Si(100)表面Se薄膜生长及其在Ti/Si欧姆接触中的应用

本文采用分子束外延(MBE)系统在Si(100)表面淀积Se薄膜. 通过控制衬底和固态Se束源炉的温度,实现了Se材料在Si(100)表面上的自限制超薄薄膜生长;在Se超薄层钝化的Si(100)表面上制备的Ti金属电极具有低的欧姆接触电阻特性,且热稳定性温度提升至400 ℃. 关键词： 硒 钝化 欧姆接触 热稳定性     

Transition from tunneling regime to local point contact realized on Ba_(0.6)K_(0.4)Fe_2As_2 surface

Using scanning tunneling spectroscopy, we studied the transition from tunneling regime to local point contact on the iron-based superconductor Ba_(0.6)K_(0.4)Fe_2As_2. By gradually reducing the junction resistance, a series of spectra were obtained with the characteristics evolving from single-particle tunneling into Andreev reflection. The spectra can be well fitted to the modified Blonder–Tinkham–Klapwijk(BTK) model and exhibit significant changes of both spectral broadening and orbital selection due to the formation of point contact. The spatial resolution of the point contact was estimated to be several nanometers, providing a unique way to study the inhomogeneity of unconventional superconductors on such a scale.     

Investigating lanthanide dopant distributions in Yttrium Aluminum Garnet (YAG) using solid state paramagnetic NMR

This paper demonstrates the approach of using paramagnetic effects observed in NMR spectra to investigate the distribution of lanthanide dopant cations in YAG (yttrium aluminum garnet, Y₃Al₅O₁₂) optical materials, as a complimentary technique to optical spectroscopy and other standard methods of characterization. We investigate the effects of Ce³⁺, Nd³⁺, Yb³⁺, Tm³⁺, and Tm³⁺-Cr³⁺ on ²⁷Al and ⁸⁹Y NMR spectra. We note shifted resonances for both AlO₄ and AlO₆ sites. In some cases, multiple shifted peaks are observable, and some of these can be empirically assigned to dopant cations in known configurations to the observed nuclides. In many cases, AlO₆ peaks shifted by more than one magnetic neighbor can be detected. In general, we observe that the measured intensities of shifted resonances, when spinning sidebands are included, are consistent with predictions from models with dopant cations that are randomly distributed throughout the lattice. In at least one set of ²⁷Al spectra, we identify two sub-peaks possibly resulting from two paramagnetic cations with magnetically coupled spin states neighboring the observed nucleus. We identify systematic changes in the spectra related to known parameters describing the magnetic effects of lanthanide cations, such as larger shift distances when the expectation value of electron spins is greater. We lastly comment on the promise of this technique in future analyses of laser and other crystalline oxide materials.     

含氮氟化类金刚石(FN-DLC)薄膜的研究：(Ⅲ)疏水性能分析

不同沉积条件下，在单晶硅基底上沉积了含氮氟化类金刚石(FN-DLC)薄膜，用静滴接触角/表面张力测量仪测量了水与FN-DLC膜表面的接触角.用X射线光电子能谱、Raman光谱和傅里叶变换吸收红外光谱(FTIR)分析了薄膜的组分和结构.用原子力显微镜观测了薄膜的表面形貌.结果表明，FN-DLC薄膜疏水性能主要取决于薄膜表面的化学结构、薄膜表面极化强度的强弱、以及薄膜的表面粗糙度的大小.sp³/sp²的比值减小，CF₂基团含量增加，薄膜粗糙度增加，接触角增大；反之，则接触角减小.在工艺上，沉积温度和功率的减小，气体流量比r(r=CF4/［CF₄+CH₄］)的增加，都会使水的浸润性变差，接触角增大. 关键词： 氟化类金刚石膜 疏水性 接触角     

钛－镍－硅固相反应形成的镍硅化物/n-硅(100)接触的I-V-T研究

在不同退火温度下，有一薄层钛覆盖层的镍－硅经过固相反应生成了镍硅化物/n-硅(100)接触，研究了其在80K到室温的电流－电压（I-V）特性。低温I-V曲线在低偏压区的电流显著地比传统的热电子发射（TE）模型预计的要大。用基于Tung的夹断模型简化得到的双肖特基势垒模型分析了实测的I-V曲线，从中可以得到肖特基势垒不均匀性的量度。较高温度退火导致较大的势垒不均匀性，意味着硅化物薄膜均匀性的变坏。钛覆盖薄层可以稍微提高硅化镍的相转变温度，以及形成的一硅化镍的热稳定性。     

