Temperature dependence of the elastic modulus of crystalline regions of isotactic poly(4-methyl-1-pentene)

The elastic modulus E ₁ of crystalline regions of isotactic poly(4-methyl-1-pentene) (P4M1P) in the direction parallel to the chain axis and its temperature dependence were investigated by x-ray diffraction. E ₁ values for the (001) and (007) planes of P4M1P agreed well at 4.1 GPa at room temperature. This small E value could be attributed both to the contracted helical conformation (7/2 helix) and to a large cross-sectional area of P4M1P in the crystalline regions. Though the lattice distortion of the first kind increased and partial destruction of crystallites occurred with increasing stress, the stress-strain curve for the crystal lattice was linear up to 80 MPa. However, the E₁ value remained unchanged up to 150°C. The lattice spacing for the (007) plane increased monotonously with increasing temperature, with a thermal expansion coefficient of 0.9 × 10^?4 K^?1. These phenomena were in contrast with the temperature dependence of E ₁ values of various polymers previously reported, in which E ₁ decreased in the temperature region where the thermal expansion coefficient changed. It is considered for P4M1P that the axail thermal molecular mitions which cause the decrement of E₁ do not take place and that the deformation mechanism of the chain molecules remains unchnaged in the crystalline regions over the temperature and stress range studied.     

Small angle neutron scattering study of two nonionic surfactants in water micellar solutions

Two classic nonionic surfactants — C₁₄E₇ (heptaethylene glycol monotetradecyl ether) and C₁₀E₇ (heptaethylene glycol monodecyl ether) were investigated in heavy water solution for concentration c = 0.17% (dilute regime) at different temperatures in the range t = 10–35°C by small angle neutron scattering (SANS) method. In the case of C₁₄E₇ surfactant — for all temperatures at c = 0.17% there are two axial ellipsoidal micelles with longer axis 15 nm at 10°C and 49.5 nm at 35°C in investigated solutions. For C₁₀E₇ surfactant at the same concentration of solution and temperature — two axial ellipsoidal micelles were observed, too. The longer axis is equal to 7.5 nm at 10°C, 9 nm at 20°C and at 35°C this axis is equal to 12 nm. Micelles of C₁₀E₇ nonionic surfactant are smaller than those of C₁₄E₇ surfactant in the same experimental conditions.      

Temperature dependence of spin-hamiltonian parameters for chromium doped rutile

The temperature dependence of the spin-Hamiltonian parameters for substitutional Cr³⁺-ions in single crystal rutile (TiO₂) has been studied. The measurements were performed at about 9·2 GHz and 35 GHz on a fine powder of single crystalline Cr-TiO₂ for three temperatures, 95, 200, and 295°K. It was found that the spin-Hamiltonian parameter D diminishes with decreasing temperature in the temperature interval studied. The behaviour of g and E is more complex. A tentative extrapolation of the data towards 0°K has been made.     

Dielectric dispersion and its temperature variation in calcite single crystals

The variation of dielectric constant and loss of calcite single crystals with frequency and temperature over wide ranges (10² to 2.4×10¹⁰c/s and ?193 to 450 °C) in two orientations of the crystal, namely, the electric field (i) parallel to the optic axis and (ii) perpendicular to the optic axis, has been studied and the results reported. The dielectric constant at 25 °C in both orientations (E‖, 7.8 andE⊥, 8.2) is frequency-independent. The dielectric loss shows a minimum in the 10⁵ to 10⁸ c/s region. Dielectric constant as a function of temperature exhibits two distinct regions: frequency-independent (?193 to 50 °C) and frequency-dependent (50 to 450 °C). The temperature variation of specific conductivity can be represented by a sum of two exponentials, e.g., \(\sigma = Ae^{ - E_1 /kT} + Be^{ - E_2 /kT}\) with the usual notation; the constants have different values in the two orientations. The intrinsic conductivity with larger activation energy (E‖ 0.91 eV andE⊥ 1.05 eV) is attributed to the movement of lattice vacancies in the crystal. The 15% larger value for the intrinsic activation energy alongE⊥ optic axis over the other orientation may be due to a probably large electrostatic interaction between the charge carriers and the lattice ions in this orientation.     

