The influence of radiation-induced vacancy on the formation of thin-film of compound layer during a reactive diffusion process

A theoretical approach is developed that describes the formation of a thin-film of AB-compound layer under the influence of radiation-induced vacancy. The AB-compound layer is formed as a result of a chemical reaction between the atomic species of A and B immiscible layers. The two layers are irradiated with a beam of energetic particles and this process leads to several vacant lattice sites creation in both layers due to the displacement of lattice atoms by irradiating particles. A- and B-atoms diffuse via these lattice sites by means of a vacancy mechanism in considerable amount to reaction interfaces A/AB and AB/B. The reaction interfaces increase in thickness as a result of chemical transformation between the diffusing species and surface atoms (near both layers). The compound layer formation occurs in two stages. The first stage begins as an interfacial reaction controlled process, and the second as a diffusion controlled process. The critical thickness and time are determined at a transition point between the two stages. The influence of radiation-induced vacancy on layer thickness, speed of growth, and reaction rate is investigated under irradiation within the framework of the model presented here. The result obtained shows that the layer thickness, speed of growth, and reaction rate increase strongly as the defect generation rate rises in the irradiated layers. It also shows the feasibility of producing a compound layer (especially in near-noble metal silicide considered in this study) at a temperature below their normal formation temperature under the influence of radiation.     

Cortical diversity in three species groups of Parmotrema sensu lato (Parmeliaceae,lichenized Ascomycota)

Conventional techniques for structural studies under light microscope were employed to describe and compare the upper cortex anatomy in three species groups of Parmotrema sensu lato. This study indicates that there is a pattern in the structure of the upper cortex in all the three groups of Parmotrema species studied here, and this pattern can be used to place each species group separately within the genus Parmotrema. Although the species of Parmotrema studied have palisade prosoplectenchymatous upper cortex, there are clear differences between the analyzed groups. The upper cortex of Parmotrema s. str. can be characterized by more elongated cells and very compressed hyphae with small interstices between them; the upper cortex of the species with reticular maculae is characterized by the presence of maculae produced by the organization of hyphae that rise towards to the upper cortex and that are not so compressed, while the upper cortex of the species with dimorphic rhizinae has less elongated almost-rounded cells without interstices or cracks but is generally accompanied by aeroplectenchyma. Besides, the first cell layer of the upper cortex presents differential staining by toluidine blue and the epicortex is tightly attached to it.     

Ultrastructure of the siphonaceous green alga Halimeda cuneata,with emphasis on the cytoskeleton

Cytoplasm streaming is a fundamental process for the transport of molecules and organelles in plant cells. In vegetative filaments of the coenocytic green alga, Halimeda cuneata Hering, the spatial organisation of microtubules in the cytoplasmic layer, was observed under transmission electron microscopy. A cross section of a cortical filament shows a tubular cell wall enclosing a peripheral layer of cytoplasm with numerous chloroplasts, amyloplasts, nuclei, mitochondria and microtubules surrounding a small central vacuole. Towards the thallus medulla the central vacuole enlarges considerably and the cytoplasm becomes gradually reduced to a thin parietal layer, the number of organelles is reduced and the quantity of microtubules increases. Therefore, most of the thallus volume is occupied by the huge central vacuole which extends throughout the coenocytic filaments. Microtubules run longitudinally, being about 0.05 μm from each other. Some microtubules were observed in close association to cell organelles.     

超声速平板圆台突起物绕流实验和数值模拟研究

高速飞行器表面不可避免的存在突起物并形成复杂流场, 从而引起飞行器气动特性和热载荷的变化; 同时, 突起物是流动控制的重要方法之一, 合适的突起物形状及安装位置对于改善冲压发动机进气道性能有重要意义. 本文采用基于纳米粒子的平面激光散射技术(NPLS)研究了马赫3.0来流边界层为层流的平板上三个不同高度圆台突起物绕流流场, 主要关注了突起物后方的尾迹边界层, 并采用高精度的显式五阶精度加权紧致非线性格式(WCNS-E-5)离散求解Navier-Stokes方程模拟了该流场. 获得了超声速圆台绕流精细流场结构, 观察到突起物后方尾迹区域边界层发展的过程. 结合实验和数值模拟结果可以发现, 当圆台高度接近或者小于当地边界层厚度时, 突起物对边界层的扰动非常弱, 圆台后方尾迹边界层能够维持较长距离的层流状态, 在边界层转捩阶段也有清晰的发卡涡结构出现; 反之, 边界层受到的扰动明显增大, 在突起物后方很快发展为湍流; 风洞噪声对本文研究圆台引起的边界层扰动有一定影响, 实验获得的边界层转捩位置要比数值结果靠前. 基于NPLS流场图像, 采用间歇性方法分析了圆台突起物后方边界层的特性, 对于高度大于边界层厚度的圆台其间歇性曲线较为接近并且更加饱满, 边界层的脉动也更为强烈.     

