Exotic superconducting state embedded in the hidden order state of URu2Si2

The heavy-fermion compound URu₂Si₂ has mystified researchers since the superconducting state (T_c = 1.45 K) is embedded within the enigmatic ‘‘hidden order” phase (T_h = 17.5 K). Here, we report charge and thermal transport measurements on ultraclean single crystals of URu₂Si₂ with very large residual-resistivity-ratio down to 30 m K (∼T_c/50), which reveal a number of unprecedented superconducting properties. The results provide strong evidence for a new type of unconventional superconductivity with two distinct gaps having different nodal topology. We propose a gap function with chiral d-wave form Δ(k) = Δ₀k_z(k_x + ik_y). We also demonstrate that a distinct flux line lattice melting transition with outstanding characters occurs well below the upper critical fields even at sub-Kelvin temperature. The intriguing superconducting state of URu₂Si₂ adds a unique and exciting example to the list of unconventional superconductors.     

Magnetocaloric and barocaloric effects in a Gd5Si2Ge2 compound

The first-order phase transition in Gd₅Si₂Ge₂ is sensitive to both magnetic field and pressure. It may indicate that the influences of the magnetic field and the pressure on the phase transition are virtually equivalent. Moreover, theoretical analyses reveal that the total entropy change is almost definite at a certain Curie temperature no matter whether the applied external field is a magnetic field or a pressure. The entropy change curve can be broadened dramatically under pressure, and the refrigerant capacity is improved from 284.7 J/kg to 447.0 J/kg.     

Structural study of the Lu2Si2O7-Sc2Si2O7 system

Different compositions in the Lu₂Si₂O₇-Sc₂Si₂O₇ system have been synthesized following the ceramic method. All XRD patterns are compatible with the thortveitite structure (β-RE₂Si₂O₇ polymorph). Unit cell parameters change linearly with composition, which indicates a complete solid solubility of Sc₂Si₂O₇ in Lu₂Si₂O₇. ²⁹Si MAS NMR spectra show a decrease of the ²⁹Si chemical shift with increasing Sc content. A correlation reported in the literature to predict ²⁹Si chemical shifts in silicates is applied here to obtain the theoretical variation in ²⁹Si chemical shift values in the system Lu₂Si₂O₇-Sc₂Si₂O₇ and the results compare favourably with the values obtained experimentally. The FWHM values of the ²⁹Si MAS NMR curves indicate a random distribution of Lu and Sc in the structure of the intermediate members. Finally, the IR study of the system confirms the solubility of Sc₂Si₂O₇ in Lu₂Si₂O₇, showing the splitting of several modes in the intermediate members and a linear shift of the frequency on going from one end-member to the other.     

La0.67Ca0.33MnO3薄膜皮秒光电效应

在1064 nm波长脉冲激光（脉宽25 ps）的照射下，钙钛矿氧化物薄膜La0.67Ca0.33MnO3/SrTiO3具有超快光电效应，对激光脉冲显示ps量级的响应时间，上升沿响应时间300 ps，半高宽700 ps，同时，对激光能量的响应灵敏度为500 mV/mJ。     

Li2C2中电声耦合及超导电性的第一性原理计算研究

通过第一性原理密度泛函和超导Eliashberg理论计算, 我们研究了Li₂C₂在Cmcm相的电子结构和电声耦合特性, 预言这种材料在常压和5GPa下是由电声耦合导致的转变温度分别为13.2 K 和9.8 K的超导体, 为实验上探索包含一维碳原子链的材料中是否可能存在超导电性、发现新的超导体提供了理论依据. 如果理论所预言的Li₂C₂超导电性得到实验的证实, 这将是锂碳化物中转变温度最高的超导体, 高于实验观测到的LiC₂的1.9 K和理论预言的单层LiC₆的8.1 K超导转变温度.     

新型超导材料MgCNi3的电子结构与超导电性研究

用MS-Xα方法研究了非氧化物超导材料MgCNi₃的电子结构. 研究结果显示, 态密度分布曲线的主峰靠近Fermi面, 主要来自于Ni的d电子的贡献. 用T(T=Co，Mn，Cu)替代MgCNi₃中的部分Ni形成化合物MgCNi₂T，替代使Ni的价电子数减小, 价态发生变化, Fermi面处态密度N(E_F)减小. 计算结果表明：无论是电子掺杂（Cu）还是空穴掺杂（Co，Mn），MgCNi₃的超导电 关键词： 电子结构 态密度 超导电性     

LaFe11.4Al1.6中铁磁相与反铁磁相的双相共存

通过磁场下热磁曲线的测量，在LaFe114Al16化合物中发现了一个在一定温区内随温度稳定的铁磁相和反铁磁相的共存亚稳态.确定了这个亚稳态能够存在的磁场和温度范围，从而使LaFe114Al16化合物的磁相图更加完善.这个亚稳态的温度稳定性能够很好地解释磁性转变的临界场随温度的变化行为.这个双相共存亚稳态的存在，与LaFe114Al16中的磁性交换作用及晶格畸变所产生的边界相的稳定性有关. 关键词： 共存相 亚稳态 晶格畸变     

