硅熔化特性的分子动力学模拟–-不同势函数的对比研究

分别采用Stillinger-Weber (SW)势、修正的成熟原子嵌入模型(MEAM)势、 Tersoff势和HOEP (highly optimized empirical potential)势来描述硅原子间相互作用, 运用分子动力学方法对比模拟研究了四种势函数的硅晶体的体熔化和表面熔化特性. 结果表明: 四种势函数均能反映出硅的热膨胀、高温熔化和熔化时吸热收缩等基本物理规律. 但综合对比发现, Tersoff势和MEAM势相对更适合描述硅的熔化和凝固过程, SW势次之, HOEP势则不适合描述硅的熔化和凝固过程. 关键词： 硅 势函数 熔化 分子动力学     

Fractal dimension study of polaron effects in cylindrical GaAs/AlxGa1−xAs core–shell nanowires

Polaron effects in cylindrical GaAs/Al_xGa_1−xAs core–shell nanowires are studied by applying the fractal dimension method. In this paper, the polaron properties of GaAs/AlxGa1-xAs core–shell nanowires with different core radii and aluminum concentrations are discussed. The polaron binding energy, polaron mass shift, and fractal dimension parameter are numerically determined as functions of shell width. The calculation results reveal that the binding energy and mass shift of the polaron first increase and then decrease as the shell width increases. A maximum value appears at a certain shell width for different aluminum concentrations and a given core radius. By using the fractal dimension method, polaron problems in cylindrical GaAs/Al_xGa_1-xAs core–shell nanowires are solved in a simple manner that avoids complex and lengthy calculations.     

空位的第一性原理及经验势函数的对比研究

利用第一性原理及Stillinger-Weber（SW）,EDIP和Tersoff经验势函数对比研究了硅中单空位(V₁)、双空位(V₂)和六边形空位环(V₆)的结构特性及形成能.讨论了经验势函数描述空位时的优点和缺点.结果发现,第一性原理方法可以精确描述空位的原子结构及能量特性,而短程有效的经验势函数无法描述空位所固有的量子效应,如Jahn-Teller变形等.另外,由于经验势函数自身的缺陷,EDIP和T3无法应用于空位结构特性的计算.虽然 关键词： 空位 第一性原理 经验势函数     

The effects of vacancy defects and nitrogen doping on the thermal conductivity of armchair (10, 10) single-wall carbon nanotubes

The influence of vacancy defects and nitrogen doping on the thermal conductivity of typical armchair (10, 10) single-walled carbon nanotubes is investigated using molecular dynamics (MD) simulation. The second-generation reactive empirical bond order potential and Tersoff potential are used to describe the interatomic interactions and the thermal conductivities are calculated using the Müller-Plathe approach (also called non-equilibrium MD simulation). Vacancy defects decrease the thermal conductivity whereas the substitution of nitrogen at vacancy sites improves the thermal conductivity. Quantum correction of the calculated results produces a thermal conductance temperature dependence that is in qualitative agreement with experimental data.     

Multiphase density functional theory parameterization of the interatomic potential for silver and gold

The ground state energies of Ag and Au in the face-centered cubic (FCC), body-centeredcubic (BCC), simple cubic (SC) and the hypothetical diamond-like phase, and dimer werecalculated as a function of bond length using density functional theory (DFT). Theseenergies were then used to parameterize the many-body Gupta potential for Ag and Au. Wepropose a new parameterization scheme that adopts coordination dependence of theparameters using the well-known Tersoff potential as its starting point. Thisparameterization, over several phases of Ag and Au, was performed to guaranteetransferability of the potentials and to make them appropriate for studies of relatednanostructures. Depending on the structure, the energetics of the surface atoms play acrucial role in determining the details of the nanostructure. The accuracy of theparameters was tested by performing a 2?ns MD simulation of a cluster of 55 Ag?atoms – awell studied cluster of Ag, the most stable structure being the icosahedral one. Withinthis time scale, the initial FCC lattice was found to transform to the icosahedralstructure at room temperature. The new set of parameters for Ag was then used in atemperature dependent atom-by-atom deposition of Ag nanoclusters of up to 1000 atoms. Wefind a deposition temperature of 500?±?50?K where low energy clusters are generated,suggesting an optimal annealing temperature of 500?K for Ag cluster synthesis. Surfaceenergies were also calculated via a 3 ns MD simulation.     

MEAM势与Tersoff势比较研究——碳化硅熔化与凝固行为

运用分子动力学方法对比模拟研究了碳化硅的体熔化、表面熔化和晶体生长过程.分别采用MEAM 势和Tersoff势两种势函数描述碳化硅.结果表明:体熔化时,两种势函数描述的SiC的原子平均能量、 Lindemann指数和结构有序参数与温度的变化关系相似,但MEAM势对应的体熔点(4250 K)比Tersoff势(4750 K) 的要高.表面熔化时,两种势函数描述的SiC在相同的过热度下熔化速度相近;而在相同的温度条件下,MEAM 作用的SiC表面熔化速度更快.这是由于MEAM势SiC的热力学熔点(3338 K)低于Tersoff势SiC的热力学熔点 (3430 K)的缘故.两种势函数作用的SiC在晶体生长方面差异很大.MEAM势SiC的晶体生长速度与过冷度有关, 过冷度约为400 K时晶体生长速度最快.但Tersoff势SiC晶体却在过冷度为0—1000 K的范围内均不能生长. 综合考虑,MEAM势比Tersoff势能更好地描述碳化硅的熔化和凝固行为.     

