Saturated low‐temperature conductivity in ultrafast semiconductor nanocomposites

This Letter presents studies on low‐field electrical conduction in the range of 4–300 K for an ultrafast material, i.e., InGaAs:ErAs grown by molecular beam epitaxy. The unique properties include nano‐scale ErAs crystallites in the host semiconductor InGaAs, a deep Fermi level and picosecond ultrafast photocarrier recombination. As the temperature drops, the conduction mechanisms are in the sequence of: thermal activation, nearest‐neighbor hopping, and variable‐range hopping. In the low‐temperature limit, finite‐con‐ductivity metallic behavior, not insulating, was observed. This unusual conduction behavior, related to the nanometer‐scale ErAs crystallite islands, is explained with the Abrahams scaling theory.

     

Thermal conductivity reduction and thermoelectric figure of merit increase by embedding nanoparticles in crystalline semiconductors

Atomic substitution in alloys can efficiently scatter phonons, thereby reducing the thermal conductivity in crystalline solids to the "alloy limit." Using In0.53Ga0.47As containing ErAs nanoparticles, we demonstrate thermal conductivity reduction by almost a factor of 2 below the alloy limit and a corresponding increase in the thermoelectric figure of merit by a factor of 2. A theoretical model suggests that while point defects in alloys efficiently scatter short-wavelength phonons, the ErAs nanoparticles provide an additional scattering mechanism for the mid-to-long-wavelength phonons.     

Local density of states and interface effects in semimetallic ErAs nanoparticles embedded in GaAs

The atomic and electronic structures of ErAs nanoparticles embedded within a GaAs matrix are examined via cross-sectional scanning tunneling microscopy and spectroscopy (XSTM/XSTS). The local density of states (LDOS) exhibits a finite minimum at the Fermi level demonstrating that the nanoparticles remain semimetallic despite the predictions of previous models of quantum confinement in ErAs. We also use XSTS to measure changes in the LDOS across the ErAs/GaAs interface and propose that the interface atomic structure results in electronic states that prevent the opening of a band gap.     

Evidence for a strong surface-plasmon resonance on ErAs nanoparticles in GaAs

Room-temperature attenuation measurements are made between lambda=0.8 and 10.0 microm on three GaAs epitaxial samples containing layers of ErAs nanoparticles. An asymmetric attenuation peak is observed around 2.5 microm that increases in strength with ErAs density, and is modeled well by a Maxwell-Garnett formulation and semiclassical transport theory. The nanoparticles are assigned a distribution function of oblate spheroids having a minimum volume corresponding to a 1.0-nm sphere. This is consistent with the self-organizing tendency of ErAs in GaAs, and explains the sharp attenuation peak as a spherical-particle surface-plasmon (i.e., Fr?hlich) resonance.     

Controlling the charging energy of arrays of tunnel junctions

We describe a new technique to control in situ charging energy of systems of coupled metallic or superconducting islands. To illustrate the technique, we have fabricated two-dimensional arrays of Al islands on GaAs/AlAs heterostructures. Each island is coupled to its nearest-neighbor by a submicron Al/AlO_x/Al tunnel junction and to the three-dimensional electron gas (3DEG) located below the surface of the heterostructure by a capacitance C_g. We vary C_g, which dominates the charging energy of the array, by depleting the electrons in the 3DEG by means of a negative voltage applied to the array. With the array driven normal by a magnetic field, a decrease in C_g increases in both the offset voltage and the period of the Coulomb blockade oscillations.     

Ultrafast optical switching of terahertz metamaterials fabricated on ErAs/GaAs nanoisland superlattices

We demonstrate optical switching of electrically resonant terahertz planar metamaterials fabricated on ErAs/GaAs nanoisland superlattice substrates. Photoexcited charge carriers in the superlattice shunt the capacitive regions of the constituent elements, thereby modulating the resonant response of the metamaterials. A switching recovery time of 20 ps results from fast carrier recombination in the ErAs/GaAs superlattice substrates.     

Two dimensional electron gas in a hybrid GaN/InGaN/ZnO heterostructure with ultrathin InGaN channel layer

We investigated the influence of an ultrathin InGaN channel layer on two-dimensional electron gas (2DEG) properties in a newly proposed hybrid GaN/In_xGa_1−xN/ZnO heterostructure using numerical methods. We found that 2DEG carriers were confined at InGaN/ZnO and GaN/InGaN interfaces. Our calculations show that the probability densities of 2DEG carriers at these interfaces are highly influenced by the In mole fraction of the InGaN channel layer. Therefore, 2DEG carrier confinement can be adjustable by using the In mole fraction of the InGaN channel layer. The influence of an ultrathin InGaN channel layer on 2DEG carrier mobility is also discussed. Usage of an ultrathin InGaN channel layer with a low indium mole fraction in these heterostructures can help to reduce the short-channel effects by improvements such as providing 2DEG with higher sheet carrier density which is close to the surface and has better carrier confinement.     