Temperature dependence of the Raman spectra of Bi2Te3 and Bi0.5Sb1.5Te3 thermoelectric films

The temperature dependence of the Raman spectra of Bi₂Te₃ and Bi_0.5Sb_1.5Te₃ thermoelectric films was investigated. The temperature coefficients of the E_g(2) peak positions were determined as –0.0137 cm^–1/°C and –0.0156 cm^–1/°C, respectively. The thermal expansion of the crystal caused a linear shift of the Raman peak induced by the temperature change. Based on the linear relation, a reliable and noninvasive micro‐Raman scattering method was shown to measure the thermal conductivity of the thermoelectric films. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Electrocaloric effect in antiferroelectric PbZrO3 thin films

Antiferroelectric PbZrO₃ thin films have been deposited on Pt(111)/Ti/SiO₂/Si substrate by polymer modified sol–gel route. Temperature dependent P –E hysteresis loops have been measured at 51 MV/m within a temperature range of 40 °C to 330 °C. The maximum electrocaloric effect ～0.224 × 10^–6 K mV^–1 has been observed near the dielectric phase transition temperature (235 °C) of the thin films. The electrocaloric effect and its strong temperature dependence have been attributed to nearly first‐order phase transition. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Dechanneling of MeV protons in tungsten

Abstract

A systematic investigation of the dechanneling of protons in tungsten has been completed for the <111> axial direction and also for the (110) plane. Measurements at room temperature have been made at energies of 0.5, 2.0, 3.5, 8.0 and 12.0 MeV; at 2.0 MeV, the effect of target temperature has been investigated over the range 77–873°K. In the axial case, the dechanneling rate increases strongly with the vibrational amplitude _ρ, but not as strongly as the ρ² dependence reported by the Catania group (Refs. 4–7) for silicon and germanium. Also, unlike silicon and germanium, the tungsten axial data exhibit practically no energy dependence and so cannot be fitted by the zρ²/E scaling parameter suggested by the Catania group. On the other hand, the planar dechanneling data in tungsten exhibit the predicted (E ^?1)dependence and relatively littie temperature dependence, in good agreement with previous work.     

Temperature and frequency dependent electrical properties of 50 MeV Li3+ ion irradiated polymeric blends

The polymeric blends of polyvinyl chloride (PVC) and polyethylene terephthalate (PET) with equal composition by weight have been irradiated with 50 MeV Li³⁺ ions at different fluences. The AC electrical properties of polymeric blends were measured in the frequency range 0.05–100 kHz, and at temperature range 40–150 ^°C using LCR meter. There is an exponential increase in conductivity with log of frequency and effect is significant at higher fluences. The value of tan δ and dielectric constant are observed to change appreciably due to irradiation. The loss factor (tan δ) versus frequency plot suggests that the capacitors of polymeric blend of PVC and PET may be useful below 10 kHz. No change in dielectric constant was observed over a wide temperature range up to 150 ^°C. Thermal stability was studied by thermogravimetric analysis. Thermal analysis revealed that chain scission is the dominant phenomena in the polymeric blends resulting in the reduction of its thermal stability. It appears from differential scanning calorimetry studies that the melting temperature decreases as fluence increases. FTIR spectra measurements also revealed that the material suffered severe degradation through bond breaking beyond the fluence of 2.3×10¹³ ions/cm².     

Kinetics of the nanocrystalline structure formation

The kinetics of the nanocrystalline structure formation in the Fe_73.5Cu₁Nb₃Si_22.5?xB_x (x=6. 7. 8. 9 at. %) was followed during the annealing runs interrupted between 300 and 700°C.⁵⁷Fe room temperature Mössbauer spectra were taken and complemented by the electrical resistivity and X-Ray diffraction measurements. It has been found that for the 50 K/min temperature increase the formation of the nanocrystalline phase begins above 450°C reaching a maximum around 500°C and is followed by the second stage of crystallization of the disordered intergranular remainder above ca 600°C accompanied by the changes in the occupation of the iron sites in the crystalline α?Fe?Si phase. Thus gained composition-temperature dependence seems to witness for the inhibiting influence of the substitution of B by Si on the crystallization process.     

Magnetoelectricity in the PbFe1/2Nb1/2O3 Ceramics

The magnetodielectric effect (the influence of a magnetic field H on the dielectric constant ?) and the magnetoelectric effect (the influence of an electric field E on the magnetoelectric constant ??) of the PbFe_1/2Nb_1/2O₃ ceramics have been investigated at temperatures T in the range from 50 to 200°C, including the Curie point T _C ? 98°C. It has been demonstrated that there is a correlation of these effects with the shift of the ferroelectric-paraelectric phase transition temperature in a magnetic field.     

Messung der Magnetostriktionskonstanten des Kobalts als Funktion der Temperatur

The single crystal magnetostriction constants of hexagonal cobalt are measured between ?200 °C and 400 °C in magnetic fields up to 26 kOe. The shear constant λ_E=2 λ_D?λ_A/2?λ_C/2 which is of interest in connection with domain structures, as well as the volume constant λ_V=λ_A+ λ_B+ λ_C show a relatively strong temperature dependance, which cannot be explained by present theories.     

