On scattering of slow particles by a “weak” 2D potential

The problem of elastic scattering of low-energy particles by a “weak” 2D potential U without an axial symmetry is considered. The expression for the scattering amplitude is found in this approximation, and it is shown that at U < 0 it has a pole at the energy E ₀ of the corresponding weakly bound state. An explicit expression in terms of the potential U is derived for the factor refining the known order-of-magnitude estimate for E ₀.     

Electron screening in backward elastic scattering

Abstact: The elastic scattering cross sections, σ (E,θ), for the systems He+Ta and He+W have been measured at θ_lab=165° and E _lab=76.1 keV to 3.988 MeV using targets with a thickness of a few atomic layers. The results are smaller than the results given by the Rutherford scattering law, σ_R(E,θ), due to the effects of electron screening and can be described by σ(E,θ)/σ_R(E,θ)=(1+U_e/E)⁻¹, where U _e is an atomic screening potential energy. The deduced average value, U _e=28 ± 3 keV, is consistent with the Moliére- and Lenz-Jensen-models as well as electron binding energies. Received: 25 May 1998     

New Approach to Quantum Scattering Near the Lowest Landau Threshold for a Schrödinger Operator with a Constant Magnetic Field

 For a fixed magnetic quantum number m results on spectral properties and scattering theory are given for the three-dimensional Schr?dinger operator with a constant magnetic field and an axisymmetrical electric potential V. Asymptotic expansions for the resolvent of the Hamiltonian H _m  = H _om  + V are deduced as the spectral parameter tends to the lowest Landau threshold E ₀. In particular it is shown that E ₀ can be an eigenvalue of H _m . Furthermore, asymptotic expansions of the scattering matrix associated with the pair (H _m , H _om ) are derived as the energy parameter tends to E ₀. Received December 11, 2000; accepted in final form June 16, 2001 Published online June 10, 2002     

Bethe-Salpeter equation with the sine-Gordon interaction

An attempt is made to study the interaction Hamiltonian,H _int =Gψ ²(x)U(φ(x)) in the Bethe-Salpeter framework for the confined states of theψ particles interactingvia the exchange of theU field, whereU(φ) = cos (gφ). An approximate solution of the eigenvalue problem is obtained in the instantaneous approximation by projecting the Wick-rotated Bethe-Salpeter equation onto the surface of a four-dimensional sphere and employing Hecke’s theorem in the weak-binding limit. We find that the spectrum of energies for the confined states,E =2m+B (B is the binding energy), is characterized byE ∼n ⁶, wheren is the principal quantum number.     

Binary and multiparticle electron-electron interaction on the surface

It is shown for the first time that electron-electron scattering of slow electrons with an energy of 10–50 eV at the surface of some metals is mainly an event of binary scattering of particles with conserved total momentum and energy, while analogous scattering at the surface of a semiconductor (n-Si) and an insulator (MgO) is a multiparticle event. A model is proposed, in which the electron subsystem of a solid is characterized by short-range order. Each electron is at the center of a spherical cell and surrounded by nearest neighbors (electrons) with a coordination number of 12. The overlap of the fields of charges gives rise to a negative potential U _c (r) ≈ U _c , which is virtually constant along the coordinate and contains spherical cells with a central field U(r) of individual charges. The value of constant negative potential U _c depends on the extent of electron screening, which is high for metals and low for semiconductors and insulators. In metals, scattering governed by the binary mechanism may take place (i.e., scattering of a primary electron in the central field of an electron of the metal); this is ensured by a relatively small value of constant potential U _c . The electron subsystem of the metal behaves as a Fermi gas of weakly interacting quasiparticles. Electron screening in semiconductors and insulators is insignificant, and constant negative potential U _c is an order of magnitude higher than the analogous potential in metals. Slow primary electrons are scattered in the total field of many charges before they reach the central field of an individual electron. The electron subsystem of a semiconductor and an insulator in the excitation range studied here behaves as an ensemble of strongly interacting particles.     

Pressure-tuned resonance Raman scattering and photoluminescence studies on MBE grown bulk GaAs at theE 0 gap