N极性GaN/AlGaN异质结二维电子气模拟

通过自洽求解薛定谔方程和泊松方程,较系统地研究了GaN沟道层、AlGaN背势垒层、Si掺杂和AlN插入层对N极性GaN/AlGaN异质结中二维电子气(2DEG)的影响,分析表明,GaN沟道层厚度、AlGaN背势垒层厚度及Al组分变大都能一定程度上提高二维电子气面密度,AlGaN背势垒层的厚度和Al组分变大也可提高二维电子气限阈性,且不同的Si掺杂形式对二维电子气的影响也有差异,而AlN插入层在提高器件二维电子气面密度、限阈性等方面表现都较为突出,在模拟中GaN沟道层厚度小于5nm时无法形成二维电子气,超过20nm后二维电子气面密度趋于饱和,而AlGaN背势垒厚度超过40nm后二维电子气也有饱和趋势,对均匀掺杂和delta掺杂而言AlGaN背势垒层Si掺杂浓度超过5×10~(19)cm~(-3)后2DEG面密度开始饱和,而厚度为2nmAlN插入层的引入会使2DEG面密度从无AlN插入层时的0.93×10~(13)cm~(-2)提高到1.17×10~(13)cm~(-2)。     

Electronic transport in mesoscopic superconductor/2D electron gas junctions in strong magnetic field

The hybrid superconductor/2D electron gas (S/2DEG) structures based on InGaAs-InP hetero-junctions with a high-mobility 2D electron gas and superconducting NbN electrodes have been investigated. The electronic transport and current-voltage characteristics of S/2DEG/normal metal (S/2DEG/N) structures in strong perpendicular magnetic fields have been studied. Oscillations in the magnetoresistance of S/2DEG/N structures have been found in strong magnetic fields. It is shown that at bias voltages lower than the superconducting gap the amplitude of oscillations in S/2DEG/N structures significantly exceeds the oscillation amplitude in the reference N/2DEG/N samples. The experimental results can be explained within the quasiclassical theory of magnetotransport in S/2DEG structures developed by N.M. Chtchelkatchev and I.S. Burmistrov (Phys. Rev. B, 2007, vol. 75, 214 510).     

ZnMgO/ZnO异质结构中二维电子气的研究

论文根据ZnMgO/ZnO异质结构二维电子气的能带结构及相关理论模型, 采用一维Poisson-Schrodinger方程的自洽求解, 模拟计算了ZnMgO/ZnO异质结构中二维电子气的分布及其对ZnMgO势垒层厚度及Mg组分的依赖关系. 研究发现该异质结构中ZnMgO势垒层厚度存在一最小临界值: 当垒层厚度小于该临界值时, 二维电子气消失, 当垒层厚度大于该临界值时, 其二维电子气密度随着该垒层厚度的增加而增大; 同时研究发现ZnMgO势垒层中Mg组分的增加将显著增强其二维电子气的行为, 导致二维电子气密度的明显增大; 论文对模拟计算获得的结果与相关文献报道的实验结果进行了比较, 并从极化效应和能带结构的角度进行了分析和讨论, 给出了合理的解释. 关键词： 氧化锌 二维电子气 异质结构 理论计算     

Impedance-based interfacial analysis of the LaAlO3/SrTiO3 oxide heterostructure involving a 2-dimensional electron gas layer

The 2-dimensional electron gas (2DEG) at the LaAlO₃/SrTiO₃ heterointerface was analyzed using frequency-dependent impedance spectroscopy. The electrical conduction of 2DEG significantly influences the high-frequency impedance and induces dielectric amplification at low frequency regimes. The impedance responses obtained from the LaAlO₃/SrTiO₃ oxide was modeled using an equivalent circuit model. The frequency-dependent characterization used here does not necessitate the formation of ohmic contacts between the 2DEG layer and the adjacent electrodes. Through thermal bias-stress tests, the 2DEG conduction mechanism is proposed to partially originate from the oxygen vacancy-controlled defect concepts, indicating the controllability of 2DEG transport.     

