共查询到20条相似文献,搜索用时 0 毫秒
1.
文章介绍了我们利用脉冲激光沉积(PLD)方法原位生长MgB2超导薄膜的工作.实验采用两步法的方案:高真空条件下在Al2O3(001)衬底上沉积Mg-B混合物加覆盖Mg层的双层结构,然后将该前驱体在630℃左右的Ar气氛中原位退火。成功制备出了有较好重复性的MgB2超导薄膜,其最高的起始转变温度为36.5K。转变宽度在1K左右.我们认为该方法为进一步研究基于MgB2的多层结构器件提供了一种可行的发展思路. 相似文献
2.
3.
4.
利用直流辉光放电等离子体辅助的脉冲激光沉积技术在Si衬底上生长了碳氮薄膜.通过扫描电子显微镜、X射线衍射、X射线光电子能谱、俄歇电子能谱等多种手段,对薄膜的形貌、成分、晶体结构、价键状态等特性进行了分析和确定.结果表明,沉积薄膜为含有非晶SiN和晶态氮化碳颗粒结构,晶态成分呈多晶态,主要为α-C3N4相、β-C3N4相,晶粒大小为40—60nm.碳氮之间主要以C-N非极性共价键形式相结合.
关键词:
脉冲激光沉积
直流辉光放电
碳氮薄膜 相似文献
5.
利用脉冲激光沉积结合计算机辅助衬底扫描技术制备了
尺寸为70×66mm、均匀性为±5%的类金刚石薄膜,薄膜显微硬度最高为27GPa,薄
膜结合强度达到20000转;在制备大尺寸薄膜的过程中,衬底扫描速度越慢,薄膜的均匀性
越好;在应用传统清洗等方法的基础上,认为增大镀膜粒子的能量对于提高薄膜和衬底的结
合强度是非常重要的. 相似文献
6.
7.
8.
9.
ANALYSIS OF THE X-RAY PHOTOELECTRON SPECTRA OF a-SiOCF FILMS PREPARED BY PLASMA-ENHANCED CHEMICAL VAPOUR DEPOSITION 下载免费PDF全文
The preparation of a-SiOCF films from Si(OC2H5)4, C4F8 and/or Ar using the plasma-enhanced chemical vapour deposition method is reported. The chemical bonding structures of the films are analysed by x-ray photoelectron spectroscopy (XPS). In the case of the films deposited from the mixture with and without Ar, the configurations of F-Si-O-Si, Si-OH, Si-O-Si, C-CF and C-F are contained. However, there is also the C-C configuration in the film prepared from the mixture with Ar. Moreover, it is found that the photoelectron peaks of Si 2p, O 1s and F 1s for the film deposited from the feeding gas with Ar show the same shift of about 1eV toward high binding energy in comparison with those for the film prepared from the feeding gas without Ar. No evidence reveals the presence of an Si-C bond in the films. 相似文献
10.
11.
利用我们设计的一套光学变换传输系统实现了激光束在超导靶上一定范围内扫描消融来淀积高Tc超导薄膜。实验表明用这种激光扫描消融方法可使大尺寸超导薄膜的厚度均匀性得到较大的改善。我们采用激光扫描半径为9mm在12mm×33mm的Y-ZrO2基片上淀积出零电阻温度Tc≥90K,临界电流密度Jc(零磁场,77K)≥1×106A/cm2,薄膜c轴择优取向,厚度均匀性较好的YBa
关键词: 相似文献
12.
脉冲高能量密度等离子体是一项全新的等离子体材料表面处理和薄膜制备技术。文章主要介绍了作者近几年来在这方面的研究成果。从理论和试验上研究了脉冲高能量密度等离子体的产生机制及其物理性质,研究了脉冲等离子体与材料相互作用的基本物理现象和物理机制,诊断测量表明,脉冲等离子体具有电子温度高(10-100eV)、等离子体密度高(10^14-10^16cm^-3)、定向速度高(-10^7cm/s)、功率大(10^4W/cm^2)等特点,在制备薄膜时具有沉积速率高,薄膜与基底粘结力强,并兼有激光表面处理、电子束处理、冲击波轰击、离子注入、溅射、化学气相沉积等综合性特点,可以在室温下合成亚稳态相和其他化合物材料。在此基础上,系统地进行了脉冲等离子体薄膜制备和材料表面改性及其机理的研究,在室温下的不同材料衬底上成功的沉积了性能良好的较大颗粒立方氮化硼、碳氮化钛、氮化钛、类金刚石、氮化铝等薄膜材料,沉积薄膜和基底之间存在一个很宽的过渡层,因此导致薄膜与基底有很强的粘结力,经脉冲等离子体处理过的金属材料表面性能得到了极大改善。 相似文献
13.
