共查询到20条相似文献,搜索用时 93 毫秒
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为增强晶体硅太阳电池的光利用率, 提高光电转换效率, 研究了硅纳米线阵列的光学散射性质. 运用严格耦合波理论对硅纳米线阵列在310—1127 nm波段的反射率进行了模拟计算, 用田口方法对硅纳米线阵列的表面传输效率进行了优化. 结果表明, 当硅纳米线阵列的周期为50 nm, 占空比为0.6, 高度约1000 nm时减反射效果最佳; 该结构在上述波段的平均反射率约为2%, 且在较大入射角度范围保持不变. 采用金属催化化学腐蚀法, 于室温、室压条件下在单晶硅表面制备周期为60 nm,占空比为0.53, 高度为500 nm的硅纳米线阵列结构, 其反射率的实验测试结果与计算模拟值相符, 在上述波段的平均反射率为4%—5%, 相对于单晶硅35%左右的反射率, 减反射效果明显. 这种减反射微结构能够在降低太阳电池成本的同时有效减小单晶硅表面的光反射损失, 提高光电转换效率. 相似文献
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闫红丹 Peter Lemmens Johannes Ahrens Martin Broring Sven Burger Winfried Daum Sandra Korte Aidin Lak 《物理学报》2012,61(23):422-427
利用电化学沉积法在阳极氧化铝模板中制备了高长径比(20—100)金纳米线阵列,并用扫描俄歇电子显微镜对其结构进行了表征.紫外可见吸收光谱显示金纳米线的表面等离子共振包含横向吸收峰(transverse mode)和纵向吸收峰(longitudinal mode),具有很强的各向异性特征.纵向吸收峰的强度与入射光的偏振方向和入射角度有关,随着长径比的增加纵向吸收峰位置向高能方向移动.将纳米线之间的表面等离子体能量耦合与分子H聚合体的吸收光谱行为做了比较,认为相邻纳米线间的多重耦合使纵向吸收峰出现蓝移.利用有限元分析法模拟了电场在纳米线阵列和单根纳米线表面的不同分布. 相似文献
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碱溶液修饰硅纳米线阵列绒面 总被引:1,自引:0,他引:1
提出用碱溶液修饰硅纳米线阵列制作太阳能绒面的方法。实验中首先采用金属催化化学腐蚀法在Si(100)基底上制备了定向排列的硅纳米线阵列,然后将纳米线阵列浸入碱溶液中进行修饰,修饰时间分别为10,30,50,60,90s。通过扫描电子显微镜(SEM)对硅纳米线阵列进行形貌分析,采用太阳能测试系统附带的积分球测量纳米线阵列绒面结构的反射光谱。通过测量和分析发现硅纳线阵列在碱溶液中修饰30s时表面分布均匀,在400~1000nm波段的综合反射率低于4%。结果表明碱溶液修饰纳米线阵列的方法能够有效分散束状硅纳米线阵列,明显降低绒面的反射率,并且初步分析了碱溶液修饰硅纳米线阵列的分散机理。 相似文献
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本文以硅烷(SiH4)为反应气体,利用等离子体化学气相沉积(PECVD)方法在硅(100)衬底上生长硅纳米晶体、纳米线。应用扫描电镜观察不同条件下生长的样品表面,发现衬底条件对硅纳米结构的影响十分显著。在温度、压强等其它条件相同的情况下,对硅衬底应用Fe^3+催化剂处理后,呈纳米线状结构生长,而无Fe催化剂涂覆情况下,基本呈纳米晶体状生长,说明催化剂对si纳米线的生成起了重要的促进生长作用。通过进一步研究硅纳米晶体、纳米线的等离子增强化学气相生长机理,发现它们以气-液-固(VLS)机制生长。 相似文献
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采用二次阳极氧化法,制备了多孔氧化铝模板。在真空背景下,用脉冲激光沉积法,在多孔氧化铝模板上沉积一层硅,制成了硅与多孔氧化铝的复合膜,然后用盐酸将多孔氧化铝模板完全腐蚀掉,制备均匀分布着硅纳米线的硅膜。用扫描电子显微镜、X射线衍射、光致发光对纳米硅的结构和光学性质进行了测试分析。结果表明:硅纳米线的直径约为67.5nm,长度约为100nm,数密度约1011/cm2。光致发光谱是可见光范围内的一个宽发射峰,上面叠加了许多具有精细结构的尖峰,尖峰之间的波长间隔不相等,但能量间隔相等。分析了样品的结构特点,利用量子限制模型和表面发光中心模型对光谱进行了解释,提出了一个新的能级模型,求出了各个尖峰对应激发态能级的量子数。为探讨纳米硅的发光机制和实现硅发光器件的制备提供了实验依据。 相似文献
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The metal-assisted chemical etching of silicon in an aqueous solution of hydrofluoric acid and hydrogen peroxide is established for the fabrication of large area, uniform silicon nanowire (SiNW) arrays. In this study, silver (Ag) and gold (Au) are considered as catalysts and the effect of different catalysts with various thicknesses on the structural and optical properties of the fabricated SiNWs is investigated. The morphology of deposited catalysts on the silicon wafer is characterized by atomic force microscopy (AFM) and field emission scanning electron microscopy (FESEM). It is shown that the morphology of the fabricated silicon nanostructures remarkably depends upon the catalyst layer thickness, and the catalyst etching time directly affects the structural and optical properties of the synthesized SiNWs. FESEM images show a linear increment of the nanowire length versus time, whereas the etching rate for the Au-etched SiNWs was lower than the Ag-etched ones. Strong light scattering in SiNWs caused the total reflection to decrease in the range of visible light, and this decrement was higher for the Ag-etched SiNW sample, with a longer length than the Au-etched one. A broadband visible photoluminescence (PL) with different peak positions is observed for the Au- and Ag-etched samples. The synthesized optically active SiNWs can be considered as a promising candidate for a new generation of nano-scale opto-electronic devices. 相似文献
