Magnetoresistance of an asymmetric quantum-size structure in a parallel magnetic field: Field asymmetry independent of the current direction

A new phenomenon, viz., field-asymmetric transverse magnetoresistance of a doped asymmetric quantum-size structure discovered in a magnetic field parallel to the heteroboundary planes, is studied experimentally and theoretically. The magnetoresistance asymmetry relative to the field direction, which is independent of the direction of transport current, is observed when a lateral electric field is embedded in the structure with the help of alloyed metallic contacts. In the theoretical part of the paper, it is shown that the contribution to current, which is asymmetric in the magnetic field, can be consistently described in the framework of the theory of spontaneous current states and photovoltaic effect in systems without an inversion center; the reason behind the emergence of this current is associated with the asymmetry of the energy spectrum of charge carriers relative to the quasimomentum. It is shown that the change in the size and shape of Fermi contours in a magnetic field determines the magnitude of the strong negative magnetoresistance associated with the intersubband scattering under investigation and is found to be responsible for the emergence of a qualitatively new effect mentioned in the title of this paper.     

Magnetoresistance of lightly doped TmBa2Cu3Ox crystals. Reorientation of the antiferromagnetic structure in a magnetic field

The magnetoresistance of lightly doped TmBa₂Cu₃O_x single crystals is investigated in the temperature range 4.2–300 K for magnetic fields up to 12 T. For the antiferromagnetic sample (x=6.3), when the current and field lie in the ab plane, the magnetoresistance is the sum of an anisotropic and a background component. The existence of the anisotropic component is attributed to the restructuring of the antiferromagnetic domain structure in a magnetic field. Pis’ma Zh. éksp. Teor. Fiz. 70, No. 5, 350–355 (10 September 1999)     

Giant negative magnetoresistance in a composite system based on Fe3O4 nanocrystals in a polymer matrix

Conducting polymer composites based on Fe₃O₄ nanocrystals in a polyvinyl alcohol matrix are synthesized. The current-voltage characteristics, the magnetization, and the magnetoresistance of the nanocomposites are investigated, and a giant negative magnetoresistance is observed. The decrease in the resistance at room temperature is found to reach 10% in a 10 kOe field. Pis’ma Zh. éksp. Teor. Fiz. 67, No. 1, 37–40 (10 January 1998)     

Photogalvanic effect in an asymmetric system of three quantum wells in a strong magnetic field

The photogalvanic effect (PGE) in an asymmetric undoped system of three GaAs/AlGaAs quantum wells illuminated with white light of various intensities is investigated in magnetic fields up to 75 kOe at temperatures ranging from 4.2 K up to 300 K. A maximum of the spontaneous photogalvanic current J ^PGE as a function of the magnetic field predicted by A. A. Gorbatsevich et al., JETP Lett. 57, 580 (1993), is observed. Analysis of the experimental data shows that the main initial characteristic of the PGE is not the spontaneous current but rather the electromotive force E ^PGE arising in the direction perpendicular to the applied magnetic field. It is determined that this emf is independent of the intensity of the incident light, increases linearly with the size d of the illuminated region, and decreases slowly with temperature: E _max ^PGE ∼0.8 V at 300 K and ∼0.1 V at 4.2 K for d∼3 mm. The curve E ^PGE(H) at room temperature is determined with allowance for the strong transverse magnetoresistance of the nanostructure. Pis’ma Zh. éksp. Teor. Fiz. 63, No. 3, 197–202 (10 February 1996)     

Manifestation of asymmetry in the spin-phonon coupling line in nonresonant paramagnetic absorption

A theory of nonresonant paramagnetic absorption in concentrated paramagnets in which the spin-phonon coupling (SPC) line is asymmetric relative to the center of the magnetic-resonance line is developed on the basis of a two-temperature Provotorov model. It is shown that the strong asymmetry of the SPC line results in a second absorption peak at low frequencies, together with the peak characteristic for the Debye curve. It is established that this effect is due to the appearance of a second “cross” term, as a result of the asymmetry of the SPC line, in the relaxational evolution of the Zeeman and non-Zeeman low-frequency temperatures. Fiz. Tverd. Tela (St. Petersburg) 39, 522–524 (March 1997)     