Hydrostatic pressure has been used to tune in resonance Raman scattering (RRS) in bulk GaAs. Using a diamond anvil cell, both the photoluminescence peak (PL) and the 2 LO and LO-phonon Raman scattered intensities have been monitored, to establish RRS conditions. When theE ₀ gap of GaAs matchesħω _S orħω _L, the 2 LO and LO-phonon intensity, respectively, exhibit resonance Raman scattering maxima, at pressures determined byħω _L. With 647.1 nm radiation (ħω _L = 1.916 eV), a sharp and narrow resonance peak at 3.75 GPa is observed for the 2 LO-phonon. At this pressure the 2 LO-phonon goes through its maximum intensity, and falls right on top of the PL peak, revealing thatħω _S(2 LO) =E ₀. This is the condition for “outgoing” resonance. Experiments with other excitation energies (ħω _L) show, that the 2 LO resonance peak-pressure moves to higher pressure with increasingħω _L, and the shift follows precisely theE ₀ gap. Thus, the 2 LO RRS is an excellent probe to follow theE ₀ gap, far beyond the Γ-X cross-over point. A brief discussion of the theoretical expression for resonance Raman cross section is given, and from this the possibility of a double resonance condition for the observed 2 LO resonance is suggested. The LO-phonon resonance occurs at a pressure whenħω _L ≈E ₀, but the pressure-induced transparency of the GaAs masks the true resonance profile.     

dt, d3He, and pα scattering in the vicinity of the 5He* and 5Li* resonances

It is shown that the simplest strong-interaction models (those that employ the Breit boundary condition and a delta-function potential) involving only three free parameters describe adequately the properties of the dt and d ³He systems in the vicinity of the ⁵He*(3/2⁺) and ⁵Li*(3/2⁺) resonances—that is, at energies in the regions E≲3E _C and E≲2E _C where E _C is the corresponding Coulomb energy. For these systems, the complex values of the scattering length, of the effective range, and of the shape parameter are extracted from experimental data on the reaction cross section and proton polarization in pα scattering (in the case of the d ³He system). The astrophysical function is extrapolated to the low-energy region (0≤E<0.1E _C), which is of importance for thermonuclear investigations, but which is hardly accessible to direct measurements. __________ Translated from Yadernaya Fizika, Vol. 66, No. 1, 2003, pp. 89–99. Original Russian Text Copyright ? 2003 by Kulik, Mur.     

Anomalies in orientation interaction of slow neutrons with nuclei and the problem of neutron molecule existence

Based on the Dirac equation, the features of long-range electromagnetic orientational interaction of slow neutrons with even-even and even-odd nuclei are considered. This interaction is controlled by a narrow potential barrier arranged beyond the nucleus. The barrier height is U _tot = 20–40 eV and depends on Z, A, and the nucleus magnetic moment μ_nucl. The barrier formation is associated with the ponderomotive nonlinear interaction of the anomalous neutron moment with the nucleus electric field. The barrier transparency for thermal neutrons is D(E) ≈ 0.8–0.95. For cold neutrons, the barrier transparency and their reaction cross sections with nuclei sharply decrease and, at E → 0, their cross sections tend toward zero. It was shown that the combined effect of the magnetic dipole-dipole and ponderomotive interaction of the neutron and even-odd nucleus results in the formation of removed symmetrically positioned potential wells for neutrons beyond the nucleus. The presence of these wells results in the possible existence of short-lived or virtual nucleus-neutron molecules and the “neutron halo” effect beyond the nucleus.     

The ground state problem in the infinite-U Hubbard model

The problem of the ground state of the electronic system in the Hubbard model for U=∞ is discussed. The author investigates the normal (singlet or nonmagnetic) N state of the electronic system over the entire range of electron densities n⩽1. It is shown that the energy of the N state ɛ ₀ ⁽¹⁾ (n) in a one-particle approximation, such as (e.g.) the extended Hartree-Fock approximation, is lower than the energy of the saturated ferromagnetic FM state ɛ _FM(n) for all n. The dynamic magnetic susceptibility is calculated in the random phase approximation, and it is shown that the N state is stable over the entire range of electron densities: The static susceptibility (ω=0) does not have a band singularity in the zero-wave vector limit q→0. A formally exact representation is obtained for the mass operator of the one-particle Green’s function, and an approximation of this operator is proposed: M _k(E)⋍λF(E), where λ=n(1−n)/(1−n/2)z is the kinematic interaction parameter, z is the number of nearest neighbors, and F(E) is the total single-site Green’s function. For an elliptical density of states the integral equation for F(E) is solved exactly, ad it is shown that the spectral intensity rigorously satisfies the sum rule. The calculated energy of the strongly correlated N state ɛ ₀(n)<ɛ _FM(n) for all n, and in light of this relationship the author discusses the hypothesis that the ground state of the system is the normal (singlet) state in the thermodynamic limit. The electron distribution function at T=0 differs significantly from the Fermi step; it is “smeared” along the entire energy spectrum, and discontinuities do not occur in the region of the chemical potential m. Fiz. Tverd. Tela (St. Petersburg) 39, 193–203 (February 1997)     

Ion flux's pressure dependence in an asymmetric capacitively coupled rf discharge in NF<Subscript>3</Subscript>

