Organic field-effect transistors(OFETs) refer to field-effect transistors that use organic semiconductors as channel materials. Owing to the advantages of organic materials such as solution processability and intrinsic flexibility, OFETs are expected to be applicable in emergent technologies including wearable electronics and sensors, flexible displays, internet-of-things, neuromorphic computing, etc. Improving the electrical performance and developing multifunctionalities of OFETs are two major... 相似文献
Photoresponsive OFETs were fabricated based on a tri-component active layer (NDI2OD-DTYM2, spiropyran and polystyrene). The results demonstrated that these OFETs displayed photoresponsive feature to alternate UV and vis light due to the photoisomerization of spiropyran between the closed-ring state and ionic open-ring state. 相似文献
The fusion of heteroaromatic rings into ladder‐type heteroarenes can stabilize frontier molecular orbitals and lead to improved physicochemical properties that are beneficial for applications in various optoelectronic devices. Thus, ladder‐type heteroarenes, which feature highly planar backbones and well‐delocalized π conjugation, have recently emerged as a promising type of organic semiconductor with excellent device performance in organic photovoltaics (OPVs) and organic field‐effect transistors (OFETs). In this Focus Review, we summarize the recent advances in ladder‐type heteroarene‐based organic semiconductors, such as hole‐ and electron‐transporting molecular semiconductors, and fully ladder‐type conjugated polymers towards their applications in OPVs and OFETs. The recent use of ladder‐type small‐molecule acceptor materials has strikingly boosted the power conversion efficiency of fullerene‐free solar cells, and selected examples of the latest developments in ladder‐type fused‐ring electron acceptor materials are also elaborated. 相似文献
Two‐dimensional (2D) crystals of organic semiconductors (2DCOS) have attracted attention for large‐area and low‐cost flexible optoelectronics. However, growing large 2DCOS in controllable ways and transferring them onto technologically important substrates, remain key challenges. Herein we report a facile, general, and effective method to grow 2DCOS up to centimeter size which can be transferred to any substrate efficiently. The method named “solution epitaxy” involves two steps. The first is to self‐assemble micrometer‐sized 2DCOS on water surface. The second is epitaxial growth of them into millimeter or centimeter sized 2DCOS with thickness of several molecular layers. The general applicability of this method for the growth of 2DCOS is demonstrated by nine organic semiconductors with different molecular structures. Organic field‐effect transistors (OFETs) based on the 2DCOS demonstrated high performance, confirming the high quality of the 2DCOS. 相似文献
Monolayer organic field-effect transistors(OFETs) are attracting worldwide interest in device physics and novel applications due to their ultrathin active layer for two-dimensional charge transport. The monolayer films are generally prepared by thermal evaporation, the Langmuir technique or self-assembly process, etc., but their electrical performance is relatively lower than corresponding thick films. From 2011, the performance of monolayer OFETs has been boosted by using the monolayer molecular crystals(MMCs) as active channels, which opened up a new era for monolayer OFETs. In this review, recent progress of monolayer OFETs, including the preparation of monolayer films, their OFET performance and applications are summarized.Finally, perspectives of monolayer OFETs in the near future are also discussed. 相似文献
The crystallinity of an organic semiconductor film determines the efficiency of charge transport in electronic devices. This report presents a micro‐to‐nanoscale investigation on the crystal growth of fluorinated 5,11‐bis(triethylgermylethynyl)anthradithiophene (diF‐TEG‐ADT) and its implication for the electrical behavior of organic field‐effect transistors (OFETs). diF‐TEG‐ADT exhibits remarkable self‐assembly through spin‐cast preparation, with highly aligned edge‐on stacking creating a fast hole‐conducting channel for OFETs. 相似文献
The progress of organic field-effect transistors (OFETs) has led to the advent of a new area of printed and/or flexible electronics. In organic transistors and circuits, the interface between a gate insulator (GI) and an organic semiconductor (OS) plays a critical role on the electrical performance together with the functionality, the reliability and the long-term stability. In this review, we describe the basic principles of engineering a variety of the GI/OS interfaces for the development of advanced OFETs from the framework of the surface morphology and the physico-chemical surface interactions. We also discuss the dielectric interface modification and the resultant device performance of the OFETs. 相似文献
The electrical memory characteristics of the n‐channel organic field‐effect transistors (OFETs) employing diverse polyimide (PI) electrets are reported. The synthesized PIs comprise identical electron donor and three different building blocks with gradually increasing electron‐accepting ability. The distinct charge‐transfer capabilities of these PIs result in varied type of memory behaviors from the write‐one‐read‐many (WORM) to flash type. Finally, a prominent flexible WORM‐type transistor memory is demonstrated and shows not only promising write‐many‐read‐many (WMRM) multilevel data storage but also excellent mechanical and retention stability.