The conductivity and the longitudinal sound attenuation above the peierls transition point

We explain the anomalous peak of the conductivity by applying the pinning mechanism at T = 0 to the case above the Peierls transition temperature. The longitudinal sound attenuation coefficient (α_L) is calculated also. The sound is attenuated essentially through a pair of charge density wave fluctuations.     

Mössbauer studies of the charge-density-wave state of 57FeK0.30MoO3

Mössbauer studies have been performed between 6 K and 300 K on single crystals of ⁵⁷Fe-doped K_0.30MoO₃, which show a Peierls transition at 180 K towards on incommensurate charge density wave state. The spectra show three doublets. A strong line broadening below 120 K indicates that the Fe impurities are strong pinning centers for the charge density wave above ∼ 120 K and become progressively weak pinning ones below, in agreement with theoretical models.     

On the nonlinear charge density wave conductivity of TaS3

The conductivity of the charge-density-wave semiconductor TaS₃ is shown to consist of temperature dependent ohmic, and field dependent but temperature independent, contributions at temperatures below the Peierls transition T_P = 215 K. The field dependent conductivity can be described by a tunneling formalism proposed by Bardeen.     

Energy spectrum of excitations in quasi-one-dimensional conductors with a charge-density wave

A well-formed energy gap Δ is observed in the energy spectrum of the quasi-one-dimensional orthorhombic conductor TaS₃ at temperatures much lower than the Peierls transition temperature T _P . As the temperature increases, in the region T>T _P /2 there is a growth of the density of states in the gap and a relative decrease of the density at energies greater than Δ. In addition, absorption lines which probably correspond to soliton states in a charge-density wave are observed in the gap. Pis’ma Zh. éksp. Teor. Fiz. 63, No. 4, 246–250 (25 February 1996)     

Coherent tunneling between elementary conducting layers in the NbSe3 charge-density-wave conductor

Characteristic features of transverse transport along the a* axis in the NbSe₃ charge-density-wave conductor are studied. At low temperatures, the I–V characteristics of both layered structures and NbSe₃-NbSe₃ point contacts exhibit a strong peak of dynamic conductivity at zero bias voltage. In addition, the I–V characteristics of layered structures exhibit a series of peaks that occur at voltages equal to multiples of the double Peierls gap. The conductivity behavior observed in the experiment resembles that reported for the interlayer tunneling in Bi-2212 high-T _c superconductors. The conductivity peak at zero bias is explained using the model of almost coherent interlayer tunneling of the charge carriers that are not condensed in the charge density wave.     

Features of charge density waves in quasi-one-dimensional conductors at low temperatures

The reported study of charge density waves at low temperatures is based on a microscopic theory. One feature of a charge density wave at low temperatures is a large shift in the chemical potential near its defects, such as solitons, dislocations, and pinning centers, which leads to a higher conductivity of material along chains when the charge density wave is immobile, and the wave dynamics is controlled by this shift. Equations describing the dynamics of a charge density wave have been derived and used to estimate the velocity of 2π-solitons along conducting chains. The resulting soliton mobility has proved to be low and makes a small contribution to the conductivity. The large shift in the chemical potential near strong pinning centers can lead to a considerable increase in linear conductivity along conducting chains. Zh. éksp. Teor. Fiz. 111, 1494–1512 (April 1997)     

Depinning by thermal fluctuations of the charge density wave in Peierls Fröhlich state

It is shown that the thermal fluctuations depin the charge density wave of the Peierls Fröhlich state pinned by impurities at absolute zero temperature. The critical temperature, T_d, of this depinning is estimated as $\text{T}{}_{\mathrm{d}}\text{= 0.55√}\text{m}{}^1\text{mγ}{}_0$ where m¹ and γ₀ are the mass of the collective mode and the pinning frequency at T = 0.     

Rigidity of charge density wave current under inhomogeneous conditions in the blue bronze Rb0.3MoO3

The narrow band voltage oscillation due to sliding charge density wave domains in the blue bronze Rb_0.3MoO₃ is shown to be unaffected by a variation of temperature along the sample. This proves the non-local nature of the relation between charge density wave velocity, driving electric field and temperature. The largest temperature gradient applied would give rise to a broadening equal to about 30 times the bandwidth of the oscillation investigated, were the charge density wave velocity determined by a local relation.     

