Competition between supercluster and stuffed cage structures in medium-sized Ge(n) (n=30-39) clusters

We have performed an unbiased global search for the geometries of low-lying Ge(n) clusters in the size range of 30相似文献   

Structures and energetics of Be(n)Si(n) and Be(2n)Si(n) (n = 1-4) clusters

The structures and energies of Be(n)Si(n) and Be(2n)Si(n) (n = 1-4) clusters have been examined in ab initio theoretical electronic structure calculations. Cluster geometries have been established in B3LYP/6-31G(2df) calculations and accurate relative energies determined by the G3XMP2 method. The two atoms readily bond to each other and to other atoms of their own kind. The result is a great variety of low-energy clusters in a variety of structural types.     

Structures and relative stability of medium-sized silicon clusters. IV. Motif-based low-lying clusters Si21-Si30

Structures and relative stability of four families of low-lying silicon clusters in the size range of Sin(n=21-30) are studied, wherein two families of the clusters show prolate structures while the third one shows near-spherical structures. The prolate clusters in the first family can be assembled by connecting two small-sized magic clusters Sin (n=6, 7, 9, or 10) via a fused-puckered-hexagonal-ring Si9 unit (a fragment of bulk diamond silicon), while those in the second family can be constructed on the basis of a structural motif consisting of a puckered-hexagonal-ring Si6 unit (also a fragment of bulk diamond silicon) and a small-sized magic cluster Sin (n=6, 7, 9, or 10). For Si21-Si29, the predicted lowest-energy clusters (except Si27) exhibit prolate structures. For clusters larger than Si25, the third family of near-spherical clusters becomes energetically competitive. These near-spherical clusters all exhibit endohedral cagedlike structures, and the cages are mostly homologue to the carbon-fullerene cages which consist of pentagons and hexagons exclusively. In addition, for Si26-Si30, we construct a new (fourth) family of low-lying clusters which have "Y-shaped" three-arm structures, where each arm is a small-sized magic cluster (Si6, Si7, or Si10). Density-functional calculation with the B3LYP functional shows that this new family of clusters is also energetically competitive, compared to the two prolate and one near-spherical low-lying families.     

Ge_nEu(n=1-13)团簇的结构、电子及磁性质(英文)

利用密度泛函理论在广义梯度近似下研究了GenEu(n=1-13)团簇的生长模式和磁性.结果表明:对于GenEu(n=1-13)团簇的基态结构而言,没有Eu原子陷入笼中.这和SinEu以及其它过渡金属掺杂半导体团簇的生长模式不同.除GeEu团簇外,GenEu(n=2-13)团簇的磁矩均为7μB.团簇的总磁矩与Eu原子的4f轨道磁矩基本相等.Ge、Eu原子间的电荷转移以及Eu原子的5d、6p和6s间的轨道杂化可以增强Eu原子的局域磁矩,却不能增强团簇总磁矩.     

Evolution of the electronic properties of Snn- clusters (n=4-45) and the semiconductor-to-metal transition

The electronic structure of Sn(n) (-) clusters (n=4-45) was examined using photoelectron spectroscopy at photon energies of 6.424 eV (193 nm) and 4.661 eV (266 nm) to probe the semiconductor-to-metal transition. Well resolved photoelectron spectra were obtained for small Sn(n) (-) clusters (n< or =25), whereas more congested spectra were observed with increasing cluster size. A distinct energy gap was observed in the photoelectron spectra of Sn(n) (-) clusters with n< or =41, suggesting the semiconductor nature of small neutral tin clusters. For Sn(n) (-) clusters with n> or =42, the photoelectron spectra became continuous and no well-defined energy gap was observed, indicating the onset of metallic behavior for the large Sn(n) clusters. The photoelectron spectra thus revealed a distinct semiconductor-to-metal transition for Sn(n) clusters at n=42. The spectra of small Sn(n) (-) clusters (n< or =13) were also compared with those of the corresponding Si(n) (-) and Ge(n) (-) clusters, and similarities were found between the spectra of Sn(n) (-) and those of Ge(n) (-) in this size range, except for Sn(12) (-), which led to the discovery of stannaspherene (the icosahedral Sn(12) (2-)) previously [L. F. Cui et al., J. Am. Chem. Soc. 128, 8391 (2006)].     

Electronic properties of Si and Ge atoms doped in clusters: In(n)Si(m) and In(n)Ge(m)

Electronic properties of silicon and germanium atom doped indium clusters, In(n)Si(m) and In(n)Ge(m), were investigated by photoionization spectroscopy of the neutrals and photoelectron spectroscopy of the anions. Size dependence of ionization energy and electron affinity for In(n)Si(1) and In(n)Ge(1) exhibit pronounced even-odd alternation at cluster sizes of n = 10-16, as compared to those for pure In(n) clusters. This result shows that symmetry lowering with the doped atom of Si or Ge results in undegeneration of electronic states in the 1d shell formed by monovalent In atoms.     