Electrical properties of nanointerface at poly(3-hexylthiophehe) and metal junctions probed directly with potential tip

Electrical properties at the nanointerfaces of head-to-tail coupled poly(3-hexylthiophene), PHT and metals (Au, Al) in sandwich type Al/PHT/Au diodes have been investigated using a nanomanipulator with the potential probing tip. It has been directly found that the highly insulating layer and the appreciable contact resistance are formed at Al/PHT with the thickness of several tens nanometer and PAT/Au, respectively. The bias dependence of the interface resistances at Al/PHT shows the origin of rectification. It has also been found that the interface resistance at PAT/Au is unexpectedly large, though the current–voltage behavior is ohmic. The results indicate the contact resistances between PHT and metals at the nanometric region are important factors to determine the diode performance.     

牺牲Ni退火对硅衬底GaN基发光二极管p型接触影响的研究

本文通过在硅衬底发光二极管(LED)薄膜p-GaN表面蒸发不同厚度的Ni覆盖层,将其在N₂ ∶O₂=4 ∶1的气氛中、400℃—750℃的温度范围内进行退火,在去掉薄膜表面Ni覆盖层之后制备Pt/p-GaN欧姆接触层.实验结果表明:退火温度和Ni覆盖层厚度均对硅衬底GaN基LED薄膜p型欧姆接触有重要影响,Ni覆盖退火能够显著降低p型层中Mg受主的激活温度.经牺牲Ni退火后,p型比接触电阻率随退火温度的升高呈先变小后变大的规律,随Ni覆盖层厚度的增加呈先变小后变 关键词： 氮化镓 发光二极管 牺牲Ni退火 p型接触     

低覆盖度的Au/GaN(0001)界面的同步辐射研究

利用同步辐射光电子能谱研究了低覆盖度Au在GaN(0001)表面的初始生长模式,肖特基势垒高 度以及界面的电子结构.结果表明，Au沉积初始阶段有界面的化学反应,随后呈三维岛状生长 .由光电子能谱实验确定的肖特基势垒高度为14 eV. 通过对界面价带谱和Au 4f芯能级谱 的分析,确定了界面化学反应的存在.利用线性缀加平面波方法计算了GaN(0001)和Au的价带 态密度并分析了化学反应产生的机理,认为在初始阶段界面形成了Au_Ga合金. 关键词： 同步辐射 光电子能谱 Au/GaN欧姆接触 态密度     

Surface Modification of Poly (ether ether ketone) with a Medlite C6 (ND-YAG Q-Switched) Skin Treatment Laser

Poly ether ether ketone (PEEK), a synthetic polymer, is expected to be useful as a biomaterial due to its appropriate mechanical, chemical, and biocompatibility properties. However, this polymer is biologically inert, requiring surface modification to improve its adhesion to bone cells for use as a bone substrate. Surface properties, such as roughness and hydrophilicity, are important factors in the adhesion of biomaterials to the surrounding tissue; therefore, in this study, laser treatment was performed for surface modification. The aim of the research described here was to investigate the effect of two laser parameters, fluency and wavelength, on the surface roughness and hydrophilicity to determine the optimum parameters for improving surface adhesion. The surface topography and average roughness (R_a) were investigated by atomic force microscopy (AFM). Surface morphology was also observed with an optical microscope, and the hydrophilicity of the surfaces was investigated with static contact angle tests. The results obtained showed that the samples treated at the wavelength of 532?nm with fluency of 8?J/cm², compared to fluencies of 4 and 12?J/cm², showed improved surface properties. However, in terms of radiation wavelength, the wavelength of 1064?nm at these three fluencies showed the most promising results for enhancing the surface properties of PEEK for bone implant applications.     