Structural and magnetic properties of RF sputtered FePt/Fe multilayers

Series of [FePt(4min)/Fe(t_Fe)]₁₀ multilayers have been prepared by RF magnetron sputtering and post-annealing in order to optimize their magnetic properties by structural designs. The structure, surface morphology, composition and magnetic properties of the deposited films have been characterized by X-ray diffractometer (XRD), Rutherford backscattering (RBS), scanning electron microscope (SEM), energy dispersive X-ray spectroscope (EDX) and vibrating sample magnetometer (VSM). It is found that after annealing at temperatures above 500 °C, FePt phase undergoes a phase transition from disordered FCC to ordered FCT structure, and becomes a hard magnetic phase. X-ray diffraction studies on the series of [FePt/Fe]_n multilayer with varying Fe layer thickness annealed at 500 and 600 °C show that lattice constants change with Fe layer thickness and annealing temperature. Both lattice constants a and c are smaller than those of standard ones, and lattice constant a decreases as Fe layer deposition time increases. Only a slight increase in grain size was observed as Fe layer decreased in samples annealed at 500 °C. However, the increase in grain size is large in samples annealed at 600 °C. The coercivities of [FePt/Fe]_n multilayers decrease with Fe layer deposition time, and the energy product (BH)_max reaches a maximum in the samples with Fe layer deposition time of 3 min. Comparison of magnetic properties with structure showed an almost linear relationship between the lattice constant a and the coercivities of the FePt phase.     

The improvement of pyroelectric properties of PZT thick films on Si substrate by TiOx barrier layer

The effects of TiO_x diffusion barrier layer thickness on the microstructure and pyroelectric characteristics of PZT thick films were studied in this paper. The TiO_x layer was prepared by thermal oxidation of Ti thin film in air and the PZT thick films were fabricated by electrophoresis deposition method (EPD). To demonstrate the barrier effect of TiO_x layer, the electrode/substrate interface and Si content in PZT thick films were characterized by scanning electron microscope (SEM) and X-ray energy dispersive spectroscopy (EDS), respectively. The TiO_x barrier thickness shows significant influence on the bottom electrode and the pyroelectric performance of the PZT thick films. The average pyroelectric coefficient of PZT films deposited on 400 nm TiO_x layer was about 8.94 × 10⁻⁹ C/(cm² K), which was improved by 70% than those without diffusion barrier layer. The results showed in this study indicate that TiO_x barrier layer has great potential in fabrication of PZT pyroelectric device.     

Effect of thickness and porous structure of SiC layers on the spectral response of the Pd/SiC-pSi Schottky photodiodes

In this work, we study the effect of the thickness and porous structure of silicon carbide (PSC) layers on the electrical properties of Schottky photodiodes by using a palladium (Pd) layer deposited on non-porous silicon carbide (SiC) and porous-SiC (PSC) layers. The non-porous and porous-SiC layers were realized on a p-type silicon (Si(1 0 0)) substrate by pulsed laser deposition using a KrF laser (248 nm) and thermal deposition of a thin Pd layer. The porous structure of the SiC layer deposited was developed by an electrochemical (anodization) method. The electrical measurements were made at room temperature (295 K) in an air ambience. The effect of the porous surface structure and the thickness of the SiC layer were investigated by evaluating electrical parameters such as the ideality factor (n) and barrier height (?_Bp). The thickness of the porous layer significantly affects the electrical properties of the Schottky photodiodes. Analysis of current-voltage (I-V) characteristics showed that the forward current might be described by a classical thermal emission theory. The ideality factor determined by the I-V characteristics was found to be dependent on the SiC thickness a value For a thin SiC layer (0.16 μm) n was around 1.325 with a barrier height 0.798 eV, while for a thick layer (1.6 μm), n and ?_Bp were 1.026 and 0.890 eV, respectively for Pd/SiC-pSi. These results indicate Schottky photodiodes with high performance are obtained for thicker SiC layer and for thin layer of PSC. This effect showed the uniformity of the SiC layer. In the same case the ideality factor (n) decreases for Pd/PSC-pSi(1 0 0) for low SiC thickness by report of Pd/PSC-pSi(1 0 0) Schottky photodiodes, but for Pd/PSC-pSi(1 0 0) n increase for large SiC thickness layer. We notice that the barrier height (?_Bp) was reversely depend by report of ideality factor. A spectral response value of (SR) of 34 mA/W at λ = 400 nm was measured for Pd/0.16 μm SiC-pSi Schottky photodiode with low SiC thickness. On the other hand, a value of SR = 0.14 mA/W at λ = 900 nm was obtained when we used PSC layer (Pd/PSC-pSi(1 0 0)). A reverse behaviour occurs for thicker SiC layer. Finally, it was found that the thickness and surface porous structure have strong effect on sensitivity.     