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In this work we study the optical properties of hydrogen-passivated, free-standing silicon and germanium nanowires, oriented along the [1 0 0], [1 1 0], [1 1 1] directions with diameters up to about 1.5 nm, using ab-initio techniques. In particular, we show how the electronic gap depends on wire’s size and orientation; such behaviour has been described in terms of quantum confinement and anisotropy effects, related to the quasi one-dimensionality of nanowires. The optical properties are analyzed taking into account different approximations: in particular, we show how the many-body effects, namely self-energy, local field and excitonic effects, strongly modify the single particle spectra. Further, we describe the differences in the optical spectra of silicon and germanium nanowires along the [1 0 0] direction, as due to the different band structures of the corresponding bulk compounds. 相似文献
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利用基于密度泛函理论的第一性原理,对不同直径和浓度Ni掺杂硅纳米线的形成能、能带结构、态密度和光学性质进行了计算,结果表明:杂质Ni的形成能随硅纳米线直径的减小和掺杂浓度的降低而下降,这说明直径越大的硅纳米线掺杂越困难,杂质浓度越高的硅纳米线越不稳定. Ni掺杂在费米能级附近及带隙中引入杂质能级,其主要来自Ni的3d轨道,杂质能级扩展成杂质带,改变Ni的掺杂浓度可改变硅纳米线的带隙,改善其导电性. 另外,还发现掺杂浓度明显改变了硅纳米线的吸收强度和宽度. 相似文献
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A. Colli S. Hofmann A. Fasoli A.C. Ferrari C. Ducati R.E. Dunin-Borkowski J. Robertson 《Applied Physics A: Materials Science & Processing》2006,85(3):247-253
We review our recent results on the growth and characterization of silicon nanowires (SiNWs). Vapour-phase deposition techniques are considered, including chemical vapour deposition (CVD), plasma-enhanced chemical vapour deposition (PECVD), high-temperature annealing, and thermal evaporation. We present complementary approaches to SiNW production. We investigate the low-temperature (down to 300 °C) selective nucleation of SiNWs by Au-catalysed CVD and PECVD. Bulk production of SiNWs is obtained by thermal-vapour deposition from Si/SiO powders in a high-temperature furnace. In this case, SiNWs grow either by condensing on Au catalyst films, or by self-condensation of the vapour in a lower-temperature region of the furnace. Finally, we also achieve controlled growth by thermolysis of nanopatterned, multi-layered Si/Au thin-film precursors. The as-produced wires are compared in terms of yield, structural quality, and optical properties. Raman and photoluminescence spectra of SiNWs are discussed. PACS 81.15.Gh; 73.21.-b; 73.21.Hb; 71.20.Mq; 78.30.-j 相似文献
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Free‐standing ternary InGaAs nanowires (NW) are at the core of intense investigations due to their integration capabilities on silicon (Si) for next‐generation photovoltaics, integrated photonics, tunneling devices, and high‐performance gate all‐round III–V/Si NW transistors. In this review, recent progress on the growth, structural, optical and electrical properties of InGaAs NWs on Si substrate is highlighted. Particular focus is on a comparison between conventional catalyst‐assisted and catalyst‐free growth methods as well as self‐assembled versus site‐selectively grown NW arrays. It will be shown that catalyst‐free, high‐periodicity NW arrays with extremely high compositional uniformity are mandatory to allow un‐ambiguous structure–property correlation measurements. Here, interesting insights into the electronic/optical properties of wurtzite, zincblende and mixed crystal phases of InGaAs will be highlighted based on recent photoluminescence spectroscopy data. Finally, the InGaAs NW‐on‐Si system is also discussed in the realms of heterojunction properties, providing a promising system for steep‐slope tunneling field effect transistors in future low‐power post‐CMOS intergrated microelectronics and broad‐band photoabsorption and detec‐tion devices. (© 2014 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim) 相似文献