Influence of retardation effects on a 2D magnetoplasmon spectrum

Within a dissipationless limit, the magnetic field dependence of the magnetoplasmon spectrum for an unbounded two-dimensional electron gas (2DEG) system was found to intersect the cyclotron resonance line and, then, approach the frequency given by light dispersion relation. Recent experiments done for macroscopic disc-shaped 2DEG systems confirm theoretical expectations.     

High-quality two-dimensional electron gas at an inverted undoped heterointerface

A back-gated undoped heterostructure, in which a two-dimensional electron gas (2DEG) is formed at the inverted undoped heterointerface through the back-side field effect, offers the possibility of high mobility and the feasibility of fabricating several kinds of back-gated structures. We used such a 2DEG system to fabricate a Corbino-disk structure. The results for the back-gated Corbino-disk structure show that the density of the 2DEG is well controlled by the back-gate bias and the fine structures corresponding to the integer and fractional quantized Hall effects are clearly observed, reflecting the high quality of the 2DEG formed in the undoped heterostructure. The characteristics in a low magnetic field region confirm the homogeneous back-gate control of the 2DEG down to a density of less than 10¹⁰cm⁻².     

Hysteretic microwave cyclotron resonance of a laterally confined 2 DEG

A hysteretic cyclotron resonance (CR) is discovered in a laterally confined high mobility two-dimensional electron gas (2DEG) in GaAs/AlGaAs heterostructures. The hysteresis and switching phenomena are observed in microwave radiation (36 GHz) transmission at temperature 1.8–25 K. It is found that the hysteresis is accompanied by long-lived, microwave-induced changes of the 2DEG density. These density changes is attributed to a modification of electron vertical transport processes in heterostructures under the microwave heating of the 2DEG. A phenomenological model based on the 2DEG density-dependent CR, describes reasonably the main experimental findings.     

DX-center energy calculation with quantitative mobility spectrum analysis in n-AlGaAs/GaAs structures with low Al content

Experimental Hall data that were carried out as a function of temperature (60–350 K) and magnetic field (0–1.4 T) were presented for Si-doped low Al content (x=0.14) n–Al_xGa_1−xAs/GaAs heterostructures that were grown by molecular beam epitaxy (MBE). A 2-dimensional electron gas (2DEG) conduction channel and a bulk conduction channel were founded after implementing quantitative mobility spectrum analysis (QMSA) on the magnetic field dependent Hall data. An important decrease in 2DEG carrier density was observed with increasing temperature. The relationship between the bulk carriers and 2DEG carriers was investigated with 1D self consistent Schrödinger–Poisson simulations. The decrement in the 2DEG carrier density was related to the DX-center carrier trapping. With the simulation data that are not included in the effects of DX-centers, 17 meV of effective barrier height between AlGaAs/GaAs layers was found for high temperatures (T>300 K). With the QMSA extracted values that are influenced by DX-centers, 166 meV of the DX-center activation energy value were founded at the same temperatures.     

Spin Hall effect generated by a temperature gradient and heat current in a two-dimensional electron gas

We predict an intrinsic thermo-spin Hall effect, namely, that a transverse spin current is generated by the temperature gradient and the heat current in a disorder-free two-dimensional electron gas (2DEG) with finite spin–orbit coupling. There exist two classes of contributions to the thermal spin Hall effect, corresponding to a 2DEG contacting two reservoirs at different temperatures and to a 2DEG separated from the reservoirs by insulating spacers, respectively. It is shown that the thermal spin Hall current can be generated not only by the temperature gradient directly but also by the thermoelectric effect.     

Preparation and Properties of Polyurethane Hydrogels Based on Hexamethylene Diisocyanate/Polycaprolactone-Polyethylene Glycol