Characterization of silane layers on modified stainless steel surfaces and related stainless steel-plastic hybrids

The aim of this work was to characterize silane layers on the modified stainless steel surfaces and relate it to the adhesion in the injection-molded thermoplastic urethane-stainless steel hybrids. The silane layers were characterized with scanning electron microscope and transmission electron microscope, allowing the direct quantization of silane layer thickness and its variation. The surface topographies were characterized with atomic force microscope and chemical analyses were performed with X-ray photoelectron spectroscopy. The mechanical strength of the respective stainless steel-thermoplastic urethane hybrids was determined by peel test. Polishing and oxidation treatment of the steel surface improved the silane layer uniformity compared to the industrially pickled surface and increased the adhesion strength of the hybrids, resulting mainly cohesive failure in TPU. XPS analysis indicated that the improved silane bonding to the modified steel surface was due to clean Fe₂O₃-type surface oxide and stronger interaction with TPU was due to more amino species on the silane layer surface compared to the cleaned, industrially pickled surface. Silane layer thickness affected failure type of the hybrids, with a thick silane layer the hybrids failed mainly in the silane layer and with a thinner layer cohesively in plastic.     

Low-temperature oxidation of CoCu films with long-term irradiation by oxygen ion beams

The surface and surface layers of Co_xCu_100?x inhomogeneous thin films irradiated by an oxygen ion beam for a long time (to 100 min) are studied. The films are obtained by electrolytic deposition. With X-ray photoelectron spectroscopy and conversion electron Mössbauer spectroscopy, it is shown that the irradiation leads to the formation of an oxidized surface layer. The continuity and thickness of the layer depend on the roughness of the initial film. For a cobalt content of 8≤x≤20 at. %, the oxide layer is continuous and nonuniform in thickness, the mean thickness being estimated at several tens of nanometers. The interface between the layer and the underlying film is sharp. The films irradiated are smoother than the asdeposited ones. The formation of the oxide layer is treated in terms of a qualitative model.     

Molecular systematics and ultrastructural characterization of a forgotten species: Chattonidium setense (Ciliophora,Heterotrichea)

In the present paper we redescribe the ciliate Chattonidium setense Villeneuve 1937 combining morphological observations (live, stained, scanning, and transmission electron microscope) with behavioral notes and molecular data. Ultrastructural analysis revealed remarkable similarities between Chattonidium and representative members of the class Heterotrichea in cortical structure and cytoplasmic organization. The most similar genus for these aspects appears to be Condylostoma. To verify this relatedness, 18S rRNA genes from Chattonidium and from one Condylostoma species were sequenced. Phylogenetic analysis indicates Chattonidium belongs to the class Heterotrichea defined according to the modern taxonomy, and confirms its relatedness with Condylostoma already hypothesized by Villeneuve-Brachon (1940). The presence of the aboral cavity complex, a unique feature never described in other ciliates, and its peculiar organization revealed by ultrastructural analysis fully justify, in our opinion, the maintenance of Chattonidium in the separate family Chattonidiidae, established by Villeneuve-Brachon in 1940.     