Role of electron “lakes” in the negative magnetoresistance effect in the region of Mott hopping conductivity

It is shown for doped and compensated germanium that the appearance of negative magnetoresistance under the conditions of Mott hopping conductivity may be due to the presence of a nonuniform spatial distribution of the electron density, the temperature at which the effect appears apparently being determined by the temperature at which the electron gas condenses into electron “lakes.” A “dead zone” effect was also observed in weak magnetic fields, the threshold field increasing with the nonuniformity of the electron distribution. Pis’ma Zh. éksp. Teor. Fiz. 63, No. 3, 187–191 (10 February 1996)     

Atomic structure and transport and magnetic properties of the Sm1−x SrxMnO3 system

This is the first study of the temperature dependences of the atomic structure by neutron diffraction, as well as of the resistivity, differential magnetic susceptibility, and magnetoresistance of the ceramic system ¹⁵⁴Sm_1−x Sr_xMnO₃ (x∼0.16–0.4). Samples (x⩾0.3) having an initially orthorhombic structure transfer upon cooling from the insulating to the metallic state and exhibit giant magnetoresistance, which at liquid-helium temperature reaches as high as 90% in magnetic fields up to 30 kOe. At lower doping levels (x⩽0.25), the compound has monoclinic structure. The resistivity of such compounds in zero magnetic field displays insulating behavior upon lowering the temperature to 77 K. Fiz. Tverd. Tela (St. Petersburg) 40, 1271–1276 (July 1998)     

Orbital and spin effects in the low-temperature behavior of the magnetoresistance of doped CdTe crystals

An observation of the suppression of negative magnetoresistance in samples of doped CdTe that are far from the metal-insulator transition as the temperature is lowered in the temperature range 3–0.4 K was previously reported [N. V. Agrinskaya, V. I. Kozub, and D. V. Shamshur, JETP 80, 1142 (1995)]. The results of an investigation of samples that are closer to the transition in the low-temperature region below 36 mK are presented. It is discovered that the samples investigated (which do not exhibit the suppression of negative magnetoresistance at comparatively high temperatures) display this effect at low temperatures and that, as previously, the suppression of the negative magnetoresistance correlates with the transition to conduction via Coulomb-gap states. A plateau-like magnetoresistance feature is displayed at low temperatures for the sample that is closest to the metal-insulator transition. The results obtained are analyzed within existing theoretical models that take into account the role of both the orbital and spin degrees of freedom. In particular, the low-temperature feature indicated is interpreted as a manifestation of positive magnetoresistance caused by spin effects. Nevertheless, it is shown within a detailed analysis supplemented by numerical calculations that the observed suppression of the negative magnetoresistance cannot be attributed only to the appearance of spin positive magnetoresistance. Moreover, the possibility of observing spin positive magnetoresistance is determined to a certain extent specifically by the suppression of the negative magnetoresistance competing with it. Zh. éksp. Teor. Fiz. 111, 1477–1493 (April 1997)     

Comparison of negative magnetoresistance mechanisms in manganese perovskites and chromium spinels

A transition of the field dependence of the electrical resistivity from a square law (∼H ²) above T _c to a linear function (∼H) below T _c is observed in the degenerate ferromagnetic semiconductor HgCr₂Se₄(n). Together with the large negative magnetoresistance, these magnetoelectric effects correspond to effects observed in the perovskite-type oxides La_1−x Ca _x MnO _δ . Inasmuch as the undoped semiconductor HgCr₂Se₄ is a ferromagnet with approximately the same critical temperature as the doped semiconductor and in view of the total lack of data on the Jahn-Teller effect in this compound, we infer that our results cast doubt on existing hypotheses (polaron and binary exchange) regarding the origin of the giant magnetoresistance in La_1−x Ca _x MnO _δ . Impurity sd scattering is discussed as a possible magnetoresistance mechanism for both compounds. Fiz. Tverd. Tela (St. Petersburg) 41, 1800–1803 (October 1999)     

Hall effect and negative magnetoresistance in thin crystals of NbSe<Subscript>3</Subscript>

We have measured the Hall effect and the transverse magnetoresistance in NbSe₃ single crystals. In the liquid helium temperature range we observed an absolute negative magnetoresistance (NMR) — the value of the resistance under magnetic field being much lower than that at zero field — in NbSe₃ single crystals with a thickness less than 5 μm with the magnetic field oriented in the (b, c) plane. We show that this NMR effect is observed in the magnetic field range in which the Hall constant changes its sign. The results are qualitatively explained by the change of the surface scattering contribution to the magnetoconductance in the magnetic field range near the Hall voltage zero crossing.     

