高功率微波作用下O-离子解吸附产生种子电子过程

种子电子是高功率微波大气击穿的根源, 研究高功率微波大气击穿时, 一般假设背景大气中存在种子电子, 此假设在低层大气环境中会给模拟结果带来较大误差. 本文建立了高功率微波强电场作用下O^-离子解吸附碰撞过程物理模型, 基于传统的空碰撞模型, 提出了改进的蒙特卡罗仿真方法, 编写了三维仿真程序, 对高功率微波作用下O^-离子的解吸附过程进行了仿真, 分析了O^-离子平均能量随时间的变化过程以及O^-离子与空气分子的碰撞过程, 得到了不同压强、场强、频率和击穿体积条件下种子电子平均产生时间. 理论与仿真结果表明, 随着频率增大, 种子电子平均产生时间变大, 随着击穿体积、场强以及压强增大, 种子电子平均产生时间变小. 最后, 考虑O^-离子与空气分子解吸附碰撞提供种子电子条件下, 给出了大气击穿时间理论与实验对比结果, 发现高功率微波频率较低时, 该种子电子产生机理可以解释实验结果, 而高功率微波频率较高时, 该机理下种子电子平均产生时间过长而与实验数据不符.     

纳秒脉冲气体放电机理探讨

 经典Townsend机理和流注理论是气体放电研究的基础,但在解释纳秒脉冲气体放电时均存在一定缺陷。基于经典气体放电理论,探讨纳秒脉冲气体放电机理,分析流注理论判据在纳秒脉冲气体放电中的有效性,解释纳秒脉冲下电子逃逸现象和基于电子逃逸的快速电离波击穿理论,仿真计算高能快电子的逃逸过程。结果认为基于高能量快电子的逃逸击穿将是可能解释纳秒脉冲下气体放电现象的依据。     

Anisotropy and molecular rotation in resonant low-energy dissociative recombination

Angular fragment distributions from the dissociative recombination (DR) of HD(+) were measured with well directed monochromatic low-energy electrons over a dense grid of collision energies from 7 to 35 meV, where pronounced rovibrational Feshbach resonances occur. Significant higher-order anisotropies are found in the distributions, whose size varies along energy in a partial correlation with the relative DR rate from fast-rotating molecules. This may indicate a breakdown of the nonrotation assumption so far applied to predict angular DR fragment distributions.     

Stoletov constant and effective ionization potential of a diatomic gas molecule

Applying the dimension theory methods to the experimental data on static electric gas breakdown, we established the dependence of the empirical Stoletov constant on gas characteristics. This constant was shown to be 2.72 times larger than the energy expended by electrons to ionization of one gas particle (atom and molecule). Based on the analysis of elementary processes with participation of metastable levels of molecules and atoms under the optimum electron multiplication condition in a diatomic gas we concluded that the mean energy expended by the electrons to ionization of one molecule is the effective ionization potential of a gas molecule.     

Criterion for microwave breakdown of gases

An analytical criterion is obtained for microwave breakdown of gases that takes into account the different diffusion coefficients of electrons along and perpendicular to the direction of the electric field. Discharge ignition without electron attachment to the gas molecules and in electronegative gases is examined, along with microwave discharge ignition when a weak dc electric field is applied. Zh. Tekh. Fiz. 69, 25–29 (November 1999)     

Similarity law for a homogeneous discharge in the presence of a strong field and analogues of the Stoletov constant for the pulsed regime

It is demonstrated that the similarity relationships (breakdown curves), which establish a dependence of the field strength divided by the pressure on the product of the pressure and the delay time of the breakdown, are realized upon the uniform breakdown of the gas gap in the presence of both rectangular and triangular voltage pulses, which is interesting for the physics of gas and plasma discharges, and remain valid for strong fields. The breakdown criterion is described with a two-valued curve such that the effective multiplication of electrons in gas becomes possible in the presence of both weak and strong fields and at small products of the pressure and the pulse time. An analogue of the Stoletov effect, which corresponds to a maximum in the current with respect to pressure at a given voltage pulse, is demonstrated for the pulsed discharge. The analogues of the Stoletov constant are calculated for non-self-sustained pulsed discharges in various gases. The minimum delay time of the breakdown is also determined by these constants.     