Features of the melting dynamics of a vortex lattice in a high-T c superconductor in the presence of pinning centers

The phase transition “triangular lattice-vortex liquid” in layered high-T _c superconductors in the presence of pinning centers is studied. A two-dimensional system of vortices simulating the superconducting layers in a high-T _c Shubnikov phase is calculated by the Monte Carlo method. It was found that in the presence of defects the melting of the vortex lattice proceeds in two stages: First, the ideal triangular lattice transforms at low temperature (≃3 K)into islands which are pinned to the pinning centers and rotate around them and then, at a higher temperature (≃8 K for T _c 584 K), the boundaries of the “islands” become smeared and the system transforms into a vortex liquid. As the pinning force increases, the temperatures of both phase transitions shift: The temperature of the point “triangular lattice-rotating lattice” decreases slightly (to ≃2 K)and the temperature of the phase transition “rotating lattice-vortex liquid” increases substantially (≃70 K). Pis’ma Zh. éksp. Teor. Fiz. 66, No. 4, 269–274 (25 August 1997)     

DC Conductivity and Peierls instability in the quasi-one-dimensional organic charge density wave conductor (fluoranthene)2X

Due to the high anisotropy of the dc conductivity (σ_|/σ_⊥ ≈ 10⁴) the organic conductor (fluoranthene)₂X can be regarded as a model system for studying the Peierls instability in quasi-one-dimensional systems. The temperature dependence of the dc conductivity σ_| (T) along the highly conducting crystal axis exhibits the typical behaviour of a quasi-one-dimensional metal with a Peierls transition at about 180 K to a charge density wave (CDW) ground state. As expected for a highly one-dimensional conductor the exact transition temperature depends on three-dimensional coupling effects and therefore on the size of the counterion X^? = PF, AsF, SbF. Above the Peierls transition σ_| (T) can be described quantitatively within a model of CDW fluctuations leading to a pseudo gap in the electronic density of states. Below, the existence of a real energy gap at the Fermi level with a BCS-like temperature dependence determines the charge transport over more than eight orders of magnitude in the electrical resistance. For the intrinsic energy gaps 2 Δ (0), which characterize the ground state of the Peierls semiconductor, values of 120-180 meV have been found for different crystals.     

Mechanism of conduction in TTF and TMTSF organic conductors from a study of their vibrational spectra

The charge transfer complexes of organic donors TTF and TMTSF have been prepared and studied with infrared spectroscopy. The nature of transition has been studied by analyzing features of absorption. TTF-TCNQ was found to be a Peierls semiconductor and not metallic. This shows that the mean field transition temperature is operative in TTF-TCNQ. TMTSF-TCNQ and TMTSF-DDQ showed lesser band gap than that of TTF-TCNQ. TTF-DDQ and TTF-I₂ also showed very small band gap and were more conducting than TTF-TCNQ. The band gaps could be assigned to either the Peierls gap or the pinning gap of charge density waves.     

Properties of strained TaS<Subscript>3</Subscript> samples in the state of charge density wave and in the normal state

The uniaxial strain of quasi-one-dimensional conductor whiskers of orthorhombic TaS₃ at a strain higher than ε _c ~ 0.8% leads to a sharp increase in the coherence of the properties of a charge density wave (CDW), which manifests itself in its motion in fields higher than threshold field E _t . During uniaxial elongation, TaS₃ is shown to exhibit the following unusual properties even in weak fields: Peierls transition temperature T _P depends nonmonotonically on ε, one-dimensional fluctuations weaken near T _P , and the coherence length of a charge density increases at T < T _P . Investigations in fields higher than E _t show that the ultracoherent properties of CDW exist in a wide temperature range and are retained when temperature increases up to T _P . These properties of CDW make it possible to observe a sharp increase in E _t near T _P and an almost jumplike increase in E _t at T < 90 K. The increase in E _t at T _P is explained by a decrease in the coherence volume of CDW because of a fluctuational suppression of the Peierls gap.     

Photo-induced enhancement of charge density wave current in the quasi-one-dimensional conductor TaS3

In the near vicinity of Peierls transition temperature T_P, we have measured the V-I characteristics of the quasi-one-dimensional conductor TaS₃ under dark and photo-irradiation conditions. It is found that a significant enhancement of CDW current occurs only around the threshold voltage V_t under photo-irradiation. This effect can be interpreted as a result of screening of pinning potential for CDW condensate by photo-excited quasi-particles (QP's). Further the distribution of pinning potential intensity is reflected in the behavior of V-I characteristics near V_t. Our finding suggests that the strength of pinning potential can be controlled by the photo-excited QP's in quasi-1D conductors.     

Low-temperature scanning electron microscopy for studying inhomogeneities in thin-film high-T c superconductors

Low-temperature scanning electron microscopy can provide important information on the local superconducting properties of thin-iilm high-T _c superconductors. The principle of this method is outlined, including the spatial resolution limit. The spatial variations observation of the local values of the critical temperature and of the critical current density represent highly important applications of this method. The spatial variations of flux pinning and flux flow can be also studied.     

