Effect of dissolved gases on sonochemical oxidation in a 20 kHz probe system: Continuous monitoring of dissolved oxygen concentration and sonochemical oxidation activity

Dissolved gases have a substantial influence on acoustic cavitation and sonochemical oxidation reactions. Little research on the changes in dissolved gases and the resultant changes in sonochemical oxidation has been reported, and most studies have focused only on the initial dissolved gas conditions. In this study, the dissolved oxygen (DO) concentration was measured continuously during ultrasonic irradiation using an optical sensor in different gas modes (saturation/open, saturation/closed, and sparging/closed modes). Simultaneously, the resulting changes in sonochemical oxidation were quantified using KI dosimetry. In the saturation/open mode using five gas conditions of Ar and O₂, the DO concentration decreased rapidly when O₂ was present because of active gas exchange with the atmosphere, and the DO concentration increased when 100% Ar was used. As a result, the order of the zero-order reaction constant for the first 10 min (k_0-10) decreased in the order Ar:O₂ (75:25) > 100% Ar ≈ Ar:O₂ (50:50) > Ar:O₂ (25:75) > 100% O₂, whereas that during the last 10 min (k_20-30) when the DO concentration was relatively stable, decreased in the order 100% Ar > Ar:O₂ (75:25) > Ar:O₂ (50:50) ≈ Ar:O₂ (20:75) > 100% O₂. In the saturation/closed mode, the DO concentration decreased to approximately 70–80% of the initial level because of ultrasonic degassing, and there was no influence of gases other than Ar and O₂. Consequently, k_0-10 and k_20-30 decreased in the order Ar:O₂ (75:25) > Ar:O₂ (50:50) > Ar:O₂ (25:75) > 100% Ar > 100% O₂. In the sparging/closed mode, the DO concentration was maintained at approximately 90% of the initial level because of the more active gas adsorption induced by gas sparging, and the values of k_0-10 and k_20-30 were almost the same as those in the saturation/closed mode. In the saturation/open and sparging/closed modes, the Ar:O₂ (75:25) condition was most favorable for enhancing sonochemical oxidation. However, a comparison of k_0-10 and k_20-30 indicated that there would be an optimal dissolved gas condition that was different from the initial gas condition. In addition, the mass-transfer and ultrasonic-degassing coefficients were calculated using changes in the DO concentration in the three modes.     

A phenomenological investigation into the opposing effects of fluid flow on sonochemical activity at different frequency and power settings. 2. Fluid circulation at high frequencies

Sonochemical activity is dependent on flow patterns within the reactor and either no affect or a decrease in activity was observed at 376, 995, and 1179 kHz from overhead stirring. The interaction of fluid flow with ultrasound was further investigated in this study with circulatory flow. The effect of fluid circulation on radical production was investigated at two circulation speeds, with and without surface stabilisation. The sonochemical activity was determined by the yield of hydrogen peroxide, measured by iodide dosimetry. The sonochemically active region was pictured using sonochemiluminescence imaging and the flow fields were visualised with dyed flow videos. At 376 and 995 kHz, an increase in sonochemical activity was observed with the slower flow rate; however at 1179 kHz, the sonochemical activity was either not affected or decreased. The observed changes in sonochemical activity were attributed to an increase in asymmetry of the bubble collapse brought about by fluid motion.     

The effects of hydrogen peroxide on the sonochemical degradation of phenol and bisphenol A

This report describes the effects of H₂O₂ concentration (0.01, 0.1, 1, and 10 mM) on the sonochemical degradation of phenol and bisphenol A (BPA) using an ultrasonic source of 35 kHz and 0.08 W/mL. The concentration of the target pollutants (phenol or BPA), total organic carbon (TOC), and H₂O₂ were monitored for each input concentration of H₂O₂. The effects of H₂O₂ on the sonochemical degradation of phenol was more significant than that of BPA because phenol has a high solubility and low octanol–water partition coefficient (K_ow) value and is subsequently very likely to remain in the aqueous phase, giving it a greater probability of reacting with H₂O₂. The removal of TOC was also enhanced by the addition of H₂O₂. Some intermediates of BPA have a high K_ow value and subsequently have a greater probability of pyrolyzing by the high temperatures and pressures inside of cavitation bubbles. Thus the removal efficiency of TOC in BPA was higher than that of phenol. The removal efficiencies of TOC were lower than the degradation efficiencies of phenol and BPA. This result is due to the fact that some intermediates cannot readily degrade during the sonochemical reaction. The H₂O₂ concentration decreased but was not completely consumed during the sonochemical degradation of pollutants. The initial H₂O₂ concentration and the physical/chemical characteristics of pollutants were considered to be important factors in determining the formation rate of the H₂O₂. When high concentration of H₂O₂ was added to the solution, the formation rates were relatively low compared to when low concentrations of H₂O₂ were used.     

