碱土金属原子激光的共振辐射俘获效应

根据Holstein理论研究了碱土金属原子激光中的共振辐射俘获效应，分别计算了Ca，Sr和Ba蒸气激光在不同半径时产生共振辐射俘获效应的阈值温度、基态粒子数密度和共振能级的有效寿命.发现计算得到的阈值温度与实验报道的开始产生激光的工作温度一致，表明共振辐射俘获效应是这类激光形成粒子数反转的一个重要机制. 关键词： 共振辐射俘获 碱土金属原子激光 阈值温度     

钙、锶、钡和汞离子激光中的共振辐射俘获效应

根据Holstein的共振辐射俘获理论，讨论了气体温度和辐射俘获下能级粒子数密度对辐射俘获上能级有效辐射寿命的影响，显示辐射俘获下能级粒子数密度是辐射俘获效应中的主导因素.计算了钙，锶，钡和汞四种离子七条共振-亚稳能级跃迁激光在不同电离率下产生共振辐射俘获效应的阈值条件，发现当电离率为5%时这类激光的出光温度与共振辐射俘获的阈值温度相一致，这与实验得出的电离率为3%—5%相符合.表明达到共振辐射俘获阈值条件是该类激光实现粒子数反转的重要因素.     

非简并A型三能级原子的速度选择相干布居俘获

研究了非简并A型三能级原子速度选择相干布居俘获与原子能级结构的非对称性以及原子．激光失谐之间的关系，指出相对于简并、共振情况，原子动量分布的概率峰峰值降低、最可几动量发生变化，而且原子的俘获时间也变得很长．     

俘获电子效应对低杂波电流驱动的影响

利用的程序是基于FASTFP开发的RFP准线性Fokker-Planck程序，该程序适用于各种辅助加热和电流驱动的动力学计算.利用开发的编码对低杂波在托卡马克等离子体中的吸收和驱动效率进行了Fokker-Planck计算，考查了环形托卡马克装置的纵横比对波功率沉积和电流驱动效率产生的作用.研究表明，俘获电子效应对低杂波电流驱动的影响与波驱动的功率谱结构有关.俘获电子的平行速度较低，优化的功率谱可以在共振的电子数和俘获电子之间取得折中.俘获电子效应可以使低杂波电流驱动效率减小30%. 关键词： Fokker-Planck方程 俘获电子效应 低杂波电流驱动     

低能中子的俘获γ射线能谱

给出了计算共振区平均中子俘获r能谱的方案。主要考虑了三种反应机制:统计过程、位阱俘获与复弹性道中的俘获脚。具体计算了3s共振区几个核素⁵¹V,⁵²Cr,⁵⁵Mn的热中子俘获r能谱和r光子多重数。结果表明,包括了复弹性道中的俘获这一过程后,理论与实验的符合得到明显的改善,特别是对能谱的高能端。     

12C快中子辐射俘获反应中的共振现象

主要研究中子辐射俘获反应中的共振现象,利用DSD模型计算激发能量在5—25MeV能区的¹²C(n,γ0)反应截面与E_n=9MeV时的角分布.所考虑的反应机制包括复合核俘获、直接和半直接俘获、复弹性和非弹性散射道的辐射俘获.计算表明,矮共振的峰值在激发能量为13MeV处;巨共振的峰值位置在激发能量21MeV处.计算结果与实验符合较好.     

非简并Λ型三能级原子的速度选择相干布居俘获

研究了非简并Λ型三能级原子速度选择相干布居俘获与原子能级结构的非对称性以及原子-激光失谐之间的关系.指出相对于简并、共振情况，原子动量分布的概率峰峰值降低、最可几动量发生变化，而且原子的俘获时间也变得很长.     