Short-pulse high-power microwave breakdown at high pressures

The fluid model is proposed to investigate the gas breakdown driven by a short-pulse(such as a Gaussian pulse) highpower microwave at high pressures.However,the fluid model requires specification of the electron energy distribution function(EEDF);the common assumption of a Maxwellian EEDF can result in the inaccurate breakdown prediction when the electrons are not in equilibrium.We confirm that the influence of the incident pulse shape on the EEDF is tiny at high pressures by using the particle-in-cell Monte Carlo collision(PIC-MCC) model.As a result,the EEDF for a rectangular microwave pulse directly derived from the Boltzmann equation solver Bolsig+ is introduced into the fluid model for predicting the breakdown threshold of the non-rectangular pulse over a wide range of pressures,and the obtained results are very well matched with those of the PIC-MCC simulations.The time evolution of a non-rectangular pulse breakdown in gas,obtained by the fluid model with the EEDF from Bolsig+,is presented and analyzed at different pressures.In addition,the effect of the incident pulse shape on the gas breakdown is discussed.     

气体-表面相互作用的分子动力学模拟研究

采用分子动力学模拟方法研究了气体分子Ar在光滑和粗糙Pt表面上的散射规律.提出了一种速度抽样方法,计算了不同温度条件下气体分子对光滑和粗糙表面的切向动量适应系数和吸附概率.结果显示：光滑表面条件下,气体分子的切向动量系数和吸附概率都随着温度的升高而降低;粗糙度对气体分子切向动量与表面的适应具有极大的促进作用,当粗糙度足够大时,切向动量适应系数的大小趋近于1.0,对温度的敏感性也逐渐降低.采用粒子束方法对气体分子在光滑和粗糙表面上的散射规律进行了定量分析.总结了散射过程中气体分子的典型轨迹和动量变化规律,将气体分子在光滑表面的散射分为两种类型：单次碰撞后散射和多次碰撞后散射.单次碰撞后散射的气体分子平均切向动量有所减小,而经过多次碰撞后散射的气体分子则倾向于保持原有的平均切向动量.对于粗糙表面,粗糙度的存在使气体分子与表面间的动量和能量适应更加充分,导致气体分子在较粗糙表面上散射后的平均切向动量大幅减小并接近于0,且气体分子在表面上经历的碰撞次数越多,其散射后的能量损失越严重.     

A modification potential method of calculating total cross sections of electrons scattering from complex molecules C2H6, C2F6, C6H6 and C6F6 at 100 eV-5000 eV

A complex optical model potential modified by incorporating the concept of bonded atom, which takes into consideration the overlapping effect of electron clouds between two atoms in a molecule, is first employed to calculate the total cross sections for electrons scattering from such complex molecules as C总交叉断面 电子散射 添加规则 原子分子碰撞 电子云total cross section, electrons scattering, additivity rule, atomic and molecular collisionProject supported by the National Natural Science Foundation of China (Grant No 10574039).2005-11-102005-11-102005-11-30A complex optical model potential modified by incorporating the concept of bonded atom, which takes into consideration the overlapping effect of electron clouds between two atoms in a molecule, is first employed to calculate the total cross sections for electrons scattering from such complex molecules as C2H6, C2F6, C6H6 and C6F6 using the aclditivity rule model at Hartree-Fock level over the energy range from 100 eV to 5000 eV. The total cross sections are quantitatively compared with those obtained by experiments wherever available, and they are in good agreement with each other over a wide energy range. It is shown that the modified potential together with the additivity rule model is completely suitable for the calculation of total cross sections of electrons scattering from such complex molecules as C2H6, C2F6, C6H6 and C6F6 above 200 eV-300 eV.     

Runaway of electrons in dense gases and mechanism of generation of high-power subnanosecond beams

New understanding of mechanism of the runaway electrons beam generation in gases is presented. It is shown that the Townsend mechanism of the avalanche electron multiplication is valid even for the strong electric fields when the electron ionization friction on gas may be neglected. A non-local criterion for a runaway electron generation is proposed. This criterion results in the universal two-valued dependence of critical voltage U _cr on pd for a certain gas (p is a pressure, d is an interelectrode distance). This dependence subdivides a plane (U _cr , pd) onto the area of the efficient electron multiplication and the area where the electrons leave the gas gap without multiplication. On the basis of this dependence analogs of Paschen’s curves are constructed, which contain an additional new upper branch. This brunch demarcates the area of discharge and the area of e-beam. The mechanism of the formation of the recently created atomospheric pressure subnanosecond e-beams is discussed. It is shown that the beam of the runaway electrons is formed at an instant when the plasma of the discharge gap approaches to the runaway electrons is formed at an instant when the plasma of the discharge gap approaches to the anode. In this case a basic pulse of the electron beam is formed according to the non-local criterion of the runaway electrons generation. The role of the discharge gap preionization by the fast electrons, emitted from the plasma non-uniformities on the cathode, as well as a propagation of an electron multiplication wave from cathode to anode in a dense gas are considered.     