A computational simulation study on the acoustic pressure generated by a dental endosonic file: Effects of intensity,file shape and volume

One of the uses of ultrasound in dentistry is in the field of endodontics (i.e. root canal treatment) in order to enhance cleaning efficiency during the treatment. The acoustic pressures generated by the oscillation of files in narrow channels has been calculated using the COMSOL simulation package. Acoustic pressures in excess of the cavitation threshold can be generated and higher values were found in narrower channels. This parallels experimental observations of sonochemiluminescence. The effect of varying the channel width and length and the dimensions and shape of the file are reported. As well as explaining experimental observations, the work provides a basis for the further development and optimisation of the design of endosonic files.     

A phenomenological investigation into the opposing effects of fluid flow on sonochemical activity at different frequency and power settings. 1. Overhead stirring

The effect of flow in an ultrasonic reactor is an important consideration for practical applications and for the scale-up of ultrasonic processing. Previous literature on the influence of flow on sonochemical activity has reported conflicting results. Therefore, this work examined the effect of overhead stirring at four different frequencies, 40, 376, 995 and 1179 kHz, in two different reactor configurations. Comparable power settings were utilised to elucidate the underlying mechanisms of interactions between the flow and sonochemical activity. The sonochemical activity was determined by the yield of hydrogen peroxide, measured by iodide dosimetry, and the active region was visualised with sonochemiluminescence imaging. The overhead stirring in the low frequency reactor altered the yield of hydrogen peroxide so it produced the maximum yield out of the four frequencies. The increase in hydrogen peroxide yield was attributed to a reduction in coalescence at 40 kHz. However at the higher frequencies, coalescence was not found to be the main reason behind the observed reductions in sonochemical yield. Rather the prevention of wave propagation and the reduction of the standing wave portion of the field were considered.     

The effects of pre-equilibrium emission and secondary decay on the determination of freeze-out volume at intermediate energies

The effects of pre-equilibrium emission and secondary decay on the determination of the freeze-out volume are investigated using the isospin-dependent quantum molecular dynamics model accompanied by the statistical decay model GEMINI. Small-mass projectiles and large-mass targets with central collisions are studied at intermediate energies. It is revealed that the proton yields of pre-equilibrium emission are smaller than those of secondary decay. However, the determination of the freeze-out volume from the proton yields is more easily affected by pre-equilibrium emission. Moreover, the percentage of proton yields in the freeze-out stage is found to be approximately 50%.     

Experimental study of the effect of helium/nitrogen concentration and initial droplet diameter on nonane droplet combustion with minimal convection

In this paper, we study the influence of inert concentration and initial droplet diameter on nonane (C₉H₂₀) droplet combustion in an environment that promotes spherical droplet flames. The oxygen concentration is fixed while the inert is varied between nitrogen and helium. A range of initial droplet diameters (D_o) are examined in each ambient gas: 0.4 mm < D_o < 0.8 mm; and an oxidizing ambiance consisting of 30% oxygen (fixed) and 70% inert (fixed), with the inert in turn composed of mixtures of nitrogen and helium in concentrations of 0, 25, 50, 75, and 100% N₂. The experiments are carried out at normal atmospheric pressure in a cold ambiance (room temperature) under low gravity to minimize the influence of convection and promote spherical droplet flames. For burning within a helium inert (0% N₂), the droplet flames are entirely blue and there is no influence of initial droplet diameter on the local burning rate (K). With increasing dilution by nitrogen, droplet flames show significant yellow luminosity indicating the presence of soot and the individual burning histories show K reducing with increasing D_o. The evolution of droplet diameter D(t) is nonlinear for a given D_o in the presence of either helium or nitrogen inerts indicating that soot formation has little to do with nonlinear burning. A correlation is presented of the data in the form where the effective burning rate, K′, and ε are concentration-dependent. Correlations for these parameters are presented in the paper.     

The electrical properties of semiconductor/metal,semiconductor/liquid,and semiconductor/conducting polymer contacts

Critical comparisons are drawn between the basic electrical properties of semiconductor/metal, semiconductor/liquid, and semiconductor/conducting polymer junctions. A theoretical model is developed to describe the basic current-voltage properties of semiconductor contacts, with emphasis on the contrasts between ideal and observed behavior. Using the concepts from this model, the characteristics of a variety of semiconductor contacts are evaluated. The discussion focuses on the following semiconductors: Si, GaAs, InP, and II-VI compounds based on the Cd-(chalcogenide) materials.     

