silicon-doped boron clusters B(n)Si (n=1-7) in both neutral and anionic states using density functional (DFT) and coupled-cluster (CCSD(T)) theories. The global minima of these B(n)Si(0/-) clusters are characterized together with their growth mechanisms. The planar structures are dominant for small B(n)Si clusters with n≤5. The B(6)Si molecule represents a geometrical transition with a quasi-planar geometry, and the first 3D global minimum is found for the B(7)Si cluster. The small neutral B(n)Si clusters can be formed by substituting the single boron atom of B(n+1) by silicon. The Si atom prefers the external position of the skeleton and tends to form bonds with its two neighboring B atoms. The larger B(7)Si cluster is constructed by doping Si-atoms on the symmetry axis of the B(n) host, which leads to the bonding of the silicon to the ring boron atoms through a number of hyper-coordination. Calculations of the thermochemical properties of B(n)Si(0/-) clusters, such as binding energies (BE), heats of formation at 0 K (ΔH(f)(0)) and 298 K (ΔH(f)([298])), adiabatic (ADE) and vertical (VDE) detachment energies, and dissociation energies (D(e)), are performed using the high accuracy G4 and complete basis-set extrapolation (CCSD(T)/CBS) approaches. The differences of heats of formation (at 0 K) between the G4 and CBS approaches for the B(n)Si clusters vary in the range of 0.0-4.6 kcal mol(-1). The largest difference between two approaches for ADE values is 0.15 eV. Our theoretical predictions also indicate that the species B(2)Si, B(4)Si, B(3)Si(-) and B(7)Si(-) are systems with enhanced stability, exhibiting each a double (σ and π) aromaticity. B(5)Si(-) and B(6)Si are doubly antiaromatic (σ and π) with lower stability.     

Theoretical study of Al(n) and Al(n)O (n = 2-10) clusters

The stable structures, energies, and electronic properties of neutral, cationic, and anionic clusters of Al(n) (n = 2-10) are studied systematically at the B3LYP/6-311G(2d) level. We find that our optimized structures of Al5(+), Al9(+), Al9(-), Al10, Al10(+), and Al10(-) clusters are more stable than the corresponding ones proposed in previous literature reports. For the studied neutral aluminum clusters, our results show that the stability has an odd/even alternation phenomenon. We also find that the Al3, Al7, Al7(+), and Al7(-) structures are more stable than their neighbors according to their binding energies. For Al7(+) with a special stability, the nucleus-independent chemical shifts and resonance energies are calculated to evaluate its aromaticity. In addition, we present results on hardness, ionization potential, and electron detachment energy. On the basis of the stable structures of the neutral Al(n) (n = 2-10) clusters, the Al(n)O (n = 2-10) clusters are further investigated at the B3LYP/6-311G(2d), and the lowest-energy structures are searched. The structures show that oxygen tends to either be absorbed at the surface of the aluminum clusters or be inserted between Al atoms to form an Al(n-1)OAl motif, of which the Al(n-1) part retains the stable structure of pure aluminum clusters.     

Theoretical study of the geometries and dissociation energies of molecular water on neutral aluminum clusters Al(n) (n = 2-25)

Geometries and dissociation energies of water molecules on Al(n) (n = 2-25) clusters were investigated using density functional theory with all electron relativistic spin-polarized calculations under the generalized gradient approximation. An extensive structure search was performed to identify the low-energy conformations of Al(n)H(2)O complexes for each size. Optimal adsorption sites were assigned for low-energy isomers of the clusters. Size and site specific dependences were studied for the Al(n)H(2)O complexes in stabilities, geometries, adsorption energies, dissociation energies, Al-O bond lengths, and other characteristic quantities. The stabilities and geometries revealed that H atom in H(2)O is not inclined to bond with Al atoms. The most stable Al(n)H(2)O configurations for each size tend to correspond to the most stable bare Al(n) cluster except of Al(6) and Al(24) clusters. The HO bond lengths increase generally 0.01 ? with respect to the isolated H(2)O in all of the adsorption complexes. The dissociation energy of an isolated H(2)O into HO and H was 5.39 eV, which decreased about two-thirds to the energy range of 0.83-2.12 eV with the help of Al(n) clusters. In spite of the fluctuations, the dissociation energies of Al(n)H(2)O complexes rise with the size increasing as a whole. In addition, we also found that the bare Al(n) clusters with high vertical ionization potentials usually have high dissociation energies of H(2)O in the corresponding adsorption models. The energetically preferred spin-multiplicity of all the odd-n Al(n)H(2)O complexes is doublet, and it is singlet for all the even-n complexes with exception of Al(2)H(2)O which is triplet.     

