Electrophysical Properties along the Interface of Two Polymer Films of Polymethylmethacrylate

Physics of the Solid State - The electrical conductivity is studied along the interface between dielectric films of submicrometer thicknesses. The results of the comparative study of the...     

Dynamics of Polaron at Polymer/Polymer Interface

The migration of a polaron at polymer/polymer interface is believed to be of fundamental importance for the transport and light-emitting properties of conjugated polymer-based light emitting diodes. Based on the one- dimensional tight-binding Su-Schrieffer-Heeger （SSH） model, we have investigated polaron dynamics in a one- dimensional polymer/polymer system by using a nonadiabatic evolution method. In particular, we focus on how a polaron migrates through the conjugated polymer/polymer interface in the presence of external electric field. The results show that the migration of polaron at the interface depends sensitively on the hopping integrals, the potential barrier induced by the energy mismatch, and the strength of applied electric field which increases the polaron kinetic energy.     

Electroluminescence of a Polymer Film with a Polymer/Polymer Interface

JETP Letters - The effect of a two-dimensional quantum-confined structure formed at a polymer/polymer interface on the radiative recombination of excitons (i.e., electroluminescence) is...     

Photoconductivity of Ge/Si quantum dot photodetectors

Various structures of self-assembled Ge/Si quantum dot infrared photodetectors were implemented and investigated. The electronic structure of the QDIPs was studied by electrical and optical techniques including I–V characteristics, dark current, photoconductivity, photoluminescence, and photo-induced infrared absorption. The photoconductive spectra consist of a broad multi-peak, composed of peaks ranging from 70 to 220 meV. Their relative intensity changes with bias. Comparative dark current measurements were performed. Dark current limits the performance of this first generation of Ge/Si QDIPs. It is plausible that direct doping in the dot layer is a viable way of reducing the dark current.     

Photoconductivity and the structural phase transition in SrTiO3

Detailed photoconductivity measurements have been performed in nominally pure SrTiO₃ in order to elucidate the effect of the antiferrodistorsive cubic-tetragonal phase transition. Small features in the photoconductivity’s temperature dependence in the phase transition region were found using low intensity interband UV or 514 nm light illumination. Such features are associated with a transformation of the defect system controlling the photoconductivity. At the same time, the temperature behavior of the photoconductivity spectral maximum reveals a rather unusual feature which is connected with changes in the absorption band edge structure in the phase transition region.     

Photoconductivity in polyacetylene

The results of steady state photoconductivity experiments on cis- and trans-(CH)_x are interpreted in terms of charged solitons, photogenerated either directly (threshold hv = 4Δ/π) or indirectly through coupling of the lattice to electron-hole pair excitations (hv ? 2Δ). The transient photocurrent, after laser pulse excitation, decays as a power law, I(t) ? t^?0.6, suggesting dispersive transport of the photogenerated carriers.     

Photoconductivity spectra of HgCr2Se4

The photoconductivity spectra of ferromagnetic semiconductor HgCr₂Se₄ single crystals in the intrinsic transition region were measured at a number of fixed temperatures covering T_c = 106 K. The photoconductivity edge, 0.88 eV, at room temperature shifted to 0.35 eV at 52 K.The temperature dependence of the photoconductivity edge is in good correspondence with that of the absorption edge, and is explained qualitatively well with the calculated spin correlation functions in spinels.From the theoretical calculations by Kambara et al., the lowest transition associated with the photoconduction in HgCr₂Se₄ was interpreted to be the electronic transition from the highest d? to the lowest A [dγ-p] states for up-spin at X point. The many doby effects should be taken into account.     

Photoconductivity in the ordered vacancy compound CuIn5Se8

Thin films of the ordered vacancy compound CuIn₅Se₈ are deposited on glass substrates by multisource co-evaporation method and photoconductivity measurements are done on the films at various temperatures from 10 up to 300 K. The two photoactive bands that are identified in the spectral response spectra of CuIn₅Se₈ thin films at all measured temperatures are attributed to photoactive transitions between acceptor V_Cu to donor In_Cu and valence band to conduction band transitions respectively. From the spectra, a shift in band-to-band gap from 1.36 to 1.3 eV is observed with a temperature variation from 10 to 300 K. The non-exponential long-term decay observed in the transient photoconductivity spectra suggests a deep level trap-emptying process to be associated with the decay process and the decay constants are calculated by the differential life-time concept. From the steady state photocurrent analysis, a reduction in intergrain potential barrier on illumination has been noted as one reason for increase in conductivity on illumination. X-ray photoelectron spectroscopy analysis has been done to determine the binding energies of Cu, In and Se in the compound.     

Photoconductivity in the Ternary Layered Semiconductors

Spectral dependences of the photoconductivity, near-band-edge absorption were studiet at room and low temperatures for a number of TlInS2 and TlInSl2 type layered ternary chalcogenides. Some peculiarities in the temperature dependences of the spectral properties are assigned as due to a low temperature phase transition to an incommensurate and ferroelectric state. Temperature coefficients of the band gap for TlInSe2 are determined. Spectral properties of TlInS2 doped with Nd and Yb are also presented and discussed. It is shown that the long-wave lenght absorption edge of TlInS2 crystal obeys the Urbach's rule. High photosensitivity in the visible and near IR range of spectra makes these materials attractive for optoelectornics application.     

