Soliton Photoconduction in the Charge-Density-Wave Conductor Orthorhombic TaS3

JETP Letters - The effect of uniaxial strain on low-temperature conduction and photoconduction of the Peierls conductor orthorhombic TaS3 is studied. A consistent increase in the conductance and...     

Crystal Size Effects in the Raman Spectra of Orthorhombic Hydrogen Halide Crystals

The Raman spectra of the stretching regions of the orthorhombic forms of hydrogen chloride and hydrogen bromide are found to depend on the method of crystal growth. The significance of this in connection with the interpretation of crystallographic and spectroscopic data is discussed.     

X-Ray Luminescence of Defects in Spinel Single Crystals

The flareup of x-ray luminescence in spinel single crystals (MgAl₂O₄) depending on the time of x-ray irradiation and the decay of fluorescence depending on the time elapsed after the termination of irradiation have been investigated. These dependences were measured at different powers of the irradiation dose (power of the x-ray tube) and at different temperatures of the samples. The experimental results suggest the existence of large-size complexes of defects, which include antisite defects and impurity ions, the exchange of charge carriers between which during and after irradiation leads to luminescence of the impurity ions. Transfer of charge carriers between isolated elements of the pairs of antisite defects (not interacting with the impurity ions) leads to the formation of a competing channel of recombination luminescence in the UV region of the spectra. The decay of fluorescence attributable to transitions in the Mn²⁺ and Cr³⁺ ions depending on the time elapsed after the termination of x-ray irradiation points to the existence of various combinations of antisite defects in the surroundings of these ions.     

Bi_2Sr_2CaCu_2O_(8+δ)单晶的钉扎力标度和磁通钉扎机制

测量了 Bi2 Sr2 Ca Cu2 O8+δ单晶不同温度下的磁化曲线。根据 Bean临界态模型得到了不同温度下的钉扎力密度 FP 对磁场的依赖关系 ,发现在不同温度下的钉扎力密度可以标度在同一条曲线上。标度函数和最大钉扎力所对应的磁场与不可逆场 Hirr的比值都表明 Si2 Sr2 Ca Cu2 O8+δ单晶在磁通玻璃态的钉扎机制主要是正常相面钉扎。     

Localization of Excitons on Planar Defects in Semiconductor Crystals

JETP Letters - Motivated by recent experimental and computational investigations of bilayer, hydrogenated and fluorinated graphene, we apply the formalisms of U(1) quantum electrodynamics and SU(2)...     

新型荧光探针光猝灭的光物理机制含时密度泛函理论计算

3-羟基黄酮(3-HF)是二代新型荧光分子探针的典型代表,用高精度的量子化学计算方法—密度泛函理论对3-羟基黄酮的光物理机制进行研究。计算了3-羟基黄酮分子在理想状态下的最优构型,电荷布居和激发光谱。得到3-羟基黄酮荧光的发射光谱,从而分析出3-羟基黄酮分子内质子转移的光物理循环图,解释其光物理机制。通过与实验值的对比,计算所得分子构型合理有效,激发光谱谱峰位置切合实际。该工作只是用量子化学计算方法在分子荧光探针领域进行光物理响应机制分析的初步探索,可以为该领域提供有价值的理论参考。     

含有多缺陷的一维光子晶体的完全透射及应用

计算了具有多缺陷且相对中间缺陷具有镜像对称结构的一维光子晶体的透射谱。在光子晶体的禁带中得到了多个完全透射峰且对称性地分布于禁带中心频率两侧。缺陷相距较近时，禁带中心不存在透射峰。所有透射峰都敏感地依赖于中间缺陷的折射率。     

面缺陷对三维胶体晶体光学性质的影响

利用化学自组装方法和旋涂技术,成功地将二氧化硅(SiO2)微球体植入聚苯乙烯微球组成的蛋白石中,获得了嵌有面缺陷的三维胶体晶体.经SiO2渗透后,煅烧除去聚苯乙烯微球,获得了反相结构的光子晶体.胶体球粒直径增大时,无论晶体中有无缺陷态的存在,蛋白石及其反相结构透射谱中峰的位置发生红移,反之则产生蓝移.在胶体球粒直径一定时,对于降低折射率的缺陷,其透射谱峰中缺陷态的位置发生红移;对于增加折射率的缺陷,其透射谱峰中缺陷态的位置发生蓝移.透射谱还与缺陷层的厚度等因素有关.     

Multifrequency ESR Characterization of Paramagnetic Point Defects in Semiconducting Cubic BN Crystals

Low-frequency (X-band) electron spin resonance (ESR) investigations on commercially available large-grained cubic boron nitride (cBN) superabrasive powders of various coloration, combined with high-frequency (W-band) ESR measurements on oriented submillimeter-size single crystallites selected from the same powder samples, resulted in a clear identification of several types of paramagnetic point defects. The resulting spin Hamiltonian parameters describing the ESR spectra observed in the 3–293 K temperature range and the photosensitivity of the paramagnetic defects observed in amber-colored cBN samples are reported. It is shown that the nature of the paramagnetic centers depends on the color of the investigated samples and that, in many cases, uncontrolled impurities seem to be involved in their structure.     