Characterization of N-doped ZnO layers grown on (0 0 0 1) GaN/Al2O3 substrates by molecular beam epitaxy

We investigated the optical properties and electrical properties of N-doped ZnO layers grown on (0 0 0 1) GaN/Al₂O₃ substrates by molecular beam epitaxy, employing 10 K photoluminescence (PL) measurements, current–voltage (IV) measurements, capacitance–voltage (CV) measurements, and 100 K photocapacitance (PHCAP) measurements. 10 K PL spectra showed that excitonic emission is dominant in N-doped ZnO layers grown after O-plasma exposure, while overall PL emission intensity is significantly reduced and deep level emission at around 2.0 2.2 eV is dominant in N-doped ZnO layers grown after Zn exposure. IV and CV measurements showed that N-doped ZnO layers grown after Zn exposure have better Schottky diode characteristics than O-plasma exposed samples, and an N-doped ZnO layer grown at 300 °C after Zn exposure has best Schottky diode characteristics. This phenomenon is presumably due to lowered background electron concentration induced by the incorporation of N. PHCAP measurements for the N-doped ZnO layer revealed several midgap trap centers at 1.2 1.8 eV below conduction band minimum.     

Electrochemical control of surface wettability of poly(3-alkylthiophenes)

The effect of n-alkyl side-chain length on water contact angle with films in neutral and electrochemically doped states are studied. Increasing the side-chain from butyl to hexyl to octyl increases the contact angle of water on conjugated polymer films in both electrochemical states, but decreases the difference in angle between the states in the same film. Devices based on these films have potential application in, for example, guiding water and other liquids through microfluidic channels in lab-on-a-chip and micro-electro-mechanical (MEM) applications.     

Transparent conducting indium-tin-oxide (ITO) film as full front electrode in III-V compound solar cell

The application of transparent conducting indium-tin-oxide (ITO) film as full front electrode replacing the conventional bus-bar metal electrode in III-V compound GaInP solar cell was proposed. A high-quality, non-rectifying contact between ITO and 10 nm N⁺-GaAs contact layer was formed, which is benefiting from a high carrier concentration of the terrilium-doped N⁺-GaAs layer, up to 2×10¹⁹ cm^-3. A good device performance of the GaInP solar cell with the ITO electrode was observed. This result indicates a great potential of transparent conducting films in the future fabrication of larger area flexible III-V solar cell.     

接触构型及电极距离对4,4’-二巯基二苯醚分子电输运性质的影响

利用从头计算方法和弹性散射格林函数的方法,对4,4'-二巯基二苯醚分子电输运特性的研究结果显示,分子与电极之间接触点的构型以及两电极之间的距离对4,4'-二巯基二苯醚分子的电输运性质都有很大影响.电流随电极距离的变化与耦合系数的变化存在着密切关系.分子末端硫原子处于金原子的顶位上时电流的开启电压很小,而处在金(111)面的空位上时约有1.0V左右电流禁区.与实验结果相比,硫原子更可能处在金(111)面的空位上方.     

Spin polarization measurements of Co2Mn (Ga0.5Sn0.5) thin films

Co₂MnGa_0.5Sn_0.5 (CMGS) thin films were epitaxially grown on MgO (0 0 1) substrates by magnetron sputtering and the current spin polarizations of the films with different post annealing conditions were measured by the point contact Andreev reflection method. The film deposited at a substrate temperature of 150 °C had a B2 structure and its spin polarization was estimated to be 59%. The film was ordered to the L2₁ structure by annealing at 600 °C, and the spin polarization was enhanced to 66%. The spin polarization and the intensity of the L2₁ diffraction showed clear correlation, suggesting L2₁ ordering is essential to achieve higher spin polarization of this quaternary Heusler alloy.     

Influence of interface states,conduction band offset,and front contact on the performance of a-SiC:H(n)/c-Si(p)heterojunction solar cells

P-type silicon heterojunction(SHJ) solar cells with a-SiC:H(n) emitters were studied by numerical computer simulation in this paper. The influence of interface states, conduction band offset, and front contact on the performance of a-SiC:H(n)/c-Si(p) SHJ solar cells was investigated systematically. It is shown that the open circuit voltage(V_(oc)) and fill factor(F F) are very sensitive to these parameters. In addition, by analyzing equilibrium energy band diagram and electric field distribution, the influence mechanisms that interface states, conduction band offset, and front contact impact on the carrier transport, interface recombination and cell performance were studied in detail. Finally, the optimum parameters for the a-SiC:H(n)/c-Si(p) SHJ solar cells were provided. By employing these optimum parameters, the efficiency of SHJ solar cell based on p-type c-Si was significantly improved.     