Effect of the annealing temperature of thin Hf0.3Zr0.7O2 films on their energy storage behavior

With increasing annealing temperature (T_anneal), the magnitude of the electric fields for the antiferroelectric‐to‐ferro‐electric (E_AF) and ferroelectric‐to‐antiferroelectric (E_FA) transition of a 9.2 nm thick Hf_0.3Zr_0.7O₂ film decreased. The energy storage densities of the Hf_0.3Zr_0.7O₂ films crystallized at 400 °C, 500 °C, and 600 °C were as large as 42.2 J/cm³, 40.4 J/cm³, and 28.3 J/cm³, respectively, at the electric field of 4.35 MV/cm. The maximum dielectric constant of the Hf_0.3Zr_0.7O₂ film crystallized at 600 °C was the largest (～46) as it had the smallest E_AF and E_FA, whereas the leakage current density of the film crystallized at 400 °C was the smallest. The 400 °C of T_anneal was the optimum condition for energy storage application. (© 2014 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

Anomalous temperature dependence of conductivity and X-ray diffraction in CuxPb1−xBr2−x solid solution

The temperature dependence of the electrical impedance of Cu_xPb_1−xBr_2−x was measured. Both conductivity and relaxation time of ion migration at two temperature regions above and below 145 °C showed anomalous differences. Intensity measurements of X-ray diffraction were also carried out varying the temperature over the range from 30 to 200 °C. The integrated intensity for Bragg reflection abruptly decreased above 145 °C with increasing temperature. We obtained a mean square displacement of atoms, resulting from a Debye-Waller factor. It is therefore concluded that the anomalous temperature dependence of the conductivity above 145 °C is due to anharmonic vibration of the Cu atom. Paper presented at the 3rd Euroconference on Solid State Ionics, Teulada, Sardinia, Italy, Sept. 15–22, 1996     

Edge absorption spectra of crystalline and glassy PbGeS<Subscript>3</Subscript>

Edge absorption spectra of crystalline and glassy lead thiogermanate (PbGeS₃) have been measured in the temperature range from 77 to 470 K. It is shown that the dependence of the absorption coefficient on the photon energy for the glassy and crystalline states in the polarization E ∥ c is described by the Urbach rule. For the crystal in the polarization E ∥ b, at T < 300 K, an almost parallel shift of the intrinsic absorption edge to lower energies occurs with an increase in temperature, whereas at T ≥ 300 K, the Urbach absorption edge is observed. The parameter σ₀, related to the electron-phonon coupling constant, and the energy ?ω_ph of the effective phonons involved in the formation of the absorption edge of crystalline PbGeS₃ are determined from the temperature dependence of the parameter of the absorption edge slope. The contributions of the dynamic and static disorders to the diffusion of the absorption edge of crystalline PbGeS₃, as well as the topological disorder of glassy PbGeS₃, have been estimated.     

Study of field emission and dielectric properties of AlN films prepared by DC sputtering technique at different substrate temperatures

Nanocrystalline AlN thin films were prepared via DC sputtering technique at different substrate temperature. The crystal orientation and particle size of aluminum nitride thin films were investigated by XRD analysis. Study indicated that the sample contained pure phase hexagonal AlN nanoparticles with a single peak corresponding to the (100) planes. The peak at 665 cm⁻¹ in the FTIR spectrum of film was assigned to the LO phonon of hexagonal AlN. The particle size of the film, prepared at substrate temperature 200°C was about 9.5 nm, as investigated by atomic force microscope. Field emission study indicated that it can be used as a good field emitter. Turn-on field (E_to) of 15.02 V/μm was observed for the AlN films synthesized at substrate temperature 200°C. Dielectric constant of the AlN film was found nearly independent of frequencies in the measured frequency range 1 KHz to 1 MHz, i.e. in the audio frequency range. The values of dielectric constant (ε) were 10.07, 9.46 and 8.65 for the film prepared at 70°C, 150°C and 200°C, respectively, at frequency 1 KHz.     

Evaluation of Activation Energies for Pairwise and Non-Pairwise Hydrogen Addition to Propyne Over Pd/Aluminosilicate Fiberglass Catalyst by Parahydrogen-Induced Polarization (PHIP)

Hydrogenation of propyne to propene over Pd/aluminosilicate fiberglass catalyst in the temperature range 175–350 °C was investigated with the use of parahydrogen-induced polarization (PHIP) technique. Activation energies for both pairwise and non-pairwise H₂ addition routes were estimated. It was found that at 175–275 °C the activation energies for hydrogen addition to the triple bond of propyne have similar values (about 60–70 kJ/mol) for both routes of hydrogen addition. At higher temperatures (275–350 °C), the rate constant for pairwise hydrogen addition reaches a maximum value while the rate constant for non-pairwise hydrogen addition continues to increase with increasing temperature.     