No quenching of magnetic moment for the GenCo (n=1-13) clusters: first-principles calculations

The authors predict that for the Ge(n)Co (n=1-13) clusters the magnetic moment does not quench, which is dark contrast to the previous results with transition-metal-doped Si(n) clusters. It may be due to the unpaired electrons of the Co atom in the clusters. For the ground state structures of the Ge(n)Co (n>or=9) clusters, the Co atom completely falls into the center of the Ge outer frame, forming metal-encapsulated Ge(n) cages. The doping of the Co atom enhances the stability of the host Ge(n) clusters. The Ge(10)Co cluster with the bicapped tetragonal antiprism structure is more stable than others, which agrees very well with the results of the experiment of the Co/Ge binary clusters by the laser vaporization.     

Theoretical study of the structural and electronic properties of SimGen and SimGen- (s = m + n <or= 7) clusters

Ground-state structures, vibrational frequencies, HOMO-LUMO energy gap, electron affinities, and cluster mixing energy of binary semiconductor clusters SimGen in the range s = m + n 相似文献   

Oxidation pattern of small silicon oxide clusters: structures and stability of Si6On (n = 1-12)

We have performed systematic ab initio calculations to study the structures and stability of Si(6)O(n)() clusters (n = 1-12) in order to understand the oxidation process in silicon systems. Our calculation results show that oxidation pattern of the small silicon cluster, with continuous addition of O atoms, extends from one side to the entire Si cluster. Si atoms are found to be separated from the pure Si cluster one-by-one by insertion of oxygen into the Si-O bonds. From fragmentation energy analyses, it is found that the Si-rich clusters usually dissociate into a smaller pure Si clusters (Si(5), Si(4), Si(3), or Si(2)), plus oxide fragments such as SiO, Si(2)O(2), Si(3)O(3), Si(3)O(4), and Si(4)O(5). We have also studied the structures of the ionic Si(6)O(n)(+/-) (n = 1-12) clusters and found that most of ionic clusters have different lowest-energy structures in comparison with the neutral clusters. Our calculation results suggest that transformation Si(6)O(n)+(a) + O --> Si(6)O(n+1)+(a) should be easier.     

Electronic structure and thermochemical properties of silicon-doped lithium clusters Li(n)Si0/+, n = 1-8: new insights on their stability

A theoretical investigation on small silicon-doped lithium clusters Li(n)Si with n = 1-8, in both neutral and cationic states is performed using the high accuracy CCSD(T)/complete basis set (CBS) method. Location of the global minima is carried out using a stochastic search method and the growth pattern of the clusters emerges as follows: (i) the species Li(n)Si with n ≤ 6 are formed by directly binding one Li to a Si of the smaller cluster Li(n-1)Si, (ii) the structures tend to have an as high as possible symmetry and to maximize the coordination number of silicon. The first three-dimensional global minimum is found for Li(4)Si, and (iii) for Li(7)Si and Li(8)Si, the global minima are formed by capping Li atoms on triangular faces of Li(6)Si (O(h)). A maximum coordination number of silicon is found to be 6 for the global minima, and structures with higher coordination of silicon exist but are less stable. Heats of formation at 0 K (Δ(f)H(0)) and 298 K (Δ(f)H(298)), average binding energies (E(b)), adiabatic (AIE) and vertical (VIE) ionization energies, dissociation energies (D(e)), and second-order difference in total energy (Δ(2)E) of the clusters in both neutral and cationic states are calculated from the CCSD(T)/CBS energies and used to evaluate the relative stability of clusters. The species Li(4)Si, Li(6)Si, and Li(5)Si(+) are the more stable systems with large HOMO-LUMO gaps, E(b), and Δ(2)E. Their enhanced stability can be rationalized using a modified phenomenological shell model, which includes the effects of additional factors such as geometrical symmetry and coordination number of the dopant. The new model is subsequently applied with consistency to other impure clusters Li(n)X with X = B, Al, C, Si, Ge, and Sn.     