Destruction of pressure-induced superconductivity by long-range antiferromagnetic order in Tm2Fe3Si5

Reentrant superconductivity has been detected in a well characterized sample of Tm₂Fe₃Si₅ by ac susceptibility measurements under applied pressure. The superconducting transition temperature displays a pronounced, non-linear behavior under pressure, starting at low pressures with an increase which is among the largest known for any compound (dT_c1/dp = 0.47 K/kbar). The magnetic transition temperature is relatively pressure independent.     

Coexistence of superconductivity and long-range magnetic order in TmRh4B4

Electrical resistance, heat capacity, thermal conductivity and linear thermal expansion coefficient measurements on TmRh₄B₄ indicate that superconductivity and long-range magnetic order coexist in this compound for temperatures less than 0.4 K.     

Ce:Lu2Si2O7闪烁晶体的结构和光谱特性

采用中频感应提拉法生长出Ce:Lu₂Si₂O₇（Ce:LPS） 晶体. 通过x射线粉 末衍射分析，晶体结构属单斜晶系的C2/m空间群. 光学显微镜下可观测到晶体的（110 ）解理. 在室温下测试了Ce:LPS晶体的吸收光谱、激发光谱和发射光谱. 结果表明，Ce:LPS 晶体的吸收峰只有两个，分别位于302和349 nm，且与激发峰的位置一致，归因于Ce³⁺ 的4f¹→5d¹跃迁的特征吸收所致. 发射光谱具有Ce^{3+< /sup>典型的双峰特征 ，经Gaussian多峰值拟合，带状谱是由384和407 nm两个发射峰叠加而成，且后者的强度明 显高于前者. 关键词： 2Si₂O₇')" href="#">Ce:Lu₂Si₂O₇ 提拉法 晶体结构 光学 特性}     

Optical spectroscopy of Ca3Sc2Si3O12, Ca3Y2Si3O12 and Ca3Lu2Si3O12 doped with Pr

The silicates Ca₃Sc₂Si₃O₁₂, Ca₃Y₂Si₃O₁₂ and Ca₃Lu₂Si₃O₁₂, both undoped and doped with Pr³⁺ ions, have been synthesized by solid-state reaction at high temperature. The luminescence spectroscopy and the excited state dynamics of the materials have been studied upon VUV and X-ray excitation using synchrotron radiation. All doped samples have shown efficient 5d-4f emission upon direct VUV excitation of 5d levels, but only Ca₃Sc₂Si₃O₁₂:Pr³⁺ shows luminescence upon interband VUV or X-ray excitation. The VUV excited emission spectra of Ca₃Y₂Si₃O₁₂:Pr³⁺ and Ca₃Lu₂Si₃O₁₂:Pr³⁺ show features attributed to emission from two distinct sites accommodating the Pr³⁺ dopant. The decay kinetics of the Pr³⁺ 5d-4f emission in Ca₃Sc₂Si₃O₁₂:Pr³⁺ upon VUV excitation across the band gap are characterized by decay times in the range 25-28 ns with no significant rise after the excitation pulse. They appear to be faster upon X-ray irradiation than for VUV excitation. Weak afterglow components are attributed to defect luminescence.     

Gd替代YBa2Cu3O7－δ超导体的相结构与局域电子结构的研究

利用正电子湮没实验，结合x射线衍射(XRD)结构分析，研究了具有混合稀土特征的(Y_{1 -x}Gd_x)Ba₂Cu₃O_7-δ系列样品. XRD 实验结果表明，半径较大的Gd离子Y位替代使得样品晶胞参数和晶胞体积增大，但所有样品 仍保持与YBa₂Cu₃O_7-δ(YBCO)样品相同的单相正交结 构. 正电子湮没实验表明，正电子各寿命参数表现出很强的Gd替代依赖关系. 从正电子实验 结果出发，计算了Cu-O链区局域电子密度n_e的变化. 结果表明，局域电子密度n _e随Gd含量x的增加而减小，而超导转变温度T_c随局域电子密度ne的减小而增加，这种局域电子密度n_e与超导电性的关联是与铜位替代 完全不同的，且可能是近年来人们关于混合稀土铜氧化物体系具有较高临界电流密度的原因 之一. 该研究结果为铜氧化物超导体的应用和机理研究提供了相应的正电子实验资料. 关键词： 超导电性 正电子湮没 相结构 局域电子密度     

多铁材料MnSb2O6中自旋涨落的ESR研究

具有手性晶体结构的MnSb₂O₆其基态为螺旋磁序,对外磁场有着响应丰富的铁电性.本文通过助熔剂法制备了高质量MnSb₂O₆单晶.电子自旋共振谱(ESR)的结果表明其共振场具有类似铁磁材料的各向异性温度依赖关系.这一结果表明MnSb₂O₆基态的螺旋磁序在外磁场中形成了随磁场方向转动的圆锥磁序相(conical phase).对共振峰半高宽的进一步拟合得到一个意外小的临界指数,这表明MnSb₂O₆中的磁矩具有二维特征并且存在着较强的竞争相互作用.     