Starting from an analytical macroscopic/phenomenological model yielding the self-bias voltage as a function of the absorbed radio-frequency (rf) power of an asymmetric capacitively coupled discharge in NF₃ this paper studies the dependence of the ion flux onto the powered electrode on the gas pressure. An essential feature of the model is the assumption that the ions' drift velocity in the sheath near the powered electrode is proportional to E ^α, where E=−ΔU (U being the self-bias potential), and α is a coefficient depending on the gas pressure and cross section of elastic ion-neutral collisions. The model also considers the role of γ-electrons, stochastic heating as well as the contribution of the active electron current to the global discharge power balance. Numerically solving the model's basic equations one can extract the magnitude of the ion flux (at three different gas pressures) in a technological etching device (Alcatel GIR 220) by using easily measurable quantities, notably the self-bias voltage and absorbed rf power.     

Half-shellT matrix for Coulomb-modified Graz separable potential

We construct a closed form expression for the off-shell Jost function for scattering by the Coulomb-distorted Graz separable potential and express it in the ‘maximal reduced form’. Our result is particularly suitable for numerical computation. We present a case study in support of this and examine the role of Coulomb interaction in thep — p half-shell scattering in the¹ S ₀ channel.     

Detection of surface defects under low-energy scattering

Computer simulation of Ga⁺ ion (E ₀ = 40–100 eV) scattering on a GaAs film with defects in the form of vacancies and K⁺ ions (E ₀ = 40–300 eV) on a V-target containing cerium has been carried out in the framework of the multiparticle interaction model. The simulation results show that low-energy scattering can be used as a tool for detection of surface defects.     

Square-well nuclear-potential depths and bound energy states from neutron scattering data

Using the neutron scattering lengths b determined experimentally for a majority of isotopes in last decades, one can in principic extract systematic information on some nuclear properties of elements. A significant “scatter” of experimental values of the (related to b) nuclear radius R around the “classical” dependence R = r ₀ A ^1/3, where A is the mass number, is intriguing and requires a special attention. In this work, on extending the use of known formulas of the theory of neutron scattering on nucleus represented by a rectangular radial symmetry potential well (or barrier), we have determined the depths V ₀ of the potential well and for many isotopes the position of the bound-state energy level E _b in the well. The “scatter” mentioned above can be in part attributed to the four types of the s-type wave functions of slow neutron interacting with nucleus, which appear in this model. In several cases the bound-state energy level is close to the Fermi E _F level of the free-nucleon model of nuclear matter of the constant density, independent of A.     

Generation of the Ultracold Muonic Hydrogen Flux

We present the study of μp atom scattering in solid hydrogen. Anomalously large emission of E _pμ≤1.9 meV μp's from a solid H₂ layer was observed for the first time. This three times greater μp atom yield is due to non-elastic phonon scattering. As a result, it becomes possible to generate an ultracold flux of μp atoms. The recent calculations of the total and differential cross sections agree with all experimental results of μp atom scattering in solid H₂. This revised version was published online in August 2006 with corrections to the Cover Date.     

Evolution of the electronic properties of transition metal nanoclusters on graphite surface

The electronic properties of nanoclusters of transition (Ni, Co, Cr) and noble (Au, Cu) metals deposited on the surface of highly oriented pyrolytic graphite (HOPG) are studied using the method of X-ray photoelectron spectroscopy. The laws of variation of a change ΔE _b in the binding energies of core-level electrons in the initial (ΔE _i) and final (ΔE _f) states of atoms in nanoclusters, the intrinsic widths γ of photoelectron lines, and their singularity indices α as functions of the metal cluster size d are determined. A qualitative difference in behavior of the ΔE _i(d) and α(d) values in metals of the two groups (Ni, Cr versus Co, Cu) is found. The values of the final-state energy (ΔE _f < 0) and the line width (Δγ > 0) in the clusters of all metals studied vary in a similar manner. It is shown that a significant contribution to E _i is due to a transfer of the valence-shell electrons at the cluster-substrate interface, which is caused by the contact potential difference. The value of an uncompensated charge per nanocluster is determined as a function of the cluster size and the number of atoms in the cluster. The behavior of ΔE _f(d) is controlled by the Coulomb energy of a charged cluster and by a decrease in the efficiency of electron screening, which is different in the metals studied. The broadening of photoelectron lines is determined by a spread of the cluster sizes and by lower electron screening in the final Fermi system. An asymmetry of the core-level electron spectra of nanoclusters can be explained using notions about the electron-hole pair excitation near the Fermi level. The effect of the structure of the density of electron states in the d band of transition metals on the asymmetry of photoelectron lines is considered and it is concluded that this structure near the Fermi level qualitatively changes with a decrease in the nanocluster size. The obtained results indicate that the behavior of the electron subsystem of clusters of the d-metals in a size range of 2–10 nm under consideration is close to the behavior of a normal Fermi system.     