Structure and stability of oxygen adsorption on Si(n) (n = 5-10) clusters

The structures, binding energies, and electronic properties of one oxygen atom (O) and two oxygen atoms (2O) adsorption on silicon clusters Si(n) with n ranging from 5 to 10 are studied systematically by ab initio calculations. Twelve stable structures are obtained, two of which are in agreement with those reported in previous literature and the others are new structures that have not been proposed before. Further investigations on the fragmentations of Si(n)O and Si(n)O2 (n = 5-10) clusters indicate that the pathways Si(n)O --> Si(n-1) + SiO and Si(n)O2 --> Si(n-2) + Si2O2 are most favorable from thermodynamic viewpoint. Among the studied silicon oxide clusters, Si8O, Si9O, Si5O2 and Si8O2 correspond to large adsorption energies of silicon clusters with respect to O or 2O, while Si8O, with the smallest dissociation energy, has a tendency to separate into Si7 + SiO. Using the recently developed quasi-atomic minimal-basis-orbital method, we have also calculated the unsaturated valences of the neutral Si(n) clusters. Our calculation results show that the Si atoms which have the largest unsaturated valences are more attractive to O atom. Placing O atom right around the Si atoms with the largest unsaturated valences usually leads to stable structures of the silicon oxide clusters.     

Structure and stability of (TiO2)n, (SiO2)n, and mixed Ti(m)Si(n-m)O(2n) [n = 2-5, m = 1 to (n - 1)] clusters

Structures, energetics, and vibrational spectra are investigated for small pure (TiO(2))(n), (SiO(2))(n), and mixed Ti(m)Si(n-m)O(2n) [n = 2-5, m = 1 to (n - 1)] oxide clusters by density functional theory (DFT). The BP86/ATZP level of theory is employed to obtain constitutional isomers of the oxide clusters. In accordance with previous studies, our calculations show three-dimensional compact structures are preferred for pure (TiO(2))(n) with oxo-stabilized higher hexavalent states, and linear chain structures are favored for pure (SiO(2))(n) with tetravalent states. However, the herein theoretically first reported mixed Ti(m)Si(n-m)O(2n) oxide clusters prefer either three-dimensional compact or linear chain structures depending upon the stoichiometry of the compound. Vibrational analysis of the important modes of some highly stable structures is provided. Coupled-cluster single and double excitation (with triples) [CCSD(T)] computed energy gaps for the TiO(2) dimers compare well with results from previous study. Excitation energies are computed by use of time-dependent (TD) DFT and equation-of-motion coupled-cluster calculations with singles and doubles (EOM-CCSD) for the most stable isomers.     

Investigation of Size-Selective Zr(2)@Si(n) (n = 16-24) Caged Clusters

The size-selective Zr(2)Si(n) (n = 16-24) caged clusters have been investigated by density functional approach in detail. Their geometries, relative stabilities, electronic properties and ionization potentials have been discussed. The dominant structures of bimetallic Zr(2) doped silicon caged clusters gradually transform to Zr(2) totally encapsulated structures with increase of the clustered size from 16 to 24, which is good agreement with the recent experimental result (J. Phys. Chem. A. 2007, 111, 42). Two novel isomers, i.e., naphthalene-like and dodecahedral Zr(2)Si(20) clusters, are found as low-lying conformers. Furthermore, the novel quasi-1D naphthalene-like Zr(n)Si(m) nanotubes are first reported. The second-order energy differences reveal that magic numbers of the different sized neutral Zr(2)Si(n) clusters appear at n = 18, 20 and 22, which are attributed to the fullerene-like, dodecahedral and polyhedral structures, respectively. The HOMO-LUMO gaps (>1 eV) of all the size-selective Zr(2)Si(n) clusters suggest that encapsulation of the bimetallic zirconium atoms is favorable for increasing the stabilities of silicon cages.     

Geometries, stabilities, and growth patterns of the bimetal Mo2-doped Sin (n=9-16) clusters: a density functional investigation

The behaviors of the bimetal Mo-Mo doped cagelike silicon clusters Mo2Sin at the size of n=9-16 have been investigated systematically with the density functional approach. The growth-pattern behaviors, relative stabilities, and charge-transfer of these clusters are presented and discussed. The optimized geometries reveal that the dominant growth patterns of the bimetal Mo-Mo doped on opened cagelike silicon clusters (n=9-13) are based on pentagon prism MoSi10 and hexagonal prism MoSi12 clusters, while the Mo2 encapsulated Sin(n=14-16) frames are dominant growth behaviors for the large-sized clusters. The doped Mo2 dimer in the Sin frames is dissociated under the interactions of the Mo2 and Sin frames which are examined in term of the calculated Mo-Mo distance. The calculated fragmentation energies manifest that the remarkable local maximums of stable clusters are Mo2-doped Sin with n=10 and 12; the obtained relative stabilities exhibit that the Mo2-doped Si10 cluster is the most stable species in all different sized clusters. Natural population analysis shows that the charge-transfer phenomena appearing in the Mo2-doped Sin clusters are analogous to the single transition metal Re or W doped silicon clusters. In addition, the properties of frontier orbitals of Mo2-doped Sin (n=10 and 12) clusters show that the Mo2Si10 and Mo2Si12 isomers have enhanced chemical stabilities because of their larger HOMO-LUMO gaps. Interestingly, the geometry of the most stable Mo2Si9 cluster has the framework which is analogous to that of Ni2Ge9 cluster confirmed by recent experimental observation (Goicoechea, J. M.; Sevov, S. C. J. Am Chem. Soc. 2006, 128, 4155).     