The Thermal Stability and Rheological Properties of Alkylated Carboxymethyl Starch

Several alkylated carboxymethyl starches (CMS) with different alkyl chain lengths were prepared. The influence of the number of alkyls on the thermal stability and rheological properties, such as thickening properties, salt-tolerance, temperature sensitivity and time-dependent rheological behavior, are discussed. The initial decomposition temperature (IDT) of alkylated CMS reached 263°C ～293°C which, as compared to the IDT for CMS itself (230°C), indicated that the thermal stability of CMS was improved after being alkylated. The solution viscosities of the alkylated carboxymethyl starch increased with the increasing of alkyl length. With the alkyl chain length increasing from C₂ to C₈, the viscosity increased from 400 mPa·s to 38000 mPa·s. The weak hydrophobic aggregation of the alkyl groups did not improve the shear-resistance and relative hysteresis area. But the temperature sensitivity of alkylated CMS was improved as the chain length of the alkyl groups increased, as the activation energy (E_a) value decreased from 2.082 kJ·mol^?1 to 0.077 kJ·mol^?1; Improving the rigidity of the molecular chains and reducing the network structure of the hydrophobic contribution to the viscosity of the solution are benefits for improving the salt-tolerance and shear-resistance of the aqueous solution.     

Effects of deposition temperature and post-annealing on structure and electrical properties in (La<Subscript>0.5</Subscript>Sr<Subscript>0.5</Subscript>)CoO<Subscript>3</Subscript> films grown on silicon substrate

(La_0.5Sr_0.5)CoO₃ (LSCO) thin films have been fabricated on silicon substrate by the pulsed laser deposition method. The effects of substrate temperature and post-annealing condition on the structural and electrical properties are investigated. The samples grown above 650°C are fully crystalline with perovskite structure. The film deposited at 700°C has columnar growth with electrical resistivity of about 1.99×10⁻³ Ω cm. The amorphous films grown at 500°C were post-annealed at different conditions. The sample post-annealed at 700°C and 10⁻⁴ Pa has similar microstructure with the sample in situ grown at 700°C and 25 Pa. However, the electrical resistivity of the post-annealed sample is one magnitude higher than that of the in situ grown sample because of the effect of oxygen vacancy. The temperature dependence of resistivity exhibits semiconductor-like character. It was found that post-annealing by rapid thermal process will result in film cracks due to the thermal stress. The results are referential for the applications of LSCO in microelectronic devices.     

Raman characterization before and after rapid thermal annealing of CeO2 thin films grown by rf sputtering on (111) Si

We investigated by Raman spectroscopy (RS) the crystalline quality of CeO₂ thin films radio frequency magnetron sputtered on n‐type (111) Si substrates from CeO₂ target. The deposition temperature was in the range of 200–800 °C. We also realized structural investigations on CeO₂ layers after Rapid Thermal Annealing (RTA) performed in the range of 750–1000 °C for 30 s under nitrogen atmosphere. So this study displays that a high‐growth temperature and a high post‐growth‐RTA temperature improves the crystalline structure of the film. In fact, the best crystalline quality, which is close to the CeO₂ target taken as a reference, is obtained for a CeO₂ layer deposited at 800 °C and post‐annealed at 1000 °C for 30 s. Copyright © 2008 John Wiley & Sons, Ltd.     

Small-angle neutron scattering studies of nonionic surfactant: Effect of sugars

Micellar solution of nonionic surfactantn-dodecyloligo ethyleneoxide surfactant, decaoxyethylene monododecyl ether [CH₃(CH₂)₁₁(OCH₂CH₂)₁₀OH], C₁₂E₁₀ in D₂O solution have been analysed by small-angle neutron scattering (SANS) at different temperatures (30, 45 and 60° C) both in the presence and absence of sugars. The structural parameters like micelle shape and size, aggregation number and micellar density have been determined. It is found that the micellar structure significantly depends on the temperature and concentration of sugars. The micelles are found to be prolate ellipsoids at 30° C and the axial ratio of the micelle increases with the increase in temperature. The presence of lower concentration of sugar reduces the size of micelles and it grows at higher concentration of sugar. The structure of micelles is almost independent of the different types of sugars used.