Influences of Bi2O3 additive on the microstructure, permeability, and power loss characteristics of Ni-Zn ferrites

Nickel-zinc ferrite materials containing different Bi₂O₃ concentrations have been prepared by the conventional ceramic technique. Micrographs have clearly revealed that the Bi₂O₃ additive promoted grain growth. When the Bi₂O₃ content reached 0.15 wt%, a dual microstructure with both small grains (<5 μm) and some extremely large grains (>50 μm) appeared. With higher Bi₂O₃ content, the samples exhibited a very large average grain size of more than 30 μm. The initial permeability gradually decreased with increasing Bi₂O₃ content. When the Bi₂O₃ content exceeded 0.15 wt%, the permeability gradually decreased with frequency due to the low-frequency resonance induced by the large grain size. Neither the sintering density nor the saturation magnetization was obviously influenced by the Bi₂O₃ content or microstructure of the samples. However, power loss (Pcv) characteristics were evidently influenced. At low flux density, the sample with 0.10 wt% Bi₂O₃, which was characterized by an average grain size of 3-4 μm and few closed pores, displayed the lowest Pcv, irrespective of frequency. When the flux density was equal to or greater than the critical value of 40 mT, the sample with 0.20 wt% Bi₂O₃, which had the largest average grain size, displayed the lowest Pcv.     

Preparation of highly crystalline blue emitting MVO4:Tm (M=Gd, Y) spherical nanoparticles: Effects of activator concentration and annealing temperature on luminescence, lifetime and quantum yield

Highly crystalline spherical nanoparticles of MVO₄:Tm³⁺ (M=Gd, Y) having a size of 20–45 nm were prepared using ethylene glycol as both capping agent and reaction medium. X-ray diffraction study shows linear decrease in the unit cell volume with an increase in Tm³⁺ concentrations in MVO₄ (M=Gd, Y; Tm³⁺=0, 2, 5, 7, 10, 15, 20, 40, 60, 80 and 100 at%), indicative of quantitative substitution of Gd³⁺/Y³⁺ lattice sites by Tm³⁺ ions in MVO₄. Blue light emission at 475 nm is observed after excitation at 310 nm due to energy transfer from VO₄³⁻ absorption band to Tm³⁺. Emission intensity and average decay lifetime increase with an increase in heat treatment from 500 to 900 °C. This has been attributed to an extent of reduction in non-radiative process arising from surface. The emission intensity of Tm³⁺ in GdVO₄ host is higher than that in YVO₄ and thus the former host is better. Quantum yield increases with increase in heat-treatment temperature. This material will be the alternative blue light emitter.     

Ga/N高共掺浓度对ZnO导电性能和红移影响的第一性原理研究

采用密度泛函理论框架下的第一性原理平面波超软赝势方法, 建立了未掺杂ZnO单胞和两种不同浓度的Ga/N高共掺ZnO超胞模型, 分别进行了几何结构优化、总态密度分布和能带分布的计算. 研究表明, ZnO高共掺Ga/N的条件下, Ga/N高共掺浓度越大, 导电性能越弱, 并且高掺杂后高能区红移效应显著, 计算得到的结果与实验结果的变化趋势一致. 关键词： Ga/N高共掺ZnO 电导率 红移 第一性原理     

表面钝化前后Al0.22Ga0.78N/GaN异质结势垒层应变的高温特性

用高分辨X射线衍射仪(HRXRD)研究了表面钝化前后Al_0.22Ga_0.78N/ GaN异质结势垒层应变的高温特性，温度变化范围从室温到813K.结果表明，对未钝化的异质 结，当测试温度高于523K时，Al_0.22Ga_0.78N势垒层开始出现应变 弛豫；钝化后，在Al_0.22Ga_0.78N势垒层中会产生一个附加的平面 拉伸应变，并随着温度的增加，势垒层中的平面拉伸应变会呈现出一个初始的增加，接着应 变将减小，对100nm厚的Al_0.22Ga_0.78N势垒层，应变只是轻微地减 小，但对于50nm厚的Al_0.22Ga_0.78N势垒层，则出现了严重的应变 弛豫现象. 关键词： 0.22Ga_0.78N/GaN异质结')" href="#">Al_0.22Ga_0.78N/GaN异质结 应变 3 N₄钝化')" href="#">Si₃ N₄钝化 高温XRD     

Design,fabrication and characterization of a Schottky diode on an AlGaAs/GaAs HEMT structure for on-chip RF power detection

A Schottky diode was designed and fabricated on an n-AlGaAs/GaAs high electron mobility transistor (HEMT) structure for RF power detection. The processing steps used in the fabrication were the conventional steps used in standard GaAs processing. Current–voltage measurements showed that the devices had rectifying properties with a barrier height of 0.5289–0.5468 eV. The fabricated Schottky diodes detected RF signals well and their cut-off frequencies up to 20 GHz were estimated in direct injection experiments. To achieve a high cut-off frequency, a smaller Schottky contact area is required. The feasibility of direct integration with the planar dipole antenna via a coplanar waveguide transmission line without insertion of matching circuits was discussed. A higher cut-off frequency can also be achieved by reducing the length of the coplanar waveguide transmission line. These preliminary results represent a breakthrough as regards direct on-chip integration technology, towards the realization of a ubiquitous network society.     