Anisotropic momentum transfer in low-dimensional electron systems in a magnetic field

In low-dimensional systems with an asymmetric quantizing potential, an asymmetric electron energy spectrum ε(p)≠ε(−p), where p is the electron momentum, arises in the presence of a magnetic field. A consequence of such an energy spectrum is that momentum transfer to the electron system in mutually opposite directions in the presence of an external perturbation is different. Therefore, in the presence of a standing electromagnetic wave momentum is transferred from the wave to the electrons, which gives rise to a new type of electromotive force. Pis’ma Zh. éksp. Teor. Fiz. 66, No. 8, 551–555 (25 October 1997)     

Colossal magnetoresistance of the Sm1−x SrxMnO3 system

The results of investigating the temperature dependence of the resistivity, the differential magnetic susceptibility, and the magnetoresistance of a partially substituted perovskite Sm_1−x Sr_xMnO₃ (x=0.16–0.4) are presented. Colossal intrinsic magnetoresistance, reaching 90% in an external magnetic field of 30 kOe, is discovered in the compound with x=0.30 at 77 K. Fiz. Tverd. Tela (St. Petersburg) 39, 1831–1832 (October 1997)     

Preparation, magnetoresistance and magnetocaloric effect of two-layered perovskite La 2.5- x K 0.5+ x Mn 2 O 7+δ

Polycrystalline two-layered perovskite La_2.5-xK_0.5+xMn₂O _{7 + δ} (0 < x < 0.5) samples have been prepared by a modified sol-gel method and their magnetoresistance and magnetocaloric effects have been studied. A large deviation between the metal-insulator (MI) transition temperature (T _ρ ) and the magnetic transition temperature (T_C) is observed. Large magnetoresistance (MR) effects with Δρ/ρ of ∼40% at 12 kOe are obtained in wide temperature ranges. The maximum of the magnetic entropy change peaks at its Curie temperature (T_C), far above its MI transition temperature (T _ρ ). The large magnetic entropy change (∼1.4 J/kg.K) is obtained in the sample La_2.5-xK_0.5+xMn₂O _{7 + δ} (x = 0.35) upon 10 kOe applied magnetic field. Received 2 May 2002 / Received in final form 1st October 2002 Published online 19 December 2002 RID="a" ID="a"e-mail: wzhong@ufp.nju.edu.cn     

Giant domain walls in a ferromagnet

Giant domain walls with a width of ∼7 μm are observed on the surface of a ferromagnet — an amorphous magnetically soft alloy. A magnetooptic investigation shows that the walls have a Néel structure in the subsurface region. The subsurface structure of these walls differs substantially from that of the narrower walls previously observed in iron, Permalloy, and amorphous materials. According to the theoretical model of Scheinfein and co-workers, which relates the width of an asymmetric Bloch wall in the bulk with the width at the surface, the width of the wall in the bulk is estimated to be 3–4 μm. Pis’ma Zh. éksp. Teor. Fiz. 70, No. 8, 528–530 (25 October 1999)     

Description of the Colossal Magnetoresistance of La 1.2 Sr 1.8 Mn 2 O 7 Based on the Spin-Polaron Conduction Mechanism in the Ferromagnetic Temperature Range

We have analyzed the resistance of La1.2Sr1.8Mn2(1 – z)O7 single crystal in magnetic fields from 0 to 90 kOe in the ferromagnetic temperature range. The observed magnetoresistance of La1.2Sr1.8Mn2O7 is described based on the spin-polaron conduction mechanism. The magnetoresistance is determined by the change in the sizes and magnetic moment directions of magnetic inhomogeneities (polarons). It is shown that the colossal magnetoresistance is ensured by an increase (along the magnetic field) of the polaron linear size. It is found using the method for separating the contributions of different conduction mechanisms to the magnetoresistance that the contribution to the magnetoresistance from the orientation mechanism at 80 K in low magnetic fields is close to 50%. With increasing magnetic field, this contribution decreases and becomes small in fields exceeding 30 kOe. The comparable contributions to the conductivity from the orientational and spin-polaron mechanisms unambiguously necessitate the inclusion of both conduction mechanisms in the magnetoresistance calculations. We have calculated the temperature variation of the polaron size (in relative units) in zero magnetic field and in a magnetic field of 90 kOe.     