The Role of Oxygen Containing Impurities in Defects Formation in Cesium Halide Crystals

The dependence of defect formation efficiency in CsI single crystals both on the type of oxygen containing impurities and the value of the absorbed irradiation dose was studied. Correlative results were obtained under investigation by methods of ionic thermocurrent (ITC), thermostimulated exoemission (TSEE), electrical conductivity and optical spectroscopy. The peculiarities of defect formation in γ-irradiated CsI-CO₃(SO₄, OH) and X-irradiated CsI-OH single crystals are discussed.     

A New Method for the Measurement of Thickness in Single Crystals

A new method for thickness determination of single-crystal thin samples at exact zone axis orientation, based on pattern recognition in convergent beam electron diffraction (CBED), is presented. The method is especially well suited to materials with a large unit cell in zone axis directions where the reciprocal lattice is uniformly dense with diffraction points. The new method is based on comparison of a measured CBED zone axis pattern with a set of calculated ones. Its accuracy was estimated to be around 10% in the 5–100 nm thickness range as checked for garnets at the [111] zone orientation.     

荧光熄灭法测定维生素K3针剂中甲萘醌的含量

本文利用荧光熄灭法对维生素K3针剂中甲萘醌含量的测定进行了研究，工作结果表明：荧光熄灭法测定甲萘醌较常规的VK3针剂分析方法快速、准确，相对标准偏差小于3％，回收率在96％－102％。     

Fabrication of Two-Dimensional Photonic Crystals with Controlled Defects by Combination of Holographic Lithography and Two-Photon Polymerization

A new ternary photopolymer system is used in fabricating photonic crystals （PhCs） with controlled defects by combination of single-photon and two-photon photopolymerization. The former process can produce PhCs in one-step recording with a low-power （tens mW） continuous-wave laser at 532nm, while the latter can create desired defects. The preparation of the material, the optical setup and the preliminary experimental results are given. Compared with other methods, this approach is much more accessible and convenient for use of visible light and has advantages of making PhCs in a large scale quickly and economicaJly and introducing any defects exactly, especially for three-dimensional structures.     

Transition to 1D conduction with decreasing thickness of the crystals of TaS3 and NbSe3 quasi-1D conductors

It is found that, with decreasing thickness of the crystals of TaS₃ and NbSe₃ quasi-1D conductors, the dependences of the conductivity of these crystals on temperature and electric field change from the form typical of bulk samples to a nearly power law behavior typical of 1D electron systems.     

Quenching of Lanthanide Emission by Intervalence Charge Transfer in Crystals Containing Closed Shell Transition Metal Ions

The quenching of the luminescence originating from the excited states ³P₀ and ¹D₂ of Pr³⁺ and ⁵D₃ and ⁵D₄ of Tb³⁺ has been studied in oxide crystals containing closed shell transition metal ions, such as titanates, vanadates, niobates, and tantalates. It has been shown that the emission from these excited states can be quenched by an intervalence charge transfer mechanism. The temperature dependence of the emission intensities has allowed estimating indicative activation energies for the crossover to the intervalence charge transfer state. In the case of Tb³⁺, the quenching gives rise to relatively short decay times for the ⁵D₄ state.     

Dynamic properties of an incommensurate charge density wave in monoclinic TaS3 at low temperatures

The permittivity of monoclinic TaS₃, a quasi-one-dimensional conductor with an incommensurate charge density wave (CDW), as a function of frequency and temperature has been studied. At low temperatures and at frequencies below 1 MHz, the temperature dependence of the real part of the permittivity shows a maximum shift to lower temperatures with decreasing frequency. The temperature dependence of the relaxation time consists of two branches corresponding to macroscopic regions of CDWs with long and short relaxation times τ on the microscopic scale. With decreasing temperature, the growth of τ for large CDW regions is faster than thermal activation and shows a tendency to diverge at a finite temperature while the growth of τ due to the relaxation on the microscopic scale is slower than the activation rate. Our results show that with decreasing temperature the m-TaS₃ quasi-one-dimensional conductor goes over to a glasslike state due to the strong pinning of CDWs by randomly distributed impurities and the formation of mutually interacting solitary CDW collective excitations. Zh. éksp. Teor. Fiz. 111, 988–1000 (March 1997)     

Effect of S Substitution for P Point Defects in KDP Crystals： First-Principles Study

The electronic structure and geometric distribution of phosphor replaced by sulfur in potassium dihydrogen phosphate （KDP） are investigated by first-principles calculations. The point defect narrows down the energy gap to about 4.9eV, corresponding to a two-photon absorption of 355nm after correction. This can explain the decrease of the laser damage resistance in KDP crystals. Moreover, the defects twist the crystal structure and weaken bonds, especially the O-H bonds, so these bonds may be the first sites to crack under laser irradiation.