High-throughput concept for tailoring switchable mirrors

The optical properties, the switching kinetics and the lifetime of hydrogen switchable mirrors based on Mg-Ni alloys are determined with particular regard to the composition of the optically active metal-hydride layer in combination with the thickness of the catalytic capping layer. For this, a high-throughput experiment is introduced. The switching kinetics and the reversibility of switchable mirrors are strongly thickness dependent, though the details hinge on the fine structure of the clustered capping layer. Therefore, the kinetics is correlated with the surface structures of Pd on Mg_yNi_1−y as investigated by scanning tunneling microscopy. The results are explained by the so-called strong metal-support interaction (SMSI) state, characterized by a complete encapsulation of the capping layer clusters by oxidized species originating from the support. The SMSI-effect is less important with increasing Pd-layer thickness, and is suppressed by a good wetting of the Pd-clusters on the optically active film. This explains the critical thickness for the catalyzed hydrogen uptake observed in many switchable mirror systems. Moreover, the degradation of the kinetics during cycling is found to depend on the Pd-layer thickness and on the gas environment. Only films, covered with at least 15 nm Pd, show small degradation caused by the SMSI-effect. The SMSI-effect is partly reversible: after changing the gas environment from hydrogen to oxygen, the oxide on the Pd-clusters can be partly removed.     

The role of interdiffusion and spatial confinement in the formation of resonant raman spectra of Ge/Si(100) heterostructures with quantum-dot arrays

The phonon modes of self-assembled Ge/Si quantum dots grown by molecular-beam epitaxy in an apparatus integrated with a chamber of the scanning tunneling microscope into a single high-vacuum system are investigated using Raman spectroscopy. It is revealed that the Ge-Ge and Si-Ge vibrational modes are considerably enhanced upon excitation of excitons between the valence band Λ₃ and the conduction band Λ₁ (the E ₁ and E ₁ + Δ₁ transitions). This makes it possible to observe the Raman spectrum of very small amounts of germanium, such as one layer of quantum dots with a germanium layer thickness of ≈10 Å. The enhancement of these modes suggests a strong electron-phonon interaction of the vibrational modes with the E ₁ and E ₁ + Δ₁ excitons in the quantum dot. It is demonstrated that the frequency of the Ge-Ge mode decreases by 10 cm^?1 with a decrease in the thickness of the Ge layer from 10 to 6 Å due to the spatial-confinement effect. The optimum thickness of the Ge layer for which the size dispersion of quantum dots is minimum is determined.     

Effect of film morphology on the magnetic properties for Nd-Fe-B thin films

The microstructure and magnetic properties of Nd-Fe-B thin films with a particulate structure were investigated. The nominal thickness of the Nd-Fe-B layer (t_N) was varied from 2 to 50 nm on a (0 0 1) Mo buffer layer. The films were grown with their c-axis perpendicular to the plane, and the morphology of the film with t_N=2 nm was shown to be particulate from an atomic force microscope image. The slope of the initial magnetization curve became steeper by increasing the t_N value in the initial magnetization curve, indicating that the film morphology composed of single domain particles changed to that of multi-domain particles with growth. The film with t_N=8 nm, which had a structure consisting of a mixture of single and multiple domain particles, showed the maximum value of the coercivity measured in the direction perpendicular to the film plane (H_c) as 19.5 kOe.     

Magnetic and structural properties of FeX/Tb15 Å multilayers

Magnetic domains in Fe/Tb sputter-deposited multilayer films are studied magneto-optically using a Kerr microscope. These observations together with other experimental measurements (vibrating sample- and torque magnetometry) showed the important role of the iron-layer thickness d_Fe on the magnetic properties of the films. At certain combinations of the layer thicknesses both perpendicular and in-plane anisotropies are present in the film. The structural investigations indicate that a gradual increase of the iron-layer thickness d_Fe leads to a phase transition of iron from amorphous to crystalline at certain thicknesses of the iron layer, which is also reflected in the magnetic behavior of the films. The differences between the magnetic properties of the investigated multilayered Fe/Tb films and those of amorphous FeTb films are discussed as well.     

One-way absorption properties in asymmetric single-negative-based Cantor photonic crystals

In this work we theoretically study the one-way optical properties in asymmetric triadic-Cantor-set (TCS) photonic crystals (PCs), air/TCSN/G/TCSM/air, where TCSN is the stage N TCS composed of a lossy epsilon-negative (ENG) material and a lossy mu-negative (MNG) material. In addition, the defect layer G is a dielectric. Our results show that the absorption spectra are different in forward and backward propagation. Specially, it is first discovered that the one-way properties will disappear if the layer thicknesses are large. Besides, the layer thickness limit is smaller when the TCS stage is larger. Additionally, comparing with previous studies, we find that the type of interaction between the defect and non-defect modes is decided by the layer materials of the PC structure.     