第一原理研究界面弛豫对InAs/GaSb超晶格界面结构、能带结构和光学性质的影响

通过广义梯度近似的第一原理全电子相对论计算, 研究了不同界面类型InAs/GaSb超晶格的界面结构、电子和光吸收特性. 由于四原子界面的复杂性和低对称性, 通过对InAs/GaSb超晶格进行电子总能量和应力最小化来确定弛豫界面的结构参数. 计算了InSb, GaAs型界面和非特殊界面(二者交替)超晶格的能带结构和光吸收谱, 考察了超晶格界面层原子发生弛豫的影响.为了证实能带结构的计算结果, 用局域密度近似和Hartree-Fock泛函的平面波方法进行了计算. 对不同界面类型InAs/GaSb超晶格的能带结构计算结果进行了比较, 发现界面Sb原子的化学键和离子性对InAs/GaSb超晶格的界面结构、 能带结构和光学特性起着至关重要的作用.     

The theoretical study on the potential energy curves for X^1 ∑^＋, A^1 ⅡI and C^1 ∑^- states of SiO molecule

This paper applies the symmetry-aziapted-cluster/symmetry-adapted-cluster configuration-interaction （SAC/SACCI） method to optimize the structures for X^1∑^＋, A^1 Ⅱ and C^1 ∑^- states of SiO molecule with the basis sets D95＋＋, 6-311＋＋G and 6-311＋＋G^＊＊. Comparing the obtained results with the experiments, it gets the conclusion that the basis set 6-311＋＋G^＊＊ is most suitable for the optimal structure calculations of X^1.∑^＋, A^Ⅱ and C^1∑^- states of SiO molecule. The whole potential energy curves for these electronic states are further scanned by using SAC/6-311＋＋G^＊＊ method for the ground state and SAC-CI/6-311＋＋G^＊＊ method for the excited states, then use a least square method to fit Murrell~Sorbie functions, at last the spectroscopic constants and force constants are calculated, which are in good agreement with the experimental data.     

Characteristics of SRS inversion for measurement of temperature and CO2 concentration profile of a combustion gas layer

The spectral remote sensing (SRS) inversion technique to determine the complex, line-of-sight temperature distribution from gas emission data at is analytically investigated with two proposed algorithms. The modified constrained inversion method (MCIM) and the base function based inversion method (BFIM) are extensively tested to evaluate their convergence characteristics for practical applications. The MCIM shows good applicability only to relatively simple profiles, while the BFIM gives reasonable estimations even for multi-peak profiles provided that appropriate base functions are selected. Further, simultaneous inversion of temperature and concentration is tried and it is found to be accurately achieved when there is an inter-correlation between them.     

The effects of substrate temperature on the structure, morphology and photoluminescence properties of pulsed laser deposited SrAl2O4:Eu,Dy thin films

In this study, SrAl₂O₄:Eu²⁺,Dy³⁺ thin film phosphors were deposited on Si (1 0 0) substrates using the pulsed laser deposition (PLD) technique. The films were deposited at different substrate temperatures in the range of 40-700 °C. The structure, morphology and topography of the films were determined by using X-ray diffraction (XRD), atomic force microscopy (AFM), scanning electron microscopy (SEM) and high resolution transmission electron microscopy (HRTEM). Photoluminescence (PL) data was collected in air at room temperature using a 325 nm He-Cd laser as an excitation source. The PL spectra of all the films were characterized by green phosphorescent photoluminescence at ∼530 nm. This emission was attributed to 4f⁶5d¹→4f⁷ transition of Eu²⁺. The highest PL intensity was observed from the films deposited at a substrate temperature of 400 °C. The effects of varying substrate temperature on the PL intensity were discussed.     

Fe monolayers on InAs(0 0 1): An in situ study of surface, interface and volume magnetic anisotropy

The magnetic anisotropy of epitaxial Fe films with thicknesses in the range of 2-142 monolayers (ML) grown on {4×2} reconstructed InAs(0 0 1) was investigated by in situ ferromagnetic resonance. The easy magnetization direction was found to be parallel to the -direction for Fe films below 4 ML, while it rotates by 45^° toward the -direction. It is observed that both surface-interface and volume contribution to the perpendicular anisotropy favor an easy axis perpendicular to the film plane. The cubic surface-interface anisotropy is relatively large with easy axes along -directions in contrast to the volume contribution which favors easy axes along the -directions. The volume contribution is found to be larger than the Fe bulk cubic anisotropy. A thickness independent uniaxial anisotropy has been found in films with a thickness of 2 up to 142 ML.