Molecular dynamics of binary metal nitrides and ternary oxynitrides

Ternary systems incorporating metals with oxygen and nitrogen are examined using Tersoff potentials. The apparent success of treating some binary nitride systems using the Tersoff potential is used as a way forward to obtain a new parameter set incorporates atomic features into a series of Tersoff potential for binary nitrides and ternary oxynitrides.     

非晶和纳米ZrO2·Y2O3(15%)的X射线衍射与扩展X射线吸收精细结构研究

利用粉末X射线衍射和扩展X射线吸收精细结构(EXAFS)技术对用化学共沉淀法制备的非晶和纳米ZrO₂·15%Y₂O₃体系进行了研究.粉末X射线衍射结果表明,300℃温度处理的样品呈非晶态,500℃时样品已经晶化,形成单一立方相的纳米结构.EXAFS分析显示,在从非晶态向纳米结构晶化的过程中,最近邻的ZrO配位层的配位数和键长没有发生明显的改变,说明300℃时已经形成和900℃相同的最近邻局域结构.而对于ZrZr(Y)配位层,随着晶粒尺寸的减 关键词： EXAFS 晶化 配位数 键长     

Randomization-and-relaxation model revisited

Abstract

The interatomic potentials of Stillinger-Weber and Tersoff were incorporated into the randomization-and-relaxation model, which was originally developed for modelling amorphous silicon by using the Keating interatomic potential. The inclusion of more recent and more complicated interatomic potentials resulted in a more sophisticated set of bond switching rules which form the basis for the randomization-and-relaxation algorithm. This improved model was then used to model small isolated amorphous zones which are produced by individual heavy ions during ion implantation in silicon. The temperature evolution during zone creation was calculated by using idealized thermal spike model. The structure and stability of these amorphous zones was examined with respect to the energy of incoming ion and with respect to the interatomic potential employed. It was established that significantly lower spike energy is required to create a stable amorphous region than in the simulation where the Keating potential was employed.     

Exploration of Entropy Pair Functional Theory

Evaluation of the entropy from molecular dynamics (MD) simulation remains an outstanding challenge. The standard approach requires thermodynamic integration across a series of simulations. Recent work Nicholson et al. demonstrated the ability to construct a functional that returns excess entropy, based on the pair correlation function (PCF); it was capable of providing, with acceptable accuracy, the absolute excess entropy of iron simulated with a pair potential in both fluid and crystalline states. In this work, the general applicability of the Entropy Pair Functional Theory (EPFT) approach is explored by applying it to three many-body interaction potentials. These potentials are state of the art for large scale models for the three materials in this study: Fe modelled with a modified embedded atom method (MEAM) potential, Cu modelled with an MEAM and Si modelled with a Tersoff potential. We demonstrate the robust nature of EPFT in determining excess entropy for diverse systems with many-body interactions. These are steps toward a universal Entropy Pair Functional, EPF, that can be applied with confidence to determine the entropy associated with sophisticated optimized potentials and first principles simulations of liquids, crystals, engineered structures, and defects.     

Miscibility of In x Ga1−x As alloys: a study using atomistic simulations

Atomistic simulations are used in combination with the two potential energy functions, namely, the Valence Force Field (VFF) model and the Tersoff model, to study the solution thermodynamics of In _x Ga_1?x As alloy. The simulation data, in the form of a T ? x diagram, is contrasted with the results obtained by using the Ho and Stringfellow approach. It is observed that for the VFF model, the upper critical solution temperature obtained from simulation data is approximately 850 K, which is higher than the 729 K predicted by the Ho and Stringfellow treatment. The composition range for which the two-phase heterogeneous region exists is wider than that predicted by the Ho and Stringfellow approach. The Tersoff model predicts a complex miscibility diagram, where the 850 K temperature corresponds to the approximate ‘eutectic’ temperature. Further improvement of model predictions may be made possible by investigation of temperature and composition dependent interaction parameter in a modified regular solution theory, and investigation of non-random, non-ideal solution models in the Ho and Stringfellow treatment, development of temperature dependent VFF model parameters and adjustment of Tersoff model parameters to account for longer range interactions which exist at temperatures above 850 K. The miscibility diagram constructed using the Tersoff model simulation data can be used to provide information on the phase stability and equilibrium Indium content at any given temperature for the crystalline solid solution.     