Galvanomagnetic properties of Hg1−x MnxTe1−y Sey semimagnetic semiconductors

The galvanomagnetic properties of single crystals of the semimagnetic semiconductors Hg_1−x Mn_xTe_1−y Se_y with 0.01<y<0.1 and x=0.05 and 0.14 in the temperature range 4.2–300 K are investigated. The features of the temperature dependence of the Hall coefficient R _H and the complicated behavior of R _H in a magnetic field are attributed quantitatively to the existence of three groups of current carriers, viz., electrons and two types of holes, for which the temperature dependences of the densities and mobilities are obtained. A transition from p-type to n-type conductivity is observed as the Se content is increased, and the negative magnetoresistance simultaneously gives way to positive magnetoresistance. Zh. éksp. Teor. Fiz. 112, 1809–1815 (November 1997)     

Mechanism of giant magnetoresistance in intermetallic compounds of rare-earth ions and actinides

Giant positive or negative magnetoresistance is calculated in a band model. The spectra of the band electrons in a two-sublattice antiferromagnetic intermetallic compound depend on the antiferromagnetism vector L(T,H). The metamagnetic transition to the ferromagnetic phase is accompanied by splitting with respect to the spin σ, displacement of the energy bands, and a decrease in the effective masses of the band electrons. This mechanism of giant negative magnetoresistance is also accompanied by an increase in the relaxation time τ_jσ. Scattering by chemical-bond fluctuations is considered as the main relaxation mechanism. Giant positive magnetoresistance results from a four-subband model of 4f and 5f intermetallic compounds. The electron effective masses m _jσ(J _jT ) of the (j,σ) bands increase with the mean angular momentum J _1T (T,H) of an ion in the jth sublattice of 4(5)f ions. The thermodynamics of such a four-sublattice model, the nonlinear magnetization and magnetoresistance curves, and the nonmonotonic dependence of the specific heat C _m(T,H) on the field H are calculated. Fiz. Tverd. Tela (St. Petersburg) 39, 1806–1814 (October 1997)     

Undamped self-oscillations and dynamical chaos under conditions of impurity breakdown of a semiconductor in the fixed-current regime

It is shown theoretically that chaotic oscillations of the Hall field, the Hall constant, and the magnetoresistance appear in a compensated semiconductor under impurity breakdown conditions. It is shown that the transition to chaos occurs via the Feigenbaum scenario. Pis’ma Zh. éksp. Teor. Fiz. 67, No. 5, 340–343 (10 March 1998)     

Giant magnetoresistance of vanadium films with a surface magnetic superlattice

Giant (up to 68%) room-temperature magnetoresistance is observed in (110) V films on mica with a periodic system of 5–25 nm wide, thin (⩽10 nm) Co strips, separated by 1–2 nm gaps, grown on the films. The effect is observed only for samples in which the magnetization tilts out of the plane of the film. Pis’ma Zh. éksp. Teor. Fiz. 64, No. 5, 346–349 (10 September 1996)     

Ultranarrow beams of electromagnetic radiation in media with a Kerr nonlinearity

The vector structure of a self-channeling electromagnetic field is determined by solving the complete system of Maxwell’s equations in a transparent medium with a Kerr nonlinearity. Self-channelling with an asymmetric angular distribution of the field occurs at powers several times the critical self-focusing power. As the power is increased, a universal (self-similar) field structure develops in which only the scales change as the power is varied. Self-channelling with a channel width much smaller than the (linear) wavelength of the light, i.e., a “needle of light” with an extreme concentration of radiant power, is found to occur. Zh. éksp. Teor. Fiz. 116, 458–468 (August 1999)