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Novel structures and properties of gold nanowires 总被引:8,自引:0,他引:8
The structures of free-standing gold nanowires are studied by using molecular-dynamics-based genetic algorithm simulations. Helical and multiwalled cylindrical structures are found for the thinner nanowires, while bulk-like fcc structures eventually form in the thicker nanowires up to 3 nm in diameter. This noncrystalline-crystalline transition starts from the core region of nanowires. The vibrational, electronic, and transport properties of nanowires are investigated based on the optimal structures. Bulklike behaviors are found for the vibrational and electronic properties of the nanowires with fcc crystalline structure. The conductance of nanowires generally increases with wire diameter and depends on the wire structure. 相似文献
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V. Rodrigues D. Ugarte 《The European Physical Journal D - Atomic, Molecular, Optical and Plasma Physics》2001,16(1):395-398
We have used high resolution transmission electron microscopy to determine the structure of gold nanowires generated by mechanical
stretching. Just before rupture, the contacts adopt only three possible atomic configurations, whose occurrence probabilities
and quantized conductance were subsequently estimated. These predictions have shown a remarkable agreement with conductance
measurements from a break junction operating in ultra-high-vacuum, corroborating the derived correlation between nanowire
atomic structure and conductance behavior.
Received 28 November 2000 相似文献
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We investigate the structural, electronic, and optical properties of hydrogen-passivated silicon nanowires along [110] and [111] directions with diameter d up to 4.2 nm from first principles. The size and orientation dependence of the band gap is investigated and the local-density gap is corrected with the GW approximation. Quantum confinement becomes significant for d<2.2 nm, where the dielectric function exhibits strong anisotropy and new low-energy absorption peaks start to appear in the imaginary part of the dielectric function for polarization along the wire axis. 相似文献
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Dae Hoon KwonHyeun Hwan An Hee-Soo KimJong Ho Lee Sang Hee SuhYoung Ho Kim Chong Seung Yoon 《Applied Surface Science》2011,257(10):4650-4654
Si nanowires (SiNWs) were modified by Au nanoparticles (AuNPs) using a self-assembled monolayer of aminopropyltriethoxysilane (APTES) and used for direct sensing of the bovine serum albumin (BSA). It was shown that repeated thermal treatment of the sensor greatly enhanced the reliability of the SiNW sensor by increasing the electrical conductivity largely from carbonization of the APTES molecules and from bringing the AuNPs in intimate contact with the SiNW surface. The AuNP-modified SiNW array sensor was able to detect 1-7 μM of BSA. The sensor exhibited a good sensitivity over the tested concentration range and linear behavior. It is expected that the proposed label-free biosensor can be further developed to selectively detect and quantify biomolecules other than BSA. 相似文献