Photoelectron spectroscopy and density functional calculations of CuSi(n)- (n = 4-18) clusters

We conducted a combined anion photoelectron spectroscopy and density functional theory study on the structural evolution of copper-doped silicon clusters, CuSi(n)(-) (n = 4-18). Based on the comparison between the experiments and theoretical calculations, CuSi(12)(-) is suggested to be the smallest fully endohedral cluster. The low-lying isomers of CuSi(n)(-) with n ≥ 12 are dominated by endohedral structures, those of CuSi(n)(-) with n < 12 are dominated by exohedral structures. The most stable structure of CuSi(12)(-) is a double-chair endohedral structure with the copper atom sandwiched between two chair-style Si(6) rings or, in another word, encapsulated in a distorted Si(12) hexagonal prism cage. CuSi(14)(-) has an interesting C(3h) symmetry structure, in which the Si(14) cage is composed by three four-membered rings and six five-membered rings.     

Global optimization of ionic Mg(n)F(2n) (n=1-30) clusters

The global optimization basin-hopping (BH) method has been used to locate the global minima (GM) of Mg(n)F(2n) (n=1-30) clusters using a Born-Mayer-type potential. Some of the GM were particularly difficult to find, requiring more than 1.5 x 10(4) BH steps. We have found that both the binding energy per MgF2 unit and the effective volume of the GM isomers increase almost linearly with n, and that cluster symmetry decreases with cluster size. The data derived from the BH runs reveal a growing density of local minima just above the GM as n increases. Despite this, the attraction basin around each GM is relatively large, since after all their atomic coordinates are randomly displaced by values as high as 2.0 bohrs, the perturbed structures, upon reoptimization, relax back to the GM in more than 50% of the cases (except for n=10 and 11). The relative stabilities derived from energy second differences suggest that n=8,10,13,15, and 20 are probably the magic numbers for these systems. Mass spectrum experiments would be very useful to clarify this issue.     

Silicon monohydride clusters Si(n)H (n = 4-10) and their anions: structures, thermochemistry, and electron affinities

The molecular structures, electron affinities, and dissociation energies of the Si(n)H/Si(n)H- (n = 4-10) species have been examined via five hybrid and pure density functional theory (DFT) methods. The basis set used in this work is of double-zeta plus polarization quality with additional diffuse s- and p-type functions, denoted DZP++. The geometries are fully optimized with each DFT method independently. The three different types of neutral-anion energy separations presented in this work are the adiabatic electron affinity (EA(ad)), the vertical electron affinity (EA(vert)), and the vertical detachment energy (VDE). The first Si-H dissociation energies, D(e)(Si(n)H --> Si(n) + H) for neutral Si(n)H and D(e)(Si(n)H- --> Si(n)- + H) for anionic Si(n)H- species, have also been reported. The structures of the ground states of these clusters are traditional H-Si single-bond forms. The ground-state geometries of Si5H, Si6H, Si8H, and Si9H predicted by the DFT methods are different from previous calculations, such as those obtained by Car-Parrinello molecular dynamics and nonorthogonal tight-binding molecular dynamics schemes. The most reliable EA(ad) values obtained at the B3LYP level of theory are 2.59 (Si4H), 2.84 (Si5H), 2.86 (Si6H), 3.19 (Si7H), 3.14 (Si8H), 3.36 (Si9H), and 3.56 (Si10H) eV. The first dissociation energies (Si(n)H --> Si(n) + H) predicted by all of these methods are 2.20-2.29 (Si4H), 2.30-2.83 (Si5H), 2.12-2.41 (Si6H), 1.75-2.03 (Si7H), 2.41-2.72 (Si8H), 1.86-2.11 (Si9H), and 1.92-2.27 (Si10H) eV. For the negatively charged ion clusters (Si(n)H- --> Si(n)- + H), the dissociation energies predicted are 2.56-2.69 (Si4H-), 2.80-3.01 (Si5H-), 2.86-3.06 (Si6H-), 2.80-3.03 (Si7H-), 2.69-2.92 (Si8H-), 2.92-3.18 (Si9H-), and 2.89-3.25 (Si10H-) eV.     

Parity alternation of ground-state P(n)(-) and P(n)(+) (n = 3-15) phosphorus clusters

The ground-state structures of neutral, cationic, and anionic phosphorus clusters P(n), P(n)(+), and P(n)(-) (n = 3-15) have been calculated using the B3LYP/6-311+G* density functional method. The P(n)(+) and P(n)(-) (n = 3-15) clusters with odd n were found to be more stable than those with even n, and we provide a satisfactory explanation for such trends based on concepts of energy difference, ionization potential, electron affinity, and incremental binding energy. The result of odd/even alternations is in good accord with the relative intensities of cationic and anionic phosphorus clusters observed in mass spectrometric studies.