Deconvolution of loss features from electron spectra

The problem of deconvoluting loss features from energy spectra of electrons emitted from solids is investigated. A new formula is found for the case of an exponentially decreasing intensity from the solid surface of electron emitters. This as well as a formula for the case of a homogeneous distribution of electron emitters is studied in detail. Central in the formulas is the cross section for inelastic scattering. Under the assumption that angular deflection of electrons can be ignored the formulas are exact, i.e. the effect of all multiple scattering events is included. Through numerical calculations on Al spectra the effect of deconvolution is tested, and it is demonstrated that a small deviation from the exact procedure can result in spurious structure in the deconvoluted spectrum.     

Tunneling exponents sensitive to impurity scattering in quantum wires

We show that the scaling exponent for tunneling into a quantum wire in the "Coulomb Tonks gas" regime of impenetrable, but otherwise free, electrons is affected by impurity scattering in the wire. The exponent for tunneling into such a wire thus depends on the conductance through the wire. This striking effect originates from a many-body scattering resonance reminiscent of the Kondo effect. The predicted anomalous scaling is stable against weak perturbations of the ideal Tonks gas limit at sufficiently high energies, similar to the phenomenology of a quantum critical point.     

高功率微波沿面闪络击穿机制粒子模拟

针对高功率微波介质沿面闪络击穿物理过程,首先建立了理论模型,包括:动力学方程、粒子模拟算法、二次电子发射, 以及电子与气体分子蒙特卡罗碰撞模型、电子碰撞介质表面退吸附气体分子机制;其次,基于理论模型,编制了1D3V PIC-MCC程序,分别针对真空二次电子倍增、高气压体电离击穿和低气压面电离击穿过程,运用该程序仔细研究了电子和离子随时间演化关系、电子运动轨迹、电子及离子密度分布、空间电荷场时空分布、电子平均能量、碰撞电子平均能量、碰撞电子数目随时间演化关系、电子能量分布函数、平均二次电子发射率以及能量转换关系。研究结果表明:真空二次电子倍增引发的介质表面沉积功率只能达到入射微波功率1%左右的水平,不足以击穿;气体碰撞电离主导的高气压体电离击穿,是由低能电子（eV量级）数目指数增长到一定程度导致的,形成位置远离介质表面,形成时间为s量级;低气压下的介质沿面闪络击穿,是在二次电子倍增和气体碰撞电离共同作用下,由于数目持续增长的高能电子（keV量级）碰撞介质沿面导致沉积功率激增而引发的,形成位置贴近介质沿面,形成时间在ns量级。     

高功率微波沿面闪络击穿机制粒子模拟

针对高功率微波介质沿面闪络击穿物理过程,首先建立了理论模型,包括：动力学方程、粒子模拟算法、二次电子发射, 以及电子与气体分子蒙特卡罗碰撞模型、电子碰撞介质表面退吸附气体分子机制;其次,基于理论模型,编制了1D3V PIC-MCC程序,分别针对真空二次电子倍增、高气压体电离击穿和低气压面电离击穿过程,运用该程序仔细研究了电子和离子随时间演化关系、电子运动轨迹、电子及离子密度分布、空间电荷场时空分布、电子平均能量、碰撞电子平均能量、碰撞电子数目随时间演化关系、电子能量分布函数、平均二次电子发射率以及能量转换关系。研究结果表明：真空二次电子倍增引发的介质表面沉积功率只能达到入射微波功率1%左右的水平,不足以击穿;气体碰撞电离主导的高气压体电离击穿,是由低能电子（eV量级）数目指数增长到一定程度导致的,形成位置远离介质表面,形成时间为s量级;低气压下的介质沿面闪络击穿,是在二次电子倍增和气体碰撞电离共同作用下,由于数目持续增长的高能电子（keV量级）碰撞介质沿面导致沉积功率激增而引发的,形成位置贴近介质沿面,形成时间在ns量级。     