Stimulated polariton-polariton scattering and dynamic Bose-Einstein condensation of polaritons in GaAs microcavities under excitation near the exciton resonance

The dynamics of formation of the macroscopically occupied polariton mode at the bottom of the polariton band E _LP(k = 0) and its spin polarization under the quasiresonant pulse excitation of excitons (E = E _X ) with large values of quasi-momentum have been studied in planar GaAs microcavities. It has been found that the growth in the depth E _X − E _LP(k = 0) of the polariton band leads to the change in the formation mechanism for the k = 0 condensate state from the direct parametric decay of the photoexcited mode (due to the polariton-polariton interaction) to the dynamic condensation of polaritons, which results from the multiple scattering of polaritons by both phonons and polaritons. At the same time, in microcavities with E _X − E _LP(k = 0) > 3.5 meV, the direct decay of the photoexcited mode does not disappear, becoming an efficient mechanism for the filling of the states located at the k-space ring, corresponding to the energies E _LP(k) ≈ E _X − 2.6 meV.     

Embedding euclidean lie algebras into quantum structures

We show that it is possible to express the basis elements of the Lie algebra of the Euclidean group,E(2), as simple irrational functions of certainq deformed expressions involving the generators of the quantum algebraU _q (so(2, 1)). We consider implications of these results for the representation theory of the Lie algebra ofE(2). We briefly discess analogous results forU _q (so(2, 2)). Presented at the 6th International Colloquium on Quantum Groups: “Quantum Groups and Integrable Systems”, Prague, 19–21 June 1997.     

Bounds on the Minimal Energy of Translation Invariant N-Polaron Systems

For systems of N charged fermions (e.g. electrons) interacting with longitudinal optical quantized lattice vibrations of a polar crystal we derive upper and lower bounds on the minimal energy within the model of H. Fröhlich. The only parameters of this model, after removing the ultraviolet cutoff, are the constants U > 0 and α > 0 measuring the electron-electron and the electron-phonon coupling strengths. They are constrained by the condition ${\sqrt{2}\alpha < U}For systems of N charged fermions (e.g. electrons) interacting with longitudinal optical quantized lattice vibrations of a polar crystal we derive upper and lower bounds on the minimal energy within the model of H. Fr?hlich. The only parameters of this model, after removing the ultraviolet cutoff, are the constants U > 0 and α > 0 measuring the electron-electron and the electron-phonon coupling strengths. They are constrained by the condition ?2a < U{\sqrt{2}\alpha < U}, which follows from the dependence of U and α on electrical properties of the crystal. We show that the large N asymptotic behavior of the minimal energy E _N changes at ?2a = U{\sqrt{2}\alpha=U} and that ?2a ￡ U{\sqrt{2}\alpha\leq U} is necessary for thermodynamic stability: for ${\sqrt{2}\alpha > U}${\sqrt{2}\alpha > U} the phonon-mediated electron-electron attraction overcomes the Coulomb repulsion and E _N behaves like −N ^7/3.     

Electroluminescent characteristics of InGaAsSb/GaAlAsSb heterostructure Mid-IR LEDs at high temperatures

The electroluminescent characteristics of an InGaAsSb/GaAlAsSb heterostructure LED emitting at 1.85 μm are studied in the temperature range 20–200°C. It is shown that the emission power exponentially drops as P ≅ 0.4exp(2.05 × 10³/T) with a rise in temperature primarily because of an increase in the Auger recombination rate. It is found that band-to-band radiative recombination goes in parallel with recombination through acceptor levels, the latter causing the emission spectrum to broaden. With a rise in temperature, the activation energy of the acceptor levels decreases by the law ΔE≅ 32.9 − 0.075T and the maximum of the LED’s emission spectrum shifts toward the long-wavelength range (hν _max = 0.693 − 4.497 × 10⁻⁴ T). Based on the dependence E _g = hν _max − 0.5kT and experimental data, an expression is derived for the temperature variation of the bandgap in the In_0.055Ga_0.945AsSb active area, E _g ≅ 0.817 − 4.951 × 10⁻⁴ T, in the range 290 K < T < 495 K. The resistance of the heterostructure decreases exponentially with rising temperature as R ₀ ≅ 5.52 × 10⁻²exp(0.672/2kT), while cutoff voltage U _cut characterizing the barrier height of a p−n junction decreases linearly with increasing temperature (U _cut = −1.59T + 534). It is found that the current through the heterostructure is due to the generation-recombination mechanism throughout the temperature interval.