Combinative energy, oxygen deficiency and superconductivity in LnBa2Cu3O7-x （Ln=Nd, Er, Sm）

The correlation among the combinative energy, superconductivity, oxygen content, the position of holes in different planes, and the position of holes in the Cu(2)-O plane in LnBa2Cu3O7-x (Ln=Nd, Er, and Sin) has been investigated on the basis of a block model. The results indicate that the combinative energy decreases with increasing Tc in all of these compounds. And also, the combinative energies are obviously different with holes at different positions in the Cu(2)-O plane when the oxygen deficiency is low. However, this difference becomes less with increasing the oxygen deficiency.The effect of the holes in different positions on the combinative energy supplies some clue to the understanding of an unresolved problem, i.e. whether the distribution of carriers in the CuO2 plane is uniform or inhomogeneous. The results not only show that the structural characters, the combinative energy between two structural blocks and the superconductivity are closely interrelated in this class of compounds, but also reveal some differences among these systems. The relationship between the combinative energy and the Tc value in NdBa2Cu3O7-x shows some features different from the systems containing Er or Sm.     

Amorphous Er2O3 films for antireflection coatings

This paper reports that stoichiometric, amorphous, and uniform Er2O3 films are deposited on Si(001) substrates by a radio frequency magnetron sputtering technique. Ellipsometry measurements show that the refractive index of the Er2O3 films is very close to that of a single layer antireflection coating for a solar cell with an air surrounding medium during its working wavelength. For the 90-nm-thick film, the reflectance has a minimum lower than 3% at the wavelength of 600 nm and the weighted average reflectances (400-1000 nm) is 11.6%. The obtained characteristics indicate that Er2O3 films could be a promising candidate for antireflection coatings in solar cells.     

Annealing effects on the structure and electrical characteristics of amorphous Er2O3 films

Amorphous Er 2 O 3 films are deposited on Si (001) substrates by using reactive evaporation.This paper reports the evolution of the structure,morphology and electrical characteristics with annealing temperatures in an oxygen ambience.X-ray diffraction and high resolution transimission electron microscopy measurement show that the films remain amorphous even after annealing at 700 C.The capacitance in the accumulation region of Er 2 O 3 films annealed at 450 C is higher than that of as-deposited films and films annealed at other temperatures.An Er 2 O 3 /ErO x /SiO x /Si structure model is proposed to explain the results.The annealed films also exhibit a low leakage current density (around 1.38 × 10 4 A/cm 2 at a bias of 1 V) due to the evolution of morphology and composition of the films after they are annealed.     

Coexistence of superconductivity and long-range antiferromagnetic order in Gd1.2Mo6Se8

Neutron diffraction experiments confirm that the ternary rare earth compound Gd_1.2Mo₆Se₈ orders antiferromagnetically in the superconducting state at a Neél temperature T_N=0.75 K.     

Magnetic structure of the Mn5Si3-type Er5Ge3 compound

The Er₅Ge₃ compound (Mn₅Si₃-type, hP16, P6₃/mcm) at 4 K shows magnetic ordering of the antiferromagnetic type. Its magnetic structure consists of sine modulated collinear magnetic moments of Er that are parallel to the c axis (with a propagation vector k=[0 0 ±0.3]). This corresponds to the magnetic unit cell (a a 10c), the values of the magnetic moment of the Er atoms being, as a general formula, M_z≈M₀ cos [2π(Z–1/4)(1–kZ)], with M₀=9.2(2) μ_B at 4 K.     

晶格失配应力对单晶(BiTm)_3(GaFe)_5O_(12)膜磁畴结构的影响

利用液相外延工艺在钆镓石榴石衬底上制得了单晶(BiTm)_3(GaFe)_5O_(12)膜,研究了晶格失配应力对其磁畴结构的影响.研究发现,生长速率越快,膜的晶格常数越大;晶格失配应力可以在一定范围内调整膜的垂直各向异性;随着晶格失配应力由较大张应力逐渐转变为较大压应力,磁畴形状先由磁泡畴转变成迷宫畴,然后转变为过渡态部分弯曲的条状畴,最终转变为整齐排列的条状畴;失配应力同时对畴宽也有影响,膜受到的失配应力越大,畴宽越大.这一实验研究对基于控制晶格失配应力来调控单晶膜的各向异性和磁畴结构有指导意义.