Efficiency of random search procedures along the silicon cluster series: Si(n) (n=5-10, 15, and 20)

The efficiency of the simplest isomeric search procedure consisting in random generation of sets of atomic coordinates followed by density functional theory geometry optimization is tested on the silicon cluster series (Si(5-10, 15, 20)). Criteria such as yield, isomer distributions and recurrences are used to clearly establish the performance of the approach with respect to increasing cluster size. The elimination of unphysical candidate structures and the use of distinct box shapes and theoretical levels are also investigated. For the smaller Si(n) (n=5-10) clusters, the generation of random coordinates within a spherical box is found to offer a reasonable alternative to more complex algorithms by allowing straightforward identification of every known low-lying local minima. The simple stochastic search of larger clusters (i.e. Si(15) and Si(20)) is however complicated by the exponentially increasing number of both low- and high-lying minima leading to rather arbitrary and non-comprehensive results.     

Theoretical studies on the bonding and thermodynamic properties of Ge n Si m (m+n=5) clusters: the precursors of germanium/silicon nanomaterials

Theoretical studies on the Ge n Si m clusters have been carried out using advanced ab initio approaches. The lowest energy isomers were determined for the clusters with compositions n+m=2-5. All possible isomers arising due to permutations of Ge and Si atoms were investigated. The L-shaped structure for the trimers, tetragonal with diagonal bond for tetramers, and a trigonal bipyramid for pentamers represent the energy optimized ground state geometries. The bonding analyses revealed that the trimers and tetramers are stabilized through multicenter pi bonding. In pentamers, this stabilizing factor is eliminated due to the further cluster growth. The ionization of clusters does not change their geometrical characteristics. The agreement of the calculated ionization and atomization energies with those obtained from the mass spectrometric studies (through estimated appearance potential) validated the reported structures of the clusters. The bonding properties of these species are discussed using their molecular orbital characteristics and analysis of natural bond orbital population data.     

Density Functional Theory Study on the Structural and Electronic Properties of Ge（SiO_2）_n Clusters

The geometry,stability,binding energy and electronic properties of(SiO2)n and Ge(SiO2)n clusters(n = 7) have been investigated by Density functional theory(DFT).The results show that the lowest energy structures of Ge(SiO2)n are obtained by adding one Ge on the end site of the O atom or the Si near end site of the O atom in(SiO2)n.The chemical activation of Ge-(SiO2)n is improved compared with(SiO2)n.The calculated second-order difference of energies and fragmentation energies show that the Ge(SiO2)n clusters with n = 2 or 5 are stable.     

Density-functional study of structural and electronic properties of Si(n)C(n) (n=1-10) clusters

Density-functional theory with generalized gradient approximation for the exchange-correlation potential has been used to calculate the structural and electronic structure of Si(n)C(n) (n=1-10) clusters. The geometries are found to undergo a structural change from two dimensional to three dimensional when the cluster size n equals 4. Cagelike structures are favored as the cluster size increases. A distinct segregation between the silicon and carbon atoms is observed for these clusters. It is found that the C atoms favor to form five-membered rings as the cluster size n increases. However, the growth motif for Si atoms is not observed. The Si(n)C(n) clusters at n=2, 6, and 9 are found to possess relatively higher stability. On the basis of the lowest-energy geometries obtained, the size dependence of cluster properties such as binding energy, HOMO-LUMO gap, Mulliken charge, vibrational spectrum, and ionization potential has been computed and analyzed. The bonding characteristics of the clusters are discussed.     

Cage and tube structures of medium-sized zinc oxide clusters (ZnO)n (n=24, 28, 36, and 48)

Following our recent work which revealed that the lowest-energy structures of (ZnO)n (n=9-18) follow cage and tube structural growth patterns with stacks of small subunits of (ZnO)2 and (ZnO)3 [Wang et al., J. Phys. Chem. C 111, 4956 (2007)], we have extended the search for the most stable structures to some larger clusters, i.e., (ZnO)n (n=24, 28, 36, and 48) by using gradient-corrected density-functional theory (DFT). A number of starting configurations belonging to different structural motifs were generated from handmade constructions with chemical intuition and then optimized via DFT calculations. Within the size range studied, cage and tube structures were found to be the most preferred structural motifs for the (ZnO)n clusters.