随机激励下双稳态压电俘能系统的相干共振及实验验证

随着压电晶体材料的迅速发展, 基于压电效应的能量采集系统是俘获环境中的宽带随机振动能量的一种有效途径. 研究了有限宽带随机激励作用下, 磁斥力双稳态压电俘能系统的相干共振俘能机理, 并进行了实验验证. 运用Euler-Maruyama方法求解了随机非线性压电振动耦合方程, 比较分析了相干共振发生前后系统的动力学特性和俘能效率, 然后基于Kramers逃逸速率解释了相干共振. 最后的随机振动实验结果验证了双稳态压电俘能系统的相干共振俘能机理. 并且观察到: 当相干共振发生时, 系统会在两个势能阱之间剧烈运动, 此时宽带随机振动能量会被转化为大幅值窄带低频振动响应, 从而极大地提高了宽带随机振动能量的俘获效率.     

用吸收法对铯原子磁光阱中冷原子数目的测量

介绍了吸收法测量冷原子数的原理以及对铯原子气室磁光阱中俘获的冷原子数目的测量过程及结果. 与通常的荧光收集法相比，在原理上与静止二能级原子同共振单模光场作用的模型更加接近，同时大大减小了测量中的误差累积，提高了测量精度. 测得的冷原子数为(8±0.3)×10⁶，同时还利用测得的阱中俘获的稳态冷原子数和磁光阱中冷原子的寿命间接获得了磁光阱的俘获率. 关键词： 激光冷却与俘获 磁光阱 冷原子数目 俘获率     

A=40—70偶中子核素光子穿透系数的关联现象

本文给出了在共振区光子穿透系数的表示式,这由三部份组成,分别对应复合核统计过程、复合核弹性散射道及非弹性散射道中的辐射退激过程.研究了在中子强度函数3s巨共振区13个偶中子核素的中子辐射俘获截面.中子能量范围为3MeV以下的共振区.结果表明,在同时考虑了统计和非统计过程后,可以解释实验测量的总俘获截面及γ能谱.     

A simple approximative method for determination of Auger 1 lifetime in degenerate narrow gap semiconductors

Using the well-known Beattie-Landsberg expression for Auger 1 lifetime and the “effective” Auger energy gap (E_gA), we obtained a simple approximative expression for determination of the Auger 1 lifetime. We also obtained a formula for the electron concentration above which the effects of degeneration are significant.     

Mechanisms of Auger recombination in quantum wells

The main mechanisms for the Auger recombination of nonequilibrium carriers in semiconductor quantum-well heterostructures are investigated. It is shown for the first time that there are three fundamentally different Auger recombination mechanisms in quantum wells: 1) a threshold-free mechanism, 2) a quasithreshold mechanism, and 3) a threshold mechanism. The rate of the threshold-free process has a weak temperature dependence. The rate of the quasithreshold Auger process exhibits an exponential temperature dependence. However, the threshold energy depends significantly on the quantum-well width and is close to zero for narrow quantum wells. It is shown that the threshold-free and quasithreshold processes are dominant in fairly narrow quantum wells, while the quasithreshold and threshold Auger processes are dominant in wide quantum wells. The limiting transition to a three-dimensional Auger process is accomplished for a quantum-well width tending to infinity. The value of the critical quantum-well width, at which the quasithreshold and threshold Auger processes combine to form a single three-dimensional Auger recombination process, is found. Zh. éksp. Teor. Fiz. 113, 1491–1521 (April 1998)     

Microscopic theory of Auger recombination in quantum wires

An analysis is made of mechanisms for Auger recombination of nonequilibrium carriers in cylindrical quantum wires. It is shown that two different Auger recombination mechanisms take place in these wires: a quasi-threshold and a nonthreshold mechanism. Both mechanisms are associated with the presence of heterobarriers but are of a different nature. The quasi-threshold mechanism is attributed to the spatial confinement of the carrier wave functions to the region of the quantum wire and in this case the quasi-momentum conservation law is violated and the Auger recombination process is intensified. As the radius of the wire increases, the quasi-threshold Auger recombination process goes over to a threshold process. The nonthreshold mechanism is caused by the scattering of an electron (hole) at the heterojunction; the rate of this nonthreshold Auger recombination tends to zero in the limit of an infinite-radius wire.     