Influence of argon ion bombardment on the formation of intermetallic compounds in the nickel-aluminum system

The formation of Ni _x Al _y intermetallic compounds in two-layer (Ni/Al) structures (nickel films deposited on aluminum substrates in vacuum) under bombardment by Ar⁺ ions has been studied experimentally. The method based on Rutherford backscattering of He⁺ ions is used to demonstrate that argon ion bombardment causes the formation of intermetallic compounds in the near-surface layer. The thickness of the intermetallic layer formed in the near-surface region substantially exceeds the projective ion path. The composition and thickness of the intermetallic layer depend mainly on the implantation dose and the substrate temperature, rather than on the ion current density. In the intermetallic layer, the content of nickel increases with increasing temperature. It has been established that, in the absence of bombardment, intermetallic phases are not observed at temperatures lower than T = 400°C and that, in the presence of bombardment, the Ni₃Al intermetallic layer arises at a temperature of 320°C.     

Molecular dynamics simulation of deposition and etching of Si bombarding by energetic SiF

In this study, SiF interaction with amorphous Si surface at normal incidence was investigated using molecular dynamics simulation at 300 and 600 K. The incident energies of 50, 100 and 200 eV were used. The results show that the deposition rate is not sensitive to the incident energy, while with increasing the surface temperature, the deposition rate decreases. The etch yield is sensitive to the incident energy and the surface temperature. The etch yield increases with increasing incident energy and temperature. After bombarding, a Si_xF_y interfacial layer is formed. The interfacial layer thickness increases with increasing incident energy mainly through enhanced penetration of the silicon lattice. In the interfacial layer, for SiF_x (x = 1-3) species, SiF is dominant and only little SiF₃ is present. At the outmost and innermost of the interfacial layer, SiF species is dominant. Most of SiF₃ species is concentrated above the initial surface.     

Ultrastructural observation on genesis and morphology of cortical granules in Macrobrachium nipponense (Crustacea,Caridea)

Cortical granules are secretory vesicles in oocytes that develop from the Golgi complex. In the freshwater shrimp, Macrobrachium nipponense, mitochondria participates in the formation of cortical granules. We investigated the structural changes of mitochondria and the distribution cortical granules in different stages of oocyte development. Transmission electron microscopy provided evidence for the involvement of mitochondria and a particular spiral lamellar organization and an electron-lucent area in internal cortical granules. The ooplasm provided material for the cortical granules in early oocyte development. We demonstrated that mitochondria play a role in coalescence and maturation of cortical granules in this species. Additionally, a concept of cortical granules regarded as a functional integration is put forward. The genesis of shrimp cortical granules exhibited a particular pathway of maturation. The outer shape and inner organization considering different taxa suggested general as well as specific features of the development of cortical granules.     

Thin graphite overlayers: Graphene and alkali metal intercalation

Using LEED and angle resolved photoemission for characterisation we have prepared graphite overlayers with down to monolayer thickness by heating SiC crystals and monitored alkali metal intercalation for the multilayer films. The valence band structure of the monolayer is similar to that calculated for graphene though downshifted by around 0.8 eV and with a small gap at the zone corner. The shift suggests that the transport properties, which are of much present interest, are similar to that of a biased graphene sample. Upon alkali metal deposition the 3D character of the π states is lost and the resulting band structure becomes graphene like. A comparison with data obtained for ex situ prepared intercalation compounds indicates that the graphite film has converted to the stage 1 compounds C₈K or C₈Rb. Advantages with the present preparation method is that the graphite film can be recovered by desorbing small amounts of alkali metal and that the progress of compound formation can be monitored. The energy shifts measured after different deposits indicate that saturation is reached in three steps. Our interpretation is that in the first the alkali atoms are dispersed while the final steps are characterized by the formation of first one and then a second (2 × 2) ordered alkali metal layer adjacent to the uppermost carbon layer.     

Dielectric multilayer nanostructures of tantalum and aluminum oxides

This paper reports on the experimental results of investigations into the mechanism of formation and dielectric characteristics of multilayer nanostructures prepared through the molecular layer-by-layer growth of tantalum and aluminum oxides. It is demonstrated that the permittivity of the multilayer nanostructures varies almost linearly with a change in the content of the components. The electrical conductivity depends on the ratio between the Al₂O₃ layer thickness d_i and the Ta₂O₅ layer thickness d_j. For a layer thickness d_i (d_j)<5 nm, the tunneling phenomena contribute significantly to the permittivity and conductivity of these nanostructures.