Electric field dependent dielectric function in NbSe3

Dielectric function of quasi-one-dimensional conductor NbSe₃ has been measued in the vicinity of Peierls transition near T_p=145K by use of novel technique. The low frequency noise in V/I/ characteristics is attributed to the Gaussian type of position fluctuations of pinned charge density wave (CDW) and fundamental frequency of the noise is found to be identical with spring frequency of restoring forces.     

Dielectric constant and threshold electric field of charge-density-waves with strong impurity pinning

The dielectric constant ε and the threshold electric field E_T for the onset of charge-density-wave conduction are investigated within the phenomenological model proposed by Tua and Zawadowski for the strong pinning regime. The static dielectric constant ε (E) in a bias electric field E is found to be almost independent of E provided that E is not too close to E_T. For relatively small values of the pinning strength, the product ε E_T becomes independent of the parameters of the theory. Good agreement is found with the available experimental data on NbSe₃ for the case of strong pinning obtained by radiation damage.     

柠檬酸掺杂的MgB2超导体钉扎机理的研究

本文研究了柠檬酸掺杂的MgB₂超导材料的J_c-B行为及其钉扎机理.在纯MgB₂多晶样品中,δT_c钉扎起主要作用,而在掺杂的样品中,则是δl钉扎和δT_c钉扎共同作用,并且δl钉扎机理占主要作用,其贡献比重随着掺杂量的增加而增加.从J_c-B行为和钉扎行为的分析都可以得到 关键词： 柠檬酸 2')" href="#">MgB₂ T_c钉扎')" href="#">δT_c钉扎 l钉扎')" href="#">δl钉扎     

Energy gap of a charge density wave in NbSe3 induced by a high magnetic field above the Peierls transition temperature

The effect of a magnetic field on the energy gap of the charge density wave (CDW) in NbSe₃ near the temperature T _p2 of the lower Peierls transition has been investigated using interlayer tunneling spectroscopy. It has been shown that the magnetic field increases the energy gap and can even induce it at temperatures higher than T _p2 by 15–20 K. As the field strength increases, the peak amplitude of the gap singularity of the tunneling spectrum first increases, reaches its maximum at 20–30 T, and then decreases. The increase in the gap peak amplitude is attributed to the field-induced improvement of the condition of the CDW nesting, while the decrease in the amplitude in high fields, to the breakdown of the ground state caused by its Zeeman splitting.     

Interplay among superconductivity,charge density waves,and magnetism in EuMo6S8

In a one-dimensional metal, the energy of the electrons can always be lowered by opening an energy gap around the Fermi energy (the Peierls instability): all occupied states are then in the lower-energy band, while the higher-energy band is empty. The opening of such a gap requires a structural distortion, resulting in the formation of a charge density wave. In a three-dimensional system, the gapping takes place in the region where the Fermi surface is nested (i.e., large parallel areas of the Fermi surface are spanned by a certain wave vector), giving rise to partial gapping of the Fermi surface, accompanied by a structural distortion. In this case, a charge density wave can coexist with superconductivity. Both charge-density-wave and superconducting transitions involve the formation of an energy gap at the Fermi energy. A charge-density-wave gap is formed at a region of the Fermi surface where there is a high density of electronic states. In such a material, there is also a strong electronphonon interaction. A region with high density of states and a high electron-phonon interaction is just the portion of the Fermi surface that will enhance the superconducting transition temperature, according to the BCS (Bardeen-Cooper-Schrieffer) theory. When a charge-density-wave gap opens up at the Fermi surface these electronic states are no longer available to form Cooper pairs and to enhance the superconducting transition temperature. The opposite is also true; if a superconducting gap opens, the states involved in forming this gap are no longer available to take part in a charge-density-wave transition. It appears that charge density waves and superconductivity compete for the same portion of the Fermi surface and thus inhibit each other. In this paper, we will review a unique situation with respect to the competition between these two ground states and will also discuss how this competition affects the anomalous behavior of critical field in EuMo6S, at high pressure.     

Local impurity phase pinning and pinning force in charge density waves

Starting from the static Fukuyama-Lee-Rice equation for a three-dimensional incommensurate charge density wave (CDW) in quasi one-dimensional conductors a solvable model for local phase pinning by impurities is defined and studied. We find that average CDW energy and average pinning force show critical behaviour with respect to the pinning parameter h. Specifically the pinning force exhibits a threshold at h=1 with exponent . Our model exemplifies a general concept of local impurity pinning in which the force exerted by the impurity on the periodic CDW structure becomes multivalued and metastable states appear beyond a threshold. It is found that local impurity pinning becomes less effective at low temperatures and may eventually cease completely. These results are independent of spatial dimensionality as expected for local impurity pinning. Comparison with Larkin's model is also made. Received 8 July 1998