Energy and angular distributions of electrons emitted by direct double auger decay

We have observed the direct L(2,3)MMM double Auger transition after photoionization of the 2p shell of argon by angle-resolved electron-electron coincidence spectroscopy. The process is responsible for about 20% of the observed Auger electron intensity. In contrast to the normal Auger lines, the spectra in double Auger decay show a continuous intensity distribution. The energy and angular distributions of the emitted electrons allow one to obtain information on the electron correlations giving rise to the double Auger process as well as the symmetry of the associated two-electron continuum state.     

Laser-enabled Auger decay in rare-gas atoms

In rare-gas atoms, Auger decay in which an inner-valence shell ns hole is filled is not energetically allowed. However, in the presence of a strong laser field, a new laser-enabled Auger decay channel can open up to increase the double-ionization yield. This process is efficient at high laser intensities, where an ns hole can be filled within a few femtoseconds of its creation. This novel laser-enabled Auger decay process is of fundamental importance for controlling electron dynamics in atoms, molecules, and materials.     

Quantized bimolecular auger recombination of excitons in single-walled carbon nanotubes

Auger-like exciton-exciton annihilation in isolated single-walled carbon nanotubes (SWNTs) has been studied by femtosecond transient absorption spectroscopy. We observe a quantization of the Auger recombination process and extract dynamics for 2 and 3 electron-hole pair excited states. We further demonstrate that Auger recombination in SWNTs is a two-particle process involving strongly bound excitons and not a three-particle Auger process involving unbound electrons and holes. We thus provide explicit experimental evidence for one-dimensional discrete excitons in SWNTs.     

Unveiling residual molecular binding in triply charged hydrogen bromide

We present an experimental and theoretical study of triply charged hydrogen bromide ions formed by photoionization of the inner 3d shell of Br. The experimental results, obtained by detecting the 3d photoelectron in coincidence with the two subsequent Auger electrons, are analyzed using calculated potential energy curves of HBr3+. The competition between the short-range chemical binding potential and the Coulomb repulsion in the dissociative process is shown. Two different mechanisms are observed for double Auger decay: one, a direct process with simultaneous ejection of two Auger electrons to final HBr3+ ionic states and the other, a cascade process involving double Auger decay characterized by the autoionization of Br*+ ion subsequent to the HBr2+ fragmentation.     

Mechanisms of Auger recombination in semiconducting quantum dots

Microscopic calculation of the probability of Auger recombination of charge carriers localized in a semiconducting quantum dot (QD) is carried out. It is shown that two mechanism of Auger recombination (nonthreshold and quasi-threshold) operate in the QD. The nonthreshold Auger recombination mechanism is associated with scattering of a quasimomentum from a heterobarrier, while the quasi-threshold mechanism is connected with spatial confinement of the wave functions of charge carriers to the QD region; scattering of carriers occurs at the short-range Coulomb potential. Both mechanisms lead to a substantial enhancement of Auger recombination at the QD as compared to a homogeneous semiconductor. A detailed analysis of the dependence of Auger recombination coefficient on the temperature and QD parameters is carried out. It is shown that the nonthreshold Auger recombination process dominates at low temperatures, while the quasi-threshold mechanism prevails at high temperatures. The dependence of the Auger recombination coefficient on the QD radius experiences noticeable changes as compared to quantum wells and quantum filaments.     

Phonon-assisted auger recombination in degenerate semiconductors

Phonon-assisted Auger recombination is studied in strongly degenerate semiconductors since normal Auger recombination is negligible in this case. The results are discussed in connection with an electron-hole-plasma. There are some indications that phonon-assisted Auger recombination is an important process in this case.     

Number of electrons active in slow collisions of and with

Resonant excitation or resonant electron scattering is a two step process in which Auger rates are involved in both steps. First an electron is captured into a bound state and a bound electron is excited (inverse Auger effect). Then an Auger transition leads to the emission of the electron from the ion. The corresponding cross-sections are very sensitive to the Auger rates and allow a detailed study of the Breit interaction which is a current-current contribution to the static electron-electron interaction. The contribution of the Breit interaction to the cross-section of resonant excitation on hydrogen-like uranium ions is discussed and shown that it is roughly twice as large as in the case of dielectronic recombination. Received 4 August 1999 and Received in final form 29 September 1999