Hydrogels are considered an optimum material for controlled release drug systems and tissue engineering scaffolds since they are tri-dimensional networks. In this work hexamethylene diisocyanate (HMDI), polycaprolactone (PCL) and polyethylene glycol (PEG) were used to prepare polyurethane prepolymers using diethylene glycol (DEG) as a chain-extender. Then the prepolymer was used to fabricate the HMDI/PCL-PEG/DEG polyurethane hydrogels by free radical polymerization using benzoyl peroxide (BPO) as a cross-linking agent. The influences of the ratio of polyol on the contact angle, swelling ratio, morphology and cytotoxicity in-vitro of the HMDI/PCL-PEG/DEG polyurethane hydrogel were investigated. The biological behavior of the polyurethane hydrogels was analyzed by studying the cell behavior using the standard biological MTT (3–4,5-dimethyl-2-thiazolyl)-2,5-diphenyl-2-H-tetrazolium bromide) test. The Fourier transform infrared (FTIR) spectra results showed that the polyurethane hydrogels were successfully synthesized. The change of the molar the ratio of the polyhydric alcohols (PEG and PCL) played important roles in the swelling degree, the contact angle and the pore size. The HMDI/PCL-PEG/DEG polyurethane hydrogel (PCL/PEG = 1:3) was hydrophilic with many more large pores while the polyurethane hydrogel with PCL/PEG = 3:1 had a dense structure. The fibroblastic cell proliferation improved with decreasing relative PEG content; however, there were insignificant differences (P > 0.05) on all days of observation of the samples with various PEG contents compared with the negative control group. The MTT assays revealed that the cells were able to grow and proliferate quite quickly in the extracts of the HMDI/PCL-PEG/DEG polyurethane hydrogels as well as the extract of the negative control.     

The low-temperature mobility of two-dimensional electron gas in AlGaN/GaN heterostructures

To reveal the internal physics of the low-temperature mobility of two-dimensional electron gas （2DEG） in Al- GaN/GaN heterostructures, we present a theoretical study of the strong dependence of 2DEG mobility on Al content and thickness of AlGaN barrier layer. The theoretical results are compared with one of the highest measured of 2DEG mobility reported for AlGaN/GaN heterostructures. The 2DEG mobility is modelled as a combined effect of the scat- tering mechanisms including acoustic deformation-potential, piezoelectric, ionized background donor, surface donor, dislocation, alloy disorder and interface roughness scattering. The analyses of the individual scattering processes show that the dominant scattering mechanisms are the alloy disorder scattering and the interface roughness scattering at low temperatures. The variation of 2DEG mobility with the barrier layer parameters results mainly from the change of 2DEG density and distribution. It is suggested that in AlGaN/GaN samples with a high Al content or a thick AlGaN layer, the interface roughness scattering may restrict the 2DEG mobility significantly, for the AlGaN/GaN interface roughness increases due to the stress accumulation in AlGaN layer.     

Two-dimensional electron gas densities in AlGaN/AlN/GaN heterostructures

The dependence of two-dimensional electron gas (2DEG) density and distribution in an Al_xGa_1-xN/AlN/GaN heterostructure on the thicknesses of the Al_xGa_1-xN barrier layer and the AlN interfacial layer are investigated theoretically. A competitive contribution of the AlGaN and AlN layers to the 2DEG density is revealed. For an AlN interfacial layer thinner than a critical value d_cAlN, the 2DEG density is dominated by the AlGaN barrier and the 2DEG density increases with the increase of the AlGaN barrier thickness, as in the case of a simple AlGaN/GaN heterostructure. While the AlN interfacial layer will take the dominant contribution to the 2DEG density as its thickness exceeds d_cAlN. In this case, the increase of AlGaN barrier layer thickness leads to the decrease of the 2DEG density. Detailed calculations show that the critical AlN thickness increases with the increase of Al content in the AlGaN barrier. PACS 85.30.De; 73.40.Kp; 02.60.Cb     

Preparation and Properties of 2, 4-2-Isocyanic Acid Methyl Ester/Poly(ϵ-caprolactone)/Diethylene Glycol Hydrogels

The hydrophilic polyurethane (PU) hydrogels have become attractive in the biomedical field for drug delivery. In this work 2, 4-2-isocyanic acid methyl ester (TDI), poly(?-caprolactone) (PCL), and poly(ethylene glycol) (PEG) were used to prepare a prepolymer and then diethylene glycol (DEG) was used as a chain extender to prepare a novel hydrophilic polyurethane, TDI/PCL-PEG/DEG. The obtained PU hydrogels were characterized by Fourier transform infrared (FT-IR) spectroscopy and scanning electronic microscopy (SEM). By varying the ratio of PCL to PEG in the copolymer, modulations of hydrophilicity and drug release behavior were observed. FT-IR analysis confirmed the successful synthesis of the TDI/PCL-PEG/DEG hydrogels. The introduction of PEG into the PU hydrogels led to a porous structure. The water contact angle and swelling ratio results confirmed that the hydrophilicity increased with increasing amounts of the PEG segments. The introduction of PEG also increased the release rate of chloramphenicol, used as model drug, from the PU hydrogels.