采用高氢稀硅烷热丝化学气相沉积方法制备氢化微晶硅薄膜.其结构特征用Raman谱,红外透射谱,小角X射线散射等来表征.结果表明微晶硅的大小及在薄膜中的晶态比χc随氢稀释度的提高而增加.而从红外谱计算得到氢含量则随氢稀释度的增加而减少.小角X射线散射结果表明薄膜致密度随氢稀释度的增加而增加.结合红外谱和小角X射线散射的结果讨论与比较了不同相结构下硅网络中H的键合状态.认为随着晶化的发生和晶化程度的提高H逐渐移向晶粒表面,在硅薄膜中H的存在形式从以SiH为主向SiH2
关键词: 相似文献
14.
15.
16.
实验研究表明,SnO2薄膜经过退火处理后其光致发光谱有明显的变化。在氧和氮两种不同气氛中进行热处理,其变化也有差异。这种变化主要是由于SnO2膜中氧空位和自由载流于浓度变化所致。 相似文献
17.
The micro-Raman spectroscopy and infrared (IR) spectroscopy have been performed for the study of the microstructure of amorphous hydrogenated oxidized silicon (a-SiOx:H) films prepared by Plasma Enhanced Chemical Vapor Deposition technique. It is found that a-SiOx:H consists of two phases: an amorphous silicon-rich phase and an oxygen-rich phase mainly comprised of HSi-SiO2 and HSi-O3. The Raman scattering results exhibit that the frequency of TO-like mode of amorphous silicon red-shifts with decreasing size of silicon-rich region. This is related to the quantum confinement effects, similar to the nanocrystalline silicon. 相似文献
18.
When laser pulses irradiate the surface of the sample WO3, an interesting coloration effect is obtained. Only by one pulse of XeCl laser irradiation (wavelength: 308 nm, pulse duration: 36 ns, output power: 100 mJ/pulse), a significant color change appears. X-ray photoelectron spectroscopy (XPS) shows that a partial reduction process of WO3 occurs and conduction band electrons appears. X-ray diffraction pattern indicates that the lattice parameters of the colored samples are increased. A molten layer can be seen in scanning electron microscopy (SEM) image. It may be concluded that the coloration effect of pulsed laser undergoes a process different from that of electro- or photo- chromism, and may be attributed to thermochromism and substoichiometric WO3 is formed. The coloration process is characterized by its high speed and stability. 相似文献
19.
传统全三氟乙酸前驱液对涂敷环境湿度、低温预分解过程中的升温速率和水汽分压等因素具有敏感性,采用改进型前驱液可以降低其敏感性,从而有利于涂层导体的连续制备.我们提出的改进型前驱液中,三氟乙酸钇、三氟乙酸钡和苯甲酸铜是前驱体,甲醇和丙酸的为溶剂.采用化学溶液法在铝酸镧单晶衬底上制备YBCO,低温分解阶段以1~5℃/min快速升温,可以获得低温后的前驱膜光滑完整,无裂纹.通过X衍射分析和扫描电镜分析了薄膜的织构和表面微结构,四引线法测试薄膜超导电性.采用改进型前驱液制备的薄膜超导转变温度(Tc)为90K,在77K、自场下临界电流密度(Jc)为1MA/cm2. 相似文献
20.
PULSED LASER DEPOSITION AND CHARACTERIZATION OF FERHOELECTHIC Pb(Zr,Ti)O3 THIN FILMS ON SILICON-ON-INSULATOR SUBSTRATES 下载免费PDF全文
Ferroelectric Pb(Zr, Ti)O3 thin films were prepared by pulsed exeimer laser deposition on silicon-on-insulator and Pt-coated silicon-on-insulator substrates, and rapid thermal annealing was per-formed to crystallize the films, Based on the analysis by X-ray diffraction, Rutherford backscattering spectroscopy and measurements of electrical properties, the films were revealed to be polycrystalline perovskite structure with mainly (100) and (110) orientations, and their crystallization was found to be dependent on annealing temperature and annealing time. The films show good ferroelectricity, with Pr=15μC/cm2, Ec= 50kV/cm, high resistivity and high dielectric constant. 相似文献