Comparative study of the empirical interatomic potentials and density-functional simulations of divacancy and hexavacancy in silicon

The comparison between three classical potentials and density functional theory (DFT) is performed mainly for divacancy and hexavacancy in Si crystal. According to their performances on the formation energies and structural properties (distortion magnitude, relaxation volume and symmetry), the limitations and validities of classical potentials are discussed. It is found that the outward relaxation directions of EDIP and Tersoff (T3) are contrary to the DFT and Stillinger-Weber (SW) directions (inward), which restrict their application in the structural property calculations. Except for the divacancy symmetries, the results of SW are in agreement with the DFT results. Thus, it can be concluded that SW should be the best potential to describe V₂ and V₆.     

Evaluation of repeated single-point diamond turning on the deformation behavior of monocrystalline silicon via molecular dynamic simulations

A three-dimensional molecular dynamics simulation study is conducted to investigate repeated single-point turnings of a monocrystalline silicon specimen with diamond tools at nanometric scale. Morse potential energy function and Tersoff potential energy function are applied to model the silicon/diamond and silicon/silicon interactions, respectively. As repeated nano-cutting process on surfaces often involve the interactions between the consequent machining processes, repeated single-point diamond turnings are employed to investigate the phase transformation in the successive nano-cutting processes. The simulation results show that a layer of the damaged residual amorphous silicon remained beneath the surface after the first-time nano-cutting process. The amorphous phase silicon deforms and removes differently in the second nano-cutting process. By considering the coordination number (CN) of silicon atoms in the specimen, it is observed that there is an increase of atoms with six nearest neighbors during the second nano-cutting process. It suggests that the recovery of the crystalline phase from the amorphous phase occurred. Moreover, the instantaneous temperature distributions in the specimen are analyzed. Although the tangential force (F _X ) and the thrust force (F _Y ) become much smaller in the second cutting process, the material resistance rate is larger than the first cutting process. The larger resistance also induces the increase of local temperature between the cutting tool and the amorphous layer in the second cutting process.     

Energetics of carbon nanotubes

We have investigated the energetics of carbon nanotubes. Calculations have been performed by using the empirical many-body potential energy function developed by Tersoff for carbon. Received: 30 March 1998 / Accepted: 28 July 1998     

Effects of vacancy defects and axial strain on thermal conductivity of silicon nanowires: A reverse nonequilibrium molecular dynamics simulation

Thermal conductivity of silicon nanowires (SiNWs) is evaluated using the reverse nonequilibrium molecular dynamics simulation. The Stillinger–Weber (SW) and Tersoff interatomic potentials are employed to simulate thermal conductivity of SiNWs. In this work, the influence of random vacancy defects, axial strain, temperature and length on thermal conductivity and effective mean free path of SiNWs is investigated. It is found that by raising the percent of random vacancy defects, thermal conductivity of SiNWs decreases linearly for the results obtained form SW potential and nonlinearly for those obtained from Tersoff interatomic potential. Dependence of the thermal conductivity on axial strain is also studied. Results show that thermal conductivity increases as compressive strain increases and decreases as tensile strain increases. Influence of temperature is also predicted. It is found that the thermal conductivity of SiNWs decreases with increasing the mean temperature. Most of the simulations are performed for 4 UC×4 UC×40 UC silicon nanowires using ssp boundary condition.     

两种势下硅锗合金熔体快速凝固过程的分子动力学模拟

分别采用S-W势和Tersoff势来描述硅锗原子间相互作用，运用分子动力学方法对比模拟研究了硅锗合金熔体的快速凝固过程。通过对径向分布函数、静态结构因子、键角分布函数、配位数、Voronoi多面体以及宏观密度的研究，综合对比发现，Tersoff 势和S-W势相比更适合描述硅锗合金的快速凝固过程。     

两种势下硅锗合金熔体快速凝固过程的分子动力学模拟

分别采用S-W势和Tersoff势来描述硅锗原子间相互作用,运用分子动力学方法对比模拟研究了硅锗合金熔体的快速凝固过程。通过对径向分布函数、静态结构因子、键角分布函数、配位数、Voronoi多面体以及宏观密度的研究,综合对比发现,Tersoff 势和S-W势相比更适合描述硅锗合金的快速凝固过程。     

Molecular dynamics simulation of zirconia melting

The melting point for the tetragonal and cubic phases of zirconia (ZrO₂) was computed using Z-method microcanonical molecular dynamics simulations for two different interaction models: the empirical Lewis-Catlow potential versus the relatively new reactive force field (ReaxFF) model. While both models reproduce the stability of the cubic phase over the tetragonal phase at high temperatures, ReaxFF also gives approximately the correct melting point, around 2900 K, whereas the Lewis-Catlow estimate is above 6000 K.     

Structural phase transitions and elastic properties of zirconia

The structural phase transformations in various phases (monoclinic, ortho I, ortho II, and tetragonal) of zirconia (ZrO₂) have been investigated using an effective interionic interaction potential. The cohesive energy, the equation of state, and the elastic properties of these phases have also been studied and found to reproduce well the experimentally observed data for almost all the phases of zirconia ceramics.