Interfacial reaction and electrical characteristics of Cu(RuTaNx) on GaAs: Annealing effects

This study elucidates the thermal stability and quasi ohmic contact characteristics of Cu(RuTaN_x) fabricated on a barrierless GaAs substrate. Cu(RuTaN_x) was prepared by cosputtering Cu, Ta, Ru, and N. The resistivity of the Cu(RuTaN_x)/GaAs structure annealed at 500 °C for 30 min was lower than that of the as-deposited structure, and the former was thermally stable up to 500 °C after 30 min of annealing. Further, the Cu(RuTaN_x)/GaAs structure exhibited electrical rectifying properties upon annealing at 550 °C for 10 min and revealed a quasi ohmic contact, as determined by the circular transmission line model (CTLM). The formation of quasi ohmic contact is further confirmed by transmission electron microscopy and energy dispersive X-ray spectroscopy.     

Study of the pulsed laser vapor doping of Si(1 0 0) with KrF excimer laser and BCl3 gas

The properties of pulsed laser vapor doping on p-Si(1 0 0) with a KrF (248 nm) excimer pulsed laser (248 nm) and BCl₃ gas are reported in this paper. The doped samples are characterized by the resistance measured using a four-probe method, since the sheet resistance changes with the carrier concentration of the sample. The doping effects with the variation of laser energy density, pulse number, and the pressure of BCl₃ were investigated in terms of the sheet resistance. In this way, the optimized parameters were obtained and used for the positive heavy doping on p-Si(1 0 0) and p-Si(1 1 1). Then, using a square mesh under the above conditions, an image doping was completed. Finally, the metal–semiconductor Ohmic contacts were realized by plating Ag and Cu films on the doped surface.     

Thickness optimization of Mo films for Cu（InGa）Se2 solar cell applications

Mo thin films are deposited on soda lime glass (SLG) substrates using DC magnetron sputtering. The Mo film thicknesses are varied from 0.08 μm to 1.5 μm to gain a better understanding of the growth process of the film. The residual stresses and the structural properties of these films are investigated, with attention paid particularly to the film thickness dependence of these properties. Residual stress decreases and yields a typical tensile-to-compressive stress transition with the increase of film thickness at the first stages of film growth. The stress tends to be stable with the further increase of film thickness. Using the Mo film with an optimum thickness of 1 μm as the back contact, the Cu(InGa)Se2 solar cell can reach a conversion efficiency of 13.15%.     

Effect of thermal annealing on ohmic contacts properties of undoped and Si-doped AlxGa1−xN on Si (1 1 1) substrate grown by PA-MBE

In this work, we study the ohmic contact properties of titanium (Ti)/aluminum (Al) bi-layer contacts on undoped and n-type doped Al_xGa_1−xN grown on silicon (1 1 1) substrates by radio frequency nitrogen plasma-assisted molecular beam epitaxy (PA-MBE). The electrical stability of the contacts at various annealing temperatures of 400, 500, 600 and 700 °C were investigated. Specific contact resistivity was determined using transmission line method (TLM) and current–voltage (I–V) measurements. The results reveal that the bi-layer scheme was sensitive to the change of annealing temperatures and annealing time. The optimal value of specific contact resistivities was obtained at annealing temperature of 600 °C for both samples. However, the values of n-type doped sample exhibited better results compared with the undoped sample.     

Calculation of current–voltage characteristics of a Cu (II) complex/n-Si/AuSb Schottky diode

In this study, Cu (II) complex/n-Si structure has been fabricated by forming a thin organic Cu (II) complex film on n-Si wafer. It has been seen that the structure has clearly shown the rectifying behaviour and can be evaluated as a Schottky diode. The contact parameters of the diode such as the barrier height and the ideality factor have been calculated using several methods proposed by different authors from current–voltage (I–V) characteristics of the device. The calculated barrier height and ideality factor values from different methods have shown the consistency of the approaches. The obtained ideality factor which is greater than unity refers the deviation from ideal diode characteristics. This deviation can be attributed to the native interfacial layer in the organic/inorganic interface and the high series resistance of the diode. In addition, the energy distribution of the interface state density (N_ss) in the semiconductor band gap at Cu (II) complex/n-Si interface obtained from I–V characteristics range from 2.15 × 10¹³ cm⁻² eV⁻¹ at (E_c − 0.66) eV to 5.56 × 10¹² cm⁻² eV⁻¹ at (E_c − 0.84) eV.