不同气压下介质表面高功率微波击穿的数值模拟

介绍了用于模拟介质表面高功率微波击穿的粒子模拟-蒙特卡罗碰撞方法,并采用该方法模拟研究了氩气环境不同气压下的介质表面高功率微波击穿过程,获得了该击穿过程中粒子数量和电子平均能量的时间变化图像,并得到了击穿延迟时间。数值模拟结果发现：在低气压下,次级电子倍增的作用比较明显,但电子数量在次级电子倍增饱和后的增速较低,击穿延迟时间较长;随着气压的升高,次级电子倍增的影响逐渐变小,气体电离逐渐占主导地位,击穿延迟时间逐渐变短;在高气压下,由于介质表面吸收沉积电子而呈负电性,次级电子倍增消失,击穿延迟时间由气体碰撞电离来决定。     

Mechanisms controlling the transition from glow silent discharge tostreamer discharge in nitrogen

Low-energy dielectric-barrier controlled discharges in nitrogen are studied by undertaking electrical measurements to determine mechanisms controlling the transition from glow to streamer-like discharge. The highest and the lowest values of the frequency and the amplitude of power supply voltage leading to a glow discharge have been found dependent on the gas flow and the nature of the surface in contact with the discharge. These boundary values have been related to the criteria necessary for initiating a Townsend breakdown rather than a streamer breakdown commonly observed under such conditions. This implies: (1) that the seed electron density just before the breakdown is high enough to allow the development of numerous small avalanches under a low field avoiding the formation of only one large avalanche mechanism at the origin of the streamer formation; and (2) to let the time for ions issued from the first avalanches to reach the cathode before the electrical field becomes large enough to induce the formation of large avalanches. Practically, the transition from a Townsend breakdown to a streamer breakdown is analyzed from electrical measurements data coupled to the visual aspect of the discharge. Without any gas flow, the obtaining of an atmospheric pressure glow discharge (APGD) is mainly limited by the species etched from the surface in contact with the gas. Indeed, these species can be quenchers of the nitrogen metastable molecules, which are the species at the origin of the formation of seed electrons via the Penning effect. This limitation can be overcome by the use of a laminar gas flow. However, this type of gas flow through the discharge induces a depletion of N₂ metastables and, consequently, influences the electron density at the entrance of the discharge, leading to a tendency on this part of the discharge to transit to a streamer-like one     

氮气火花开关击穿机制的理论和数值研究

三电极气体火花开关带有触发极,相比两电极开关,其开关导通的可控性较高,工作电压较低且抖动小,所以气体火花开关中三电极开关的应用较为广泛.本文针对大气压氮气环境下的两电极开关和三电极开关的击穿机制进行了理论与数值模拟研究.通过理论和数值计算发现,对于平板-平板的两电极开关来说,低电压下(小于6.3 kV)无法产生流注击穿,高电压下(大于6.3 kV)会先形成由阴极到阳极的负流注,然后再形成由阳极向阴极的正流注.而在三电极开关的击穿过程中,首先会在触发极和绝缘体之间发生击穿,然后这个通道不断向阴阳极扩展,最终形成阴阳极之间的电弧通道.在本文的计算工况下,如果需要阴极-触发极、阳极-触发极同时击穿的话,其阴极-触发极之间的外加电压需要大于1.18 kV,而阳极-触发极之间的外加电压需要大于3 kV.当考虑触发极的场致发射后,该击穿阈值可以显著降低.     

Coulomb correlations and electron-hole liquid in double quantum wells

It has been shown that many-body Coulomb correlations in double quantum wells with spatially separated electrons and holes result in the formation of a degenerate electron-hole liquid where an average distance between the particles is smaller than the size of an isolated exciton. This state turns out to be energetically more favorable than the exciton gas. The results have been obtained under the assumption that there are many different sorts of electrons and holes in the system, which is the case, in particular, in multivalley semiconductors. The relation to the experiments on the observation of luminescent regions in such systems is discussed.     

Investigation of the threshold intensity versus gas pressure in the breakdown of helium by 248 nm laser radiation

An investigation of the unexpectedly strong dependence of the threshold intensity on the gas pressure in the experimental study on the breakdown of He by short laser wavelength (Turcu et al., in Opt Commun, 134:66–68, 1997) is presented. A modified electron cascade model is applied (Evans and Gamal, in J Phys D Appl Phys, 13:1447–1458, 1980). Computations revealed reasonable agreement between the calculated thresholds and the measured ones. Moreover, the calculated electron energy distribution function and its parameters proved that multiphoton ionization of ground and excited atoms is the main source for the seed electrons, which contributes to the breakdown of helium. The effect of diffusion losses over pressures <1,000 Torr elucidated the origin of the strong dependence of the threshold intensity on the gas pressure. Collisional ionization dominates only at high pressures. No evidence for recombination losses is observed for pressures up to 3,000 Torr.