Self-magnetism and Persistent Photoconductivity

Persistent photoconductivity has been investigated by various models, among which the Macroscopic Barrier model, Large-Lattice-Relaxation model, and Random Local Potential Fluctuations model are mostly well known. Although the three well-known models have played important roles in describing the persistent photoconductivity, they are not the principal cause of persistent photoconductivity. In this paper a classical model originated from ＂selfmagnetism of electron gas＂ is proposed to illustrate the persistent photoconductivity phenomenon. This classical model is based on electron gas pulsation, which depends on the charge density. Different concentrations of current carriers create different frequencies in the system, and thus the system is sensitive to different wave lengths of incident light. Then the construction of different detectors can be possible for different wave lengths of incident light.     

Self-magnetism and Persistent Photoconductivity

Persistent photoconductivity has been investigated by various models, among which the Macroscopic Barrier model, Large-Lattice-Relaxation model, and Random Local Potential Fluctuations model are mostly well known. Although the three well-known models have played important roles in describing the persistent photoconductivity, they are not the principal cause of persistent photoconductivity. In this paper a classical model originated from “self-magnetism of electron gas” is proposed to illustrate the persistent photoconductivity phenomenon. This classical model is based on electron gas pulsation, which depends on the charge density. Different concentrations of current carriers create different frequencies in the system, and thus the system is sensitive to different wave lengths of incident light. Then the construction of different detectors can be possible for different wave lengths of incident light.     

Photoconductivity of erbium-doped germanium

We have applied the technique of Photo Thermal Ionization Spectroscopy (PTIS) to the study of an erbium-doped p-Ge epitaxial layer, grown by MBE on an undoped n-type germanium substrate. The Er-doped Ge layer shows continuum photoconductivity response in the far-infrared region extending from 70 cm^–1 to 900 cm^–1. This type of epitaxial Er-doped Ge layers is a potentially attractive system for photoconductivity detectors of far-infrared radiation. Below 900 cm^–1 three acceptor-like charged states can be distinguished with ionization energies of 9, 26.6 and 50 meV. Additionally, a study of the photoconductive response of the same sample for radiation from 1000 cm^–1 to 10000 cm^–1, i.e., for radiation energies well inside the forbidden gap to energies above it, shows a wealth of levels, some of which have previously been associated with erbium.On leave from: Instituto de Física, Universidad Autónoma de Puebla, Puebla, México     

Movement of Polymer Segments by Exciplex Emission of Pyrene and N,N-Dimethylaniline at the Polymer–Silica Interface

Intermolecular interaction between pyrenyl units linked on the silica surface and N,N-dimethylaniline (DMA) units of polymer segments coated on the silica was investigated. Exciplex emission between these units was observed. The spectral shape and the intensity of the exciplex emission depended on the sample preparative conditions. Emission decay curves had no rise components, which showed that preformed ground-state complexes between pyrene and DMA existed and there were various microenvironmental sites around the preformed complexes just after sample preparation. Annealing of the samples made the exciplex emission wavelength shift and its intensity increase, which meant that polymer segments that contacted with the silica surface moved to make the stable conformations during annealing. It was revealed that DMA units of polymer segments are more stable when they face to the polymer–silica interface than when they become part of the polymer bulk. After the samples were kept at room temperature for 1 month, the spectra of all the samples became the same, which showed that the most stable conformations of the polymer segments were at the polymer–silica interface.     

Influence of the Polymer/Inorganic Filler Interface on the Mechanical,Thermal, and Flame Retardant Properties of Polypropylene/Magnesium Hydroxide Composites

The relationship between the interface structure and the macroscopic properties of composites composed of isotactic polypropylene (iPP) and magnesium hydroxide (MH) was investigated with a focus on mechanical properties, thermal stability, and flame retardancy. Surface treatment of MH was carried out using dodecanoic acid (DA) and dodecylphosphate (DP), both of which interacted with MH to form submonolayer coverages. Fourier transform infrared spectroscopy (FTIR) and X-ray photoelectron spectroscopy (XPS) revealed that both organic reagents adhere to the MH surface via ionic interactions. Even low amounts of organic reagents on the MH surface were sufficient to improve the mechanical, thermal, and flame retardant properties of the composites. The incorporation of 1.8 wt% of DP in (70/30) iPP/MH-DP composite decreased the peak heat release rate (PkHRR) to 39% compared with that of neat iPP. Since the effects of DA with the same dodecyl chains were not significant, it is concluded that the phosphate groups in DP provide flame retardancy.     

Photoconductivity of Zn-doped GaN

GaN has been grown by the epitaxial technique from the gas phase, being doped by Zn during the growth. Highly compensated, high resistivity(>10⁸Ωcm) samples have been obtained. The photoconductivity has been studied between 2.9 and 3.6 eV. A structure ascribed to the presence of Zn is seen at about 3.2 eV and a theoretical curve for the photo-ionization cross section, using the theory of Lucovsky, has been fitted. This gives a low temperature value of 3.12 eV for the position of the Zn-associated acceptor below the conduction band. The temperature shift indicates that the level is pinned to the valence band.     

Photoconductivity of amorphous semiconductors

An analysis of photoconductivity is presented for a material with a carrier mobility which decreases as a power law with time. We calculate the steady state and transient response, and show that the model applies to hydrogenated amorphous silicon and other amorphous semiconductors. In a-Si:H the effective mobility is obtained from 10^?6 to 1 sec. The recombination is of bimolecular type and the carrier density is almost independent of excitation intensity.